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IEEE Latin American Robotics Symposium, LARS

作者： Hiago O. B. Batista Thayron M. Hudson Kevin B. de Carvalho Alexandre S. Brandão Department of Electrical Engineering Graduate Program in Computer Science Núcleo de Especialização em Robótica (NERo) Universidade Federal de Viçosa Viçosa - MG Brazil

ISBN: (数字)9798331508807

ISBN: (纸本)9798331508814

This paper presents an offline path planning strategy for unmanned ground vehicles (UGVs) using Q-learning. The proposed method addresses path optimization in warehouse-like environments, where tasks involve item pickup and delivery to specific locations. The Q-learning algorithm trains an agent to determine the most efficient routes, with validation conducted in an $8 \times 5$ meter workspace equipped with an Optitrack motion capture system. The workspace was discretized into a $16 \times 10$ grid, allowing the Q-learning to effectively navigate through complex obstacle-laden scenarios. Experimental results indicate that the Q-learning approach outperforms traditional methods such as Dijkstra, A-star, and Breadth-First Search in terms of path length, number of turns, planning time, and overall success rate; being up to 7 times faster to plan a path and reducing the number of bends by up to 41%. The Q-learning based paths feature more linear segments, which contribute to energy savings and improved navigational efficiency. Future work will explore applications in heterogeneous multi-agent systems and enhancements in training time and agent collaboration.

关键词： Training Meters Q-learning Navigation Path planning Motion capture Planning Robots Optimization Multi-agent systems

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The Impact of Nickel Doping on Metal-Oxide Network in Solution-Processed Indium Zinc Oxide Transistors

SSRN

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SSRN 2023年

作者： Kim, In Ho Kim, Se Jin Kim, Sung-Jin An, Tae Kyu Jeong, Yong Jin Department of Materials Science and Engineering Korea National University of Transportation Chungju27469 Korea Republic of College of Electrical and Computer Engineering Chungbuk National University Cheongju28644 Korea Republic of Department of Polymer Science and Engineering Korea National University of Transportation Chungju27469 Korea Republic of

Solution-processed nickel zinc oxide (IZO) thin-film transistors (TFTs) are of great interest as core elements for future display technology based on the low-cost manufacture. In this study, we suggest a solution-based doping process of the IZO semiconductors with a resource-friendly Ni carrier suppressor, instead of Ga, and investigated the effects of Ni on their transistor operation. Owing to similar size of Ni2+ to Zn2+, an appropriate concentration of Ni partially substituted Zn sites and the strong bonding force of Ni with O reduces hydroxide groups on the surface bonded to Zn, whereas excess Ni addition rather inhibited the formation of smooth thin film. The resulting Ni-doped IZO TFT devices from an optimized Ni concentration exhibited higher performances with significantly reduced off-state currents while maintaining high on-state currents, compared to IZO TFTs. This approach enriches the current family of solution-processed metal oxide semiconductors by providing another option for resource-friendly carrier suppressor, which can contribute to the inexpensive and simple solution process for fabricating TFTs. © 2023, The Authors. All rights reserved.

关键词： Thin film transistors

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Ion irradiation induced crystalline disorder accelerates interfacial phonon conversion and reduces thermal boundary resistance

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Physical Review B 2024年第16期109卷 165421-165421页

作者： Thomas W. Pfeifer Henry Aller Eric R. Hoglund Ethan A. Scott John A. Tomko Habib Ahmad Alan Doolittle Ashutosh Giri Khalid Hattar Alan J. H. McGaughey Patrick E. Hopkins Department of Mechanical and Aerospace Engineering University of Virginia Charlottesville Virginia 22904 USA Department of Mechanical Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 USA Department of Materials Science and Engineering University of Virginia Charlottesville Virginia 22904 USA Sandia National Laboratories Albuquerque New Mexico 87185 USA School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA Center for Advanced Electronics & Photovoltaic Engineering IIUI Islamabad Department of Mechanical Industrial and Systems Engineering University of Rhode Island Kingston Rhode Island 02881 USA Department of Nuclear Engineering University of Tennessee Knoxville Tennessee 37996 USA Department of Physics University of Virginia Charlottesville Virginia 22904 USA

Traditional understanding of the thermal boundary resistance (TBR) across solid-solid interfaces posits that the vibrational densities of states overlap between materials dictates interfacial energy transport, with phonon scattering occurring at the interface. Using atomistic simulations, we show a mechanism for control of TBR; point defects near an interface can lead to both short- and midrange disorder, accelerating the conversion of vibrational energy between bulk and interfacial modes, ultimately reducing the TBR. We experimentally demonstrate this reduction through ion irradiation of gallium nitride and subsequently measuring the TBR across Al/GaN interfaces.

关键词： Crystal defects Defects Irradiation effects Lattice dynamics Phonons Thermal boundary conductance Vibrational states Interfaces Semiconductor compounds Transducers Ion implantation Molecular dynamics Thermoreflectance

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Growth windows of epitaxial NbxN films on c-plane sapphire and their structural and superconducting properties

arXiv

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arXiv 2022年

作者： Wright, John G. Xing, Huili G. Jena, Debdeep Department of Materials Science and Engineering Cornell University IthacaNY14853 United States Department of Materials Science and Engineering Kavli Institute for Nanoscale Science School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States

NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. In a novel finding, we demonstrate that atomically flat and highly crystalline β-Nb2N films can be grown at substrate temperatures of 1100 ◦C or higher, and that the superconducting critical temperature of phase pure β-Nb2N films is 0.35 K Copyright © 2022, The Authors. All rights reserved.

关键词： Niobium compounds

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Active Beam Steering of Terahertz Waves with Phase Change-based Metasurfaces

Active Beam Steering of Terahertz Waves with Phase Change-ba...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Riad Yahiaoui Zizwe A. Chase Zhixiang Huang Xi Wang Thomas A. Searles Department of Electrical & Computer Engineering University of Illinois at Chicago Chicago IL USA Department of Materials Science and Engineering University of Delaware Newark DE USA

We demonstrate active control of THz beams with a phase change material, VO 2 , patterned into a metasurface microcavity. We experimentally confirm simulations showing up to 35 degree deflection at 300 GHz.

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

关键词： Phase change materials Beam steering Electro-optic deflectors Lasers and electrooptics Metasurfaces Microcavities Laser beams

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Interferometry Among Strongly Driven Quasiparticles with Distinct Dynamical and Geometrical Phases

Interferometry Among Strongly Driven Quasiparticles with Dis...

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： O'Hara, Seamus Costello, Joe Tian, Qi Wu, Qile West, Ken Pfeiffer, Loren Sherwin, Mark Wu, Liang Department of Physics Institute of Terahertz Science and Technology University of California Santa Barbara Santa BarbaraCA93106 United States Intelligence Community Post-Doctoral Research Fellowship Program PhiladelphiaPA19104 United States Department of Physics University of Pennsylvania PhiladelphiaPA19104 United States Department of Electrical and Computer Engineering Princeton University PrincetonNJ08542 United States

ISBN: (纸本)9781957171395

In this proceeding, we present polarization data of sidebands emitted from strongly driven quasiparticles, demonstrate the dependence of these data on various parameters of the external driving field, and describe the data using an analytical expression, dependent on driving field parameters and the effective Hamiltonian of the system. We propose using this method on spin-momentum locked systems, such as altermagnets, to observe and reconstruct sidebands which are influenced by the topology of individual bands. © Optica Publishing Group 2024 © 2024 The Author(s)

关键词： Topology

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Predicting Human Activity with LSTM Face Detection on Server Surveillance System

Predicting Human Activity with LSTM Face Detection on Server...

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International Conference on Artificial Intelligence in Information and Communication (ICAIIC)

作者： Alexander Nurenie Yaya Heryadi Lukas Wayan Suparta Yulyani Arifin Computer Science Department BINUS Graduate Program – Doctor of Computer Science Bina Nusantara University Indonesia Cognitive Engineering Research Group (CERG) Universitas Katolik Indonesia Atma Jaya Indonesia Department of Electrical Engineering Faculty of Industrial Technology Institut Teknologi Nasional Yogyakarta Indonesia

Surveillance server technology was growth with new technology, effective, extra new features, human friendly, and human deals with big amount data, can't view and collect the data in the short time, and took time to analyze, playback video/picture to determine machine, human, vehicle or environment issues or performance, Surveillance Server Systems now which has the ability to face recognition, face detection, human detection, motion detection, license plate recognition, The authors perform this study that still new this research has never been done before to determine the efficacy of the LSTM in predicting human behavior (Long Short Term Memory) Face Detection on Server surveillance system, by taking log view data with a total of 91501 Face detection data downloaded from 10/18/2022~11/9/2022, the data will be processed using Python programming and training so that it can be used to predict the future regarding human activities that vary utilizing time series prediction LSTM include the number of daily activities, the highest and lowest numbers of days, and the maximum and minimum numbers of days. from the results of this study it was found to help to find out the days with the lowest number of humans and the days with the highest number of human activities, so that the owner can predict with sequence of the data the service would be provided when human activity is high in certain area or certain day, it can also can find out the maximum or minimum amount human counting day by day, and compare able some different date and location, the author will continue to do more in-depth research the others data related with prediction with deep learning server surveillance machine system interaction with human, vehicle behavior in the future studies.

关键词： Training Surveillance Time series analysis programming Behavioral sciences Servers Face detection

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Machine learning assisted identification of homobilayer sliding ferroelectrics with large out-of-plane polarization and low sliding energy barriers

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Physical Review B 2025年第9期111卷 094106-094106页

作者： Xian Wang Yifan Li Ying Zhang Peng Wang Yi-Ming Zhao Jun Zhou Jie Yang Xuesen Wang Lei Shen Department of Physics National University of Singapore Singapore 117551 Singapore Department of Mechanical Engineering National University of Singapore Singapore 117575 Singapore Department of Electrical and Computer Engineering National University of Singapore Singapore 117576 Singapore National University of Singapore (Chongqing) Research Institute Chongqing 401123 China College of Electronic and Information Engineering Shandong University of Science and Technology Qingdao 266590 China Institute of Materials Research and Engineering (IMRE) Agency for Science Technology and Research (ASTAR6) Singapore 138634 Singapore Key Laboratory of Material Physics Ministry of Education School of Physics Zhengzhou University Zhengzhou 450001 China

Two-dimensional (2D) ferroelectric materials hold great promise for ultrahigh-density data storage and ultrafast memory applications in flexible or wearable electronic devices. Because of depolarizing field effects and high-energy barriers for switching, only a handful of 2D ferroelectrics have been reported experimentally, such as In2Se3 and CuInP2S6. Through high-throughput calculations we identified a catalog of 25 synthesizable sliding ferroelectrics with large out-of-plane polarization and low sliding energy barriers. The high-throughput process started with 6351 monolayer materials in 2dmatpedia, narrowed down to 79 monolayer semiconductors with honeycomb structures, leading to the construction of 474 homobilayers sliding ferroelectrics, and ultimately identifying 25 high-performance 2D sliding ferroelectrics. Using big-data analysis and machine learning, we also revealed strong correlations between polarization and key physical properties, especially a hidden factor of effective van der Waals radius, which has been overlooked in previous fewer-sample studies. Based on these mechanistic insights, we proposed machine learning descriptors for predicting sliding ferroelectric properties.

关键词： Van der Waals forces

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Periodic phase diagrams in micromagnetics with an eigenvalue solver

arXiv

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arXiv 2024年

作者： Ai, Fangzhou Lin, Zhuonan Duan, Jiawei Lomakin, Vitaliy Department of Electrical and Computer Engineering University of California La Jolla San DiegoCA92093 United States Center for Memory and Recording Research University of California La Jolla San DiegoCA92093 United States Program in Materials Science and Engineering University of California La Jolla San Diego92093 United States

This work introduces an approach to compute periodic phase diagram of micromagnetic systems by solving a periodic linearized Landau-Lifshitz-Gilbert (LLG) equation using an eigenvalue solver with the Finite Element Method formalism. The linear operator in the eigenvalue problem is defined as a function of the periodic phase shift wave vector. The dispersion diagrams are obtained by solving the eigenvalue problem for complex eigen frequencies and corresponding eigen states for a range of prescribed wave vectors. The presented approach incorporates a calculation of the periodic effective field, including the exchange and magnetostatic field components. The approach is general in that it allows handling 3D problems with any 1D, 2D, and 3D periodicities. The ability to calculated periodic diagrams provides insights into the spin wave propagation and localized resonances in complex micromagnetic structures. © 2024, CC BY-NC-ND.

关键词： Spin waves

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Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention

Enhanced Memory Performance in Ferroelectric NAND Applicatio...

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2025 IEEE International Reliability Physics Symposium, IRPS 2025

作者： Venkatesan, Prasanna Padovani, Andrea Fernandes, Lance Ravikumar, Priyankka Park, Chinsung Tran, Huy Wang, Zekai Jayasankar, Hari Garlapati, Amrit Song, Taeyoung Chen, Hang Chern, Winston Wang, Zheng Kim, Kijoon Woog, Jongho Lim, Suhwan Kim, Kwangsoo Kim, Wanki Ha, Daewon Yu, Shimeng Dattal, Suman Larcher, Luca Thareja, Gaurav Khanl, Asif School of Electrical and Computer Engineering Georgia Institute of Technology GA United States University of Modena and Reggio Emilia Engineering Department 'Enzo Ferrari' Italy Institute of Electronics and Nanotechnology Georgia Institute of Technology GA United States Micron Technology United States Samsung Electronics Advanced Device Research Laboratory Semiconductor Research Center Korea Republic of School of Material Science and Engineering Georgia Institute of Technology GA United States Applied Materials United States

ISBN: (纸本)9798331504779

We report a comprehensive study on memory window (MW) enhancement and retention loss (RL) in ferroelectric (FE) field effect transistors for NAND applications with a dielectric layer inserted within the FE film (next to the gate GBL devices or in the middle of the FE layer TDL devices). Using a temperature-dependent modeling framework, we show that MW and RL properties are controlled respectively by carriers trapping into defects at the dielectric-FE interface and by its fragile balance with FE depolarization. While MW enhancement is achieved whenever the inserted dielectric layer is present, a robust retention is obtained only in TDL FEFETs, thanks to a stabilization of the trapped charge preventing FE depolarization. Simulation results clearly demonstrate that the fragile balance between above phenomena is ultimately controlled by the position of the dielectric layer, which determines i) the field redistribution within the stack, ii) the magnitude of charge de-trapping, and iii) the magnitude of the depolarization field. Our results provide critical guidelines for the improvement of FE 3D-NAND reliability. © 2025 IEEE.

关键词： Ferroelectric films

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