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Photonic Heat Engines: science and Applications VII 2025

作者： Chen, Chun-Wei Balliu, Enkeleda Meehan, Bailey Hawkins, Thomas W. Ballato, John Dragic, Peter D. Boilard, Tommy Bernier, Martin Digonnet, Michel J.F. Edward L. Ginzton Laboratory Stanford University StanfordCA94305 United States Cobolt AB HÜBNER Photonics Solna171 54 Sweden Department of Materials Science and Engineering Clemson University SC United States Department of Electrical Computer Engineering University of Illinois at Urbana-Champaign IL United States Université Laval Québec Canada

ISBN: (数字)9781510685079

ISBN: (纸本)9781510685062

Waste heat in fiber lasers poses major challenges in frequency, power, and pointing stabilities, as well as beam quality and power scaling. Using anti-Stokes-fluorescence cooling, we developed a radiation-balanced Yb-doped silica fiber amplifier with a novel aluminophosphosilicate core-glass composition that delivers 575 mW with no net internal heat generation by amplifying a 0.9-mW seed at 1064 nm (28.0 dB of gain). With a lower seed power (0.4 mW), a radiation-balanced gain of 31.5 dB was achieved. We discuss the strategies and recent progress in silicate-glass engineering that enabled this breakthrough performance in a small-core fiber at atmospheric pressure, as well as the potential for power-scaling radiation-balanced fiber lasers to the 100-watt level through advanced fiber designs. Our findings point to a promising path for stable high-power operation free from thermal limitations. © 2025 SPIE.

关键词： Laser cooling

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Robust Flower Cluster Matching Using The Unscented Transform

arXiv

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arXiv 2025年

作者： Chu, Andy Shrestha, Rashik Gu, Yu Gross, Jason N. Department of Mechanical Materials and Aerospace Engineering West Virginia University Morgantown United States Lane Department of Computer Science and Electrical Engineering West Virginia University Morgantown United States

Monitoring flowers over time is essential for precision robotic pollination in agriculture. To accomplish this, a continuous spatial-temporal observation of plant growth can be done using stationary RGB-D cameras. However, image registration becomes a serious challenge due to changes in the visual appearance of the plant caused by the pollination process and occlusions from growth and camera angles. Plants flower in a manner that produces distinct clusters on branches. This paper presents a method for matching flower clusters using descriptors generated from RGB-D data and considers allowing for spatial uncertainty within the cluster. The proposed approach leverages the Unscented Transform to efficiently estimate plant descriptor uncertainty tolerances, enabling a robust image-registration process despite temporal changes. The Unscented Transform is used to handle the nonlinear transformations by propagating the uncertainty of flower positions to determine the variations in the descriptor domain. A Monte Carlo simulation is used to validate the Unscented Transform results, confirming our method’s effectiveness for flower cluster matching. Therefore, it can facilitate improved robotics pollination in dynamic environments. Copyright © 2025, The Authors. All rights reserved.

关键词： Image registration

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Radiation-Resilient Amorphous Indium Oxide FEFETs for Embedded Nonvolatile Memory

Radiation-Resilient Amorphous Indium Oxide FEFETs for Embedd...

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Annual International Symposium on Reliability Physics

作者： Sharadindu Gopal Kirtania Faaiq G. Waqar Dyutimoy Chakraborty Jaewon Shin E. Sarkar Justin Reiss Jason Dean Yeager Douglas E. Wolfe Shimeng Yu Suman Datta School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta Georgia USA Department of Materials Science and Engineering Pennsylvania State University State College Pennsylvania USA

ISBN: (数字)9798331504779

ISBN: (纸本)9798331504786

We report the first-ever study on the radiation resilience of a back-end-of-line (BEOL) compatible W-doped Indium Oxide (IWO) ferroelectric field-effect transistor (FEFET) under neutron irradiation. The findings demonstrate remarkable resilience of both Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric capacitors (FECAPs) and IWO FEFETs to neutron irradiation. Subjected to neutron irradiation at fluences up to 10 15 n/cm 2 , HZO FECAPs maintain stable remnant polarization (2P r ) and coercive voltage (2V c ) up to 10 11 cycles without any breakdown. The IWO FEFETs show robust switching performance and exhibit minimal degradation in memory window (MW) and read current window (CW). Importantly, the retention and endurance performance remain stable after neutron radiation exposure, without significant failure. Destiny simulations were performed to assess the impact of radiation on the system-level performance of an 8 MB 1T-1FEFET-based embedded RAM at the 32 nm node. The results showed negligible effects on read latency and only a minor 0.36% increase in dynamic read energy at a neutron fluence of 10y15 n/cm 2 . The combination of high performance, non-volatility, and radiation hardness makes IWO FEFETs a promising candidate for high-density, persistent memory applications in radiation-rich environments.

关键词： Degradation Radiation effects Nonvolatile memory Random access memory Neutrons Indium Transistors FeFETs Resilience Switching circuits

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electrical and structural Properties of in-situ MOCVD Grown Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1-x)2O3 MOSCAPs

arXiv

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arXiv 2025年

作者： Bhuiyan, A.F.M. Anhar Uddin Meng, Lingyu Yu, Dong Su Dhara, Sushovan Huang, Hsien-Lien Vangipuram, Vijay Gopal Thirupakuzi Hwang, Jinwoo Rajan, Siddharth Zhao, Hongping Department of Electrical and Computer Engineering The Ohio State University ColumbusOH43210 United States Department of Materials Science and Engineering The Ohio State University ColumbusOH43210 United States Department of Electrical and Computer Engineering University of Massachusetts Lowell LowellMA01854 United States

In this study, we investigated the electrical and structural properties of metal-oxide-semiconductor capacitors (MOSCAPs) with in-situ metal-organic chemical vapor deposition (MOCVD)-grown Al2O3 dielectrics deposited at varying temperatures on (010) β-Ga2O3 and β-(AlxGa1-x)2O3 films with different Al compositions. The Al2O3/β-Ga2O3 MOSCAPs demonstrated a significant impact of Al2O3 deposition temperature on their electrical properties as characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements. Higher deposition temperatures (900 °C) resulted in reduced voltage hysteresis (~0.3 V) and improved reverse breakdown voltage of 74.5 V with a corresponding parallel-plate electric field of EBr, Al2O3 = 5.01 MV/cm and EBr, Ga2O3 = 4.11 MV/cm under reverse bias. In contrast, lower deposition temperatures (650 °C) yielded higher voltage hysteresis (~3.44 V) and lower reverse breakdown voltage (VBr = 38.8 V with EBr, Al2O3 = 3.69 MV/cm and EBr, Ga2O3 = 2.87 MV/cm), but exhibited superior forward breakdown fields, increasing from 5.62 MV/cm at 900 °C to 7.25 MV/cm at 650 °C. High-resolution scanning transmission electron microscopy (STEM) imaging revealed a strong correlation between the deposition temperature of Al2O3 and its crystallinity. At 900 °C, Al2O3 exhibited larger crystalline regions and sharper interfaces as compared to 650 °C, contributing to improved reverse breakdown fields. For Al2O3/β-(AlxGa1-x)2O3 MOSCAPs, increasing Al composition from x = 5.5% to x = 9.2% resulted in a reduction in net carrier concentration with enhanced reverse breakdown fields, from EBr, (AlxGa1-x)2O3 = 2.55 MV/cm to 2.90 MV/cm. The reverse breakdown electric field in the Al2O3 dielectric also increased from EBr, Al2O3 = 2.41 MV/cm to 3.13 MV/cm as the Al composition increases from 5.5% to 9.2%. Forward breakdown fields of the Al2O3/β-(AlxGa1-x)2O3 MOSCAPs increased from EBr, Al2O3 = 5 MV/cm to 5.4 MV/cm with the increase of Al composition from 5.5% to 9.2%, respect

关键词： Oxide semiconductors

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Integrating Sustainability and Industry 4.0: A Framework for Sustainable Logistics 4.0

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Circular Economy and Sustainability 2025年 1-39页

作者： Di Nardo, Mario Gallab, Maryam Murino, Teresa Wu, Jing Pandey, Shatrudhan Facoltàdi Ingegneria Università Telematica Pegaso Rome 00186 Italy MIS-LISTD Laboratory Computer Science Department Mines-Rabat School (ENSMR) Rabat 10000 Morocco Department of Chemical Materials and Industrial Production Engineering University of Naples “Federico II” Naples Italy Department of Electrical and Photonics Engineering Technical University of Denmark Kgs. Lyngby 2800 Denmark Marwadi University Research Center Faculty of Management Studies Marwadi University Gujarat Rajkot 360003 India

As society becomes more aware of environmental and social issues, supply chain stakeholders increasingly consider these factors alongside efficiency, cost, and time. The logistics industry must adapt by integrating Industry 4.0 technologies and sustainability practices. Sustainable Logistics 4.0, though nascent, is gaining traction for enhancing sustainability through digital interventions. This study conducted a comprehensive literature review and bibliometric network analysis using data extracted from the Scopus and Google Scholar databases, covering the period from 2013 to 2023, focusing on the integration of sustainability, Industry 4.0, and logistics. Noting a gap in conceptual frameworks, the paper performs a SWOT analysis to identify key factors and proposes a framework for digitalizing sustainable logistics and addressing emerging challenges. © The Author(s), under exclusive licence to Springer Nature Switzerland AG 2025.

关键词： Circular Economy Industry 4.0 Logistics Sustainability TBL

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Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800 v and 4500 v SiC Power MOSFETs

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IEEE Transactions on Nuclear science 2025年

作者： Sengupta, A. Martinella, C. Ball, D.R. Niskanen, K. Senarath, A.S. Islam, S. Harris, P.M. Hutson, J.M. Osheroff, J.M. Sternberg, A.L. Kettunen, H. Kosier, S.L. Grossner, U. Javanainen, A. Galloway, K.F. Schrimpf, R.D. Witulski, A.F. Zürich8092 Switzerland Vanderbilt University Interdisciplinary Materials Science Program NashvilleTN37235 United States Lipscomb University Electrical and Computer Engineering Department NashvilleTN37204 United States NASA/GSFC Code 561.4 GreenbeltMD20771 United States Vanderbilt University Electrical Engineering and Computer Science Department B 351825 NashvilleTN37235 United States University of Jyväskylä Department of Physics Jyväskylä40014 Finland

Experimental heavy-ion responses of two variants of SiC power MOSFETs are evaluated. The devices have similar epitaxial thickness but different doping. The higher doping in the epitaxial region results in lower breakdown voltage, and typically leads to a lower threshold drain voltage at which single-event leakage current (SELC) occurs. Furthermore, the heavy-ion-induced SELC degradation in the drain and gate currents of the SiC MOSFETs exhibit a strong dependence on the heavy-ion's angle of incidence. The devices' behavior significantly alters when irradiated with heavy-ions at different incident angles under the same fixed bias and total fluence, as also confirmed by 3-D Technology computer Aided Design (TCAD) simulations. © 1963-2012 IEEE.

关键词： Power MOSFET

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Periodic phase diagrams in micromagnetics with an eigenvalue solver

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IEEE Transactions on Magnetics 2025年

作者： Ai, Fangzhou Lin, Zhuonan Duan, Jiawei Lomakin, Vitaliy University of California Department of Electrical and Computer Engineering San DiegoCA92093 United States University of California Center for Memory and Recording Research San DiegoCA92093 United States University of California Program in Materials Science and Engineering San Diego92093 United States

This work introduces an approach to compute periodic phase diagram of micromagnetic systems by solving a periodic linearized Landau-Lifshitz-Gilbert (LLG) equation using an eigenvalue solver with the Finite Element Method formalism. The linear operator in the eigenvalue problem is defined as a function of the periodic phase-shift wave vector. The dispersion diagrams are obtained by solving the eigenvalue problem for complex eigenfrequencies and corresponding eigenstates for a range of prescribed wave vectors. The presented approach incorporates a calculation of the periodic effective field, including the exchange and magnetostatic field components. The approach is general in that it allows 3D problems to be handled with any 1D, 2D, and 3D periodicities. The ability to calculate periodic diagrams provides insights into the spin wave propagation and localized resonances in complex micromagnetic structures. © 1965-2012 IEEE.

关键词： Spin waves

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Initial Work on Ultrafast Photoluminescent Surface Heating Optical Thermometry (UP-SHOT)

Initial Work on Ultrafast Photoluminescent Surface Heating O...

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AIAA science and Technology Forum and Exposition, AIAA SciTech Forum 2025

作者： Collins, Noelle M. Klesko, Joseph P. Brener, Igal Norden, Tenzin McClintock, Luke M. Padmanabhan, Prashant Feezell, Daniel Winters, Caroline A. Materials Science Non-destructive Evaluation and Development Sandia National Laboratories AlbuquerqueNM United States Materials Science Thin Films and Packaging Sandia National Laboratories AlbuquerqueNM United States Optical Engineering Microsystems Engineering Science and Applications Sandia National Laboratories AlbuquerqueNM United States Center for Integrated Nanotechnologies Los Alamos National Laboratory Los AlamosNM United States Department of Electrical and Computer Engineering University of New Mexico AlbuquerqueNM United States Sandia National Laboratories AlbuquerqueNM United States

ISBN: (纸本)9781624107238

Ultrafast (GHz) thermometry requires considerations of signal-to-noise, heat conduction, and temperature sensitivity. Ultrafast Photoluminescent Surface Heating Optical Thermometry (UP-SHOT) exploits the subnanosecond excitonic response of zinc oxide. Time-resolved photoluminescence is presented and discussed. © 2025, American Institute of Aeronautics and Astronautics Inc, AIAA. All rights reserved.

关键词： Heat conduction

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Development of open-architecture two-wavelength grayscale digital light processing for advanced vat photopolymerization

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Additive Manufacturing 2025年 107卷

作者： Zhang, Heyang Maier, Abby Mathews, Melvin Hu, Jingtong Zhao, Xiayun Department of Mechanical Engineering and Materials Science University of Pittsburgh PittsburghPA United States Department of Electrical and Computer Engineering University of Pittsburgh PittsburghPA United States Engineering Quantum Systems Massachusetts Institute of Technology CambridgeMA United States

Vat photopolymerization (VPP) is an additive manufacturing technique that creates 3D parts by projecting 2D images onto layers of photopolymer resin. These images are often delivered using digital light processing (DLP) systems with digital micromirror devices. While conventional VPP relies on a single-wavelength DLP system, recent advancements have introduced multi-wavelength approaches to selectively trigger distinct photochemical reactions, enhancing multi-material printing and geometric precision. To further advance multi-wavelength VPP, open-architecture two-wavelength DLP systems are essential for enabling real-time control with adaptive exposure masks. In this work, we develop an orthogonal two-wavelength grayscale DLP system featuring custom optics and a reconfigured field-programmable gate array (FPGA)-based control circuit. The system integrates a 50/50 beam-splitting optical architecture that merges 365 nm and 460 nm light sources, ensuring minimal distortion and precise alignment. A high-resolution CMOS camera and power meter are used to quantify the accuracy and alignment of the two-wavelength exposure masks. A workflow for projection alignment and calibration, grayscale image generation, compensation, and bit-stream data transmission via FPGA programming is established, enabling high-resolution, precisely aligned, and spatially accurate two-wavelength grayscale intensity projections onto the build platform. The system's performance is validated through ray-tracing simulations, optical characterizations, and experimental sample printing. The developed architecture facilitates integration with mechanized platforms, metrology tools, and process control technologies, providing a robust foundation for reproducible and precise two-wavelength VPP. The elaborate methodologies of optics design, FPGA programming, and image processing advance both existing and emerging multi-wavelength VPP technologies, enhancing their capability for complex material systems and

关键词： Ray tracing

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Near-half-metallic state in the half-Heusler PtMnSb film on a III-V substrate

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Physical Review materials 2025年第4期9卷 044403-044403页

作者： Shinichi Nishihaya Malcolm J. A. Jardine Hadass S. Inbar Aranya Goswami Jason T. Dong Aaron N. Engel Yu-Hao Chang Connor P. Dempsey Makoto Hashimoto Department of Electrical and Computer Engineering University of California Santa Barbara Santa Barbara California 93106 USA Present Address: Department of Physics Institute of Science Tokyo Tokyo 152-8551 Japan. Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 USA Materials Department University of California Santa Barbara Santa Barbara California 93106 USA Present Address: Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA. Stanford Synchrotron Radiation Lightsource SLAC National Accelerator Laboratory 2575 Sand Hill Road Menlo Park California 94025 USA

The interplay between half-metallic ferromagnetism and spin-orbit coupling within the inversion-symmetry-broken structure of half-Heuslers provides an ideal platform for various spintronics functionalities. Taking advantage of good lattice matching, it is highly desired to epitaxially integrate promising Heuslers into III-V semiconductor-based devices. PtMnSb is one of the first half-Heuslers predicted to be an above-room-temperature half-metal with large spin orbit coupling, however, its half-metallicity and potential as a spintronics material has remained elusive due to lack of high quality samples. Here we demonstrate epitaxial growth of single crystal PtMnSb(001) film on GaSb(001) substrates using molecular beam epitaxy. Direct observation of the band structure via angle-resolved photoemission spectroscopy and many-body perturbation theory within the quasi-particle self-consistent GW approximation (QPGW) reveals that PtMnSb hosts rather a near-half-metallic state with both spin bands crossing the Fermi level and with high spin polarization over 90%. Temperature dependence of magnetization also shows an anomalous enhancement below 60 K, which can be associated with the development of such a near-half-metallic state at low temperatures. Epitaxial growth of high-crystalline PtMnSb on a III-V paves the way for systematic clarification of its spin transport properties with fine-tuning of strain in heterostructure devices.

关键词： Molecular beam epitaxy

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