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CLEO: Applications and technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics

作者： Palici, Alexandra Maria Lu, Xiyuan Srinivasan, Kartik Lu, Xinda Labbe, Fabien Ding, Yunhong Laroque, Hugo Hamerly, Ryan Errando-Herranz, Carlos Pu, Minhao Englund, Dirk Heuck, Mikkel Department of Electrical and Photonics Engineering Technical University of Denmark Lyngby2800 Denmark Microsystems and Nanotechnology Division Physical Measurement Laboratory National Institute of Standards and Technology GaithersburgMD20899 United States Joint Quantum Institute NIST University of Maryland College ParkMD20742 United States Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA02139 United States Electrical Engineering Mathematics and Computer Science Delft University of Technology Delft Netherlands

We demonstrate a hybrid device consisting of a thin film lithium niobate membrane transfer-printed onto a silicon nitride ring resonator. We measure quality factors in the 105 range at telecom wavelengths. © Opti... 详细信息

关键词： Silicon photonics

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Heterogeneous Integration of Lithium Niobate and Silicon Photonics for Nonlinear Optics

Heterogeneous Integration of Lithium Niobate and Silicon Pho...

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

ISBN: (纸本)9781957171395

关键词： Silicon nitride

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Orbital angular momentum emission from a high quality factor photonic crystal ring

Orbital angular momentum emission from a high quality factor...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Lu, Xiyuan Wang, Mingkang Zhou, Feng Heuck, Mikkel Zhu, Wenqi Aksyuk, Vladimir A. Englund, Dirk R. Srinivasan, Kartik Microsystems and Nanotechnology Division NIST GaithersburgMD20899 United States Joint Quantum Institute University of Maryland College ParkMD20742 United States Department of Electrical and Photonics Engineering Technical University of Denmark Kgs. Lyngby2800 Denmark Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States

We provide quantitative understanding of orbital angular momentum (OAM) emission for whispering gallery modes in a microring, and achieve high-Q (105 to 106), high ejection efficiency (up to 90 %), and high-OAM number... 详细信息

ISBN: (纸本)9781957171258

关键词： Whispering gallery modes

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Fully 3d-Printed Solenoids for Compact Systems

Fully 3d-Printed Solenoids for Compact Systems

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Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS)

作者： Jorge Cañada Luis Fernando Velásquez-García Electrical Engineering and Computer Science Massachusetts Institute of Technology USA Microsystems Technology Laboratories Massachusetts Institute of Technology USA

ISBN: (纸本)9781665493079

This work reports the design, fabrication, and characterization of the first monolithically 3D-printed, three-dimensional inductors for use in compact systems. The novel, air-core, 3D-printed inductors are made via extrusion using PLA-based materials and can attain Gauss-level magnetic fields while drawing tens-of-mA currents. The work is of great interest for fast and inexpensive fabrication of compact electromagnetic sensors, actuators, and power conversion systems, and for integration of electronics with MEMS devices with intricate geometries.

关键词： Micromechanical devices Fabrication Coils Three-dimensional displays Sensor phenomena and characterization Three-dimensional printing Sensor systems

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High Breakdown Electric Field (> 5 MV/cm) in UWBG AlGaN Transistors

arXiv

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arXiv 2025年

作者： Shin, Seungheon Pal, Hridibrata Pratt, Jon Niroula, John Zhu, Yinxuan Joishi, Chandan Klein, Brianna A. Armstrong, Andrew Allerman, Andrew A. Palacios, Tomás Rajan, Siddharth Department of Electrical & Computer Engineering The Ohio State University ColumbusOH43210 United States Department of Materials Science & Engineering The Ohio State University ColumbusOH43210 United States Microsystems Technology Laboratories Massachusetts Institute of Technology CambridgeMA02139 United States Sandia National Laboratories AlbuquerqueNM87123 United States

We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cutoff frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications. Copyright © 2025, The Authors. All rights reserved.

关键词： Electric breakdown of solids

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Submicron Memtransistors Made from Monocrystalline Molybdenum Disulfide

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ACS Nano 2024年第9期18卷 6936-6945页

作者： Yang, Shu-Ting Yang, Tilo H. Liang, Bor-Wei Lo, Han-Chieh Chang, Wen-Hao Lin, Po-Yen Su, Ching-Yuan Lan, Yann-Wen Graduate Institute of Photonics and Optoelectronics National Taiwan University Taipei116 Taiwan Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Taiwan Semiconductor Research Institute National Applied Research Laboratories Hsinchu300091 Taiwan Department of Physics National Taiwan Normal University Taipei116 Taiwan Institute of Cellular and Organismic Biology Academia Sinica Taipei115 Taiwan Graduate Institute of Energy Engineering National Central University Taoyuan320317 Taiwan

Multiterminal memtransistors made from two-dimensional (2D) materials have garnered increasing attention in the pursuit of low-power heterosynaptic neuromorphic circuits. However, existing 2D memtransistors tend to necessitate high set voltages (>1 V) or feature defective channels, posing concerns regarding material integrity and intrinsic properties. Herein, we present a monocrystalline monolayer MoS2 memtransistor designed for operation within submicron regimes. Under reverse drain bias sweeps, our experiments reveal memristive behavior within the device, further controllable through modulation of the gate terminal. This controllability facilitates the consistent manifestation of multistate memory effects. Notably, the memtransistor behavior becomes more significant as the channel length diminishes, particularly with channel lengths below 1.6 μm, showcasing an increase in the switching ratio alongside a decrease in the set voltage with the decreasing channel length. Our optimized memtransistor demonstrates the ability to exhibit individual resistance states spanning 5 orders of magnitude, with switching drain voltages of approximately 0.05 V. To elucidate these findings, we investigate hot carrier effects and their interplay with oxide traps within the HfO2 dielectric. This work highlights the importance of memtransisor behavior in highly scaled 2D transistors, particularly those featuring low contact resistances. This understanding holds the potential to tailor memory characteristics essential for the development of energy-efficient neuromorphic devices. © 2024 American Chemical Society.

关键词： Molybdenum disulfide

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Strong long-wave infrared optical response in a topological semiconductor with a Mexican-hat band structure

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Physical Review B 2025年第8期111卷 085101-085101页

作者： Mark J. Polking Haowei Xu Raman Sankar Kevin Grossklaus Ju Li Advanced Materials and Microsystems Group Massachusetts Institute of Technology Lincoln Laboratory Lexington Massachusetts 02421 USA Department of Nuclear Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Institute of Physics Academia Sinica Taipei 11529 Taiwan Department of Electrical and Computer Engineering Tufts University Medford Massachusetts 02155 USA Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA

Light sources and photodetectors operating in the far- to midinfrared (FIR/MIR) band (8–12 µm, 0.15–0.1 eV) remain relatively poorly developed compared to their counterparts operating in the visible and near-infrared ranges, despite extensive application potential for thermal imaging, standoff sensing, and other technologies. This is attributable in part to the lack of narrow-gap materials (<0.1 eV) with high optical gain and absorption. In this work, a narrow-gap semiconductor, Pb0.7Sn0.3Se, is demonstrated to exhibit an optical response >10× larger than that of HgxCd1−xTe (MCT), the dominant material for FIR/MIR photodetectors. A previous theoretical investigation indicated that chalcogen p and metal d band inversion in this material creates a Mexican hat band structure (MHBS), which results in a dramatic increase in the joint density of states at the optical transition edge compared to typical semiconductors. This prediction is experimentally validated here using single-crystal specimens of Pb0.7Sn0.3Se measured using temperature-dependent spectroscopic ellipsometry over a wavelength range 1.7–20 µm (0.73–0.062 eV). These measurements demonstrate a large enhancement in extinction coefficient and refractive index, which are characteristic of a MHBS in the vicinity of the absorption edge, in agreement with theoretical predictions. The realization of topological semiconductors with a MHBS is expected to lead to high-efficiency detectors operating in the FIR/MIR range.

关键词： Spectroscopic ellipsometry

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Ultra-Narrow-Linewidth Hybrid-Integrated Self-Injection Locked Laser at 780 nm

Ultra-Narrow-Linewidth Hybrid-Integrated Self-Injection Lock...

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IEEE Photonics Conference (IPC)

作者： Artem Prokoshin Michael Gehl Scott E. Madaras Weng W. Chow Yating Wan Computer Electrical and Mathematical Sciences and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal Kingdom of Saudi Arabia Photonic and Phononic Microsystems Sandia National Laboratories Albuquerque New Mexico USA

We demonstrate a hybrid-integrated self-injection locked laser operating at 780 nm with a linewidth of 103.8 Hz, and theoretically study the possibility of achieving Hz-level linewidth with this setup.

ISBN: (数字)9798350361957

ISBN: (纸本)9798350361964

关键词： Laser theory Laser mode locking Numerical models Photonics

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Identification of Noise Covariances for Voltage Dynamics Estimation in Microgrids

Identification of Noise Covariances for Voltage Dynamics Est...

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2022 IEEE Power and Energy Society General Meeting, PESGM 2022

作者： Bhujel, Niranjan Rai, Astha Tamrakar, Ujjwol Hansen, Timothy M. Tonkoski, Reinaldo South Dakota State University Electrical Engineering and Computer Science Department BrookingsSD United States Sandia National Laboratories Energy Storage Technology and Systems Department AlbuquerqueNM United States

ISBN: (数字)9781665408233

ISBN: (纸本)9781665408233

For the model-based control of low-voltage microgrids, state and parameter information are required. Different optimal estimation techniques can be employed for this purpose. However, these estimation techniques require knowledge of noise covariances (process and measurement noise). Incorrect values of noise covariances can deteriorate the estimator performance, which in turn can reduce the overall controller performance. This paper presents a method to identify noise covariances for voltage dynamics estimation in a microgrid. The method is based on the autocovariance least squares technique. A simulation study of a simplified 100 kVA, 208 V microgrid system in MATLAB/Simulink validates the method. Results show that estimation accuracy is close to the actual value for Gaussian noise, and non-Gaussian noise has a slightly larger error. © 2022 IEEE.

关键词： Dynamics

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Hardware Implementation of Low-latency Image Denoising with Wavelet Shrinkage and Noise2Noise-based Learning for Ultra-high Definition Cameras

Hardware Implementation of Low-latency Image Denoising with ...

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IEEE International Conference on Consumer Electronics (ICCE)

作者： Kodai Kikuchi Kohei Tomioka Akira Honji Takenobu Usui Keigo Hirakawa Kazuya Kitamura Science & Technology Research Laboratories Japan Broadcasting Corporation Tokyo Japan Department of Electrical and Computer Engineering University of Dayton Ohio U.S.A

There is a growing demand for real-time image denoising in low-light shooting with ultra-high definition cameras. This paper presents a denoising method that incorporates Haar-wavelet shrinkage denoising and a minimum mean square error estimation based on an extension of the Noise2Noise learning technique, which can perform low-latency processing and can be adapted to non-linear processed signals without prior knowledge of noise and signal distributions. By introducing a two-dimensional kernel to reduce memory usage in the coring function estimator, we demonstrate real-time hardware denoising for luminance signals of 4K 60 fps video with a delay of less than one millisecond.

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