检索结果-内蒙古大学图书馆

AIAA science and technology Forum and Exposition, AIAA SciTech Forum 2025

作者： Collins, Noelle M. Klesko, Joseph P. Brener, Igal Norden, Tenzin McClintock, Luke M. Padmanabhan, Prashant Feezell, Daniel Winters, Caroline A. Materials Science Non-destructive Evaluation and Development Sandia National Laboratories AlbuquerqueNM United States Materials Science Thin Films and Packaging Sandia National Laboratories AlbuquerqueNM United States Optical Engineering Microsystems Engineering Science and Applications Sandia National Laboratories AlbuquerqueNM United States Center for Integrated Nanotechnologies Los Alamos National Laboratory Los AlamosNM United States Department of Electrical and Computer Engineering University of New Mexico AlbuquerqueNM United States Sandia National Laboratories AlbuquerqueNM United States

ISBN: (纸本)9781624107238

Ultrafast (GHz) thermometry requires considerations of signal-to-noise, heat conduction, and temperature sensitivity. Ultrafast Photoluminescent Surface Heating Optical Thermometry (UP-SHOT) exploits the subnanosecond excitonic response of zinc oxide. Time-resolved photoluminescence is presented and discussed. © 2025, American Institute of Aeronautics and Astronautics Inc, AIAA. All rights reserved.

关键词： Heat conduction

来源：评论

学校读者我要写书评

暂无评论

GaN Schottky-Gate p-Field Effect Transistors Based on GaN-on-Si Platform Operational at High Temperatures

引用

Physica Status Solidi (A) Applications and Materials science 2025年第0期

作者： Luo, Shisong Chang, Cheng Xie, Qingyun Li, Tao Xu, Mingfei He, Ziyi Palacios, Tomás Zhao, Yuji Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Microsystems Technology Laboratories Massachusetts Institute of Technology CambridgeMA02139 United States School of Electrical Computer and Energy Engineering Arizona State University TempeAZ85287 United States

The performance of Schottky-gate p-GaN/AlGaN p-field effect transistors (FETs) based on a GaN-on-Si platform operation at high temperatures is reported. To enhance high-temperature robustness, the gate dielectric-free design is employed. Temperature-dependent transistor performance is systematically studied, including transfer characteristics, field-effect mobility, gate leakage, output characteristics, and ohmic contact. The channel resistance in p-FET and transfer length method structure are also analyzed. Gallium nitride (GaN) p-FET operation with an on/off current ratio of >103 and a decent −ID,max × LDS (≈10 μA) is achieved at a wide temperature range of 25–350 °C. This work offers valuable insights into the design and fabrication of GaN p-FET and GaN complementary metal-oxide-semiconductor for high-temperature applications. © 2025 Wiley-VCH GmbH.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

Monolithically 3D-Printed, Miniature Solenoids with Soft Magnetic Core for Compact Systems

Monolithically 3D-Printed, Miniature Solenoids with Soft Mag...

引用

Power, Energy and electrical engineering (CPEEE), International Conference on

作者： Jorge Cañada Luis Fernando Velásquez-García Electrical Engineering and Computer Science Department Massachusetts Institute of Technology Cambridge MA USA Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA

We report the design, fabrication, and characterization of the first monolithically 3D-printed, three-dimensional, three-material, cored inductors for use in compact electromagnetic systems. Additive manufacturing technologies can produce functional, freeform-compatible mechanical devices; however, the ability of additive manufacturing to create electronic components that could enable the monolithic fabrication of devices that integrate sensors and actuators is still unfulfilled. This study aims at advancing the state of the art through the demonstration of the first truly three-dimensional, monolithically 3D-printed, cored solenoids. The novel 3D-printed inductors are made via material extrusion using three PLA-based materials (dielectric, conductive, and soft magnetic). The devices attain Gauss-level magnetic fields while drawing tens-of-milliamps currents. The work is of great interest for fast and inexpensive fabrication of compact sensors, actuators, and power conversion systems, and for the integration of electronics with MEMS devices of intricate geometries.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Eye-tracking analysis of expertise-based visual behavior in 8K video quality assessment 25

Eye-tracking analysis of expertise-based visual behavior in ...

引用

Proceedings of the 2025 Symposium on Eye Tracking Research and Applications

作者： Yasuko Sugito Toshihisa Tanaka Department of Electrical Engineering and Computer Science Tokyo University of Agriculture and Technology Koganei Tokyo Japan and Science & Technology Research Laboratories NHK Setagaya Tokyo Japan Department of Electrical Engineering and Computer Science Tokyo University of Agriculture and Technology Koganei Tokyo Japan

来源：评论

学校读者我要写书评

暂无评论

GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C

GaN E-mode Complementary Transistors Based on a GaN-on-Si Pl...

引用

Device Research Conference

作者： Shisong Luo Cheng Chang Qingyun Xie Tao Li Mingfei Xu Ziyi He Tomás Palacios Yuji Zhao Department of Electrical and Computer Engineering Rice University Houston TX USA Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA School of Electrical Computer and Energy Engineering Arizona State University Tempe AZ USA

ISBN: (数字)9798350373738

ISBN: (纸本)9798350373745

GaN complementary transistors (CT) are highly desirable for GaN integrated circuits with low static power dissipation [1] . While recent experiments studied the feasibility of GaN CT [2 , 3] and improved GaN p-channel field effect transistor (p-FET) [4 , 5] , further advancements, e.g. in high temperature (HT) operation, would fully realize the potential of this emerging technology. HT operation (> 300°C, beyond the Si CMOS limit) is necessary to ensure its reliability at high power, harsh environment applications, and reduced thermal management needs. The degradation of electrode metal and gate dielectric was found to be the main challenge of GaN devices for HT operation [6 , 7] .

关键词： Integrated circuits Electrodes Electric potential Field effect transistors Metals Logic gates Thermal management

来源：评论

学校读者我要写书评

暂无评论

Dynamically Tunable Magnon-Magnon Coupling in a Perpendicular Anisotropy Magnetic Garnet-Ferromagnet Bilayer

引用

Physical Review Letters 2025年第12期134卷 126702-126702页

作者： Yabin Fan Takian Fakhrul Justin T. Hou Chung-Tao Chou Bharat Khurana Yaroslav Tserkovnyak Luqiao Liu Caroline A. Ross Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Materials and Metallurgical Engineering Bangladesh University of Engineering and Technology Dhaka 1000 Bangladesh Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Physics Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Department of Physics and Astronomy University of California Los Angeles Los Angeles California 90095 USA

We experimentally explore the interfacial coherent spin pumping in the magnon-magnon hybridized regime of a perpendicular anisotropy ferrimagnetic insulator (Bi-substituted yttrium iron garnet, or BiYIG) and ferromagnetic metal (permalloy, or Py) bilayer. In addition to the interfacial exchange coupling-induced avoided crossings between the uniform modes of BiYIG and Py, we observe that the gap opening can be tailored by changing the relative orientations of the BiYIG and Py magnetizations due to a purely dynamic interaction. The avoided-crossing gap opening is small (large) when BiYIG and Py magnetizations are nearly perpendicular (partially collinear) to each other, indicating that interfacial fieldlike torque from spin pumping plays a dominant role. Macrospin simulations with a sizable fieldlike spin-pumping torque agree with the gap opening trend observed in the experiments.

关键词： Anisotropy

来源：评论

学校读者我要写书评

暂无评论

Photo-induced macro/mesoscopic scale ion displacement in mixed-halide perovskites:ring structures and ionic plasma oscillations

引用

Light(science & Applications) 2022年第10期11卷 2388-2398页

作者： Xiaoxiao Sun Yong Zhang Weikun Ge Laboratory for Thin Films and Photovoltaics Empa-Swiss Federal Laboratories for Materials Science and Technology8600 DuebendorfSwitzerland Department of Information Technology and Electrical Engineering ETH Zurich8093 ZurichSwitzerland Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-RossendorfDresden 01328Germany Department of Electrical and Computer Engineering The University of North Carolina at CharlotteCharlotteNC 28223USA Department of Physics Tsinghua UniversityBeijing 10084People's Republic of China

Contrary to the common belief that the light-induced halide ion segregation in a mixed halide alloy occurs within the illuminated area,we find that the Br ions released by light are expelled from the illuminated area,which generates a macro/mesoscopic size anion ring surrounding the illuminated area,exhibiting a photoluminescence *** intriguing phenomenon can be explained as resulting from two counter-balancing effects:the outward diffusion of the light-induced free Br ions and the Coulombic force between the anion deficit and surplus *** after removing the illumination,the macro/mesoscopic scale ion displacement results in a built-in voltage of about 0.4 V between the ring and the ***,the displaced anions return to the illuminated area,and the restoring force leads to a damped ultra-low-frequency oscillatory ion motion,with a period of about 20-30 h and lasting over 100 *** finding may be the first observation of an ionic plasma oscillation in *** understanding and controlling the"ion segregation"demonstrate that it is possible to turn this commonly viewed"adverse phenomenon"into novel electronic applications,such as ionic patterning,self-destructive memory,and energy storage.

关键词： mixed removing return

来源：评论

学校读者我要写书评

暂无评论

Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C

Record High Temperature Performance in Scaled AlGaN/GaN-on-S...

引用

Device Research Conference

作者： John Niroula Matthew A. Taylor Qingyun Xie Pradyot Yadav Shisong Luo Yuji Zhao Tomás Palacios Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA U.S.A. Department of Electrical and Computer Engineering Rice University Houston TX U.S.A.

ISBN: (数字)9798350373738

ISBN: (纸本)9798350373745

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) currently define the state-of-the-art in high power density, radiofrequency (RF) semiconductor devices. However, there remain many relatively unexplored areas of penetration for GaN electronics, including high temperature (HT) electronics applications such as Venus exploration, hypersonic flight, jet engines, automotive vehicles, chemical plants, and geothermal energy [1] . Due to their low intrinsic carrier concentration, wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride are fundamentally better suited for HT operation. GaN technology is especially promising over SiC due to its higher mobility, greater critical field, and wider bandgap [2] . Furthermore, there has already been many excellent recent demonstrations of HT GaN based devices [3] – [8]

关键词： Radio frequency Power system measurements Silicon carbide Photonic band gap Semiconductor devices Venus HEMTs

来源：评论

学校读者我要写书评

暂无评论

3D Printed, Quadrupole Mass Filter with High Filter Resolution for Detecting Carbon-13 Isotopes

3D Printed, Quadrupole Mass Filter with High Filter Resoluti...

引用

International Conference on Vacuum Nanoelectronics (IVNC)

作者： Colin C. Eckhoff Hyeonseok Kim Luke J. Metzler Randall E. Pedder Luis Fernando Velásquez-García Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA Department of Mechanical Engineering Massachusetts Institute of Technology Cambridge MA USA Ardara Technologies LP Ardara PA USA Microsystems Technology Laboratories Massachusetts Institute of Technology Cambridge MA USA

We report the design, fabrication, and characterization of additively manufactured quadrupole mass filters with sufficient resolution and sensitivity to detect carbon-13 isotopes. This is a new milestone for 3D-printe... 详细信息

ISBN: (数字)9798350379761

ISBN: (纸本)9798350379778

关键词： Fabrication Filters Three-dimensional displays Sensitivity Mass spectroscopy Isotopes Nanoelectronics

来源：评论

学校读者我要写书评

暂无评论

High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT technology 9

High Temperature Robustness of Enhancement-Mode p-GaN-Gated ...

引用

9th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2022

作者： Yuan, Mengyang Xie, Qingyun Niroula, John Isamotu, Mohamed Fadil Rajput, Nitul S. Chowdhury, Nadim Palacios, Tomas Massachusetts Institute of Technology Microsystems Technology Laboratories CambridgeMA02139 United States Morgan State University Department of Electrical and Computer Engineering BaltimoreMD21251 United States Advanced Materials Research Center Technology Innovation Institute United Arab Emirates Bangladesh University of Engineering and Technology Department of Electrical and Electronic Engineering Dhaka1205 Bangladesh

ISBN: (数字)9781665489003

ISBN: (纸本)9781665489003

This paper reports on the high temperature (HT) robustness of enhancement-mode (E-mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an emphasis on the key transistor-level parameters for digital and analog mixed-signal applications. In-situ measurements from room temperature (RT) to 500 °C show that trends in Vth, RON, ID,max and IG,max are largely as expected based on first-order changes in the semiconductor properties. The fabricated transistors exhibited stable performance over 20 days at 500 °C. To the best of the authors' knowledge, this work is the first systematic study on the HT performance of E-mode p-GaN-gated AlGaN/GaN HEMTs, and sheds light on their use in mixed-signal and low-voltage power circuits. © 2022 IEEE.

关键词： III-V semiconductors

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：