Although quantum-dot light-emitting diodes(QLEDs)can exhibit high efficiency and long lifetime,the realization of QLEDs-based displays remains challenging due to their complex multilayer architectures and the use of u...
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Although quantum-dot light-emitting diodes(QLEDs)can exhibit high efficiency and long lifetime,the realization of QLEDs-based displays remains challenging due to their complex multilayer architectures and the use of unstable poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)hole injection layer(HIL).Here,we develop a novel trilayer p-type/intrinsic/n-type(PIN)QLED with only three functional layers:PTAA:TFB:F4-TCNQ(PTAA:poly[bis(4-phenyl)(2,4,6-trimethyl-phenyl)amine];TFB:poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)];F4-TCNQ:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane)bulk-heterojunction(BHJ)hole transport layer(HTL),quantum-dot emiting layer,and ZnMgO electron transport *** to well-matched energy level,increased hole transport path from PTAA to TFB,and improved hole density and enhanced hole mobility of the PTAA:TFB:F4-TCNQ BHJ HTL,the resultant trilayer PIN QLED exhibits a high external quantum efficiency(EQE)of 25.1%and an impressive peak brightness of 382,600 cd/m^(2),which are significantly higher than those of the control ***,the trilayer PIN QLED also shows a 1.94-fold longer operational lifetime than control QLED due to the improved device performance,reduced charge accumulation,and removal of unstable PEDOT:*** developed trilayer PIN QLED,with fewer functional layers and better stability,could promote the practical application of QLED in displays and solid-state lighting.
CsSnI3 is widely studied as an environmentally friendly Pb-free perovskite material for optoelectronic device applications. To further improve material and device performance, it is important to understand the surface...
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CsSnI3 is widely studied as an environmentally friendly Pb-free perovskite material for optoelectronic device applications. To further improve material and device performance, it is important to understand the surface structures of CsSnI3. We generate surface structures with various stoichiometries, perform density functional theory calculations to create phase diagrams of the CsSnI3 (001), (110), and (100) surfaces, and determine the most stable surfaces under a wide range of Cs, Sn, and I chemical potentials. Under I-rich conditions, surfaces with Cs vacancies are stable, which lead to partially occupied surface states above the valence band maximum. Under I-poor conditions, we find the stoichiometric (100) surface to be stable under a wide region of the phase diagram, which does not have any surface states and can contribute to long charge-carrier lifetimes. Consequently, the I-poor (Sn-rich) conditions will be more beneficial to improve the device performance.
This work presents an accelerator that performs blind deblurring based on the dark channel prior. The alternating minimization algorithm is leveraged for latent image and blur kernel estimation. A 2-D Laplace equation...
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Network Intrusion Detection System (NIDS) serves as a essential component in data protection by monitoring computer networks for threats that can bypass conventional defenses such as malware and hackers. Deep learning...
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The extensive exploration of energy conversion harvested from the environment into electricity is recently driven by the significant demand to power off-grid electronics,particularly Internet-of-Things(IoT)*** highlig...
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The extensive exploration of energy conversion harvested from the environment into electricity is recently driven by the significant demand to power off-grid electronics,particularly Internet-of-Things(IoT)*** highlight previews the latest advance of a charging-free thermally regenerative electrochemical cycle(TREC)for continuous electricity generation from solar heat and darkness with the aid of dual-mode thermal *** a spontaneous all-day electricity generation with high power and efficiency shows great potential for powering a wide range of distributed electronics for IoT and other applications.
Femoral stem hip prostheses and plates for long bone fractures play a vital role in restoring the functionality of the patients. One of the key factors that can determine the positive result of restoring their mobilit...
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AI and reinforcement learning (RL) have attracted great attention in the study of multiplayer systems over the past decade. Despite the advances, most of the studies are focused on synchronized decision-making to atta...
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A technique for embedding fibres with semiconductor devices produces defect-free strands that are hundreds of metres long. Garments woven with these threads offer a tantalizing glimpse of the wearable electronics of t...
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A technique for embedding fibres with semiconductor devices produces defect-free strands that are hundreds of metres long. Garments woven with these threads offer a tantalizing glimpse of the wearable electronics of the future.
By creating multipath backscatter links and amplify signal strength, reconfigurable intelligent surfaces (RIS) and decode-and-forward (DF) relaying are shown to degrade the latency of the ultrareliable low-latency com...
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Given the severity of waste pollution as a major environmental concern, intelligent and sustainable waste management is becoming increasingly crucial in both developed and developing countries. The material compositio...
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