We inverse design L3 photonic crystal cavity in Silicon Nitride to achieve high quality factor, low mode volume and high collection efficiencies. We fabricate our device and integrate them with colloidal perovskite qu...
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We inverse design L3 photonic crystal cavity in Silicon Nitride to achieve high quality factor, low mode volume and high collection efficiencies. We fabricate our device and integrate them with colloidal perovskite qu...
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Non-Hermitian optics provides a unique platform to take advantage of absorption losses in materials and control radiative properties. We demonstrate a non-Hermitian metasurface that exhibit directional suppression of ...
Equipping buildings with energy harvesting windows is a practical way to reduce greenhouse gas (GhG) emission. Utilizing semi-transparent organic photovoltaics (ST-OPVs) for this application requires the device to be ...
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Exceptional point (EP)-based optical sensors exhibit exceptional sensitivity but poor detectivity. Slightly off EP operation boosts detectivity without much loss in sensitivity. We experimentally demonstrate a high-de...
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The emerging field of quantum materials involves an exciting new class of materials in which charge,spin,orbital,and lattice degrees of freedom are intertwined,exhibiting a plethora of exotic physical *** materials in...
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The emerging field of quantum materials involves an exciting new class of materials in which charge,spin,orbital,and lattice degrees of freedom are intertwined,exhibiting a plethora of exotic physical *** materials include,but are not limited to,superconductors,topological quantum matter,and systems with frustrated spins,which enable a wide range of potential applications in biomedicine,energy transport and conversion,quantum sensing,and quantum information processing。
This research presents a novel electromagnetic-based sensor for inline measurement of unmilled rice paddy moisture content in the rice mill factory. The proposed sensor has been designed based on the modified planar d...
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This research presents a novel junctionless spacer-engineered gate stacked Silicon-On-Insulator (SOI) FinFET for hydrogen gas sensing. The study investigates the sensor’s transfer characteristics, energy band diagram...
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ISBN:
(数字)9798350391107
ISBN:
(纸本)9798350391114
This research presents a novel junctionless spacer-engineered gate stacked Silicon-On-Insulator (SOI) FinFET for hydrogen gas sensing. The study investigates the sensor’s transfer characteristics, energy band diagram and surface potential under varying pressures. Threshold voltage and switching ratio sensitivities are calculated to assess the sensor’s responsiveness. A maximum value of 125.64 for I ON /I OFF sensitivity and 0.24 for V TH sensitivity is obtained at P=10 -10 Torr. Simulations performed on 3D ATLAS Silvaco tool reveal significant differences in performance between the junctionless (JLT) sensor and the one having a junction. Specifically, the JLT fin-based sensor demonstrates substantially improved sensitivity to hydrogen gas. The combination of improved sensitivity and the SOI FinFET architecture presents a promising approach for designing high-performance hydrogen gas sensors suitable for diverse applications using JLT SOI FinFETs.
We propose a digital twin using multiplane light conversion and neural networks for a digitally programmable multiplexer for space division multiplexing. The new approach is promising for few-mode fiber communication....
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Nonlinear behavior in the hopping transport of interacting charges enables reconfigurable logic in disordered dopant network devices, where voltages applied at control electrodes tune the relation between voltages app...
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Nonlinear behavior in the hopping transport of interacting charges enables reconfigurable logic in disordered dopant network devices, where voltages applied at control electrodes tune the relation between voltages applied at input electrodes and the current measured at an output electrode. From kinetic Monte Carlo simulations we analyze the critical nonlinear aspects of variable-range hopping transport for realizing Boolean logic gates in these devices on three levels. First, we quantify the occurrence of individual gates for random choices of control voltages. We find that linearly inseparable gates such as the xor gate are less likely to occur than linearly separable gates such as the and gate, despite the fact that the number of different regions in the multidimensional control voltage space for which and or xor gates occur is comparable. Second, we use principal-component analysis to characterize the distribution of the output current vectors for the (00,10,01,11) logic input combinations in terms of eigenvectors and eigenvalues of the output covariance matrix. This allows a simple and direct comparison of the behavior of different simulated devices and a comparison to experimental devices. Third, we quantify the nonlinearity in the distribution of the output current vectors necessary for realizing Boolean functionality by introducing three nonlinearity indicators. The analysis provides a physical interpretation of the effects of changing the hopping distance and temperature and is used in a comparison with data generated by a deep neural network trained on a physical device.
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