检索结果-内蒙古大学图书馆

Oxide-Based materials and Devices XII 2021

作者： De Santi, C. Fabris, E. Caria, A. Buffolo, M. Li, W. Nomoto, K. Hu, Z. Jena, D. Xing, H.G. Meneghesso, G. Zanoni, E. Meneghini, M. Department of Information Engineering University of Padova Padova35131 Italy School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States Department of Materials Science and Engineering School of Electrical and Computer Engineering Kavli Institute at Cornell for Nanoscience Cornell University IthacaNY14853 United States

ISBN: (纸本)9781510642096

In this paper, we analyze the threshold voltage stability of beta-Ga2O3FinFETs for power applications using Al2O3 as gate insulator. In dynamic characterization measurements, when the filling bias condition is moved from off-state to on-state a positive threshold voltage shift is induced, caused by the trapping of electrons in the insulator or at the insulator interface with the semiconductor. The threshold voltage variation was found to be stable in rest condition, but illumination by 280 nm UV light was able to slowly recover the threshold voltage even below its value before the filling condition was applied, suggesting the presence of natively trapped charge into the oxide even in the as-grown device. In order to obtain more information on the role of the external illumination, monochromatic excitation in the range from 1.5 eV to 5 eV was applied to the device before a transfer characteristic measurement. Results show that photon energies lower than 2.2 eV cause a positive threshold voltage shift, caused by charge trapping during the measurement phase and not related to illumination. Photon energies between 2.2 eV and 3.5 eV promote electron detrapping, leading to a partial recovery in the threshold voltage. Finally, energies above 3.5 eV cause an additional charge trapping process. The physical origin of the photon energy difference was investigated by monochromatic light-induced current transients, and a suitable model considering the conduction band discontinuities between the gate metal and the oxide and between the oxide and the semiconductor was developed to explain the experimental data. © 2021 SPIE. All rights reserved.

关键词： Charge trapping

来源：评论

学校读者我要写书评

暂无评论

Predicting Mechanical Properties of Carbon Nanotube (CNT) Images Using Multi-Layer Synthetic Finite Element Model Simulations

Predicting Mechanical Properties of Carbon Nanotube (CNT) Im...

引用

IEEE International Conference on Image Processing

作者： Kaveh Safavigerdini Koundinya Nouduri Ramakrishna Surya Andrew Reinhard Zach Quinlan Filiz Bunyak Matthew R. Maschmann Kannappan Palaniappan Department of Electrical Engineering and Computer Science University of Missouri-Columbia Columbia Missouri USA Department of Mechanical & Aerospace Engineering University of Missouri-Columbia Columbia Missouri USA MU Materials Science and Engineering Institute University of Missouri-Columbia Columbia Missouri USA

We present a pipeline for predicting mechanical properties of vertically-oriented carbon nanotube (CNT) forest images using a deep learning model for artificial intelligence (AI)-based materials discovery. Our approach incorporates an innovative data augmentation technique that involves the use of multi-layer synthetic (MLS) or quasi-2.5D images which are generated by blending 2D synthetic images. The MLS images more closely resemble 3D synthetic and real scanning electron microscopy (SEM) images of CNTs but without the computational cost of performing expensive 3D simulations or experiments. Mechanical properties such as stiffness and buckling load for the MLS images are estimated using a physics-based model. The proposed deep learning architecture, CNTNeXt, builds upon our previous CNTNet neural network, using a ResNeXt feature representation followed by random forest regression estimator. Our machine learning approach for predicting CNT physical properties by utilizing a blended set of synthetic images is expected to outperform single synthetic image-based learning when it comes to predicting mechanical properties of real scanning electron microscopy images. This has the potential to accelerate understanding and control of CNT forest self-assembly for diverse applications.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Impact of Quantum Well Thickness on Efficiency Loss in InGaN/GaN LEDs: Challenges for Thin-Well Designs

arXiv

引用

arXiv 2025年

作者： Li, Xuefeng Pant, Nick Rahman, Sheikh Ifatur Armitage, Rob Rajan, Siddharth Kioupakis, Emmanouil Feezell, Daniel University of New Mexico AlbuquerqueNM87106 United States Department of Materials Science & Engineering University of Michigan Ann ArborMI48109 United States Applied Physics Program University of Michigan Ann ArborMI48109 United States Department of Electrical and Computer Engineering The Ohio State University ColumbusOH43210 United States Lumileds LLC San JoseCA95131 United States Department of Materials Science and Engineering The Ohio State University ColumbusOH43210 United States

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs. current density relationship, phase space filling (PSF), quantum confined stark effect (QCSE), and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for quantum wells having constant In composition. Despite better control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance of enhancement effects on the radiative and intrinsic Auger-Meitner recombination coefficients. The imbalance of enhancement effects results in a decline in internal quantum efficiency (IQE) and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. We also investigate how LED modulation bandwidth varies with quantum well thickness, identifying the key trends and their implications for device performance. Copyright © 2025, The Authors. All rights reserved.

关键词： Semiconductor quantum wells

来源：评论

学校读者我要写书评

暂无评论

Machine Learning for Fatigue Estimation and Prediction "An Introduction Study" 7th

Machine Learning for Fatigue Estimation and Prediction "An I...

引用

7th International Conference on Advancements of Medicine and Health Care through Technology, MEDITECH 2020

作者： Aljihmani, Lilia Ursutiu, Doru Cornel, Samoila Qaraqe, Khalid Department of Electrical and Computer Engineering Texas A&M University at Qatar Doha23874 Qatar Department of Electronics and Computers Transylvania University of Brasov Braşov500036 Romania Department of Materials Science Transylvania University of Brasov Braşov500036 Romania

ISBN: (纸本)9783030935634

Fatigue is considered as reduced workability and motivation that affects physical, emotional, and mental activeness. It is a critical concern that influences the precision and accurate implementation of some tasks or the emotional condition. Early detection of fatigue onset is crucial, such that preventative or corrective controls may be presented to minimize work-related traumas, the inexact performance of a task that require high-level accuracy, as well as to avoid making a wrong decision as a result of tiredness. Our goal is to create a non-invasive, proactive model for real-time fatigue estimation based on typical features as tremor, heart rate, and blood oxygen saturation. We expect to set up a relation among the handshaking, heart rate, and oxygen level on one side and the weariness onset on the other. We will use a compact high-precision accelerometer to capture the low-frequency physiological tremor and an optical sensor to detect the heart rate and blood oxygen saturation. Intelligent learning algorithm will be used to personalize user characteristics, such as baselines of the tremor, heart rate, and oxygen level. © 2022, The Author(s), under exclusive license to Springer Nature Switzerland AG.

关键词： Machine learning

来源：评论

学校读者我要写书评

暂无评论

Hot-electron-injection-induced symmetry breaking in bilayer MoS2 probed by second-harmonic generation

arXiv

引用

arXiv 2025年

作者： Guan, Zhizi Peng, Zhiwei Srolovitz, David J. Khurgin, Jacob Lei, Dangyuan Department of Mechanical Engineering The University of Hong Kong Pokfulam Road Hong Kong Department of Materials Science and Engineering Centre for Functional Photonics Hong Kong Branch of National Precious Metals Material Engineering Research Centre City University of Hong Kong Hong Kong Electrical and Computer Engineering Department Johns Hopkins University BaltimoreMD United States

Symmetry governs the selection rules of light-matter interactions in crystalline materials, making symmetry manipulation a powerful tool for tuning their optical properties. Here, we demonstrate that the hot-electron injection from a plasmonic resonator breaks the centrosymmtry of an adjacent transition metal dichalcogenide bilayer, probed via second-harmonic generation (SHG) in a Au-nanoparticle@bilayer-MoS2@Au-film hybrid system. Power-dependent SHG measurements exhibit saturation behavior, consistent with a capacitor model where interfacial charge accumulation creates a dynamic barrier limiting further electron injection. Polarization-resolved SHG measurements reveal anisotropic second-order susceptibility response under hot-electron injection, where the contrast between different susceptibility components provides a quantitative measure of symmetry-breaking anisotropy. First-principles calculations elucidate the nonlinear optical responses evolution in bilayer MoS2 and comfirm the anisotropic modification of susceptibility components under hot-electron injection, modeled by a perpendicular electric field. Our work establishes SHG as an effective probe of hot-electron-induced symmetry breaking in 2D materials, demonstrating a promising approach for ultrafast manipulation of material properties through controlled charge injection at the nanoscale. Copyright © 2025, The Authors. All rights reserved.

关键词： Nonlinear optics

来源：评论

学校读者我要写书评

暂无评论

Efficient Diffusion-Driven Corruption Editor for Test-Time Adaptation

arXiv

引用

arXiv 2024年

作者： Oh, Yeongtak Lee, Jonghyun Choi, Jooyoung Jung, Dahuin Hwang, Uiwon Yoon, Sungroh Department of Electrical and Computer Engineering Seoul National University Korea Republic of Interdisciplinary Program in Artificial Intelligence Seoul National University Korea Republic of School of Computer Science and Engineering Soongsil University Korea Republic of Division of Digital Healthcare Yonsei University Korea Republic of

Test-time adaptation (TTA) addresses the unforeseen distribution shifts occurring during test time. In TTA, performance, memory consumption, and time consumption are crucial considerations. A recent diffusion-based TTA approach for restoring corrupted images involves image-level updates. However, using pixel space diffusion significantly increases resource requirements compared to conventional model updating TTA approaches, revealing limitations as a TTA method. To address this, we propose a novel TTA method that leverages an image editing model based on a latent diffusion model (LDM) and fine-tunes it using our newly introduced corruption modeling scheme. This scheme enhances the robustness of the diffusion model against distribution shifts by creating (clean, corrupted) image pairs and fine-tuning the model to edit corrupted images into clean ones. Moreover, we introduce a distilled variant to accelerate the model for corruption editing using only 4 network function evaluations (NFEs). We extensively validated our method across various architectures and datasets including image and video domains. Our model achieves the best performance with a 100 times faster runtime than that of a diffusion-based baseline. Furthermore, it is three times faster than the previous model updating TTA method that utilizes data augmentation, making an image-level updating approach more feasible. ∗ © 2024, CC BY.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Microstructural analysis and electro-optic properties of thick epitaxial BaTiO3 films integrated on silicon (001)

引用

Physical Review materials 2022年第9期6卷 095201-095201页

作者： Marc Reynaud Zuoming Dong Hyoju Park Wente Li Agham B. Posadas Jamie H. Warner Daniel Wasserman Alexander A. Demkov Department of Physics University of Texas at Austin Austin Texas 78712 USA Department of Electrical and Computer Engineering University of Texas at Austin Austin Texas 78758 USA Walker Department of Mechanical Engineering University of Texas at Austin Austin Texas 78712 USA Materials Science and Engineering Program and Texas Materials Institute The University of Texas at Austin Texas 78712 USA

Recent advances in epitaxial oxide deposition have enabled the fabrication of thick films of ferroelectric perovskite BaTiO3 capable of providing a robust electro-optic response via the Pockels effect in silicon photonic devices. We report a microstructure analysis of such films integrated on Si(001) by molecular beam epitaxy, showing how the crystallographic and polarization orientation change as a function of thickness. The measured electro-optic properties of the film correlate well with the microstructural analysis and demonstrate the potential of Si-integrated BaTiO3 for silicon photonics. An effective Pockels coefficient of up to 268 pm/V has been demonstrated in 110-nm-thick films in transmission measurements and 352 pm/V in waveguide measurements.

关键词： Ferroelectricity Photonics Epitaxy

来源：评论

学校读者我要写书评

暂无评论

Metal-organic chemical vapor deposition of MgSiN2 thin films

arXiv

引用

arXiv 2025年

作者： Vangipuram, Vijay Gopal Thirupakuzi Hu, Chenxi Majumder, Abdul Mukit Chae, Christopher Zhang, Kaitian Hwang, Jinwoo Kash, Kathleen Zhao, Hongping Department of Electrical and Computer Engineering The Ohio State University ColumbusOH43210 United States Department of Physics Case Western Reserve University ClevelandOH44106 United States Department of Materials Science and Engineering The Ohio State University ColumbusOH43210 United States

Orthorhombic-structured II-IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them, MgSiN2 stands out due to its close compatibility with GaN and AlN and its theoretically predicted ultrawide direct band gap of 6.28 eV. In this work, the growth of MgSiN2 thin films on GaN-on-sapphire and c-plane sapphire substrates was investigated using metal-organic chemical vapor deposition (MOCVD). MOCVD growth conditions were correlated with film quality and crystallinity for samples grown on GaN-on-sapphire substrates. The effects of Mg:Si precursor molar flow rate ratios and growth pressure at two different temperatures, 745℃ and 850℃, were studied comprehensively. High-resolution scanning transmission electron microscopy (STEM) imaging confirmed the formation of high-quality, single-crystal MgSiN2 films. Optical band gap extraction from transmittance measurements yielded direct band gap values ranging from 6.13 eV to 6.27 eV for samples grown under various conditions, confirming the realization of an ultrawide-band gap, III-nitride-compatible, II-IV-nitride material. Copyright © 2025, The Authors. All rights reserved.

关键词： Sapphire

来源：评论

学校读者我要写书评

暂无评论

Twenty years of e-learning in health science: A bibliometric

引用

Procedia computer science 2023年 216卷 604-612页

作者： Fairuz Iqbal Maulana M. Aldiki Febriantono Dwi Risza Budi Raharja Khaeruddin Ridho Herasmara Computer Science Department School of Computer Science Bina Nusantara University Jakarta 11480 Indonesia Diploma III Electronic Technology Vocational Study Program University of Muhammadiyah Malang Indonesia Electrical Engineering Faculty of Science and Technology Raden Rahmat Islamic University Malang Indonesia

Education about health sciences has historically been limited in the curriculum of health professionals and largely inaccessible to the public. In practice, most of the health science education is still running conventionally. Supposedly with the advancement of technology and the use of the internet everywhere, learning such as e-learning can be important, especially in the health sector. Until this research was conducted, only 514 academic documents about e-learning in health sciences were found for 20 years from 2001 to 2020, obtained in searching on the Scopus database. This study presents a comprehensive overview of studies related to E-learning in the Health sciences sector. This study uses bibliometric analysis and indexed digital methods to map scientific publications throughout the world. This research employs the Scopus database to gather information, as well as the Scopus online analysis tool and Vosviewer to show the bibliometric network. The method consists with five stages: determining search keywords, initial search results, refinement of search results, initial compilation, and data analysis. Among the most published and indexed articles by Scopus, papers published by researchers in the United States have the highest number of publications (80), followed by United Kingdom (63) and Australia with 45 academic publications. The processed data shows the pattern and trend of increasing the number of international publications in E-learning in Health sciences field, which Scopus index.

关键词： e-learning health science bibliometric vosviewer education

来源：评论

学校读者我要写书评

暂无评论

Joint Source Decomposition of Concurrent EEG-FMRI Data in Epilepsy and Control Groups

Joint Source Decomposition of Concurrent EEG-FMRI Data in Ep...

引用

IEEE International Symposium on Biomedical Imaging

作者： J. Mason Harding Haatef Pourmotabbed Yamin Li Kimberly Rogge-Obando Kate Wang Sarah E. Goodale Shiyu Wang Camden Bibro Bergen Allee Caroline Martin Victoria L. Morgan Dario J. Englot Catie Chang Department of Electrical and Computer Engineering Vanderbilt University Department of Biomedical Engineering Vanderbilt University Department of Computer Science Vanderbilt University Neuroscience Graduate Program Vanderbilt University Vanderbilt Memory and Alzheimer's Center Vanderbilt University Medical Center Department of Neurological Surgery Vanderbilt University Medical Center Department of Radiology Vanderbilt University Medical Center

ISBN: (数字)9798331520526

ISBN: (纸本)9798331520533

EEG and fMRI are complementary, noninvasive technologies for investigating human brain function. These modalities have been used to uncover large-scale functional networks and their disruptions in clinical populations. Given the high temporal resolution of EEG and high spatial resolution of fMRI, integrating these modalities can provide a more holistic understanding of brain activity. This work explores a multimodal source decomposition technique for extracting shared modes of temporal variation between fMRI BOLD signals and EEG spectral power fluctuations in the resting state. The resulting components are then compared between patients with focal epilepsy and controls, revealing multimodal network differences between groups.

关键词： Neuroimaging Brain Fluctuations Epilepsy Functional magnetic resonance imaging Electroencephalography Pattern recognition Hemodynamics Spatial resolution Signal resolution

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：