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La-substituted W-type barium-nickel ferrites for tunable and high-performance electromagnetic wave absorption

International Journal of Minerals,Metallurgy and materials 2025年第3期32卷 645-656页

作者： Long Wang Jiurong Liu Shenghui Xie Yanli Deng Zhou Wang Shanyue Hou Shengying Yue Gang Wang Na Wu Zhihui Zeng Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials(Ministry of Education) School of Materials Science and EngineeringShandong UniversityJinan 250061China Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education and International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi’an Jiaotong UniversityXi’an 710049China Army Engineering University of PLA College of Field Engineering Nanjing 210007China Laboratory for Multiscale Mechanics and Medical Science State Key Laboratory for Strength and Vibration of Mechanical StructuresSchool of AerospaceXi’an Jiaotong UniversityXi’an 710049China Department of Electrical and Computer Engineering Beckman Institute for Advanced Science and TechnologyUniversity of Illinois at Urbana-ChampaignUrbana 61801USA School of Chemistry and Chemical Engineering Shandong UniversityJinan 250100China

W-type barium-nickel ferrite(BaNi_(2)Fe_(16)O_(27))is a highly promising material for electromagnetic wave(EMW)absorption be-cause of its magnetic loss capability for EMW,low cost,large-scale production potential,high-temperature resistance,and excellent chemical ***,the poor dielectric loss of magnetic ferrites hampers their utilization,hindering enhancement in their EMW-absorption *** efficient strategies that improve the EMW-absorption performance of ferrite is highly desired but re-mains ***,an efficient strategy substituting Ba^(2+)with rare earth La^(3+)in W-type ferrite was proposed for the preparation of novel La-substituted ferrites(Ba_(1-x)LaxNi_(2)Fe_(15.4)O_(27)).The influences of La^(3+)substitution on ferrites’EMW-absorption performance and the dissipative mechanism toward EMW were systematically explored and ***^(3+)efficiently induced lattice defects,enhanced defect-induced polarization,and slightly reduced the ferrites’bandgap,enhancing the dielectric properties of the ***^(3+)also enhanced the ferromagnetic resonance loss and strengthened magnetic *** effects considerably improved the EMW-absorption perform-ance of Ba_(1-x)LaxNi_(2)Fe_(15.4)O_(27)compared with pure W-type *** x=0.2,the best EMW-absorption performance was achieved with a minimum reflection loss of-55.6 dB and effective absorption bandwidth(EAB)of 3.44 GHz.

关键词： electromagnetic wave absorption W-type barium ferrite rare earth dielectric

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A Model for the Current-Voltage Characteristic of Membrane/Electrolyte Junctions

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IEEE Sensors Journal 2025年第9期25卷 15270-15275页

作者： Mele, Leandro Julian Ashraful Alam, Muhammad Palestri, Pierpaolo Stanford University Department of Materials Science and Engineering StanfordCA94305 United States Purdue University School of Electrical and Computer Engineering West LafayetteIN47907 United States University of Modena and Reggio Emilia Dipartimento di Ingegneria "Enzo Ferrari" Modena41125 Italy

A model for the current-voltage characteristic of the junction between an ion-sensitive membrane and an electrolyte solution is derived and compared with numerical simulations of the Poisson-Nernst–Planck model for ion transport. The expression resembles that of a semiconductor p-n junction with a nonideality factor of 2. The nonideality correlated to the voltage drop in the electrolyte induced by the rearrangement of the counter-ions. © 2001-2012 IEEE.

关键词： Ion selective membranes

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A General Framework for Clustering and Distribution Matching with Bandit Feedback

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IEEE Transactions on Information Theory 2025年第3期71卷 2116-2139页

作者： Yavas, Recep Can Huang, Yuqi Tan, Vincent Y. F. Scarlett, Jonathan CNRS@CREATE DesCartes Program CREATE Tower 138602 Singapore National University of Singapore Department of Computer Science Queenstown119077 Singapore National University of Singapore School of Computing Department of Information Systems and Analytics Queenstown119077 Singapore National University of Singapore Department of Mathematics Department of Electrical and Computer Engineering Queenstown119077 Singapore Institute of Data Science National University of Singapore Department of Computer Science The Department of Mathematics Queenstown119077 Singapore

We develop a general framework for clustering and distribution matching problems with bandit feedback. We consider a K-armed bandit model where some subset of K arms is partitioned into M groups. Within each group, the random variable associated to each arm follows the same distribution on a finite alphabet. At each time step, the decision maker pulls an arm and observes its outcome from the random variable associated to that arm. Subsequent arm pulls depend on the history of arm pulls and their outcomes. The decision maker has no knowledge of the distributions of the arms or the underlying partitions. The task is to devise an online algorithm to learn the underlying partition of arms with the least number of arm pulls on average and with an error probability not exceeding a pre-determined value δ. Several existing problems fall under our general framework, including finding M pairs of arms, odd arm identification, and N-ary clustering of K arms belong to our general framework. We derive a non-asymptotic lower bound on the average number of arm pulls for any online algorithm with an error probability not exceeding δ. Furthermore, we develop a computationally-efficient online algorithm based on the Track-and-Stop method and Frank-Wolfe algorithm, and show that the average number of arm pulls of our algorithm asymptotically matches that of the lower bound. Our refined analysis also uncovers a novel bound on the speed at which the average number of arm pulls of our algorithm converges to the fundamental limit as δ vanishes. © 1963-2012 IEEE.

关键词： Random variables

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DFT analysis of the physical properties of direct band gap semiconducting double perovskites A2BIrCl6 (A = Cs, Rb;B = Na, K) for solar cells and optoelectronic applications

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RSC Advances 2025年第17期15卷 13643-13661页

作者： Tarekuzzaman, Md. Shahadath, Nazmul Montasir, Mufrat Alsalmi, O. Mia, M.H. Al-Dmour, Hmoud Rasheduzzaman, Md. Hasan, Md. Zahid Materials Research and Simulation Lab Department of Electrical and Electronic Engineering International Islamic University Chittagong Kumira Chittagong4318 Bangladesh Department of Physics College of Science Umm Al-Qura University Makkah21955 Saudi Arabia Department of Textile Engineering Northern University Bangladesh Uttara Dhaka Bangladesh Department of Computer and Communication Engineering International Islamic University Chittagong Kumira Chattogram4318 Bangladesh Department of Physics Faculty of Science Mutah University karak61710 Jordan

Double perovskite-based optoelectronic devices are gaining attention due to their unique characteristics, including a simple and stable crystal structure. This study employs density functional theory (DFT) with the full-potential linearized augmented plane-wave (FP-LAPW) method to investigate the structural, electronic, optical, mechanical, and thermodynamic properties of A2BIrCl6 (A = Cs, Rb;B = Na, K) double perovskite halides. The primary aim is to assess their potential applicability in optoelectronic devices and renewable energy technologies. The cubic stability of the predicted compounds was confirmed through the Goldsmith tolerance factor, octahedral factor, and a new tolerance factor. Additionally, to confirm their thermodynamic stability, we assessed the formation energy, binding energy, and phonon dispersion curves. We used the TB-mBJ potential to accurately predict the optoelectronic properties. The calculations of the electronic band structure indicated that the examined double perovskites exhibit a direct band gap semiconducting nature, with the following band gap values: 1.927 eV for Cs2NaIrCl6 1.991 eV for Cs2KIrCl6, 2.025 eV for Rb2NaIrCl6, and 2.102 eV for Rb2KIrCl6. The A2BIrCl6 (A = Cs, Rb;B = Na, K) compounds demonstrate impressive optical properties, including low reflectivity and high light absorption coefficients (104 cm−1) in the visible spectrum. Their spectral response extends from the visible to the UV range, making them ideal candidates for applications in solar cells and optoelectronic devices. The mechanical stability of the titled compounds was confirmed through the Born-Huang stability conditions based on their stiffness constants. The brittle nature of all the examined perovskites is confirmed by Pugh's ratio, Cauchy pressure, and Poisson's ratio. Finally, the Helmholtz free energy (F), internal energy (E), entropy (S), and specific heat capacity (Cv) are calculated based on the phonon density of states. © 2025 The Royal Society of C

关键词： Opacity

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Offsets Reconstruction Method for Clock Skew Measurement Over High-Jitter Communication

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SN computer science 2025年第5期6卷 1-14页

作者： Sastra, Nyoman Putra Saputra, Komang Oka Teng, Wei-Chung Study Program of Electrical Engineering Faculty of Engineering Udayana University Jalan Raya Kampus Bukit Jimbaran Bali Badung 80361 Indonesia Department of Computer Science and Information Engineering National Taiwan University of Science and Technology No. 43 Section 4 Keelung Rd Taipei 106 China

Measuring clock skew of devices over a network fully relies on the offsets, the differences between sending and receiving times. Offsets that shape a thick line are the most ideal one as their slope is directly the clock skew sought. When some outliers separate from the thick line due to higher delay jitter, current advanced approaches use the lower bound or the majority of offsets to derive accurate clock skew. However, outliers in offsets that shape parallel dotted lines, reduce the availability of offsets in the lower region, and scatter widely the offsets from their majority zone. These conditions drive the current skew estimation approaches to lose their accuracy. This paper then developed a new method, which reconstructs back the outliers into their origin positions, in order to provide ideal offsets for clock skew measurement. The experimental evaluations have demonstrated that the clock skew accuracy of dotted-lines offsets tampered by outliers was improved from 2.1 to 0.9 ppm by the proposed reconstruction method. For a broader purpose, the reconstruction method has been adjusted to be implemented also on non-dotted-lines offsets. The robustness of the proposed method for this case has also been exhibited by the very ideal reconstructed offsets that shape like a thick line. © The Author(s) 2025.

关键词： Clock skew Delay jitter Dotted lines Hough transform

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Thermal Characterization and Design of AlN/GaN/AlN HEMTs on Foreign Substrates

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第5期46卷 817-820页

作者： Kim, Seokjun Kim, Eungkyun Walwil, Husam Shoemaker, Daniel C. Encomendero, Jimy DeJarld, Matthew T. Tahhan, Maher B. Chumbes, Eduardo M. Laroche, Jeffrey R. Jena, Debdeep Xing, Huili G. Choi, Sukwon The Pennsylvania State University Department of Mechanical Engineering University ParkPA16082 United States Cornell University School of Electrical and Computer Engineering Department of Materials Science and Engineering IthacaNY14850 United States Raytheon Advanced Microelectronics Solutions AndoverMA01810 United States Raytheon Advanced Technologies TewksburyMA01876 United States

AlN/GaN/AlN high electron mobility transistors (HEMTs) offer enhanced carrier confinement and higher breakdown voltage than conventional AlGaN/GaN HEMTs. In this work, Raman thermometry was used to characterize the self-heating behavior of a single-finger AlN/GaN/AlN HEMT on 6H-SiC. A 3D finite element analysis model was created to optimize the thermal design of the device structure. Simulation results reveal that the optimal buffer layer thicknesses to minimize the channel temperature rise of AlN/GaN/AlN HEMTs on 6H-SiC and diamond substrates are ∼2 μm and ∼0.7 μm, respectively. Moreover, diamond substrate integration further enhances the thermal performance, achieving a ∼45% and ∼53% reduction in the device thermal resistance as compared to those of an AlN/GaN/AlN HEMT on 6H-SiC and an AlGaN/GaN HEMT on 4H-SiC, respectively. © 1980-2012 IEEE.

关键词： Gallium nitride

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NOMA-Based Multi-Cell VLC Systems With Optical Intelligent Reflecting Surface: Resource Allocation for Energy Efficiency Maximization

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IEEE Journal on Selected Areas in Communications 2025年第5期43卷 1691-1705页

作者： Liu, Zehao Yang, Fang Sun, Shiyuan Song, Jian Han, Zhu Department of Electronic Engineering Beijing100084 China State Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies Beijing100084 China Research Institute of Tsinghua University Shenzhen518057 China Tsinghua University Shenzhen International Graduate School Shenzhen518055 China University of Houston Department of Electrical and Computer Engineering HoustonTX77004 United States Kyung Hee University Department of Computer Science and Engineering Seoul446-701 Korea Republic of

Non-orthogonal multiple access (NOMA)-based visible light communication (VLC) is considered a promising technique for next generation high-speed wireless communications. The emerging optical intelligent reflecting surface (OIRS) offers significant benefits to the NOMA-based VLC, since it can mitigate signal blockage issues of VLC and improve its performance by manipulating channel qualities of users. This paper investigates the enhancement of OIRS to the NOMA-based multi-cell VLC system and explores the resource allocation problem for the energy efficiency (EE) maximization. To this end, the channel gains of the system are discussed, considering both the line-of-sight and OIRS-reflected paths. Then, the system model of NOMA-based VLC is established and the optimization problem is formulated to maximize the overall EE of the system. Next, the original optimization problem is decomposed into three sub-problems, which are solved by the proposed algorithms iteratively. Moreover, the simulation results demonstrate the convergence of the proposed algorithm and the enhancement in EE achieved by OIRS, as well as the influence of key parameters on the system performance, which can offer insights on resource allocation for NOMA-based VLC systems with OIRS. © 1983-2012 IEEE.

关键词： Resource allocation

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FDSOI-Based Reconfigurable FETs: A Ferroelectric Approach

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IEEE Transactions on Nanotechnology 2025年 24卷 277-281页

作者： Lee, Donghyeok Das, Suprem R. Kwon, Jiseok Chang, Jiwon Yonsei University Department of System Semiconductor Engineering Department of Materials Science and Engineering Seoul03722 Korea Republic of Kansas State University Department of Industrial and Manufacturing Systems Engineering Department of Electrical and Computer Engineering ManhattanKS66506 United States The Catholic University of Korea School of Information Communications and Electronic Engineering Gyeonggi-do14662 Korea Republic of

In this study, we propose ferroelectric-based reconfigurable field-effect transistors (FeRFETs) that utilizes the structure of a fully depleted silicon-on-insulator field-effect transistors (FDSOI FETs). In FeRFETs, the non-volatile and reconfigurable electrostatic doping facilitated by ferroelectric enables type conversion. Through the TCAD simulations calibrated with the experimental data, we confirm a reconfigurable high doping level (> 1×1021 cm-3), a clear type conversion and highly tunable performance in FeRFETs. It is also found that carefully tailoring coercive field (EC) is important to maximize the performance of FeRFETs. © 2002-2012 IEEE.

关键词： Reconfigurable hardware

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Visible-Light-Driven Photocatalytic Carbon-Carbon Coupling Reaction under Atmospheric Temperature and Pressure Conditions Using Hybrid Cu2O-Pd Nanostructures

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ACS Applied materials and Interfaces 2025年第18期17卷 26651-26660页

作者： Addanki Tirumala, Ravi Teja Gyawali, Sunil Le, Tien Kumar, Shivam Tan, Susheng Wang, Bin Bristow, Alan D. Andiappan, Marimuthu Department of Chemical Biological and Materials Engineering University of South Florida TampaFL33620 United States School of Sustainable Chemical Biological and Materials Engineering University of Oklahoma NormanOK73019 United States Center for Environmentally Beneficial Catalysis University of Kansas LawrenceKS66047 United States Department of Physics and Astronomy West Virginia University MorgantownWV26506-6315 United States Department of Electrical and Computer Engineering Petersen Institute of Nano Science and Engineering University of Pittsburgh PittsburghPA15260 United States

Metal-catalyzed carbon-carbon (C-C) coupling reactions are important in the chemical industry. These reactions are conventionally carried out through fossil-fuel-derived heat-driven high-temperature catalytic processes. In this contribution, we report that Pd nanoclusters decorated on the surface of quasi-spherical Cu2O (i.e., Cu2O-Pd) nanoparticles can successfully photocatalyze the C-C coupling reaction under ambient temperature and pressure conditions. Oxidative C-C homocoupling of phenylacetylene into diphenyl diacetylene is used as the probe reaction. Based on our results from transient reflection, density functional theory calculations, and photoreactor studies, we propose that the photocatalytic mechanism involves photon-excited electron transfer from Cu2O into Pd nanoclusters and the subsequent activation of the phenylacetylene molecules by these excited electrons in the Pd nanoclusters. The visible-light-driven photocatalytic C-C coupling approach demonstrated herein can decarbonize C-C coupling processes in the chemical industry since the visible light input can be supplied from renewable energy resources. © 2025 American Chemical Society.

关键词： Chemical industry

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Modeling of UV NLoS Communication Channels: From Atmospheric Scattering and Obstacle Reflection Perspectives

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IEEE Journal on Selected Areas in Communications 2025年第5期43卷 1590-1606页

作者： Wu, Tianfeng Yang, Fang Cao, Tian Cheng, Ling Chen, Yupeng Song, Jian Cheng, Julian Han, Zhu Department of Electronic Engineering Beijing100084 China State Key Laboratory of Widegap Semiconductor Optoelectronic Materials and Technologies Beijing100084 China Xidian University School of Telecommunications Engineering Xi’an710071 China University of the Witwatersrand School of Electrical and Information Engineering Johannesburg2000 South Africa Southern University of Science and Technology School of Microelectronics Shenzhen518055 China Tsinghua University Department of Electronic Engineering Beijing100084 China Tsinghua University Shenzhen International Graduate School Shenzhen518055 China The University of British Columbia School of Engineering KelownaBCV1V 1V7 Canada University of Houston Department of Electrical and Computer Engineering Houston77004 United States Kyung Hee University Department of Computer Science and Engineering Seoul446-701 Korea Republic of

As transceiver elevation angles increase from small to large, existing ultraviolet (UV) non-line-of-sight (NLoS) models encounter two challenges: 1) cannot estimate the channel characteristics of UV NLoS communication scenarios when there exists an obstacle in the overlap volume between the transmitter beam and the receiver field-of-view (FoV), and 2) cannot evaluate the channel path loss for the wide beam and wide FoV scenarios with existing simplified single-scattering path loss models. To address these challenges, a UV NLoS scattering model incorporating an obstacle was investigated, where the obstacle’s orientation angle, coordinates, and geometric dimensions were taken into account to approach actual application environments. Then, a UV NLoS reflection model was developed combined with specific geometric diagrams. Further, a simplified single-scattering path loss model was proposed with a closed-form expression. Finally, the proposed models were validated by comparing them with the Monte-Carlo photon-tracing model, the exact single-scattering model, and the latest simplified single-scattering model. Numerical results show that the path loss curves obtained by the proposed models agree well with those attained by related NLoS models under identical parameter settings, and avoiding obstacles is not always a good option for UV NLoS communications. Moreover, the accuracy of the proposed simplified model is superior to that of the existing simplified model for all kinds of transceiver FoV angles. © 1983-2012 IEEE.

关键词： Radio transceivers

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