Human-robot teaming has become increasingly important with the advent of intelligent machines. Prior efforts suggest that performance, mental workload, and trust are critical elements of human-robot dynamics that can ...
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The conventional computing architecture faces substantial chal-lenges,including high latency and energy consumption between memory and processing *** response,in-memory computing has emerged as a promising alternative...
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The conventional computing architecture faces substantial chal-lenges,including high latency and energy consumption between memory and processing *** response,in-memory computing has emerged as a promising alternative architecture,enabling computing operations within memory arrays to overcome these *** devices have gained significant attention as key components for in-memory computing due to their high-density arrays,rapid response times,and ability to emulate biological *** these devices,two-dimensional(2D)material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing,thanks to their exceptional performance driven by the unique properties of 2D materials,such as layered structures,mechanical flexibility,and the capability to form *** review delves into the state-of-the-art research on 2D material-based memristive arrays,encompassing critical aspects such as material selection,device perfor-mance metrics,array structures,and potential ***,it provides a comprehensive overview of the current challenges and limitations associated with these arrays,along with potential *** primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing,leveraging the potential of 2D material-based memristive devices.
We report Ge23Sb7S70 chalcogenide ring resonators with up to 8 × 104 quality factors operating around 3.6 µm wavelength fabricated through e-beam lithography. Their rib waveguide geometry can be engineered t...
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Cherenkov radiation(CR)is available for a wide variety of terahertz(THz)radiation sources,but its efficiency is deeply affected by intrinsic *** find that if the tilted angle(α)of anisotropic material and radiation a...
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Cherenkov radiation(CR)is available for a wide variety of terahertz(THz)radiation sources,but its efficiency is deeply affected by intrinsic *** find that if the tilted angle(α)of anisotropic material and radiation angle(θ)meet the condition ofθ+α=π/2,the intensity of radiation fields for the charged particle bunch(CPB)moving from left to right cannot be influenced by intrinsic losses,which means long-distance radiation can be ***,we observe an asymmetric CR when the CPB moves from the opposite *** addition,we select natural van der Waals(vd W)materialα-MoO3as an example,further confirming that the radiation field can reach the far field and the asymmetric CR radiation can also be *** wonderful properties with long-distance radiation will extend the application of CR to a certain extent for future design and fabrication.
We report Ge23Sb7S70 chalcogenide ring resonators with up to 8 × 104 quality factors operating around 3.6 µm wavelength fabricated through e-beam lithography. Their rib waveguide geometry can be engineered t...
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We demonstrate a unidirectional ring hybrid diode laser based on integration of a hook-shaped traveling-wave semiconductor optical amplifier (SOA) and Taiji ring resonator. The additional crossover bending waveguide i...
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MXene-based films have been intensively explored for construction of piezoresistive flexible pressure sensors owing to their excellent mechanical and electrical *** pressure sensitivity relies on pre-molding a flexibl...
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MXene-based films have been intensively explored for construction of piezoresistive flexible pressure sensors owing to their excellent mechanical and electrical *** pressure sensitivity relies on pre-molding a flexible substrate,or regulating the micromorphology of MXene sheets,to obtain a micro-structured ***,the two avenues usually require complicated and time-consuming microfabrication or wet chemical processing,and are limited to non-adjustable topographicelectrical(topo-electro)***,we propose a lithographic printing inspired in-situ transfer(LIPIT)strategy to fabricate MXene-ink films(MIFs).In LIPIT,MIFs not only inherit ridge-and-valley microstructure from paper substrate,but also achieve localized topo-electro tunability by programming ink-writing patterns and *** MIF-based flexible pressure sensor with periodical topo-electro gradient exhibits remarkably boosted sensitivity in a wide sensing range(low detection limit of 0.29 Pa and working range of 100 kPa).The MIF sensor demonstrates versatile applicability in both subtle and vigorous pressuresensing fields,ranging from pulse wave extraction and machine learning-assisted surface texture recognition to piano-training glove(PT-glove)for piano *** LIPIT is quick,low-cost,and compatible with free ink/substrate combinations,which promises a versatile toolbox for designing functional MXene films with tailored morphological-mechanical-electrical properties for extended application scenarios.
Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction *** this study,we demonstrate graphene(Gr)-bridge...
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Two-dimensional van der Waals(2D vdW)material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction *** this study,we demonstrate graphene(Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors(FET).Unlike conventional FET operation,our Gr-bridge devices exhibit nonclassical transfer characteristics(humped transfer curve),thus possessing a negative differential *** phenomena are interpreted as the operating behavior in two series-connected FETs,and they result from the gate-tunable contact capacity of the Gr-bridge ***-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow-and wide-bandgap materials as more advanced circuit applications based on non-classical transfer ***,we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.
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