Ergonomically unsuited backpacks tend to cause spine and bone structure based dysfunctionalities, especially on an average high school student's fast developing skeleton. Carrying heavy backpacks by school student...
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ISBN:
(纸本)9780983762461
Ergonomically unsuited backpacks tend to cause spine and bone structure based dysfunctionalities, especially on an average high school student's fast developing skeleton. Carrying heavy backpacks by school students should be avoided to prevent musculoskeletal disorders. In this paper, we study the ergonomic risks among high school students in a local school district. The research includes literature review, survey design, data collection, data analysis, digital human modeling (DHM), and recommendations. The survey includes 21 different questions under three categories: human physical characteristics, health history, and school and backpack information. DHM simulations are created to assess the impact of the different factors such as backpack weight, carrying position, and human physical characteristics. The results provide recommendations for avoiding ergonomic risks caused by carrying backpacks among high school students.
A reduced surface electric field in an AlGaN/GaN high electron mobility transistor （HEMT） is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas （2-DEG） channel as an electr...
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A reduced surface electric field in an AlGaN/GaN high electron mobility transistor （HEMT） is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas （2-DEG） channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional sourceconnected field plates and double field plates, the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, Lm, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with VGS = -5 V, Lm 1.5 m, a peak Mg doping concentration of 8×10^17 cm-3 and a drift region length of 10 m, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.
Mostly in the agriculture sector, identifying rotten fruits has been critical. The classification of fresh and rotting fruits is typically carried out by humans, which is ineffective for fruit growers. Humans wear out...
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In recent years, due to the fast development of digital images, a rapid growth of research interest in the forgery detection in digital images has been happened. One of the most common techniques in creating forged im...
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We show that Optical Burst Switching (OBS) does not appear to be a viable option for routing in the core network. In order to achieve an acceptably low blocking probability, OBS networks will require an uneconomically...
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Providing Internet access above-the-clouds has made the development of aircraft networks more important than ever. However, new and emerging Internet applications have increased the challenge of providing seamless and...
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The extensive use of computers and networks for exchange of information has also had ramifications on the growth and spread of crime through their use. Law enforcement agencies need to keep up with the emerging trends...
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Wireless sensor networks are deployed for the purpose of sensing and monitoring an area of interest. Sensors in the sensor network can suffer from both random and systematic bias problems. Even when the sensors are pr...
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ISBN:
(纸本)9783000248832
Wireless sensor networks are deployed for the purpose of sensing and monitoring an area of interest. Sensors in the sensor network can suffer from both random and systematic bias problems. Even when the sensors are properly calibrated at the time of their deployment, they develop drift in their readings leading to erroneous inferences being made by the network. The drift in this context is defined as a slow, unidirectional, long-term change in the sensor measurements. In this paper we present a novel algorithm for detecting and correcting sensors drifts by utilising the spatio-temporal correlation between neigbouring sensors. Based on the assumption that neighbouring sensors have correlated measurements and that the instantiation of drift in a sensor is uncorrelated with other sensors, each sensor runs a support vector regression algorithm on its neigbours' corrected readings to obtain a predicted value for its measurements. It then uses this predicted data to self-assess its measurement and detect and correct its drift using a Kalman filter. The algorithm is run recursively and is totally decentralized. We demonstrate using real data obtained from the Intel Berkeley Laboratory that our algorithm successfully suppresses drifts developed in sensors and thereby prolongs the effective lifetime of the network.
An incremental-attribute based particle swarm optimization (IAPSO) which utilizes incremental learning strategy in function optimization is presented in this paper. Traditionally, particle swarm optimization (PSO) sea...
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Named Entity Recognition (NER) is one of the crucial and vital subtasks that must be solved in most Natural Language Processing (NLP) tasks. However, constructing a NER system for the Sinhala Language is challenging. ...
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