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American Control Conference (ACC)

作者： Christopher Lin Paul Kalata Applied Physics Laboratory Johns Hopkins University Laurel MD USA Department of Electrical and Computer Engineering Drexel University Philadelphia PA USA

An optimal filtering solution is presented for the continuous time target tracking problem. The Tracking Index (the target maneuverability to the sensor measurement uncertainty ratio) is found to have fundamental role in the optimal steady-state solution. The Tracking Index solution yields a closed form, consistent set of tracking gains, relationships, and performances. The resulting continuous time stochastic regulators are termed α c -ß c or α c -ß c -γ c target trackers (depending on the tracking order) [15]. For discrete time measurement, the discrete target trackers are defined based on the discrete Tracking Index [10]; however, the process presented in this paper deals with specific models of target maneuvers: velocity, acceleration and jerk. The Tracking Index is dependent on fundamental characteristics of the tracking problem: the track period, measurement noise, target maneuverability and tracker order.

关键词： Target tracking Filtering Measurement uncertainty Steady-state Performance gain Stochastic processes Regulators Time measurement Accelerometers Acceleration

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Submillimeter-wave endfire slotline antennas

Submillimeter-wave endfire slotline antennas

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Antennas and Propagation Society International Symposium

作者： S. Gearhart H. Ekstrom P. Acharya E. Kollberg S. Jacobsson G. Rebeiz Electrical Engineering and computer Science Department University of Michigan Ann Arbor MI USA Department of Applied Electron Physics Chalmers University of Technology Gothenburg Sweden

Endfire slotline antennas have been integrated on a 1.75 mu m-thick dielectric substrate. The thin substrate allows the upper frequency limit of the slotline antennas to be pushed beyond 1 THz. Antennas have been fabricated and tested at 350 and 802 GHz. The patterns exhibit high directivity (15+or-1 dB) and wide bandwidth. In the future, these antennas will be combined with SIS junctions for low-noise astronomical receivers.< >

关键词： Slotline Slot antennas Dielectric substrates Antenna measurements Biomembranes Submillimeter wave technology Space technology Broadband antennas Frequency Testing

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A comparative study of bearing designs and operational environments for harmonic side-drive micromotors

A comparative study of bearing designs and operational envir...

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IEEE International Conference on Micro Electro Mechanical Systems

作者： V.R. Dhuler M. Mehregany S.M. Phillips J.H. Lang Electronics Design Center Department of Electrical Engineering & Applied Physics Case Western Reserve University Cleveland OH USA Laboratory of Electromagnetic & Electronic Systems Department of Electrical Engineering & Computer Science Massachusetts Institute of Technology Cambridge MA USA

The authors report the development of flange bearing harmonic side-drive (referred to as wobble) micromotors and the results from a comparative study of the operation of flange and center-pin bearing micromotors in different gas environments. Both the flange and center-pin wobble micromotors have been operated with excitation as low as 30 V across 1.5 mu m rotor/stator gaps. In contrast to the center-pin bearing wobble micromotors it was found that the performance of the flange bearing wobble micromotors is not significantly affected by the operational environment. A convenient experimental procedure to characterize friction in wobble micromotors has been developed. Additionally, the requisite wobble micromotor dynamic model for extracting the bearing and bushing/flange frictional parameters from the experimental data is discussed.< >

关键词： Micromotors Flanges Rotors Fabrication Insulators Gears Stators Contacts Friction physics

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Variations in strain amplitude and phase ina a cylindrical specimen of Tb/sub 0.3/Dy/sub 0.7/Fe/sub 1.95/ in an AC magnetic field

Variations in strain amplitude and phase ina a cylindrical s...

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International Conference on Magnetics (INTERMAG)

作者： M.P. Schulze R. Chung J.D. Greenough R.D. Greenough D.C. Jiles R. Weber Department of Applied Physics University of Hull Hull UK Department of Electrical and Computer Engineering Iowa State University Ames IA USA Ames Laboratory Iowa State University Ames IA USA

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Correlation between the complex conductivity and the transmission coefficient of high T/sub c/ superconducting films of thickness smaller than the penetration depth

Correlation between the complex conductivity and the transmi...

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Asia-Pacific Conference on Microwave

作者： J. Ceremuga B. Langley Department of Applied Physics University of Stanford Stanford CA USA Department of Electrical & Computer Engineering James Cook University Townsville QLD Australia Hewlett Packard Company Palo Alto CA USA

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The reaction γ +d → π⁺ + π^-+p + n between 570 and 850 MeV and Δ⁺⁺Δ^- production

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Zeitschrift für Physik A Hadrons and Nuclei 1992年第3期344卷 335-344页

作者： Asai, M. Endo, I. Harada, M. Kasai, S. Niki, K. Sumi, Y. Kato, S. Maruyama, K. Murata, Y. Muto, M. Yoshida, K. Iwatani, K. Hasai, H. Ito, H. Maki, T. Rangacharyulu, C. Shimizu, H. Wada, Y. Department of Physics Hiroshima University Higashi-Hiroshima 724 Japan Department of Electrical Engineering Hiroshima Institute of Technology Hiroshima 731-51 Japan Ricoh Co. Ltd. Tokyo 112 Bunkyo-ku Japan Institute for Nuclear Study University of Tokyo Tanashi 188 Japan Department of Applied Physics and Chemistry Hiroshima University Higashi-Hiroshima 724 Japan Department of Physics Saga University Saga 840 Japan University of Occupational and Environmental Health Kitakyushu 807 Japan Department of Physics University of Saskatchewan Saskatoon S7N 0W0 Canada Department of Physics Faculty of General Education Yamagata University Yamagata 990 Japan Meiji College of Pharmacy Tokyo 154 Japan Institute for Nuclear Study University of Tokyo Tanashi 188 Japan Sumisho Computer Service Corporation Tokyo 101 Japan

The reaction γ+d → π++π-+p + n has been measured in a kinematically complete way at incident photon energies from 570 to 850 MeV in steps of 40 MeV. From detailed comparison of measured data with results of event ... 详细信息

The reaction γ+d → π⁺+π^-+p + n has been measured in a kinematically complete way at incident photon energies from 570 to 850 MeV in steps of 40 MeV. From detailed comparison of measured data with results of event simulations, it is concluded that three different mechanisms, the quasi-free, double-delta and phase space productions, contribute to the reaction. Each of the cross sections corresponding to these mechanisms is determined separately. © 1993 Springer-Verlag.

关键词： 13.60.Rj 14.20.Gk 25.20.Lj

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Arrays. A software package for analysis of antenna arrays

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computer Applications in engineering Education 1992年第1期1卷 109-109页

作者： Elsherbeni, A.Z. Ginn, P.H. Electrical Engineering Department University of Mississippi University Mississippi 38677 Dr. Atef Z. Elsherbeni:received an honorary BSc in Electronics and Communications an honorary BSc in Applied Physics and an MEng in Electrical Engineering all from Cairo University Cairo Egypt in 1976 1979 and 1982 respectively. He also received a PhD in Electrical Engineering from Manitoba University Winnipeg Manitoba Canada in 1987. He was a research assistant with the faculty of Engineering at Cairo University from 1976 to 1982 and at the Electrical Engineering Department Manitoba University from 1983 to 1986 and a Postdoctoral fellow in the same department from January to August 1987. He joined the faculty at the University of Mississippi in August 1987 where he is currently an Associate Professor of Electrical Engineering. During the last few years he was involved in developing software for undergraduate education related to electromagnetic waves and antenna design courses. His professional interests include microstrip antennas scattering and diffraction of electromagnetic waves numerical techniques and computer applications for electromagnetics education. He has authored or coauthored over 80 technical papers and reports on applied electromagnetics antenna design and microwave subjects. Dr. Elsherbeni is a senior member of the Institute of Electrical and Electronics Engineers (IEEE) belonging to the Antennas and Propagation Microwave Theory and Techniques and Magnetics Societies. His honorary memberships include the Electromagnetics Academy and the Scientific Sigma Xi Society. Patrick Ginn:was born in Corinth Mississippi on June 30 1969. Mr. Ginn attended Kossuth High School where he was awarded the STAR student award. He attended Northeast Mississippi Junior College from 1987 to 1989. In 1989 he began attending the University of Mississippi. He is currently enrolled as an undergraduate in the Electrical Engineering Department. Mr. Ginn expects to receive his BSEE in August 1992. He has r

This article describes a software package useful for the instruction of antenna array theory. The program provides the radiation pattern of different types of antennas, the array factor of linear, two-dimensional and three-dimensional arrays, and the total radiation pattern. The elements of the array are isotropic source, Hertzian dipole, straight thin wire dipole, and finite line source with uniform current distribution. The user has the freedom to choose one of the supported element types or to provide the pattern of an antenna element based on experimental or calculated data. This article serves as a tutorial for selected examples as well as a quick guide for the use of this software.

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THE EFFECT OF FREQUENCY ON THE RESISTANCE AND INTERNAL INDUCTANCE OF BARE ACSR CONDUCTORS

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IEEE TRANSACTIONS ON POWER DELIVERY 1991年第3期6卷 1319-1326页

作者： MORGAN, VT FINDLAY, RD Department of Electrical and Computer Engineering McMaster University Hamilton ONT Canada Division of Applied Physics CSIRO Lindfield Australia

An experimental investigation of the effects of varying the frequency on the electrical characteristics of a 54/19 ACSR conductor is described. Current from a sine wave alternator with precise voltage and frequency controls in the range 25 to 60Hz was supplied to a pair of parallel tensioned lengths of the conductor, forming a loop within a nonmagnetic enclosure. The dc and ac resistances, the internal inductive reactance, the axial magnetic flux, the surface current density and the temperature of the conductor were found. The ac to dc resistance ratio was found to increase with increasing current and increasing frequency. The surface current density decreased with increasing current and increasing frequency. All these variations can be attributed to the transformer effect, resulting from the presence of the steel core and the spiralling of the layer currents, and the increase of magnetic power loss.

关键词： ACSR AC RESISTANCE CONDUCTORS FREQUENCY EFFECTS INTERNAL INDUCTANCE RESISTANCE RATIO

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STRAINED-INSULATOR INXAL1-XAS/N+-IN0.53GA0.47AS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

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IEEE TRANSACTIONS ON ELECTRON DEVICES 1991年第9期38卷 1986-1992页

作者： BAHL, SR AZZAM, WJ DELALAMO, JA Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge MA USA Department of Applied Physics University of Stanford Stanford CA USA

In an effort to enhance the conduction band discontinuity between channel and insulator, In(x)Al1-xAs/n+-In0.53Ga0.47 As HFET's have been fabricated with InAs mole fractions in the In(x)Al1-xAs gate insulator of x = 0.52 (lattice matching), 0.48, 0.40, and 0.30. We have experimentally found that decreasing the InAs mole fraction in the insulator results in reduced forward- and reverse-bias gate currents, increased reverse gate breakdown voltage, and reduced real-space transfer of hot electrons from channel to gate. We have found that down to x = 0.40, these inprovements trade off with a slightly reduced transconductance, but the gain in gate bias swing results in an increase in maximum current drivability. From x = 0.40 to x = 0.30, there is a drastic decrease in transconductance, coincident with a high density of MISFIT dislocations. Wide-bandgap In(x)Al1-xAs insulator HFET's with x almost-equal-to 0.40 show promise for power microwave applications.

关键词： Insulation HEMTs MODFETs Gallium arsenide FETs Electrons Transconductance Voltage Indium compounds Lattices

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A submillimeter-wave planar diode mixer-design and evaluation

A submillimeter-wave planar diode mixer-design and evaluatio...

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Microwave, MTT-S International Symposium

作者： T. Newman K.T. Ng Department of Electrical Engineering Applied Electro Physics Laboratory University of Virginia Charlottesville VA USA Department of Electrical and Computer Engineering New Mexico State University Las Cruces NM USA

A 345-GHz mixer using a planar GaAs Schottky diode has been designed and tested. The design process used nonlinear and linear numerical mixer analysis as well as scale-model impedance measurements. Using a planar diode eliminates the disadvantages of mechanical instability and labor-intensive assembly associated with conventional whisker-contacted diodes. Test results indicate performance on the same level as that of the best whisker-contacted room-temperature mixers for submillimeter wavelengths.< >

关键词： Schottky diodes Gallium arsenide Microstrip Testing Submillimeter wave integrated circuits Submillimeter wave technology Submillimeter wave circuits Chemicals Temperature Impedance

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