This brief presents an adjustable 100 kV high voltage DC power supply with ZigBee wireless feedback for the X-ray system. The proposed system is powered by a 48 V DC power source, and a combination of an autonomous cu...
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In this study, we present a remarkable improvement in the performance of hafnia-based ferroelectric tunnel junctions (FTJs) using oxygen scavenging technology and extremely low-damage (ELD) deposition, leading to a si...
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Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombinat...
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Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombination rate in organic materials, although without a clear understanding of how its parameters relate to the underlying material properties or how it should be modified to account for the finite lifetime of exciton intermediates in, for example, the doped emissive layer of an organic light-emitting diode (OLED). Here, we formalize SRH recombination for organic semiconductors based on diffusive trapping and Langevin recombination. We show that including the exciton state suppresses the recombination rate in host-guest systems with type II energy level alignment whenever the interfacial gap between the host and guest molecular orbitals is comparable to the exciton energy. These results quantify the balance between bimolecular and trap-mediated recombination in doped OLED emissive layers, and indicate that devices with type II host-guest pairings can, in principle, beat the thermodynamic limit of their neat guest counterparts.
Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While vari...
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Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While various nontraditional magneto-electrical effects have been studied in magnetic Weyl semimetals, transport properties related to spin-polarized tunneling from these materials remain less explored. In this work, we developed fully epitaxial magnetic tunnel junctions (MTJs) based on a ferromagnetic Weyl semimetal Co2MnGa. By growing Co2MnGa films under different conditions, we fabricated a series of MTJs possessing different degrees of order in the semimetal electrodes and compared their tunneling magnetoresistance (TMR). We find that the TMR becomes enhanced with the improvement of the chemical ordering of Co2MnGa. Our results reveal the relationship between the spin tunneling in MTJs and the chemical order of the Co2MnGa electrode and provide insights on further enhancing TMR via semimetal engineering.
Lithium-sulfur(Li-S)batteries hold the potential to revolutionize energy storage due to the high theoretical capacity and energy ***,the commercialization process is seriously hindered by the rapid capacity decay and ...
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Lithium-sulfur(Li-S)batteries hold the potential to revolutionize energy storage due to the high theoretical capacity and energy ***,the commercialization process is seriously hindered by the rapid capacity decay and low utilization of sulfur,caused by the inevitable slow dynamics and the“shuttle effect”.The incorporation of metal-based electrocatalysts into sulfur cathodes shows promise in promoting the conversion of lithium polysulfides(LiPSs),reducing the“shuttle effect”,and enhancing cell kinetics and cycle *** these,Fe-based materials,characterized by environmental friendliness,low cost,abundant reserves,and high activity,are extensively used in sulfur cathode *** article reviews the advancements of Fe-based materials in enhancing Li-S batteries in recent *** from single/multi-component Fe-based metal compounds and single/bimetallic atoms,the influence of different Fe coordination environments on the conversion mechanism of LiPSs is *** is hoped that this review and the proposed prospects can further stimulate the development and application of the Fe element in Li-S batteries in the future.
Micro or submicron scale light-emitting diodes(μLEDs)have been extensively studied recently as the next-generation display *** is desired that μLEDs exhibit high stability and efficiency,submicron pixel size,and pot...
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Micro or submicron scale light-emitting diodes(μLEDs)have been extensively studied recently as the next-generation display *** is desired that μLEDs exhibit high stability and efficiency,submicron pixel size,and potential monolithic integration with Si-based complementary metal-oxide-semiconductor(CMOS)*** such uLEDs,however,has remained a daunting *** polar nature of Ill-nitrides causes severe wavelength/color instability with varying carrier concentrations in the active *** etching-induced surface damages and poor material quality of high indium composition InGaN quantum wells(QWs)severely deteriorate the performance of uLEDs,particularly those emitting in the green/red *** we report,for the first time,μLEDs grown directly on Si with submicron lateral *** μLEDs feature ultra-stable,bright green emission with negligible quantum-confined Stark effect(QCSE).Detailed elemental mapping and numerical calculations show that the QCSE is screened by introducing polarization doping in the active region,which consists of InGaN/AlGaN QWs surrounded by an AlGaN/GaN shell with a negative Al composition gradient along the *** comparison with conventional GaN barriers,AlGaN barriers are shown to effectively compensate for the tensile strain within the active region,which significantly reduces the strain distribution and results in enhanced indium incorporation without compromising the material *** study provides new insights and a viable path for the design,fabrication,and integration of high-performance μLEDs on Si for a broad range of applications in on-chip optical communication and emerging augmented reality/mixed reality devices,and so on.
Two-dimensional transition metal dichalcogenides (TMDCs) such as tungsten diselenide (WSe2) exhibit exceptional optoelectronic properties that can be explored for sensing applications using simplified device architect...
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Monolayer transition metal dichalcogenides (TMDs), including WSe2 often show unique and exciting optical and electrical features. WSe2 is well-suited for high-performance optoelectronic devices, such as photodetectors...
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Recurrent Neural Networks (RNNs) are commonly used in data-driven approaches to estimate the Remaining Useful Lifetime (RUL) of power electronic devices. RNNs are preferred because their intrinsic feedback mechanisms ...
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