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Integrated preparation and manipulation of high‑dimensional flying structured photons

eLight 2024年第1期4卷 185-192页

作者： Haoqi Zhao Yichi Zhang Zihe Gao Jieun Yim Shuang Wu Natalia MLitchinitser Li Ge Liang Feng Department of Electrical and Systems Engineering University of PennsylvaniaPhiladelphiaPA 19104USA Department of Materials Science and Engineering University of PennsylvaniaPhiladelphiaPA 19104USA Department of Electrical and Computer Engineering and Department of Physics Duke UniversityDurhamNC 27708USA Department of Engineering Science and Physics College of Staten IslandCUNYStaten IslandNY 10314USA The Graduate Center CUNYNew YorkNY 10016USA

The hope for a futuristic global quantum internet that provides robust and high-capacity quantum information transfer lies largely on qudits,the fundamental quantum information carriers prepared in high-dimensional superposition ***,preparing and manipulating N-dimensional flying qudits as well as subsequently establishing their entanglement are still challenging tasks,which require precise and simultaneous maneuver of 2(N-1)parameters across multiple degrees of ***,using an integrated approach,we explore the synergy from two degrees of freedom of light,spatial mode and polarization,to generate,encode,and manipulate flying structured photons and their formed qudits in a four-dimensional Hilbert space with high quantum fidelity,intrinsically enabling enhanced noise resilience and higher quantum data *** four eigen spin–orbit modes of our qudits possess identical spatial–temporal characteristics in terms of intensity distribution and group velocity,thereby preserving long-haul coherence within the entirety of the quantum data transmission *** leveraging the bi-photon entanglement,which is well preserved in the integrated manipulation process,we present versatile spin–orbit cluster states in an extensive dimensional Hilbert *** cluster states hold the promise for quantum error correction which can further bolster the channel robustness in long-range quantum communication.

关键词： cluster thereby preparing

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RUL Estimation for Power Electronic Devices Using RNNs

RUL Estimation for Power Electronic Devices Using RNNs

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2024 Prognostics and System Health Management Conference, PHM 2024

作者： Cai, Congrui Lu, Zhonghai School of Electrical Engineering and Computer Science KTH Royal Institute of Technology Embedded Systems Master Program Sweden School of Electrical Engineering and Computer Science Department of Electrical Engineering KTH Royal Institute of Technology Sweden

ISBN: (纸本)9798350360585

Recurrent Neural Networks (RNNs) are commonly used in data-driven approaches to estimate the Remaining Useful Lifetime (RUL) of power electronic devices. RNNs are preferred because their intrinsic feedback mechanisms are better suited to model time-series data. However, the impact of RNN complexity on estimation accuracy is rarely discussed in the literature. This issue is important because choosing a lower-complexity model that delivers the same or similar performance as a higher-complexity model can increase implementation efficiency. In the paper, we use three RNN models, namely, the vanilla version, LSTM (Long Short Term Memory) and GRU (Gated Recurrent Unit) to conduct RUL estimation for power electronic devices. We use two accelerated aging datasets, one dataset targeting the package failure of MOSFETs, and the other dataset targeting package failure of power diodes. Our study shows that a lower-complexity RNN does not necessarily deliver a lower performance. Similarly, a higher-complexity model does not assure a higher performance. As such, our work highlights the importance of selecting a proper neural network for RUL estimation not biased towards complex models. This is especially useful and important for implementing such RUL estimation techniques in embedded resource-constrained and speed-limited computins platforms. © 2024 IEEE.

关键词： Long short-term memory

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Active pixel image sensor array for dual vision using large-area bilayer WS_(2)

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InfoMat 2024年第4期6卷 68-82页

作者： Arindam Bala Mayuri Sritharan Na Liu Muhammad Naqi Anamika Sen Gyuchull Han Hyun Yeol Rho Youngki Yoon Sunkook Kim School of Advanced Materials Science and Engineering Sungkyunkwan UniversitySuwonRepublic of Korea Waterloo Institute for Nanotechnology(WIN) University of WaterlooWaterlooOntarioCanada Department of Electrical and Computer Engineering University of WaterlooWaterlooOntarioCanada

Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security *** traditional systems rely on separate sensors for different lighting conditions,TMDs can absorb light across a broad-spectrum *** this study,a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was *** bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor *** WS2-based thin-film transistors(TFTs)exhibit high average mobility,excellent Ion/Ioff,and uniform electrical *** optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W1(at a wavelength of 405 nm)owing to the photogating ***,red,green,blue,and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were *** proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing,which could lead to a range of new opportunities in various applications,including night vision,pedestrian detection,various surveillance,and security systems.

关键词： dual vision image sensors infrared wavelength detection phototransistors thin-film transistor arrays transition metal dichalcogenides

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Trade Ease with Machine Learning and AWS

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IEEE Access 2023年 11卷 25893-25905页

作者： Teja, Kamurthi Ravi Liu, Chuan-Ming National Taipei University of Technology International Program of Electrical Engineering and Computer Science Taipei10608 Taiwan National Taipei University of Technology Department of Computer Science and Information Engineering Taipei10608 Taiwan

Global trading is undergoing significant changes, necessitating modifications to the trading strategies. This study presents a newly developed cloud-based trading strategy that uses Amazon Web Services (AWS), machine learning (ML), and data science to automate trading tasks. The study begins by creating a machine learning trading strategy using a customized deep neural network (DNN). The strategy was then tested using a trading station before deployment on a cloud machine. The execution of the strategy resulted in a total profit of 42.74526 USD, with a test accuracy score of 87.45% and a training accuracy score of 89.15% over 6047 epochs. The roadmap provides a step-by-step overview of the entire process from strategy development to execution. In addition, this study offers insights into related issues and solutions that can enhance the effectiveness of trading strategies. Overall, this study contributes significantly to the field of cloud-based trading strategies and opens avenues for future research. © 2013 IEEE.

关键词： Deep neural networks

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Charging-free thermally regenerative electrochemical cycle for electricity generation from daytime solar heat and nighttime darkness

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Nano Research Energy 2023年第4期2卷 1-3页

作者： Hang Zhang Cheng-Wei Qiu Qing Wang Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore

The extensive exploration of energy conversion harvested from the environment into electricity is recently driven by the significant demand to power off-grid electronics,particularly Internet-of-Things(IoT)*** highlight previews the latest advance of a charging-free thermally regenerative electrochemical cycle(TREC)for continuous electricity generation from solar heat and darkness with the aid of dual-mode thermal *** a spontaneous all-day electricity generation with high power and efficiency shows great potential for powering a wide range of distributed electronics for IoT and other applications.

关键词： redox flow cell thermally regenerative electrochemical cycle radiative cooling dual-mode thermal regulation low-grade heat harvesting internet-of-things

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Flexible fibres take fabrics into the information age

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NATURE 2024年第7997期626卷 38-39页

作者： Jia, Xiaoting Parrott, Alex Xiaoting Jia is in the Bradley Department of Electrical and Computer Engineering the Department of Materials Science and Engineering and the School of Neuroscience Virginia Tech Blacksburg Virginia 24061 USA. Alex Parrott is in the Bradley Department of Electrical and Computer Engineering Virginia Tech Blacksburg Virginia 24061 USA.

A technique for embedding fibres with semiconductor devices produces defect-free strands that are hundreds of metres long. Garments woven with these threads offer a tantalizing glimpse of the wearable electronics of t... 详细信息

关键词： engineering materials science Technology

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Magnetic tunnel junctions featuring the topological Weyl semimetal Co2MnGa

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Physical Review Applied 2024年第4期22卷 044024页

作者： Zhiping He Chung-Tao Chou Eugene Park Alexandre C. Foucher Brooke C. McGoldrick Qiuyuan Wang Justin T. Hou Luqiao Liu Department of Electrical Engineering and Computer Science Department of Physics Department of Materials Science and Engineering

Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While various nontraditional magneto-electrical effects have been studied in magnetic Weyl semimetals, transport properties related to spin-polarized tunneling from these materials remain less explored. In this work, we developed fully epitaxial magnetic tunnel junctions (MTJs) based on a ferromagnetic Weyl semimetal Co2MnGa. By growing Co2MnGa films under different conditions, we fabricated a series of MTJs possessing different degrees of order in the semimetal electrodes and compared their tunneling magnetoresistance (TMR). We find that the TMR becomes enhanced with the improvement of the chemical ordering of Co2MnGa. Our results reveal the relationship between the spin tunneling in MTJs and the chemical order of the Co2MnGa electrode and provide insights on further enhancing TMR via semimetal engineering.

关键词： Spintronics Tunneling magnetoresistance Ferromagnets Heusler alloy Magnetic tunnel junctions Single crystal materials Weyl semimetal Epitaxy

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Excitonic Shockley-Read-Hall recombination in organic semiconductors

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Physical Review Applied 2024年第6期21卷 064019-064019页

作者： Noel C. Giebink Stephen R. Forrest Department of Electrical Engineering and Computer Science and Department of Physics Department of Materials Science and Engineering

Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombination rate in organic materials, although without a clear understanding of how its parameters relate to the underlying material properties or how it should be modified to account for the finite lifetime of exciton intermediates in, for example, the doped emissive layer of an organic light-emitting diode (OLED). Here, we formalize SRH recombination for organic semiconductors based on diffusive trapping and Langevin recombination. We show that including the exciton state suppresses the recombination rate in host-guest systems with type II energy level alignment whenever the interfacial gap between the host and guest molecular orbitals is comparable to the exciton energy. These results quantify the balance between bimolecular and trap-mediated recombination in doped OLED emissive layers, and indicate that devices with type II host-guest pairings can, in principle, beat the thermodynamic limit of their neat guest counterparts.

关键词： Carrier generation & recombination Organic LEDs Organic semiconductors Semiconductors materials modeling

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Modeling the effects of salt concentration on aqueous and organic electrolytes

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npj Computational materials 2023年第1期9卷 546-552页

作者： Stephanie C.C.van der Lubbe Pieremanuele Canepa Department of Materials Science and Engineering National University of Singapore9 Engineering Drive 1117575 SingaporeSingapore Department of Chemical and Biomolecular Engineering National University of Singapore4 Engineering Drive 4117585 SingaporeSingapore Department of Electrical and Computer Engineering and Texas Center for Superconductivity University of HoustonHoustonTX 77204USA

Understanding the thermodynamic properties of electrolyte solutions is of vital importance for a myriad of physiological and technological *** mean activity coefficientγ±is associated with the deviation of an electrolyte solution from its ideal behavior and may be obtained by combining the Debye-Hückel(DH)and Born(B)***,the DH and B equations depend on the concentration and temperature-dependent static permittivity of the solutionεr(c,T)and the size of the solvated ions ri,whose experimental data is often not ***,we use a combination of molecular dynamics and density functional theory to predictεr(c,T)and ri,which enables us to apply the DH and B equations to any technologically relevant aqueous and nonaqueous electrolyte at any concentration and temperature of interest.

关键词： equations electrolyte apply

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InGaN micro-light-emitting diodes monolithically grown on Si:achieving ultra-stable operation through polarization and strain engineering

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Light(science & Applications) 2022年第10期11卷 2540-2548页

作者： Yuanpeng Wu Yixin Xiao Ishtiaque Navid Kai Sun Yakshita Malhotra Ping Wang Ding Wang Yuanxiang Xu Ayush Pandey Maddaka Reddeppa Walter Shin Jiangnan Liu Jungwook Min Zetian Mi Department of Electrical Engineering and Computer Science University of MichiganAnn ArborMI 48109USA Department of Materials Science and Engineering University of MichiganAnn ArborMI 48109USA

Micro or submicron scale light-emitting diodes(μLEDs)have been extensively studied recently as the next-generation display *** is desired that μLEDs exhibit high stability and efficiency,submicron pixel size,and potential monolithic integration with Si-based complementary metal-oxide-semiconductor(CMOS)*** such uLEDs,however,has remained a daunting *** polar nature of Ill-nitrides causes severe wavelength/color instability with varying carrier concentrations in the active *** etching-induced surface damages and poor material quality of high indium composition InGaN quantum wells(QWs)severely deteriorate the performance of uLEDs,particularly those emitting in the green/red *** we report,for the first time,μLEDs grown directly on Si with submicron lateral *** μLEDs feature ultra-stable,bright green emission with negligible quantum-confined Stark effect(QCSE).Detailed elemental mapping and numerical calculations show that the QCSE is screened by introducing polarization doping in the active region,which consists of InGaN/AlGaN QWs surrounded by an AlGaN/GaN shell with a negative Al composition gradient along the *** comparison with conventional GaN barriers,AlGaN barriers are shown to effectively compensate for the tensile strain within the active region,which significantly reduces the strain distribution and results in enhanced indium incorporation without compromising the material *** study provides new insights and a viable path for the design,fabrication,and integration of high-performance μLEDs on Si for a broad range of applications in on-chip optical communication and emerging augmented reality/mixed reality devices,and so on.

关键词： polarization diodes strain

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