Femtosecond laser ablation of Silicon (100) with thermal oxide thin films was studied in order to further understand the ablative properties of thin films and to evaluate their influence on the ablation of the substra...
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We present the development of a 64 channel readout ASIC called DEDIX for high count rate position-sensitive measurements using semiconductor detectors. The ASIC is designed in 0.35 μm CMOS process and its total area ...
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The refractive index contrast in dielectric multilayer structures, optical resonators and photonic crystals is an important figure of merit, which creates a strong demand for high quality thin films with a very low re...
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The refractive index contrast in dielectric multilayer structures, optical resonators and photonic crystals is an important figure of merit, which creates a strong demand for high quality thin films with a very low refractive index. SiO2 nano-rod layers with low refractive indicesn = 1.08, the lowest ever reported in thin-film materials, is grown by oblique-angle e-beam deposition of SiO2 with vapor incident angle 85 degree. Scanning electron micrographs reveal a highly porous columnar structure of the low-refractive-index (low-n) film. The gap between the SiO2 nano-rods is ≤50 nm, i.e. much smaller than the wavelength of visible light, and thus sufficiently small to make scattering very small. Optical micrographs of the low-n film deposited on a Si substrate reveal a uniform specular film with no apparent scattering. The unprecedented low index of the SiO2 nano-rod layer is confirmed by both ellipsometry measurements and thin film interference measurements. A single-pair distributed Bragg reflector (DBR) employing the SiO2 nano-rod layer is demonstrated to have enhanced reflectivity, showing the great potential of low-n films for applications in photonic structures and devices.
States with private correlations but little or no distillable entanglement were recently reported. Here, we consider the secure distribution of such states, i.e., the situation when an adversary gives two parties such...
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States with private correlations but little or no distillable entanglement were recently reported. Here, we consider the secure distribution of such states, i.e., the situation when an adversary gives two parties such states and they have to verify privacy. We present a protocol which enables the parties to extract from such untrusted states an arbitrarily long and secure key, even though the amount of distillable entanglement of the untrusted states can be arbitrarily small.
A method for noninvasive, quantitative characterization of tissues using molecular fluorescence was applied to porcine knee cartilage. Experimental and computational results agreed to within 5% and were reproducible w...
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We report the observation of coherent phonon oscillations of radial breathing modes in insolated single-wall carbon nanotubes in suspension. Resonantly-excited radial breathing modes are analyzed to give us a new tool...
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Raman spectra of carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition were analyzed. A typical Raman spectrum of carbon nanowalls exhibits three main bands, i.e., the G, D and D’ bands center...
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ISBN:
(纸本)1424400775
Raman spectra of carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition were analyzed. A typical Raman spectrum of carbon nanowalls exhibits three main bands, i.e., the G, D and D’ bands centered at about 1580, 1350 and 1620 cm -1 , respectively. The peak intensity ratio of D to G band (I D /I G ) was found to be strongly influenced by edge length density of carbon nanowalls, suggesting that the strong D band is originated from the defects at the edges. The addition of water during the growth process increased the defects formed by water assisted oxidization which in turn, resulted in the increase of the D band’s relative intensity.
We have fabricated a unique triple quantum dot artificial molecule on a GaAs/AlGaAs heterostructure containing a two‐dimensional electron gas. The triple dot is defined using fifteen gates for optimal tunability. We ...
We have fabricated a unique triple quantum dot artificial molecule on a GaAs/AlGaAs heterostructure containing a two‐dimensional electron gas. The triple dot is defined using fifteen gates for optimal tunability. We have measured the transport characteristics of the individual quantum dots composing the triple dot down to the few‐electron regime. We observe clear evidence of N=1 (single electron) Kondo effect as well as excited states of the one electron dot. We supplement our experimental investigations with exact diagonalization calculations within the realistic three dot geometry in order to investigate the exchange coupling of the triple dot molecule.
We investigated electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size with c-axis grown BaTiO3/MgO ferro-electric thin films. In this study, the calculations are ...
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ISBN:
(纸本)1566775159
We investigated electro-optic modulator structures to target low drive voltage, high-speed modulation, and small device size with c-axis grown BaTiO3/MgO ferro-electric thin films. In this study, the calculations are focused on the ideal thin film with a quadratic relation between the half-wave drive voltage Vπ and the interaction length L in the electro-optic modulation case we obtained in previous work. With the quadratic electro-optic modulating relation and the optimal rib waveguide structure of BaTiO3/MgO thin films, the frequency-voltage-size performances for 2.5GHz, 10GHz, 40GHz, and 100GHz modulation bandwidths have been obtained under half-wave drive voltages of 0.8V, 1.6V, 3.0V and 4.8V, respectively, for the ideal film with r51=730 pm/V at 1550nm wavelength, where both the phase velocity matching condition and the conductor induced microwave attenuation are considered. The required device lengths to achieve these four typical values of modulation bandwidth are 3.3 mm, 0.8 mm, 0.4 mm and 0.2 mm, respectively. With the c-axis grown BaTiO3/MgO crystal thin films and the quadratic electro-optic modulating relation, an electro-optic coefficient of reff=180 pm/V for the c-axis grown BaTiO3/MgO ferro-electric thin films was measured, which is relatively far from the ideal value of r51=560 pm/V. copyright The Electrochemical Society.
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