Due to advancements in lighting technologies new opportunities for application emerge. In this paper an interdisciplinary study towards the development of adaptive lighting environments is presented. An implementation...
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Due to advancements in lighting technologies new opportunities for application emerge. In this paper an interdisciplinary study towards the development of adaptive lighting environments is presented. An implementation of an adaptive lighting environment is made in the domain of office work. For evaluation, experts from the domains of human-system interaction, activity and context recognition, and system architecture design are interviewed. Contributions are made with regard to the implementation of the adaptive lighting in office environments and an evaluation method that is in line with the interdisciplinary approach. From the evaluation method insights in the fields of human-computer interaction, activity and context recognition and system architecture and (wireless) networking and in topics that span across these fields are gained.
We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a m...
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ISBN:
(纸本)9781424483938
We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multilevel multi-electron (MLME) system. We show how this MLMEFDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.
We consider the joint optimization of beamformers and linear receivers in a MIMO interference network. Each transmitter transmits a single beam corresponding to a rankone precoder. When the number of users K is greate...
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Vertical optical mode-size transformation from 260nm-thick Si-nanowaveguide to 10-12μm matching the single-mode-fibre-core has been demonstrated using compact multilayer Si/SiO2 asymmetric GRIN lens (length :∼24μm)...
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In this paper, we propose and analyze a framework of combining the global and local models for improving the activity recognition performance. Under the framework, several global-local-model combination methods are pr...
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We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a m...
详细信息
We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multi-level multi-electron (MLME) system. We show how this MLME-FDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.
Vertical optical mode-size transformation from 260nm-thick Si-nanowaveguide to 10~12μm matching the single-mode-fibre-core has been demonstrated using compact multilayer Si/SiO 2 asymmetric GRIN lens (length:~24μm)...
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ISBN:
(纸本)9781557528896
Vertical optical mode-size transformation from 260nm-thick Si-nanowaveguide to 10~12μm matching the single-mode-fibre-core has been demonstrated using compact multilayer Si/SiO 2 asymmetric GRIN lens (length:~24μm). GRIN lens to single-mode-fibre practical coupling loss of -3.45 dB was achieved.
We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-leve...
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ISBN:
(纸本)9781557528896
We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-level multi-electron FDTD model.
We report the first demonstration of phase change memory cells utilizing nickel monosilicide (NiSi) or platinum monosilicide (PtSi) as the bottom electrode or heater material. This work enables the integration of PCRA...
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We report the first demonstration of phase change memory cells utilizing nickel monosilicide (NiSi) or platinum monosilicide (PtSi) as the bottom electrode or heater material. This work enables the integration of PCRAM directly on the silicided drain regions of MOSFETs, allowing compact integration with reduced process complexity and cost. Low reset current of 0.8 mA was achieved for contact dimensions of ~ 1 μm. electrical and simulation results demonstrate the feasibility of employing silicides as a bottom electrode/heater in a PCRAM.
In this work, a highly compressive DLC liner (~ 6 GPa) was applied on AlGaN/GaN MOS-HEMTs for the first time. The compressive stress induced by DLC liner effectively reduces the tensile stress in the AlGaN layer, thus...
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In this work, a highly compressive DLC liner (~ 6 GPa) was applied on AlGaN/GaN MOS-HEMTs for the first time. The compressive stress induced by DLC liner effectively reduces the tensile stress in the AlGaN layer, thus reducing the 2-DEG density. Devices with DLC show 22 % and 19% increase in drive current and peak transconductance, respectively, at V G = 2 V and V D = 10 V. Threshold voltage reduction of ~ 1 V was also observed for devices with DLC liner, as compared to ones without DLC liner. Devices in this work were also integrated with in situ silane (SiH 4 ) passivation technology.
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