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TechRxiv 2024年

作者： Kim, Jinwoo Seo, Minjae Lee, Seungsoo Nam, Jaehyun Yegneswaran, Vinod Porras, Phillip Gu, Guofei Shin, Seungwon The School of Software Kwangwoon University Seoul01897 Korea Republic of The Graduate School of Information Security KAIST Daejeon34141 Korea Republic of The Department of Computer Science and Engineering Incheon National University Incheon22012 Korea Republic of The Department of Computer Engineering Dankook University Gyeonggi-do Yongin16890 Korea Republic of SRI International Menlo ParkCA94025 United States Texas A&M University College StationTX77843 United States The School of Electrical Engineering KAIST Daejeon34141 Korea Republic of

Over the last 15 years, Software-Defined Networking (SDN) has gained widespread support from both research communities and the industry owing to its open nature and programmability. This paradigm empowers stakeholders, including researchers, practitioners, and developers, to craft innovative networking services using robust APIs and a global network view, free from reliance on vendor-dependent control planes. However, the flexible architecture of SDN has introduced a plethora of security challenges absent in traditional network environments. While many surveys have presented existing attacks, there has been a lack of systematization of attacks from a penetration perspective, which is crucial for understanding attacks and their root causes. This paper aims to analyze previous literature that has disclosed attack cases in SDN, scrutinizing their vulnerabilities, penetration routes, and root causes. Additionally, we provide an in-depth and comprehensive discussion of the underlying problems associated with these attacks and present defenses proposed by researchers to mitigate them, analyzing how the root causes are remedied. Through this study, we aim to illuminate existing security issues within the current SDN architecture, prompting a reevaluation of various security problems and providing a future research guideline for SDN security. © 2024, CC BY.

关键词： Network intrusion

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engineering Andreev Bound States for Thermal Sensing in Proximity Josephson Junctions

arXiv

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arXiv 2025年

作者： Jung, Woochan Arnault, Ethan G. Huang, Bevin Park, Jinho Jang, Seong Watanabe, Kenji Taniguchi, Takashi Englund, Dirk Fong, Kin Chung Lee, Gil-Ho Physics Department Pohang University of Science and Technology Pohang37673 Korea Republic of Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA02139 United States Intelligence Community Postdoctoral Research Fellowship Program Massachusetts Institute of Technology CambridgeMA02139 United States Department of Mechanical Engineering Columbia University New YorkNY10027 United States Research Center for Functional Materials National Institute for Materials Science Tsukuba Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba Japan Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Department of Electrical and Computer Engineering Northeastern University BostonMA02115 United States Department of Physics Northeastern University BostonMA02115 United States Quantum Materials and Sensing Institute BurlingtonMA01803 United States

The thermal response of proximity Josephson junctions (JJs) is governed by the temperature (T)- dependent occupation of Andreev bound states (ABS), making them promising candidates for sensitive thermal detection. In this study, we systematically engineer ABS to enhance the thermal sensitivity of critical current (lc) of proximity JJs, quantified as |dlc/dT/| for threshold readout scheme and |dlc/***−1| for inductive readout scheme. Using a gate-tunable graphene-based JJ platform, we explore the impact of key parameters—including channel length, transparency, carrier density, and superconducting material—on the thermal response. Our results reveal that the proximity-induced superconducting gap plays a crucial role in optimizing thermal sensitivity. Notably, we see a maximum |dlc/***−1| value of 0.6 K−1 at low temperatures with titanium-based graphene JJs. By demonstrating a systematic approach to engineering ABS in proximity JJs, this work establishes a versatile framework for optimizing thermal sensors and advancing the study of ABS-mediated transport. © 2025, CC BY.

关键词： Superconducting materials

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Classic Fluorophores With a Horizontal Alignment for Enhancing Light Outcoupling Efficiency (≈30%) and External Quantum Efficiency (≈7%) of Near Ultraviolet (λmax < 400 nm) Organic Light-Emitting Diodes

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Advanced Optical Materials 2023年第8期11卷

作者： Lee, Jian Haur Huang, Jing-Xiang Chen, Chia-Hsun Lee, Yi-Ting Chan, Chin-Yiu Dzeng, Yi-Chung Tang, Po-Wen Chen, Chi Adachi, Chihaya Chiu, Tien-Lung Lee, Jiun-Haw Chen, Chin-Ti Sustainable Chemical Science and Technology Taiwan International Graduate Program and Institute of Chemistry Academia Sinica Taipei11529 Taiwan Department of Applied Chemistry National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Electrical Engineering Graduate Institute of Photonics and Optoelectronics National Taiwan University Taipei10617 Taiwan Kyushu University Fukuoka819-0395 Japan Research Center for Applied Sciences Academia Sinica Taipei11529 Taiwan Department of Electrical Engineering Yuan Ze University Taoyuan32003 Taiwan

Based on the classic 1,1′:4′,1″-terphenyl fluorophore, a novel near-ultraviolet (NUV) fluorescent BB4Ph (4,4″′-bis(2,3,4,5-tetraphenylphen-1-yl)(1,1′:4′,1″-terphenyl) is designed, synthesized, and characterized. BB4Ph exhibits a NUV fluorescence with a λmax of 373 and 380 nm in solution and as a thin film, respectively. The grazing incidence wide-angle X-ray scattering (GIWAXS) reveals BB4Ph having a high value of order parameter (SGIWAXS) of 0.59 for a molecular layer array normal to the substrate;the angle-dependent photoluminescence (ADPL) measurement shows Θ (horizontal–dipole ratios) as high as 95% with the neat film. The non-doped BB4Ph organic light-emitting diodes (OLEDs) show external quantum efficiency (EQE) up to 5.24% with 1931 Commission internationale de l’ Eclairage coordinates (CIEx,y) of (0.16, 0.04), a NUV electroluminescence. With 4P-Cz (9,9′-(1,1′:4′,1″:4″,1′″-quaterphenyl-4,4′″-diyl)dicarbazole) as a dopant emitter, doped BB4Ph OLEDs show the highest EQE of 6.99% and a NUV 1931 CIEx,y (0.16, 0.04). The photoluminescence quantum yield is measured for the thin film of BB4Ph and 4P-Cz:BB4Ph as 68% and 96%, respectively. Hence, the low limits of light outcoupling efficiency (ηout) of the two individual OLEDs are estimated as 31% and 29%, respectively. © 2023 Wiley-VCH GmbH.

关键词： Thin films

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Giant long-range dipole-dipole interactions in a plasmonic lattice

Giant long-range dipole-dipole interactions in a plasmonic l...

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Frontiers in Optics + Laser science 2021, FiO+LS 2021 - Part of Frontiers in Optics, FiO 2021

作者： Boddeti, Ashwin K. Guan, Jun Sentz, Tyler Juarez, Xitali Newman, Ward Cortes, Cristian Odom, Teri W. Jacob, Zubin School of Electrical and Computer Engineering Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Graduate Program in Applied Physics Northwestern University EvanstonIL60208 United States Department of Materials Science and Engineering Northwestern University EvanstonIL60208 United States Intel Corporation BeavertonOR97007 United States Center for Nanoscale Materials Argonne National Laboratory LemontIL60439 United States Graduate Program in Applied Physics Department of Materials Science and Engineering Department of Chemistry Northwestern University EvanstonIL60208 United States

We observe long-range dipole-dipole interactions in a plasmonic lattice. Fluorescence lifetime measurements show density-dependent non-exponential decay dynamics over 800nm mean nearest-neighbour separation distances ... 详细信息

ISBN: (纸本)9781557528209

关键词： Plasmonics

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Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

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ECS Journal of Solid State science and Technology 2023年第3期12卷 035001-035001页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Chen, Ke-Horng Hsu, Heng-Tung Hsu, Chin-Tsai Godwin Raj, D. Chou, Hung-Ting Wu, Jui-Sheng Yu, Tien-Han Godfrey, D. Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan National Applied Research Laboratories Hsinchu Taiwan Dept of ECE Amal Jyothi College of Engineering Kerala India National Chung Shan Institute of Science and Technology Taoyuan Taiwan Deparment of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Dept of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India

Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top lengths (Ltop). An HCI stress time of 6000 s was conducted on these devices, while V t stability in other stress time domains, leakage current, and transconductance degradation are also discussed. In this work, we have demonstrated that increasing the LTop length could avoid the virtual gate effect and disperse the influence of the electric field under HCI stress. Furthermore, the effects of trapping in various locations, such as in the bulk SiN or AlGaN/GaN interface has been discussed. These trapping effects caused by the HCI stress might be the source of the Vth shift. Overall, The large Y-gate HEMT showed the lowest degradation of DC characteristics after the long HCI stress test. © 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

关键词： High electron mobility transistors

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Explainable machine learning models for estimating daily dissolved oxygen concentration of the Tualatin River

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engineering Applications of Computational Fluid Mechanics 2024年第1期18卷

作者： Li, Shuguang Qasem, Sultan Noman Band, Shahab S. Ameri, Rasoul Pai, Hao-Ting Mehdizadeh, Saeid School of Computer Science and Technology Shandong Technology and Business University Yantai China Computer Science Department College of Computer and Information Sciences Imam Mohammad Ibn Saud Islamic University (IMSIU) Riyadh Saudi Arabia Computer Science Department Faculty of Applied Science Taiz University Taiz Yemen Future Technology Research Center National Yunlin University of Science and Technology Douliu Taiwan Department of Information Management International Graduate School of Artificial Intelligence National Yunlin University of Science and Technology Douliu Taiwan Department of Information Management National Yunlin University of Science and Technology Douliu Taiwan Bachelor Program of Big Data Applications in Business National Pingtung University Pingtung Taiwan Water Engineering Department Urmia University Urmia Iran

Monitoring the quality of river water is of fundamental importance and needs to be taken into consideration when it comes to the research into the hydrological field. In this context, the concentration of the dissolved oxygen (DO) is one of the most significant indicators of the quality of river water. The current study aimed to estimate the minimum, maximum, and mean DO concentrations (DO min, DO max, DO mean) at a gauging station located on Tualatin River, United States. To that end, four machine learning models, such as support vector regression (SVR), multi-layer perceptron (MLP), random forest (RF), and gradient boosting (GB) were established. Root mean square error (RMSE), mean absolute error (MAE), coefficient of correlation (R), and Nash-Sutcliffe efficiency (NSE) metrics were employed to better assess the accuracies of these models. The modeling results demonstrated that the SVR and MLP surpassed the RF and GB models. Despite this, the SVR was concluded to be the best-performing method when used to estimate the DO min, DO max, and DO mean. The best error statistics in the testing phase were related to the SVR model with full (four) inputs to estimate DO mean concentration (RMSE = 0.663 mg/l, MAE = 0.508 mg/l, R = 0.945, NSE = 0.875). Finally, the explainability of the superior models (i.e. SVR models) was conducted using SHapley Additive exPlanations (SHAP) for the first time to estimate DO concentration. In fact, evaluating the explainability of machine learning models can provide useful information about the impact of each of the input estimators used in the procedure of models development. It was concluded that the specific conductance (SC) and followed by water temperature (WT) could provide the most contributions for estimating the DO min, DO max, and DO mean concentrations. © 2024 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.

关键词： dissolved oxygen concentration estimation Explainable machine learning SHapley additive explanations

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Deep Learning with Greedy Layer-Wise Compound Scaling for Temperature and Humidity Prediction in Solar Dryer Dome

SSRN

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SSRN 2022年

作者： Cenggoro, Tjeng Wawan Elwirehardja, Gregorius Natanael Dominic, Nicholas Setiawan, Karli Eka Rahutomo, Reza Djuana, Endang Gunawan, Fergyanto E. Budiman, Arief S. Romeli, Sugiarto Pardamean, Bens Computer Science Department School of Computer Science Bina Nusantara University Jakarta11480 Indonesia Bioinformatics and Data Science Research Center Bina Nusantara University Jakarta11480 Indonesia Computer Science Department BINUS Graduate Program Master of Computer Science Program Bina Nusantara University Jakarta11480 Indonesia Information Systems Department School of Information Systems Bina Nusantara University Jakarta11480 Indonesia Electrical Engineering Department Faculty of Industrial Technology Universitas Trisakti Jakarta11440 Indonesia Industrial Engineering Department BINUS Graduate Program Master of Industrial Engineering Bina Nusantara University Jakarta11480 Indonesia Department of Manufacturing and Mechanical Engineering and Technology Oregon Institute of Technology Klamath FallsOR97601 United States PT. Impack Pratama Industri Jakarta Indonesia

Drying has been an eco-friendly and cost-efficient method to reduce post-harvest losses of agricultural crops. In various countries, the technique has been widely utilized in the form of Solar Dryer Dome (SDD) buildings. Accurate indoor microclimate forecasting is very important to implement smart control systems in SDDs that can maintain the ideal conditions, as the availability of solar energy is limited only at daytimes and the temperature may drop significantly during nighttimes in remote areas. The microclimate variables that play an important role in maintaining ideal environmental conditions include temperature and relative humidity. © 2022, The Authors. All rights reserved.

关键词： Forecasting

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Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks

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ECS Journal of Solid State science and Technology 2023年第3期12卷 035007-035007页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lin, Wen-Chin Yu, Tien-Han Chou, Hung-Ting Godwin Raj, D. Godfrey, D. International College of Semiconductor Technology National Yang Ming Chiao Tung University Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Taiwan National Applied Research Laboratories Taiwan Institute of Microelectronics National Cheng Kung University Taiwan National Chung-Shan Institute of Science and Technology Taoyuan Taiwan Dept of ECE Amal Jyothi College of Engineering Kerala India Dept of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India

Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt base and low Vt base gate stacks with different work functions. It is evident that: (i) The standard Vt device sustains lower effective stress bias due to the difference in threshold voltage, resulting in a more stable threshold voltage than the low Vt base device, and (ii) the transconductance of the single N- and P-type FinFET is more severely degraded than the multi-fin N- and P-type FinFET, mainly because multi N- and P-type Finfet has coupe effect, which effectively reduces the impact of HCI. © 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited

关键词： FinFET

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Reduction of interface defects in gate-recessed GaN HEMTs by neutral beam etching

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Materials Today Advances 2024年 23卷

作者： Yu, Chia Hao Chiang, Wei Hsiang Chen, Yi-Ho Samukawa, Seiji Wuu, Dong Sing Chung, Chin-Han Hsiao, Ching-Lien Horng, Ray Hua Institute of Electronics National Yang Ming Chiao Tung University Department of Materials Science and Engineering National Chung Hsing University Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Institute of Comunications Engineering National Yang Ming Chiao Tung University Department of Applied Materials and Optoelectronic Engineering National Chi Nan University International College of Semiconductor Technology National Yang Ming Chiao Tung University Thin Film Physics Division Department of Physics Chemistry and Biology (IFM) Linköping University

This study investigates and compares the impact of different etching techniques on the fabrication of GaN high electron mobility transistors (HEMTs) between the inductively coupled plasma reactive ion etching (ICP-RIE) and the neutral beam etching (NBE) for the gate recess. By conducting direct current analysis, it was found that devices manufactured using the NBE exhibited superior electrical performance as compared with those produced using the ICP-RIE. These enhanced electrical characteristics include a transconductance of up to 100.4 mS/mm, a threshold voltage (V_th) of −2.3 V, an on/off current ratio of 1.1 × 10⁹, a subthreshold swing (S.S.) of 99.63 mV/dec, and a remarkably low gate leakage current. Additionally, we noted varying degrees of hysteresis in the I–V characteristics were related to process disparities possibly leading to interface defects. Multi-frequency capacitance-voltage (C–V) measurements were used to identify the interface defects at the oxide/AlGaN interface of the gate. The results revealed that devices fabricated using the NBE exhibited a lower interface defect density as compared with those fabricated using the ICP-RIE, thereby elucidating the reduced hysteresis observed in the I–V characteristics. These findings indicated the significant advantages of the NBE process in the fabrication of GaN HEMTs. © 2024 The Authors

关键词： GaN HEMTs Gate recess Interface defects Multi-frequency C–V Neutral beam etching

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A weighted multivariate fuzzy time series method for multiple output high-dimensional time series forecasting in IoT applications

A weighted multivariate fuzzy time series method for multipl...

引用

Latin America Congress on Computational Intelligence (LA-CCI)

作者： Hugo Vinicius Bitencourt Patrícia de Oliveira Lucas Omid Orang Petrônio Silva Frederico Gadelha Guimarães Graduate Program in Electrical Engineering Universidade Federal de Minas Gerais Belo Horizonte MG Brazil Instituto Federal do Norte de Minas Gerais Salinas MG Brazil Department of Computer Science Universidade Federal de Minas Gerais Belo Horizonte MG Brazil Instituto Federal do Norte de Minas Gerais Januária MG Brazil

ISBN: (数字)9798350374575

ISBN: (纸本)9798350374582

In Internet of Things (IoT) applications, data flows are continuous streams of high-dimensional time series that aggregate various data sources. In this context, decision-making processes frequently encompass multiple factors and criteria that demand forecasting these time series. This paper introduces MO-WMVFTS, a novel multiple-input multiple-output (MIMO) fuzzy time series (FTS) method for tackling this complex scenario. MO-WMVFTS is a hybrid forecasting method that fuses weighted multivariate FTS (WMVFTS) with embedding transformations, designed for IoT applications. To assess the performance of the proposed method, it was applied to the prediction of energy consumption in smart homes and air quality in smart cities. Here, three real-world datasets are used to assess the validity of our proposed approach, and the results obtained are highly competitive when compared to other existing methods.

关键词： Smart buildings Smart cities Soft sensors Time series analysis Smart homes Predictive models Internet of Things Forecasting Streams MIMO communication

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