检索结果-内蒙古大学图书馆

Squid-inspired and wirelessly controllable display for active camouflage in aquatic-environment

npj Flexible Electronics 2024年第1期8卷 900-909页

作者： Doyoung Kim Seung Won Seon Minkyung Shin Jihwan Kim Bogeun Kim Janghoon Joo Sang Uk Park Wooseok Kim Hee Kyu Lee Byeong Woon Lee Se Gi Lee Su Eon Lee Ji-Hun Seo Seung Ho Han Bong Hoon Kim Sang Min Won Department of Electrical and Computer Engineering Sungkyunkwan University2066Seobu-roJangan-guSuwon 16419Republic of Korea Department of Smart Wearable Engineering Soongsil UniversitySeoul 06978Republic of Korea Electronic Convergence Materials and Devices Research Center Korea Electronics Technology Institute(KETI)Seongnam 13509Republic of Korea Department of Materials Science and Engineering Korea UniversitySeoul 02841Republic of Korea Department of Robotics and Mechatronics Engineering DGISTDaegu 42988Republic of Korea

Achieving optimal camouflage in an aquatic environment necessitates the ability to modulate transmittance in response to the surrounding obscurity and potential *** adaptation involves a dynamic transition from transparency to a deep-blue color,especially in low-light or dark *** a strategy promotes a seamless assimilation with the surroundings,enabling the absorption of searchlights and,subsequently,diminishing the risk of detection by ***,the presence of sophisticated mechanisms that facilitates stable and efficient control of transmittance is imperative,enabling smooth transition between transparent and deep-blue hues within the aquatic *** study presents nature-inspired programmable camouflage system that integrates an electrochromic display as the primary transmittance change element and a wireless base module for power and data *** technology offers a robust and flexible construction,ensuring stable operation as demonstrated through mechanical-fatigue experiments and quantitative simulation.A custom circuit and a power-control software package enable active control of multiple electrochromic displays while submerged in water.

关键词： transparency submerged lights

来源：评论

学校读者我要写书评

暂无评论

Automated Phase and Orientation Mapping of Multiphase, Polycrystalline Hafnia-Zirconia Thin Films Using 4D-STEM

引用

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada 2023年第1期29卷 300-302页

作者： Baucom, Garrett Hershkovitz, Eitan Sondhi, Kartik Nishida, Toshikazu Kim, Honggyu Department of Materials Science & Engineering University of Florida Gainesville FL United States Department of Electrical & Computer Engineering University of Florida Gainesville FL United States

来源：评论

学校读者我要写书评

暂无评论

Hybrid Integration of Hook-shaped Traveling-wave Semiconductor Optical Amplifier and Taiji Ring Resonator for Unidirectional Lasing

Hybrid Integration of Hook-shaped Traveling-wave Semiconduct...

引用

2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Zeng, Siwei Zhao, Xiaolei Sweatt, Lance Porter, Chas Zhu, Lin Department of Electrical and Computer Engineering Center for Optical Materials Science and Engineering Technologies Clemson University ClemsonSC29634 United States

ISBN: (纸本)9781957171258

We demonstrate a unidirectional ring hybrid diode laser based on integration of a hook-shaped traveling-wave semiconductor optical amplifier (SOA) and Taiji ring resonator. The additional crossover bending waveguide inside the silicon nitride Taiji ring introduces a nonreciprocal loss in the laser cavity while the gain is provided by a multiple depth etched hook-shaped SOA. © 2023 The Author(s)

关键词： Semiconductor optical amplifiers

来源：评论

学校读者我要写书评

暂无评论

Machine learning electron-phonon interactions in two-dimensional semiconducting materials: The case of zero-point renormalization

引用

Physical Review materials 2024年第10期8卷 L101001页

作者： Anubhab Haldar Quentin Clark Marios Zacharias Feliciano Giustino Sahar Sharifzadeh Department of Electrical and Computer Engineering Department of Philosophy Oden Institute for Computational Engineering and Sciences Department of Physics Division of Materials Science and Engineering

We utilize first-principles theory to investigate the role of electron-phonon interactions within a dataset of monolayer materials. Using density functional theory to describe excited-state transitions and the special displacement method to describe the role of phonons, we analyze the relationship between simple physical observables and electron-phonon coupling strength. For over 100 materials, we compute the band gap renormalization due to zero-point vibrational (ZPR) motion as a measure of electron-phonon interactions and train a machine learning model based on physical parameters. We demonstrate that the strength of electron-phonon interactions is highly dependent on the band gap, dielectric constant, and degree of ionicity, all of which can be physically justified. We then apply this model to 1302 2D materials, predicting the ZPR, which for five randomly selected materials tested agree well with the first-principles predictions. This work provides an approach for quantitatively predicting the ZPR as a measure of electron-phonon interactions in 2D materials.

关键词： Electron-phonon coupling Electronic structure 2-dimensional systems Machine learning

来源：评论

学校读者我要写书评

暂无评论

Effective short text classification via the fusion of hybrid features for IoT social data

引用

Digital Communications and Networks 2022年第6期8卷 942-954页

作者： Xiong Luo Zhijian Yu Zhigang Zhao Wenbing Zhao Jenq-Haur Wang School of Computer and Communication Engineering University of Science and Technology BeijingBeijing100083China Shunde Innovation School University of Science and Technology BeijingFoshan528399China Beijing Key Laboratory of Knowledge Engineering for Materials Science Beijing100083China Department of Electrical Engineering and Computer Science Cleveland State UniversityClevelandOH44115USA Department of Computer Science and Information Engineering National Taipei University of TechnologyTaipei10608China

Nowadays short texts can be widely found in various social data in relation to the 5G-enabled Internet of Things (IoT). Short text classification is a challenging task due to its sparsity and the lack of context. Previous studies mainly tackle these problems by enhancing the semantic information or the statistical information individually. However, the improvement achieved by a single type of information is limited, while fusing various information may help to improve the classification accuracy more effectively. To fuse various information for short text classification, this article proposes a feature fusion method that integrates the statistical feature and the comprehensive semantic feature together by using the weighting mechanism and deep learning models. In the proposed method, we apply Bidirectional Encoder Representations from Transformers (BERT) to generate word vectors on the sentence level automatically, and then obtain the statistical feature, the local semantic feature and the overall semantic feature using Term Frequency-Inverse Document Frequency (TF-IDF) weighting approach, Convolutional Neural Network (CNN) and Bidirectional Gate Recurrent Unit (BiGRU). Then, the fusion feature is accordingly obtained for classification. Experiments are conducted on five popular short text classification datasets and a 5G-enabled IoT social dataset and the results show that our proposed method effectively improves the classification performance.

关键词： Information fusion Short text classi fication BERT Bidirectional encoder representations fr 0om transformers Deep learning Social data

来源：评论

学校读者我要写书评

暂无评论

Bonding and Failure Mechanisms of Sintered-silver Die-attach on Electroless Nickel (Phosphorus) Surface Finish for Packaging Power Electronics Modules

引用

IEEE Transactions on Power Electronics 2024年第9期40卷 13086-13098页

作者： Wang, Meiyu Zhang, Haobo Hu, Weibo Mei, Yunhui Lu, Guo-Quan Nankai University College of Electronic Information and Optical Engineering Tianjin300350 China Shenzhen research institute of Nankai University Shenzhen518083 China Nankai University Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology Tianjin300350 China Tiangong University School of Electrical Engineering Tianjin300387 China The Bradley Department of Electrical and Computer Engineering The Department of Materials Science and Engineering BlacksburgVA24061 United States

The low-temperature silver sintering technology has been increasingly applied for die-attach in power electronics modules. Most reported studies of the technology involved bonding on silver (Ag) or gold (Au) surface finish. Compared to Ag or Au, electroless nickel (phosphorus) or Ni(P) is a cost-effective and widely-used process for surface-finishing module substrates. However, there is a lack of studies on sintered-Ag bonding on the Ni(P) surface. In this study, IGBT devices were bonded using pressureless Ag-sintering on electroless Ni(P)-plated substrates. Micro-morphologies and macro-properties were then characterized before and after three reliability tests including high temperature storage life (HTSL), steady-state temperature-humidity bias life (STHBL), and temperature cycling (TC) tests. The as-sintered joints measured strong adhesion of 39 MPa, resulting from Ag-NiO-Ni chemical bonds across the (111) crystal planes with reduced lattice misfit. The Ag-Ni(P) joints exhibited high reliability under high-temperature and thermo-mechanical stress in the HTSL and TC tests, but performed poorly when exposed to high humidity in the STHBL test. The founding in this study helps understand the physical nature of bonding between sintered-Ag and Ni(P), and its failure mechanisms under the influence of different physical stresses. © 1986-2012 IEEE.

关键词： Bond strength (chemical)

来源：评论

学校读者我要写书评

暂无评论

Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition

引用

Nano Letters 2024年第27期24卷 8277-8286页

作者： Liu, Hongwei Zhang, Tianyi Wu, Peng Lee, Hae Won Liu, Zhenjing Tang, Tsz Wing Tang, Shin-Yi Kang, Ting Park, Ji-Hoon Wang, Jun Zhang, Kenan Zheng, Xudong Peng, Yu-Ren Chueh, Yu-Lun Liu, Yuan Palacios, Tomás Kong, Jing Luo, Zhengtang Department of Chemical and Biological Engineering Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction The Hong Kong University of Science and Technology Kowloon999077 Hong Kong Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Department of Materials Science and Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Department of Materials Science and Engineering National Tsing-Hua University Hsinchu30013 Taiwan Department of Materials Science and Engineering Korea University Seoul02841 Korea Republic of Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha410082 China

The controlled vapor-phase synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for functional applications. While chemical vapor deposition (CVD) techniques have been successful for transition metal sulfides, extending these methods to selenides and tellurides often faces challenges due to uncertain roles of hydrogen (H2) in their synthesis. Using CVD growth of MoSe2 as an example, this study illustrates the role of a H2-free environment during temperature ramping in suppressing the reduction of MoO3, which promotes effective vaporization and selenization of the Mo precursor to form MoSe2 monolayers with excellent crystal quality. As-synthesized MoSe2 monolayer-based field-effect transistors show excellent carrier mobility of up to 20.9 cm2/(V·s) with an on-off ratio of 7 × 107. This approach can be extended to other TMDs, such as WSe2, MoTe2, and MoSe2/WSe2 in-plane heterostructures. Our work provides a rational and facile approach to reproducibly synthesize high-quality TMD monolayers, facilitating their translation from laboratory to manufacturing. © 2024 American Chemical Society.

关键词： Monolayers

来源：评论

学校读者我要写书评

暂无评论

Lithographic printing inspired in-situ transfer of MXene-based films with localized topo-electro tunability for high-performance flexible pressure sensors

引用

Nano Research 2023年第11期16卷 12670-12679页

作者： Qiuyang Yan Yi Zhou Yin Cheng Liangjing Shi Ranran Wang Lian Gao Jing Sun State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of ScienceShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore School of Chemistry and Materials Science Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou 310024China School of Materials Science and Engineering Shanghai Jiao Tong UniversityShanghai 200240China

MXene-based films have been intensively explored for construction of piezoresistive flexible pressure sensors owing to their excellent mechanical and electrical *** pressure sensitivity relies on pre-molding a flexible substrate,or regulating the micromorphology of MXene sheets,to obtain a micro-structured ***,the two avenues usually require complicated and time-consuming microfabrication or wet chemical processing,and are limited to non-adjustable topographicelectrical(topo-electro)***,we propose a lithographic printing inspired in-situ transfer(LIPIT)strategy to fabricate MXene-ink films(MIFs).In LIPIT,MIFs not only inherit ridge-and-valley microstructure from paper substrate,but also achieve localized topo-electro tunability by programming ink-writing patterns and *** MIF-based flexible pressure sensor with periodical topo-electro gradient exhibits remarkably boosted sensitivity in a wide sensing range(low detection limit of 0.29 Pa and working range of 100 kPa).The MIF sensor demonstrates versatile applicability in both subtle and vigorous pressuresensing fields,ranging from pulse wave extraction and machine learning-assisted surface texture recognition to piano-training glove(PT-glove)for piano *** LIPIT is quick,low-cost,and compatible with free ink/substrate combinations,which promises a versatile toolbox for designing functional MXene films with tailored morphological-mechanical-electrical properties for extended application scenarios.

关键词： MXene film transfer printing surface tunability flexible pressure sensor

来源：评论

学校读者我要写书评

暂无评论

AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cm 82

AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Cur...

引用

82nd Device Research Conference, DRC 2024

作者： Kim, Eungkyun Chen, Yu-Hsin Encomendero, Jimy Jena, Debdeep Xing, Huili Grace Cornell University School of Electrical and Computer Engineering IthacaNY14853 United States Cornell University Department of Materials Science and Engineering IthacaNY14853 United States

ISBN: (纸本)9798350373738

Wide energy bandgap and high saturation velocity of GaN have played a pivotal role in increasing the output power density (Pout) of a radio frequency (RF) transistor, allowing for an increased radar and communication system range. A further improvement in output power densities of GaN HEMTs is currently thermally limited due to the waste heat generated during the device operation in the channel layer. Therefore, to realize reliable and sustained operation at high Pout , thermal management in GaN HEMTs must be improved. We present AlN/GaN/AlN HEMTs, where an AlN buffer layer is homoepitaxially grown on bulk AlN substrates. In this heterostructure, AlN simultaneously offers an ultra-wide energy bandgap (~6.1 eV) and high thermal conductivity (340 W/m·K) [1];the thermal advantage of an AlN buffer layer in HEMTs grown on SiC substrates has been recently confirmed by Soctera [2]. AlN homoepitaxy employed in our heterostructure further improves the thermal performance by potentially eliminating the thermal boundary resistance at the growth interface [3]. To this end, we report the on-current and breakdown behavior of HEMTs grown on Al-polar bulk AlN for the first time after the dramatically improved AlN homoepitaxy by MBE [4]. © 2024 IEEE.

关键词： Aluminum nitride

来源：评论

学校读者我要写书评

暂无评论

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

引用

Nano-Micro Letters 2023年第2期15卷 161-171页

作者： Minjong Lee Tae Wook Kim Chang Yong Park Kimoon Lee Takashi Taniguchi Kenji Watanabe Min‑gu Kim Do Kyung Hwang Young Tack Lee Department of Electrical and Computer Engineering Inha UniversityIncheon 22212Republic of Korea Department of Materials Science and Engineering The University of Texas at DallasRichardsonTX 75080USA Center for Opto‑Electronic Materials and Devices Post‑Silicon Semiconductor InstituteKorea Institute of Science and Technology(KIST)Seoul 02792Republic of Korea Department of Physics Kunsan National UniversityGunsan 54150Republic of Korea Advanced Materials Laboratory National Institute for Materials ScienceTsukuba 305‑0044Japan Department of Information and Communication Engineering Inha UniversityIncheon 22212Republic of Korea Division of Nanoscience and Technology KIST SchoolUniversity of Science and Technology(UST)Seoul 02792Republic of Korea Department of Electronic Engineering Inha UniversityIncheon 22212Republic of Korea

Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction *** this study,we demonstrate graphene(Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors(FET).Unlike conventional FET operation,our Gr-bridge devices exhibit nonclassical transfer characteristics(humped transfer curve),thus possessing a negative differential *** phenomena are interpreted as the operating behavior in two series-connected FETs,and they result from the gate-tunable contact capacity of the Gr-bridge ***-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow-and wide-bandgap materials as more advanced circuit applications based on non-classical transfer ***,we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.

关键词： Graphene bridge Heterostructure device Non-classical transfer characteristics Multi-value logic inverter Frequency tripler

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：