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Low Thermal Conductivity Plaster – Perlite Microsphere Composites as Potential Thermal Insulation materials in Building Construction

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International Journal of Thermophysics 2025年第7期46卷 1-18页

作者： Viskadourakis, Z. Angelopoulos, P. M. Orfanou, M. Drymiskianaki, Α. Manousaki, A. Koudoumas, E. Taxiarchou, M. Kenanakis, G. Foundation for Research and Technology – Hellas (FORTH) Institute of Electronic Structure and Laser (IESL) Heraklion Greece School of Mining and Metallurgical Engineering National Technical University of Athens Athens Greece Department of Electrical and Computer Engineering Hellenic Mediterranean University Heraklion Greece Department of Materials Science and Technology University of Crete Heraklion Crete Greece National Institute for R&D in Microtechnologies - IMT Bucharest Bucharest Romania

In the current study plaster − expanded perlite microsphere composites, were investigated regarding their thermal insulation properties. In this context commercially available plaster powder was mixed with expanded perlite microspheres, of various grain size distribution and bulk density, aiming the investigation of the effect of ultrafines in the aggregates on the mechanical properties of the composites. The mixing procedure resembles that of making plaster mortars, in building construction. Thermal conductivity of composites was found to be sizably lower than that of pure plaster, and was further decreased with increasing filler loading. Moreover, filler density seems to affect thermal insulation performance, at high loading concentrations. Slight increase of the mechanical properties was identified when aggregates include ultrafine particles. Thermal insulation performance experiments indicate that plaster − expanded perlite microsphere composites clearly exhibit better thermal insulation properties, in comparison to pure plaster. Overall, expanded plaster − expanded perlite microsphere composites seem to be efficient insulation materials for potential applications in buildings’ construction, toward reducing their energy footprint.

关键词： Thermal insulation

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AI-driven materials design: a mini-review

arXiv

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arXiv 2025年

作者： Cheng, Mouyang Fu, Chu-Liang Okabe, Ryotaro Chotrattanapituk, Abhijatmedhi Boonkird, Artittaya Hung, Nguyen Tuan Li, Mingda Quantum Measurement Group MIT CambridgeMA02139 United States Center for Computational Science & Engineering MIT CambridgeMA02139 United States Department of Materials Science and Engineering MIT CambridgeMA02139 United States Department of Nuclear Science and Engineering MIT CambridgeMA02139 United States Department of Chemistry MIT CambridgeMA02139 United States Department of Electrical Engineering and Computer Science MIT CambridgeMA02139 United States Frontier Research Institute for Interdisciplinary Sciences Tohoku University Sendai980-8578 Japan

materials design is an important component of modern science and technology, yet traditional approaches rely heavily on trial-and-error and can be inefficient. Computational techniques, enhanced by modern artificial intelligence (AI), have greatly accelerated the design of new materials. Among these approaches, inverse design has shown great promise in designing materials that meet specific property requirements. In this mini-review, we summarize key computational advancements for materials design over the past few decades. We follow the evolution of relevant materials design techniques, from high-throughput forward machine learning (ML) methods and evolutionary algorithms, to advanced AI strategies like reinforcement learning (RL) and deep generative models. We highlight the paradigm shift from conventional screening approaches to inverse generation driven by deep generative models. Finally, we discuss current challenges and future perspectives of materials inverse design. This review may serve as a brief guide to the approaches, progress, and outlook of designing future functional materials with technological relevance. © 2025, CC BY.

关键词： Deep reinforcement learning

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Superconducting Sn-Intercalated TaSe2: Structural Diversity Obscured by Conventional Characterization Techniques

arXiv

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arXiv 2025年

作者： Bierman, Brenna C. Ma, Hongrui Wang, Ying Rhodes, Daniel A. Department of Chemistry University of Wisconsin-Madison MadisonWI53706 United States Department of Electrical and Computer Engineering University of Wisconsin-Madison MadisonWI53706 United States Department of Physics University of Wisconsin-Madison MadisonWI53706 United States Department of Materials Science and Engineering University of Wisconsin-Madison MadisonWI53706 United States

Using Sn-intercalated TaSe2 as a model system, we uncover structural heterogeneity by single-crystal X-ray diffraction that eludes the common characterization techniques of powder X-ray diffraction, Raman spectroscopy, and electrical transport measurements. From a single growth composition (1:1:2 Sn:Ta:Se), we obtain diverse stoichiometries and structures, with near-continuous intercalation for SnxTaSe2 from 0 ≤ x ≤ 1. Using single-crystal X-ray diffraction, we identify four new structures: Sn0.18TaSe1.92 (R3m), Sn0.37TaSe2.14 (R3¯), Sn0.42TaSe2.04 (P3¯1c), and Sn1.1TaSe2 (Fmm2). In contrast, powder X-ray diffraction cannot resolve all four structures. Raman spectroscopy is unable to distinguish different structures or compositions in the standard measurement range. Transport measurements show consistent superconductivity irrespective of Sn-intercalation amount or appearance of charge density wave behavior. This work underscores the inadequate sensitivity of common approaches in capturing the structural diversity of intercalated transition metal dichalcogenides and the need for high-resolution structural characterization when examining the properties of van der Waals-layered compounds. Copyright © 2025, The Authors. All rights reserved.

关键词： Van der Waals forces

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Detection of atmospheric carbon dioxide with air-lasing-based coherent Raman spectroscopy

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Optics Express 2025年第11期33卷 23873-23882页

作者： Ning Zhang Zelong Li Rongyu Gong Pengyu Xue Xu Lu Bo Shen Quanjun Wang Jinping Yao State Key Laboratory of Ultra-Intense Laser Science and Technology Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Shanghai 201800 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China School of Microelectronics Shanghai University Shanghai 200444 China School of Optical-Electrical and Computer Engineering University of Shanghai for Science and Technology Shanghai 200093 China Department of Optics and Optical Engineering University of Science and Technology of China Hefei 230026 China Institute of Modern Optics Nankai University Tianjin 300350 China

Coherent anti-Stokes Raman scattering (CARS) is recognized as a powerful technique for chemical sensing, biological imaging, and combustion diagnostics, but it is rarely used in atmospheric detection due to complex multi-beam configuration and fine spatio-temporal control. Air lasing provides an attractive probe source for CARS, largely simplifying its implementation. Herein, we successfully detected atmospheric carbon dioxide (CO 2 ) using air-lasing-based CARS spectroscopy and quantified its concentration to be 485.5 ppm and 502.0 ppm based on two CARS signals. The measured concentrations exhibit relative errors of 0.6% and 2.7% compared to the result obtained from a commercial gas analyzer. The detection limit reaches 43 ppm, which is one order of magnitude lower than previous results. The precision exhibits a nearly quadratic decay, gradually stabilizing at a constant value as the concentration increases. The precision for atmospheric CO 2 detection ranges from 9% to 10%. The developed spectroscopy holds great potential in standoff detection of air pollutants, biological agents, and radioactive substances.

关键词： Biomedical imaging Dual comb spectroscopy Femtosecond lasers Frequency combs Laser beams Raman scattering

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High-Q, size-independent, and reconfigurable optical antennas via zero-index material dispersion engineering

arXiv

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arXiv 2025年

作者： Iyer, Prasad P. Pendharkar, Mihir Agrawal, Anchal Foronda, Humberto Iza, Mike Mishra, Umesh K. Nakamura, Shuji DenBaars, Steven Keller, Stacia Palmstrøm, Chris Schuller, Jon A. Electrical and Computer Engineering Department University of California Santa BarbaraCA United States Material Science and Engineering Department University of California Santa BarbaraCA United States Solid State Lighting and Energy Center University of California Santa BarbaraCA United States Center for Integrated Nanotechnologies Sandia National Lab AlbuquerqueNM United States Materials Science and Engineering department Stanford University StanfordCA United States

Enhancing light-matter interactions at the nanoscale is foundational to nanophotonics, with epsilon-near-zero (ENZ) materials demonstrating significant potential. High-quality (Q) factor resonances maximizing these interactions are typically realized in photonic crystals requiring sub-50 nm precision nanofabrication over large areas, limiting scalability and increasing complexity. Mie resonances offer an alternative but are constrained by low Q-factors due to the scarcity of high refractive index materials, necessitating large refractive index changes for effective resonance switching and limiting dynamic reconfigurability. We overcome these limitations by embedding Mie resonators within ENZ media, thereby enhancing Q-factors, mitigating geometric dispersion and fabrication challenges, and maximizing optical reconfigurability. We introduce three resonator-ENZ configurations: voids in AlN, Ge in SiO2, and intrinsic InSb in doped InSb—spanning from low-loss phononic to lossy plasmonic ENZ modes. Using novel epitaxial regrowth techniques, we achieve significant Q-factor improvements over non-embedded resonators. Notably, an air-based Mie resonator embedded in AlN supports resonant Q-factors exceeding 100, with negligible geometric dispersion across sizes from 800 nm to 2,800 nm. Additionally, we demonstrate dynamic reconfigurability of intrinsic InSb resonators by thermally tuning the ENZ wavelength over a 2 µm range in the mid-infrared (11–16 µm) wavelength regime. These results showcase the potential of Mie reonators embedded in ENZ media for high-fidelity sensors, thermal emitters, and reconfigurable metasurfaces, bridging theoretical predictions with practical applications, advancing the development of dynamic, high-Q optical devices. © 2025, CC BY-NC-SA.

关键词： Q factor measurement

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Correction to: Scalable fabrication of wide-bandgap perovskites using green solvents for tandem solar cells (Nature Energy, (2024), 10.1038/s41560-024-01672-x)

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Nature Energy 2025年

作者： Duan, Chenyang Gao, Han Xiao, Ke Yeddu, Vishal Wang, Bo Lin, Renxing Sun, Hongfei Wu, Pu Ahmed, Yameen Bui, Anh Dinh Zheng, Xuntian Wang, Yurui Wen, Jin Wang, Yinke Ou, Wennan Liu, Chenshuaiyu Zhang, Yuhong Nguyen, Hieu Luo, Haowen Li, Ludong Liu, Ye Luo, Xin Saidaminov, Makhsud I. Tan, Hairen National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences Frontiers Science Center for Critical Earth Material Cycling Nanjing University Nanjing China Co. Ltd Suzhou China Department of Chemistry University of Victoria VictoriaBC Canada Research School of Electrical Energy and Materials Engineering College of Engineering and Computer Science The Australian National University CanberraNSW Australia

Correction to: Nature Energyhttps://***/10.1038/s41560-024-01672-x, published online 15 November 2024. In the version of the article initially published, we mistakenly listed the environmental score for DMSO as 4 instead of the correct score of 5, based on the evaluation criteria outlined by CHEM21. This error, along with the transposition of the "NMP" and "DMPU" labels on the x axis, has been corrected in Fig. 1a, as seen below in Fig. 1. (Figure presented.) Original and corrected Fig. 1a. To ensure clarity and accuracy, we have revised our understanding of the combination rules for determining risk levels. Previously, our explanation might have been unclear or misleading to readers. To address this, we have included an excerpt from the CHEM21 solvent guide below, which provides a clear list of solvent risk levels and their ranking rules (Tables 1 and 2). (Table presented.) (Table presented.) CHEM21 solvent guide of "classical" solvents1 Ranking by default1 These two tables clearly illustrate the risk levels and comprehensive evaluation criteria for the solvents discussed in our article. To enhance reader understanding, we have also integrated this information into the corrected Fig. 1a, providing a visual representation of the risk levels associated with different solvents. Additionally, we have made two necessary revisions to the second paragraph of the article. The sentence "To address this challenge, the evaluation criteria outlined by CHEM21 offer a guide, categorizing solvents into four groups based on their impact on safety, health and environment10, namely recommended (no chemical incompatibility under process conditions), problematic (suitable for lab or kilo-scale lab use), hazardous (strong constraints on scale-up) and highly hazardous (solvents to be avoided even in the lab)" has been corrected to "To address this challenge, the evaluation criteria outlined by CHEM21 offer a guide, comprehensively categorizing solvents into three groups based on the

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Advancements of Amorphous IGZO-Based Transistors: materials, Processing, and Devices

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ACS Applied Electronic materials 2025年

作者： Kim, Jae Young Kim, Hyunseong Kim, Daechoon Jang, Ho Won Department of Materials Science and Engineering Research Institute of Advanced Materials Seoul National University Seoul 08826 South Korea Department of Electrical and Computer Engineering Texas A&M University College Station 77843 TX United States Advanced Institute of Convergence Technology Seoul National University Suwon 16229 South Korea

Amorphous oxide semiconductors (AOS) containing transition metals have garnered significant attention as promising alternatives to conventional semiconductors due to their various technical advantages, including low-temperature large-area deposition, the ability to maintain performance under mechanical deformation, and high carrier mobility even in the amorphous state. This review analyzes the crystallinity, deposition conditions, and electrical properties of indium gallium zinc oxide (IGZO), a representative material among AOS, and examines how these factors influence the performance of amorphous IGZO (a-IGZO) transistors. Additionally, the mechanisms behind the reliability and performance degradation of these devices, as well as their structural characteristics, are summarized. Recent application trends are categorized and analyzed in the fields of displays, sensors, and memory/logic devices. Lastly, this review identifies the remaining technical challenges and discusses promising directions for the broader deployment of an a-IGZO transistor in emerging electronic applications. © 2025 American Chemical Society.

关键词： amorphous oxide semiconductors displays IGZO logic memory sensors transistors

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Multi-modal Long-Short Distance Attention-based Transformer-GAN for PET Reconstruction with Auxiliary MRI

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IEEE Transactions on Circuits and Systems for Video Technology 2025年

作者： Zeng, Pinxian Zeng, Xinyi Wang, Yan Zhou, Luping Zu, Chen Wu, Xi Zhou, Jiliu Shen, Dinggang Sichuan University School of Computer Science China University of Sydney School of Electrical and Information Engineering Australia Department of Risk Controlling Research *** China Chengdu University of Information Technology School of Computer Science China ShanghaiTech University School of Biomedical Engineering State Key Laboratory of Advanced Medical Materials and Devices Shanghai201210 China Shanghai United Imaging Intelligence Co. Ltd Shanghai200232 China Shanghai Clinical Research and Trial Center Shanghai201210 China

To obtain high-quality PET scans while minimizing potential radiation hazards for patients, various GAN-based methods have been developed to reconstruct high-quality standard-count PET (SPET) images from low-count PET (LPET) ones. While recent efforts try to integrate MRI or CT to enhance reconstruction in a multi-modal way, current architectures mainly face two limitations: (1) CNN backbones or simple Transformer bottleneck layers are insufficient for robust semantic understanding, and (2) the identical strategies for multi-modal feature extraction and fusion overlook each modality's respective importance for the reconstruction task. In this work, we propose the Multi-modal Long-Short Distance Attention-based Transformer-GAN (MLSDA-GAN), a novel network combining 3D transformer and CNN architecture for PET image reconstruction. Specifically, to extract fine-grained features with a small number of parameters, our MLSDA-GAN integrates multi-scale convolution into the embedding part of the transformer. As for our multi-modal design, given the strong correlation between LPET and SPET in structural characteristics, we treat MRI as an auxiliary modality to LPET and achieve effective multi-modal extraction and fusion strategies. These strategies include (1) a PET-specific Self-attention Extraction (PSE) block for comprehensive feature extraction of the primary LPET and (2) a Multi-modality Cross-attention Fusion (MCF) block for effective multi-modal interaction and fusion, enabling us to more efficiently model both long- and short-range relationships in the corresponding feature extraction and fusion processes. Experiments demonstrate superiority of our method quantitatively and qualitatively. Code is available at https://***/Aru321/MLSDA-GAN. © 1991-2012 IEEE.

关键词： Radiation hazards

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Wannier-Function-Based Approach to Coupled Exciton-Phonon-Photon Dynamics in Two-Dimensional Semiconductors

arXiv

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arXiv 2025年

作者： Steinhoff, Alexander Jahnke, Frank Florian, Matthias Institut für Theoretische Physik Universität Bremen Bremen28334 Germany Bremen Center for Computational Materials Science Universität Bremen Bremen28334 Germany University of Michigan Department of Electrical Engineering and Computer Science Ann ArborMI48109 United States

Marrying the predictive power of ab initio calculations with many-body effects remains a challenging task in two-dimensional (2d) materials, where efficient carrier-carrier interaction challenges established approximation schemes. In particular, understanding exciton-phonon interaction from first principles is a field of growing interest. Here, we present a many-body theory for coupled free-carrier, exciton, phonon and photon dynamics based on carrier-carrier and carrier-phonon interaction matrix elements obtained via projection on Wannier orbitals. The framework is applied to study the impact of carrier-phonon correlations on optical spectra and coupled nonequilibrium carrier-phonon kinetics in monolayer MoSe2. We find that non-Markovian effects and dynamical buildup of quasi-particles are only properly described if correlations at least on the two-phonon level are included. Our studies open a perspective to advance the material-realistic description of nonequilibrium physics in 2d nanostructures to new many-body realms. © 2025, CC BY.

关键词： Excitons

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Epitaxial high-K barrier AlBN/GaN HEMTs

arXiv

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arXiv 2025年

作者： Savant, Chandrashekhar Nguyen, Thai-Son Nomoto, Kazuki Vishwakarma, Saurabh Ma, Siyuan Dhar, Akshey Chen, Yu-Hsin Casamento, Joseph Smith, David J. Xing, Huili Grace Jena, Debdeep Department of Materials Science and Engineering Cornell University IthacaNY14853 United States School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States School for Engineering of Matter Transport and Energy Arizona State University TempeAZ85287 United States Department of Materials Science and Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Department of Physics Arizona State University TempeAZ85287 United States Kavli Institute at Cornell for Nanoscale Science Cornell University IthacaNY14853 United States School of Applied and Engineering Physics Cornell University IthacaNY14853 United States

We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors that exhibit current densities > 0.25 A/mm, clean current saturation, a low pinch-off voltage of -0.43 V, and a peak transconductance of ∼0.14 S/mm. Transistor performance in this preliminary realization is limited by the contact resistance. Capacitance-voltage measurements reveal that introducing ∼7 % B in the epitaxial AlBN barrier on GaN boosts the relative dielectric constant of AlBN to ΕrAlBN ∼ 16, higher than the AlN dielectric constant of ΕrAlN ∼ 9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus extend performance beyond the capabilities of current GaN transistors. © 2025, CC BY-NC-ND.

关键词： Gallium nitride

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