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Annual International Conference of the IEEE Engineering in Medicine and Biology Society

作者： Joohyun Seo Sabino J. Pietrangelo Hae-Seung Lee Charles G. Sodini the Microsystems Technology Laboratories Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA 02139 USA

ISBN: (纸本)9781424492695

This work presents a non-invasive arterial blood pressure (ABP) waveform monitoring technique using ultrasound. A portable ultrasound system to excite ultrasound transducers and acquire data is designed with off-the-shelf components. The insonation angles are identified using a vector Doppler technique based on the cosine dependency of the Doppler signals. The pulse pressure of an estimated waveform at the left common carotid artery is compared to the standard sphygmomanometer measurement in a clinical test. The estimated carotid ABP waveform shows excellent agreement to the finger ABP waveform with expected discrepancy of the systolic peak shape due to different measurement sites. The proposed method also tracks slow blood pressure fluctuations. This validation on human subjects shows potential for a noninvasive blood pressure waveform monitoring device at central arterial sites.

关键词： cosine dependency systolic peak shape a noninvasive blood Left Common Carotid Artery Pulse Pressure waveforms Blood Pressure ABP Doppler effect human subject blood pressure fluctuation Ultrasonic Waves Arterial Pressure

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Photonic analog-to-digital conversion scheme using an array of optical modulators

Photonic analog-to-digital conversion scheme using an array ...

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Optoelectronics Global Conference (OGC)

作者： Hayk Gevorgyan Anatol Khilo Department of Electrical Engineering and Computer Science Institute Center for Microsystems Masdar Institute of Science and Technology Abu Dhabi UAE

A novel scheme of an optically sampled, electronically quantized wavelength-demultiplexed analog-to-digital converter is proposed. The scheme is simple, energy efficient, tolerant to optical crosstalk, and fully suita... 详细信息

关键词： Modulation Optical crosstalk Photonics Optical resonators Optical pulses RF signals Silicon

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Fluxless Packaging of an Implantable Medical Device for Transcorneal Electrical Stimulation

Fluxless Packaging of an Implantable Medical Device for Tran...

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IEEE Electronics Packaging technology Conference

作者： Fuliang Le Jeffery C. C. Lo Xing Qiu S. W. Ricky Lee Xing Li Chi-Ying Tsui Wing-Hung Ki Department of Mechanical and Aerospace Engineering Center for Advanced Microsystems Packaging The Hong Kong University of Science and Technology Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology

ISBN: (纸本)9781467372701

Transcorneal electrical stimulation (TcES) is one of the potential therapies to prevent retinal degeneration. This study reports on an implantable medical device for TcES. The regular TcES components, such as stimulator chips, metal wires, electrodes and printed circuit boards (PCBs), are all packaged into the device. The device has a thin-film shape and is soft enough to bend, thus it is placed beneath the cornea without exposure to the outside. The stimulator chip, with the function of generating precise stimulation current to prevent retinal degeneration, is flip bonded onto a flexible PCB using gold studs and thermosonic bonding process. Thermosonic bonding eliminates the use of flux, which is not biocompatible with in-vivo implants. The surfaces of the gold stud bumps are in general non-uniform. Coining is an essential pretreatment of compressing the gold stud bumps against a flat solid surface to obtain much smoother & larger surfaces. This pretreatment helps form high-strength joints between the gold stud bumps and the PCB pads. In the packaging process, underfill is applied in the gaps between the chips and the flexible PCB to enhance the reliability of the gold joints. A compression molding step is subsequently conducted to cover all internal components with a silicone material. The two electrodes, which are made of gold studs, can be exposed by grinding. A coining step is followed to ensure the flatness of the two electrodes.

关键词： Gold Electrodes Electrical stimulation Bonding Retina Wires Surface treatment

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MOS Memory with Double-Layer High-κTunnel Oxide Al_2O_3/HfO_2 and ZnO Charge Trapping Layer

MOS Memory with Double-Layer High-κTunnel Oxide Al_2O_3/HfO...

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IEEE International Conference on Nanotechnology

作者： Nazek El-Atab Ammar Nayfeh Berk Berkan Turgut Ali K. Okyay Institute Center for Microsystems - iMicro Department of Electrical Engineering and Computer Science (EECS) Masdar Institute of Science and Technology Abu Dhabi United Arab Emirates UNAM-Institute of Materials Science and Nanotechnology

ISBN: (纸本)9781467381574

In this work, the effect of using a double layer of high-κ tunnel oxides Al_2O_3/HfO_2 instead of a single layer Al_2O_3, in MOS memory with ZnO charge trapping layer is studied. A memory effect due to charging in the ZnO layer is observed using high frequency C-V measurements. The shift of the threshold voltage (V_t) obtained from the hysteresis measurements at 10/-10 V program/erase voltage is around 3.3 V with single layer tunnel oxide while 7 V with the double layer tunnel oxide with same total oxide thickness. In addition, the memory structures show long retention times (>10 years) which make them promising for applications in non-volatile memory devices. Moreover, the results highlight that tunnel band engineering can be used to further reduce the operating voltage and equivalent oxide thickness of future memory devices without sacrificing the memory performance.

关键词： Charge trapping memory ZnO Al_2O_3 HfO_2 atomic layer deposition MOS retention time

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Abstracts and Workshops 7th National Spinal Cord Injury Conference November 9-11, 2017 Fallsview Casino Resort Niagara Falls, Ontario, Canada Abstracts

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JOURNAL OF SPINAL CORD MEDICINE 2017年第6期40卷 813-869页

作者： [Anonymous] a NET Team Toronto Rehabilitation Institute - University Health Network Toronto ON Canada. fo Neural Engineering and Therapeutic Team Lyndhurst Centre Toronto Rehabilitation Institute - University Health Network Toronto ON Canada. c Rick Hansen Institute Vancouver BC Canada. ev Rick Hansen Institute Vancouver BC Canada. fc Stan Cassidy Hospital University of New Brunswick Fredericton NB Canada. fd Dalhousie University Halifax NS Canada. e University of Saskatchewan Saskatoon SK Canada. aa University of Calgary Calgary AB Canada. y Dalhousie University Halifax NS Canada. fa Health Sciences Centre Winnipeg MB Canada. fb University of Manitoba Winnipeg MB Canada. h University of Alberta Edmonton AB Canada. i Universite Laval Quebe c City QC Canada. bd Rick Hansen Institute Vancouver BC Canada. fz Clinician Investigator Lyndhurst Centre Toronto Rehabilitation Institute University Health Network and Assistant Professor Department of Medicine Division of Physical Medicine and Rehabilitation University of Toronto. v University of Toront o Toronto ON Canada. n Institute of Biomaterials and Biomedical Engineering University of Toronto Toronto ON Canada. o Toronto Rehabilitation Institute - University Health Network Toronto ON Canada. ga Clinical Scientist Lyndhurst Centre Toronto Rehabilitation Institute University Health Network and Assistant Professor Department of Physical Therapy University of Toronto. dx Department of Electrical and Computer Engineering University of Toronto Toronto ON Canada. fm Lawson Health Research Institute London ON Canada. r Parkwood Institute London ON Canada. bi Parkwood Institute London ON Canada. s University of British Columbia Vancouver BC Canada. t Simon Fraser University Burnaby BC Canada. u DeltaQuest Foundation Concord MA USA. z Institut national d'excellence en santé et en services sociaux (INESSS) Quebec City QC Ca

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Theoretical Efficiency Limits of a 2 Terminal Dual Junction Step Cell

Theoretical Efficiency Limits of a 2 Terminal Dual Junction ...

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IEEE Photovoltaic Specialist Conference

作者： Sabina Abdul Hadi Tim Milakovich Mayank Bulsara Evelina Polyzoeva Eugene A. Fitzgerald Judy L. Hoyt Ammar Nayfeh Institute Center for Future Energy Systems (iFES) Department of Electrical Engineering and Computer Science (EECS) Masdar Institute of Science and Technology P.O. Box 54224 Abu Dhabi UAE MIT Microsystems Technology Laboratories Cambridge MA 02139 USA

ISBN: (纸本)9781479979455

In this paper we present theoretical analysis for upper efficiency limit of a novel 2 terminal dual junction step-cell. Results show that step cell design relaxes bandgap requirements for efficient tandem cell. While conventional tandem cell with optimized bandgap combination (1.64/ 0.96 eV) has the highest efficiency (45.78 %), the step-cell design provides significant efficiency improvement for cells with non-optimized bandgap values. Efficiency upper limit for Si based step-cell with top cell bandgap equal to 1.41 eV (~GaAs), efficiency upper limit increases from~21% in conventional tandem cell to 38.7% for optimized step-cell design. Step-cell design provides opportunity for wider selection of materials used in tandem solar cell applications.

关键词： Multijunction solar cells theoretical efficiency limit detailed balance method step-cell silicon

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Elementary framework for cold field emission: Extension to non-planar emitter tip geometries

Elementary framework for cold field emission: Extension to n...

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International Conference on Vacuum Nanoelectronics (IVNC)

作者： Alex Andrew Patterson Akintunde Ibitayo Akinwande Department of Electrical Engineering and Computer Science Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge Massachusetts

The elementary framework for cold field emission is updated to treat emission from non-planar emitting surfaces of quantum-confined field electron emitters. The framework is applied to emission from the curved surface of a cylindrical nanowire, which results in an oscillatory emitted current density (ECD) that approaches the Fowler-Nordheim (FN) ECD in the limit of large emitter radius. As a function of the emitter dimensions, the ECD from the cylindrical nanowire has higher, narrower peaks than planar emitters, and secondary oscillations, from the irregular distribution of energy levels.

关键词： Surface waves Geometry Mathematical model Equations Current density Wave functions Vectors

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Novel GaAs0.71P0.29/Si tandem step-cell design

Novel GaAs0.71P0.29/Si tandem step-cell design

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2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

作者： Sabina Abdul Hadi Evelina Polyzoeva Tim Milakovich Mayank Bulsara Judy L. Hoyt Eugene A. Fitzgerald Ammar Nayfeh Department of Electrical Engineering and Computer Science (EECS) Masdar Institute of Science and Technology Abu Dhabi UAE MIT Microsystems Technology Laboratories Cambridge MA USA

ISBN: (纸本)9781479943975

A novel GaAs 0.71 P 0.29 /Si tandem cell is proposed and simulated. In order to grow GaAs 0.71 P 0.29 layers on Si, Si 1-y Ge y (SiGe) buffer layers can be used but optical losses are expected. To reduce large optical losses a wafer bonded/layer transferred structure can be used that eliminates the SiGe buffer layer. In this work we propose a novel tandem step-cell design that partially exposes the underlying Si cell for both wafer bonded and SiGe based cells. We demonstrate by experiment and simulation mitigation of the optical losses associated with SiGe buffer layers. For an optimized GaAs 0.71 P 0.29 /Si tandem cell without the step cell design, simulations estimate ~20% efficiency for the bonded structure and ~3% for the as grown structure with a SiGe buffer. With the proposed novel step-cell design, optimum efficiency of bonded structure increases to ~32% while for structures with SiGe the simulated efficiency reaches ~23%. Optimum exposure of bottom cell area increases with increasing thickness and lifetime of layers above the bottom Si cell.

关键词： Silicon Silicon germanium Optical buffering Buffer layers Photovoltaic cells Optical losses Gallium arsenide

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~23% Increase in Efficiency of 100 nm Thin Film a-Si Solar Cells Using Combination of Si/InN and Au Nanoparticles

~23% Increase in Efficiency of 100 nm Thin Film a-Si Solar C...

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IEEE Photovoltaic Specialist Conference

作者： Farsad Imtiaz Chowdhury Aaesha Alnuaimi Sabri Alkis Ali K. Okyay Munir Nayfeh Ammar Nayfeh Institute Center for Microsystems (iMicro) Department of Electrical Engineering and Computer Science (EECS) Masdar Institute of Science and Technology P.O. Box 54224 Abu Dhabi UAE UNAM - National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology Bilkent University 06800 Ankara Turkey Department of Physics University of Illinois at Urbana-Champaign 1110 W. Green Street Urbana Illinois 61801

ISBN: (纸本)9781479979455

In this work we report 23% increase in efficiency of n-i-p a-Si:H cells using Si, InN and Au nanoparticles. These cells shows an average improvement of 24.54% in short circuit current. The coated cells also reduce the reflection by 2.7% compared to reference cell between 300-800 nm, which indicates light is getting scattered by these nanoparticles. EQE and IQE analysis show that the overall enhancement can be attributed to photon energy downshifting with a reduction in reflectivity.

关键词： nanoparticles solar cells spin coating scattering downshifting

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Pitch scaling of ultrafast, optically-triggered silicon field emitter arrays

Pitch scaling of ultrafast, optically-triggered silicon fiel...

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International Conference on Vacuum Nanoelectronics (IVNC)

作者： Michael E. Swanwick Chen D. Dong Philip D. Keathley Arya Fallahi Franz X. Kärtner Luis Fernando Velasquez-García Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA DESY University of Hamburg Hamburg Germany

Ultrafast, optically-triggered field emitter arrays are an exciting new area of research with potential application in ultrafast imaging and in coherent x-ray sources based on inverse Compton scattering. The fabrication and preliminary experimental results of pitch scaling on emitter arrays using n-type silicon wafers and scalable CMOS processing is studied to better understand the effect of tip to tip field interaction, space charge and fabrication limitations.

关键词： Silicon Cathodes Space charge Stimulated emission Optical device fabrication Optical imaging Optical scattering

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