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From light sensing to adaptive learning:hafnium diselenide reconfigurable memcapacitive devices in neuromorphic computing

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Light(Science & Applications) 2025年第1期14卷 215-226页

作者： Bashayr Alqahtani Hanrui Li Abdul Momin Syed Nazek El-Atab Electrical and Computer Engineering Program Computer Electrical Mathematical Science and Engineering DivisionKing Abdullah University of Science and Technology(KAUST)ThuwalSaudi Arabia Electrical Engineering Department College of EngineeringPrincess Nourah Bint Abdulrahman University(PNU)RiyadhSaudi Arabia

Advancements in neuromorphic computing have given an impetus to the development of systems with adaptive behavior,dynamic responses,and energy efficiency *** charge-based or emerging memory technologies such as memristors have been developed to emulate synaptic plasticity,replicating the key functionality of neurons—integrating diverse presynaptic inputs to fire electrical impulses—has remained *** this study,we developed reconfigurable metal-oxide-semiconductor capacitors(MOSCaps)based on hafnium diselenide(HfSe2).The proposed devices exhibit(1)optoelectronic synaptic features and perform separate stimulus-associated learning,indicating considerable adaptive neuron emulation,(2)dual light-enabled charge-trapping and memcapacitive behavior within the same MOSCap device,whose threshold voltage and capacitance vary based on the light intensity across the visible spectrum,(3)memcapacitor volatility tuning based on the biasing conditions,enabling the transition from volatile light sensing to non-volatile optical data *** reconfigurability and multifunctionality of MOSCap were used to integrate the device into a leaky integrate-and-fire neuron model within a spiking neural network to dynamically adjust firing patterns based on light stimuli and detect exoplanets through variations in light intensity.

关键词： integrate volatile integrating

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Robust Graph Autoencoder-Based Detection of False Data Injection Attacks Against Data Poisoning in Smart Grids

IEEE Transactions on Artificial Intelligence

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IEEE Transactions on Artificial Intelligence 2024年第3期5卷 1287-1301页

作者： Takiddin, Abdulrahman Ismail, Muhammad Atat, Rachad Davis, Katherine R. Serpedin, Erchin Department of Electrical and Computer Engineering Texas A and M University College StationTX77843 United States Department of Computer Science Tennessee Tech University CookevilleTN38505 United States Department of Electrical and Computer Engineering Program Texas A and M University Qatar Doha23874 Qatar

Machine learning-based detection of false data injection attacks (FDIAs) in smart grids relies on labeled measurement data for training and testing. The majority of existing detectors are developed assuming that the adopted datasets for training have correct labeling information. However, such an assumption is not always valid as training data might include measurement samples that are incorrectly labeled as benign, namely, adversarial data poisoning samples, which have not been detected before. Neglecting such an aspect makes detectors susceptible to data poisoning. Our investigations revealed that detection rates (DRs) of existing detectors significantly deteriorate by up to 9-29% when subject to data poisoning in generalized and topology-specific settings. Thus, we propose a generalized graph neural network-based anomaly detector that is robust against FDIAs and data poisoning. It requires only benign datasets for training and employs an autoencoder with Chebyshev graph convolutional recurrent layers with attention mechanism to capture the spatial and temporal correlations within measurement data. The proposed convolutional recurrent graph autoencoder model is trained and tested on various topologies (from 14, 39, and 118-bus systems). Due to such factors, it yields stable generalized detection performance that is degraded by only 1.6-3.7% in DR against high levels of data poisoning and unseen FDIAs in unobserved topologies. Impact Statement-Artificial Intelligence (AI) systems are used in smart grids to detect cyberattacks. They can automatically detect malicious actions carried out bymalicious entities that falsifymeasurement data within power grids. Themajority of such systems are data-driven and rely on labeled data for model training and testing. However, datasets are not always correctly labeled since malicious entities might be carrying out cyberattacks without being detected, which leads to training on mislabeled datasets. Such actions might degrade the d

关键词： Cybersecurity

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Artificial visual perception neural system using a solution-processable MoS_(2)-based in-memory light sensor

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Light(Science & Applications) 2023年第8期12卷 1583-1594页

作者： Dayanand Kumar Lana Joharji Hanrui Li Ayman Rezk Ammar Nayfeh Nazek El-Atab Smart Advanced Memory Devices and Applications(SAMA)LaboratoryElectrical and Computer Engineering ProgramComputer Electrical Mathematical Science and Engineering DivisionKing Abdullah University of Science and Technology(KAUST)Thuwal 23955Kingdom of Saudi Arabia Department of Electrical Engineering and Computer Science Khalifa UniversityAbu Dhabi 127788United Arab Emirates

Optoelectronic devices are advantageous in in-memory light sensing for visual information processing,recognition,and storage in an energy-efficient ***,in-memory light sensors have been proposed to improve the energy,area,and time efficiencies of neuromorphic computing *** study is primarily focused on the development of a single sensing-storage-processing node based on a two-terminal solution-processable MoS2 metal-oxide-semiconductor(MOS)charge-trapping memory structure—the basic structure for charge-coupled devices(CCD)—and showing its suitability for in-memory light sensing and artificial visual *** memory window of the device increased from 2.8 V to more than 6V when the device was irradiated with optical lights of different wavelengths during the program ***,the charge retention capability of the device at a high temperature(100 ℃)was enhanced from 36 to 64%when exposed to a light wavelength of 400 *** larger shift in the threshold voltage with an increasing operating voltage confirmed that more charges were trapped at the Al_(2)O_(3)/MoS_(2) interface and in the MoS_(2) layer.A small convolutional neural network was proposed to measure the optical sensing and electrical programming abilities of the *** array simulation received optical images transmitted using a blue light wavelength and performed inference computation to process and recognize the images with 91%*** study is a significant step toward the development of optoelectronic MOS memory devices for neuromorphic visual perception,adaptive parallel processing networks for in-memory light sensing,and smart CCD cameras with artificial visual perception capabilities.

关键词： visual neural process

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ESG Investing: A Statistically Valid Approach to Data-Driven Decision Making and the Impact of ESG Factors on Stock Returns and Risk

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IEEE Access 2024年 12卷 69434-69444页

作者： Teja, Kamurthi Ravi Liu, Chuan-Ming National Taipei University of Technology International Program of Electrical Engineering and Computer Science Taipei10608 Taiwan National Taipei University of Technology Department of Computer Science and Information Engineering Taipei10608 Taiwan

This study examines the impact of environmental, social, and governance (ESG) factors on economic investment from a statistical perspective, aiming to develop a tested investment strategy that capitalizes on the connection between ESG factors and financial performance. ESG investing: A statistically valid approach to data-driven decision-making (ESGI-SVADDM) investment strategy is based on a rigorous, statistically valid approach that utilizes data, math, statistics, and data science libraries to drive investment decisions, eliminating the need for personal opinions and subjectivity. The process includes establishing an investment thesis, formulating testable hypotheses (HPS), retrieving and refining relevant data, calculating relevant measures, and testing and validating all hypotheses. The study uses S&P 500 stock data and ESG data from Sustainalytics to test the hypotheses. The empirical tests conducted revealed a negative correlation between ESG risk and expected returns, as well as a positive trend in the relationship between ESG risk and the overall risk of stocks. Moreover, the study found that higher ESG risk scores are associated with lower returns for investors, and that adopting a strategy of investing in stocks with low ESG risk and shorting stocks with high ESG risk yields superior returns compared to the market portfolio. © 2013 IEEE.

关键词： Investments

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Boost DC-DC converter with regenerative snubber

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Energy Reports 2024年 12卷 798-819页

作者： Yau, Yeu-Torng Department of Ph.D. Program Prospective Technology of Electrical Engineering and Computer Science National Chin-Yi University of Technology Taichung Taiwan Department of Electrical Engineering National Chin-Yi University of Technology Taichung Taiwan

To accommodate the wide range of input voltages supplied by redundant batteries and ensure an adequate hold-up time for communication systems during utility power failures, power supplies used in 5 G base stations typically include a front-end boost converter as the first stage and a second-stage isolated converter. In this paper, a new topology for a regenerative snubber in boost converters is proposed. Compared to traditional active or passive snubber topologies, the proposed snubber offers the advantages of having fewer components and occupying less space. Moreover, it does not require additional active devices and can be driven by widely-used commercial PWM control integrated circuits, achieving a higher level of cost-effectiveness and offering increased industrial applications. The final prototype of a power supply for a networking switch hub (as used in 5 G base stations) is fabricated to demonstrate the feasibility of the proposed method. © 2024 The Authors

关键词： Topology

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Recent advances in tip-enhanced Raman spectroscopy probe designs

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Nano Research 2023年第4期16卷 5555-5571页

作者： Da Xu Boqun Liang Yaodong Xu Ming Liu Department of Electrical and Computer Engineering University of California-RiversideRiversideCalifornia 92521USA Materials Science and Engineering program University of California-RiversideRiversideCalifornia 92521USA

Tip-enhanced Raman spectroscopy(TERS)imaging is a super-resolution imaging technique that features the merits of both surface-enhanced Raman spectroscopy(SERS)and scanning probe microscopy(SPM),such as the high chemical sensitivity from the former and the nanoscale spatial resolution from the *** advantages make TERS an essential nanospectroscopic characterization technique for chemical analysis,materials science,bio-sensing,*** probes,the most critical factor determining the TERS imaging quality,are expected to provide a highly confined electromagnetic hotspot with a minimized scattering background for the generation of Raman signals with high spatial *** two decades of development,numerous probe design concepts have been proposed and *** review provides a comprehensive overview of the state-of-the-art TERS probe designs,from the working mechanism to the practical *** start with reviewing the recent development of TERS configurations and the corresponding working mechanisms,including the SPM platforms,optical excitation/collection techniques,and probe preparation *** then review the emerging novel TERS probe designs,including the remote-excitation probes,the waveguide-based nanofocusing probes,the metal-coated nanofocusing probes,the nanowire-assisted selective-coupling probes,and the tapered metal-insulator-metal *** discussion focuses on a few critical aspects,including the surface-plasmon-polariton(SPP)hotspot excitation technique,conversion efficiency,working frequency,and *** the end,we review the latest TERS applications and give a perspective on the future of TERS.

关键词： tip-enhanced Raman spectroscopy plasmonics scanning probe microscopy nanoscale imaging nanophotonics nanofocusing

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Correntropy-Based Data Selective Adaptive Filtering

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IEEE Transactions on Circuits and Systems I: Regular Papers 2024年第2期71卷 754-766页

作者： Chien, Ying-Ren Wu, Sheng-Teng Tsao, Hen-Wai Diniz, Paulo S.R. Adaptive and Autonomous Communication Laboratory Department of Electrical Engineering National Ilan University Yilan City260007 Taiwan College of Electrical Engineering and Computer Science Graduate Institute of Communication Engineering National Taiwan University Taipei10617 Taiwan Program of Electrical Engineering Department of Electronics and Computer Engineering COPPE/Poli Universidade Federal do Rio de Janeiro Rio de Janeiro68504 Brazil

Data selection can be used in conjunction with adaptive filtering algorithms to avoid unnecessary weight updating and thereby reduce computational overhead. This paper presents a novel correntropy-based data selection method as an alternative to conventional data selection mechanisms based on squared error values. We developed a variable correntropy sensing algorithm to maximize the instantaneous correntropy function for the Gaussian kernel function to mitigate the impact of impulse noise and other forms of noise that can be disregarded in data selection. The proposed data selection mechanism can be implemented with any adaptive filtering algorithm. In simulations, the proposed method (implemented with the least mean squared algorithm) outperformed comparable error-based data selection schemes in terms of hit rate and miss rate, and the resulting weight updating ratio was close to the expected weight updating ratio. © 2023 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.

关键词： Adaptive filters

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Compact Model Build Upon Dynamic Weighting Artificial Neural Network Approach for Complementary Field Effect Transistors

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IEEE Transactions on Electron Devices 2024年第1期71卷 246-253页

作者： Butola, Rajat Li, Yiming Kola, Sekhar Reddy National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan Institute of Pioneer Semiconductor Innovation The Institute of Artificial Intelligence Innovation National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program The Institute of Communications Engineering the Institute of Biomedical Engineering Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan

In this work, a dynamic weighting-artificial neural network (DW-ANN) methodology is presented for quick and automated compact model (CM) generation. It takes advantage of both TCAD simulations for high accuracy and SPICE simulations for cost-effectiveness. This methodology is developed for gate-all-around (GAA) silicon (Si) nanosheet (NS) complementary field effect transistor (CFET), a potential candidate for future CMOS technology due to its innate properties. The critical process variation (PV) sources that severely degrade the CFET performance are estimated using DW-ANN. It reduces the computation cost and predicts the effects of PV sources with less than 1% error. Furthermore, a compact DW-ANN-based Verilog-A model has been developed that captures the dc as well as transient behavior accurately for circuit-level analysis. CFET-based circuits such as inverter, 6T-static random access memory (SRAM), and ring oscillator (RO) are characterized and implemented using DW-ANN-based CM. The overall average error of the model is reported as less than 2%. Therefore, the proposed device and circuit modeling approach provides a feasible solution for the rapid compact modeling of new emerging devices with good convergence and high accuracy. © 1963-2012 IEEE.

关键词： Neural networks

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RUL Estimation for Power Electronic Devices Using RNNs

RUL Estimation for Power Electronic Devices Using RNNs

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2024 Prognostics and System Health Management Conference, PHM 2024

作者： Cai, Congrui Lu, Zhonghai School of Electrical Engineering and Computer Science KTH Royal Institute of Technology Embedded Systems Master Program Sweden School of Electrical Engineering and Computer Science Department of Electrical Engineering KTH Royal Institute of Technology Sweden

ISBN: (纸本)9798350360585

Recurrent Neural Networks (RNNs) are commonly used in data-driven approaches to estimate the Remaining Useful Lifetime (RUL) of power electronic devices. RNNs are preferred because their intrinsic feedback mechanisms are better suited to model time-series data. However, the impact of RNN complexity on estimation accuracy is rarely discussed in the literature. This issue is important because choosing a lower-complexity model that delivers the same or similar performance as a higher-complexity model can increase implementation efficiency. In the paper, we use three RNN models, namely, the vanilla version, LSTM (Long Short Term Memory) and GRU (Gated Recurrent Unit) to conduct RUL estimation for power electronic devices. We use two accelerated aging datasets, one dataset targeting the package failure of MOSFETs, and the other dataset targeting package failure of power diodes. Our study shows that a lower-complexity RNN does not necessarily deliver a lower performance. Similarly, a higher-complexity model does not assure a higher performance. As such, our work highlights the importance of selecting a proper neural network for RUL estimation not biased towards complex models. This is especially useful and important for implementing such RUL estimation techniques in embedded resource-constrained and speed-limited computins platforms. © 2024 IEEE.

关键词： Long short-term memory

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Surface phase diagram of CsSnI3 from first-principles calculations

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Physical Review Materials 2024年第9期8卷 093401页

作者： Kejia Li Chadawan Khamdang Mengen Wang Department of Electrical and Computer Engineering Materials Science and Engineering Program

CsSnI3 is widely studied as an environmentally friendly Pb-free perovskite material for optoelectronic device applications. To further improve material and device performance, it is important to understand the surface structures of CsSnI3. We generate surface structures with various stoichiometries, perform density functional theory calculations to create phase diagrams of the CsSnI3 (001), (110), and (100) surfaces, and determine the most stable surfaces under a wide range of Cs, Sn, and I chemical potentials. Under I-rich conditions, surfaces with Cs vacancies are stable, which lead to partially occupied surface states above the valence band maximum. Under I-poor conditions, we find the stoichiometric (100) surface to be stable under a wide region of the phase diagram, which does not have any surface states and can contribute to long charge-carrier lifetimes. Consequently, the I-poor (Sn-rich) conditions will be more beneficial to improve the device performance.

关键词： Electronic structure Surface reconstruction Surface states Perovskites Semiconductors Density functional theory

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