We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a m...
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We introduce a recently developed general computational model for the electromagnetic simulations of complex atomic, molecular, or semiconductor media using the finite difference time domain (FDTD) method based on a multi-level multi-electron (MLME) system. We show how this MLME-FDTD model can be used for spatial-temporal simulation of a wide range of active optoelectronic and plasmonic devices. Realistic simulations ranging from semiconductor lasers, to plasmonic lasers, and semiconductor optical amplifiers are illustrated.
A dream of humanoid robot researchers is to develop a complete "human-like" (whatever that means) artificial agent both in terms of body and brain. We now have seen an increasing number of humanoid robots (s...
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Vertical optical mode-size transformation from 260nm-thick Si-nanowaveguide to 10~12μm matching the single-mode-fibre-core has been demonstrated using compact multilayer Si/SiO 2 asymmetric GRIN lens (length:~24μm)...
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ISBN:
(纸本)9781557528896
Vertical optical mode-size transformation from 260nm-thick Si-nanowaveguide to 10~12μm matching the single-mode-fibre-core has been demonstrated using compact multilayer Si/SiO 2 asymmetric GRIN lens (length:~24μm). GRIN lens to single-mode-fibre practical coupling loss of -3.45 dB was achieved.
Accurate location of buried utilities is crucial if trenchless technologies are to fulfil their potential in urban areas, as inaccuracy adds risk to the design and hence cost. For techniques such as horizontal directi...
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ISBN:
(纸本)9781617821899
Accurate location of buried utilities is crucial if trenchless technologies are to fulfil their potential in urban areas, as inaccuracy adds risk to the design and hence cost. For techniques such as horizontal direction drilling, this increased risk could mean that new services have to be installed deeper than is really desired and this can lead to maintenance issues for this service in the future. The Mapping the Underworld: Location Phase 2 (MTU2) research project in the UK is a multi-university, multi-disciplinary project with support from 40+ partner companies and organisations. This second phase aims to produce a multi-sensor device for the improved location of buried utilities. This paper describes the latest research into the several sensor technologies that will be incorporated into the device, including ground penetrating radar, vibro-acoustics, low frequency electromagnetic and magnetic fields. It also reports on how the project is fusing the data from these sensors with current network records to produce enhanced information on the location of the buried utilities. The paper also describes the research investigating the issues of 'seeing' through the ground, and using ground condition information within a knowledge based system to aid tuning and use of the location device in the field.
This paper represents a technique, applying user action patterns in order to distinguish between users and identify them. In this method, users' actions sequences are mapped to numerical sequences and each user...
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Intrusion detection datasets play a key role in fine tuning Intrusion Detection Systems (IDSs). Using such datasets one can distinguish between regular and anomalous behavior of a given node in the network. To build t...
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We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-leve...
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ISBN:
(纸本)9781557528896
We discuss the regime where nano-ring laser is feasible in which the absorption loss in metal is compensated by semiconductor gain. A nanometre-scale electrically pumped ring laser design is simulated using multi-level multi-electron FDTD model.
We report the first demonstration of phase change memory cells utilizing nickel monosilicide (NiSi) or platinum monosilicide (PtSi) as the bottom electrode or heater material. This work enables the integration of PCRA...
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We report the first demonstration of phase change memory cells utilizing nickel monosilicide (NiSi) or platinum monosilicide (PtSi) as the bottom electrode or heater material. This work enables the integration of PCRAM directly on the silicided drain regions of MOSFETs, allowing compact integration with reduced process complexity and cost. Low reset current of 0.8 mA was achieved for contact dimensions of ~ 1 μm. electrical and simulation results demonstrate the feasibility of employing silicides as a bottom electrode/heater in a PCRAM.
In this work, a highly compressive DLC liner (~ 6 GPa) was applied on AlGaN/GaN MOS-HEMTs for the first time. The compressive stress induced by DLC liner effectively reduces the tensile stress in the AlGaN layer, thus...
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In this work, a highly compressive DLC liner (~ 6 GPa) was applied on AlGaN/GaN MOS-HEMTs for the first time. The compressive stress induced by DLC liner effectively reduces the tensile stress in the AlGaN layer, thus reducing the 2-DEG density. Devices with DLC show 22 % and 19% increase in drive current and peak transconductance, respectively, at V G = 2 V and V D = 10 V. Threshold voltage reduction of ~ 1 V was also observed for devices with DLC liner, as compared to ones without DLC liner. Devices in this work were also integrated with in situ silane (SiH 4 ) passivation technology.
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