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IEEE ELECTRON DEVICE LETTERS 1984年第7期5卷 251-253页

作者： CHOUDHURY, ANMM TABATABAIEALAVI, K FONSTAD, CG Department of Electrical Engineering and Computer Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA USA

For the first time (In,Ga)As/InP n-p-n heterojunction bipolar transistors (HJBT's) applicable to integrated circuits have been fabricated by triple ion implantation. The base has been formed by beryllium ion implantation and the collector by silicon ion implantation. The implants were made into an LPE-grown n-n (In,Ga)As/InP heterostructure on an n+-InP substrate. This inverted mode emitter-down heterojunction transistor structure demonstrates to a maximum current gain of 7 with no hysteresis in the characteristics. The ideality factors of the I B versus V BE , and I C versus V BE characterisitics with V CB = 0, are 1.25 and 1.08, respectively, indicating that the defect level in the herterojunction is low and that minority-carrier injection and diffusion is the dominant current flow mechanism.

关键词： Implants Indium phosphide Heterojunction bipolar transistors Application specific integrated circuits Bipolar integrated circuits Photonic band gap Ion implantation Substrates Gallium arsenide materials science and technology

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Norepinephrine changes behavioral state through astroglial purinergic signaling

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science (New York, N.Y.) 2025年第6748期388卷 769-775页

作者： Chen, Alex B. Duque, Marc Rymbek, Altyn Dhanasekar, Mahalakshmi Wang, Vickie M. Mi, Xuelong Tocquer, Loeva Narayan, Sujatha Legorreta, Emmanuel Marquez Eddison, Mark Yu, Guoqiang Wyart, Claire Prober, David A. Engert, Florian Ahrens, Misha B. Howard Hughes Medical Institute Janelia Research Campus Ashburn VA United States Department of Molecular and Cellular Biology Harvard University Cambridge MA United States Graduate Program in Neuroscience Harvard Medical School Boston MA United States Tianqiao and Chrissy Chen Institute for Neuroscience Division of Biology and Biological Engineering California Institute of Technology Pasadena CA United States Sorbonne Université Paris Brain Institute (Institut du Cerveau Institut National de la Santé et de la Recherche Médicale U1127 Centre National de la Recherche Scientifique Unité Mixte de Recherche 7225 Assistance Publique-Hôpitaux de Paris Campus Hospitalier Pitié-Salpêtrière Paris France Bradley Department of Electrical and Computer Engineering Virginia Polytechnic Institute and State University Arlington VA United States Present address: Allen Institute for Brain Science Seattle WA United States Department of Automation Tsinghua University Beijing China

Both neurons and glia communicate through diffusible neuromodulators;however, how neuron-glial interactions in such neuromodulatory networks influence circuit computation and behavior is unclear. During futility-induced behavioral transitions in the larval zebrafish, the neuromodulator norepinephrine (NE) drives fast excitation and delayed inhibition of behavior and circuit activity. We found that astroglial purinergic signaling implements the inhibitory arm of this motif. In larval zebrafish, NE triggers astroglial release of adenosine triphosphate (ATP), extracellular conversion of ATP into adenosine, and behavioral suppression through activation of hindbrain neuronal adenosine receptors. Our results suggest a computational and behavioral role for an evolutionarily conserved astroglial purinergic signaling axis in NE-mediated behavioral and brain state transitions and position astroglia as important effectors in neuromodulatory signaling.

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CHARACTERIZATION OF GaAs:O-Ge AND ZnSe:O-Ge HETEROINTERFACES GROWN ON OXYGEN-EXPOSED GaAs AND ZnSe SUBSTRATES.

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Journal of Vacuum science and Technology B: Microelectronics and Nanometer Structures 1983年第3期1卷 661-667页

作者： Jain, F.C. Electrical Engineering and Computer Science Department and The Institute of Materials Science University of Connecticut Storrs Connecticut 06268

The electronic behavior of p-n and isotype heterojunctions is shown to be significantly different when a chemisorbed oxygen/oxide layer is present at the heterointerface. Specifically, the characteristics of nGaAs:O-nGe and nZnSe:O-pGe devices are described. In nGaAs:O-nGe devices the authors have observed under dark and illuminated conditions a polarity inversion in V-I characteristics not normally expected of conventional nGaAs-nGe heterojunctions. The polarity inversion and other aspects of V-I and C-V characteristics of GaAs:O-Ge devices are consistently explained by a new band model involving the presence of localized inversion and/or accumulation layers at the heterointerface.

关键词： SEMICONDUCTOR DEVICES

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Classification with ensembles and case study on functional magnetic resonance imaging

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Digital Communications and Networks 2022年第1期8卷 80-86页

作者： Adnan OM.Abuassba Zhang Dezheng Hazrat Ali Fan Zhang Khan Ali Department of Computer Science Arab Open University-PalestineRamallahPalestine Department of Computer Science and Communication Engineering University of Science and Technology BeijingChina and Beijing Key Laboratory of Knowledge Engineering for Materials ScienceBeijing100083China Department of Electrical and Computer Engineering COMSATS University IslamabadAbbottabad CampusAbbottabadPakistan

The ensemble is a technique that strategically combines basic models to achieve better accuracy ***,combination methods,and selection topology are the main factors determining ensemble ***,it is a challenging task to design an efficient ensemble *** though numerous paradigms have been proposed to classify ensemble schemes,there is still much room for *** paper proposes a general framework for creating ensembles in the context of ***,the ensemble framework consists of four stages:objectives,data preparing,model training,and model *** is comprehensive to design diverse *** proposed ensemble approach can be used for a wide variety of machine learning *** validate our approach on real-world *** experimental results show the efficiency of the proposed approach.

关键词： Classification Ensemble learning Extreme learning machine

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Colossal switchable photocurrents in topological Janus transition metal dichalcogenides

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npj Computational materials 2021年第1期7卷 284-292页

作者： Haowei Xu Hua Wang Jian Zhou Yunfan Guo Jing Kong Ju Li Department of Nuclear Science and Engineering Massachusetts Institute of TechnologyCambridgeMAUSA Department of Electrical Engineering and Computer Science Massachusetts Institute of TechnologyCambridgeMAUSA Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridgeMAUSA

Nonlinear optical properties,such as bulk photovoltaic effects,possess great potential in energy harvesting,photodetection,rectification,*** enable efficient light–current conversion,materials with strong photo-responsivity are highly *** this work,we predict that monolayer Janus transition metal dichalcogenides(JTMDs)in the 1T′phase possess colossal nonlinear photoconductivity owing to their topological band mixing,strong inversion symmetry breaking,and small electronic bandgap.1T′JTMDs have inverted bandgaps on the order of 10 meV and are exceptionally responsive to light in the terahertz(THz)*** first-principles calculations,we reveal that 1T′JTMDs possess shift current(SC)conductivity as large as 2300 nmμA V^(−2),equivalent to a photo-responsivity of 2800 mA/*** circular current(CC)conductivity of 1T′JTMDs is as large as∼104 nmμA V^(−2).These remarkable photo-responsivities indicate that the 1T′JTMDs can serve as efficient photodetectors in the THz *** also find that external stimuli such as the in-plane strain and out-of-plane electric field can induce topological phase transitions in 1T′JTMDs and that the SC can abruptly flip their *** abrupt change of the nonlinear photocurrent can be used to characterize the topological transition and has potential applications in 2D optomechanics and nonlinear optoelectronics.

关键词： topological transition nonlinear

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Reconfigurable assembly of self-healing stretchable transistors and circuits for integrated systems

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Nature Electronics 2025年 1-11页

作者： Jang, Jaepyo Choo, Hyongsuk Lee, Sangkyu Song, Jihyang Park, Kyuha Yoon, Jiyong Seong, Duhwan An, Soojung Jung, Hyunjin Ju, Jaewon Kang, Juncheol Kang, Joohoon Kim, In Soo Shin, Mikyung Park, Jin-Hong Son, Donghee Department of Electrical and Computer Engineering Sungkyunkwan University Suwon South Korea Center for Neuroscience Imaging Research Institute for Basic Science (IBS) Suwon South Korea Department of Artificial Intelligence System Engineering Sungkyunkwan University Suwon South Korea Department of Intelligent Precision Healthcare Convergence Sungkyunkwan University (SKKU) Suwon South Korea School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon South Korea KIST-SKKU Carbon-Neutral Research Center Sungkyunkwan University (SKKU) Suwon South Korea Nanophotonics Research Center Korea Institute of Science and Technology Seoul South Korea Department of Biomedical Engineering Sungkyunkwan University (SKKU) Suwon South Korea SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon South Korea Department of Semiconductor Convergence Engineering Sungkyunkwan University (SKKU) Suwon South Korea

Self-healing soft electronic devices that can recover their mechanical and electrical properties are of use in the development of long-term wearable and implantable electronic systems. However, creating self-healing and stretchable integrated circuits is challenging due to the absence of suitable materials and sufficiently customizable assembly technology. Here we report a reconfigurable and scalable assembly method for self-healing, stretchable, active-type devices, including thin-film transistors, active-matrix arrays and logic gates. The self-healing, stretchable, thin-film transistor can easily be fabricated by transfer-printing of intrinsically soft constituent films: an insulating self-healing polymer for the gate dielectric, a semiconducting nanocomposite for the active channel and a carbon-nanotube-embedded composite for the electrodes. Our assembly method allows the thin-film transistors to be extended to wearable and implantable 5 × 5 active-matrix, soft and self-healing transistor arrays. These arrays can multiplex pressure data recorded from a 5 × 5 tactile sensor array, provide feedback control to an array of soft and self-healing optoelectronic pixels, and maintain electrical performance even when implanted in the subcutaneous tissue of a rodent model. To demonstrate user-on-demand functionality, we combined, disassembled and recombined thin-film transistors and load resistors into three different types of logic gates (inverter, NAND and NOR circuits). © The Author(s), under exclusive licence to Springer Nature Limited 2025.

关键词： NAND circuits

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MICROCHANNEL SPATIAL LIGHT-MODULATOR

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OPTICS LETTERS 1978年第5期3卷 196-198页

作者： WARDE, C FISHER, AD COCCO, DM BURMAWI, MY Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139

A sensitive, high-speed, optically addressed spatial light modulator is being developed for real-time optical data-processing applications involving low-level-control light signals. This device is expected to have a sensitivity of better than 10 −3 μ J/cm 2 , a framing rate of about 1 kHz, and a spatial resolution of approximately 20 line pairs/mm. The time response, sensitivity, spatial resolution, and other operating characteristics are being studied in a first-generation device; preliminary results are reported.

关键词： Dielectric mirrors Image intensifiers Optically addressed spatial light modulators Phase contrast Spatial light modulators Spatial resolution

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PB1-XSNXTE-PBTE1-YSEY LATTICE-MATCHED BURIED HETEROSTRUCTURE LASERS WITH CW SINGLE-MODE OUTPUT

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ELECTRON DEVICE LETTERS 1980年第5期1卷 75-78页

作者： KASEMSET, D ROTTER, S FONSTAD, CG Department of Electrical Engineering and Computer Science Center for Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA USA

The first successful realization of buried heterostructure diode lasers in the PbSnTe/PbTeSe system is reported. This has resulted in routine cw operation above 80 K with threshold currents as low as 60 mA in 5 µm wide stripe lasers. CW operation has been achieved to 120K. In addition, these lasers operate in the fundamental transverse mode up to as much as four times threshold.

关键词： Laser modes Threshold current Semiconductor lasers Temperature Substrates Heat sinks Laser theory Pump lasers materials science and technology Waveguide junctions

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MIT MODERN OPTICS PROJECT LABORATORY

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IEEE TRANSACTIONS ON EDUCATION 1980年第2期23卷 105-108页

作者： WARDE, C Department of Electrical Engineering and Computer Science and the Center for Materials Science and Engineering Massachusetts Institute of Technology Cambridge MA USA

This paper describes the Modern Optics Project Laboratory course offered within the department of electrical engineering and computer science at the Massachusetts Institute of Technology (M.I.T.) With a combination of lectures, laboratory exercises, and projects, this course provides the students with a broad exposure to the principles of modern optics and quantum electronics, and gives them an opportunity to develop basic experimental skills in optics.

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Anisotropic Exchange Spin Model to Investigate the Curie Temperature Dispersion of Finite-Size L10-FePt Magnetic Nanoparticles

arXiv

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arXiv 2025年

作者： Ochiai, Kohei Tsuyama, Tomoyuki Shimizu, Sumera Zhang, Lei Watanabe, Jin Kudo, Fumito Zhu, Jian-Gang Okuno, Yoshishige Resonac Corporation Research Center for Computational Science and Informatics 8 Ebisu-cho Kanagawa-ku Kanagawa. Yokohama221-8517 Japan Resonac Hard Disk Corporation Research & Development Center 5-1 Yawatakaigan-dori Chiba Ichihara290-0067 Japan Data Storage Systems Center Carnegie Mellon University PittsburghPA15213 United States Electrical and Computer Engineering Department Carnegie Mellon University PittsburghPA15213 United States Materials Science and Engineering Department Carnegie Mellon University PittsburghPA15213 United States

We developed an anisotropic spin model that accounts for magnetic anisotropy and evaluated the Curie temperature (Tc) dispersion due to finite size effects in L10-FePt nanoparticles. In heat-assisted magnetic recording (HAMR) media, a next-generation magnetic recording technology, high-density recording is achieved by locally heating L10-FePt nanoparticles near their Tc and rapidly cooling them. However, variations in Tc caused by differences in particle size and shape can compromise recording stability and areal density capacity, making the control of Tc dispersion critical. In this study, we constructed atomistic LLG models to explicitly incorporate the spin exchange anisotropy of L10-FePt, based on parameters determined by first-principles calculations. Using this model, we evaluated the impact of particle size on Tc dispersion. As a result, (1) the Tc dispersion critical to the performance of HAMR can be reproduced, whereas it was previously underestimated by isotropic models and (2) approximately 70% of the experimentally observed Tc dispersion can be attributed to particle size effects. This research highlights the role of exchange anisotropy in amplifying finite-size effects and underscores the importance of size control in HAMR media. Copyright © 2025, The Authors. All rights reserved.

关键词： Curie temperature

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