Antennas fabricated with traditional manufacturing methods typically carry redundant weight and are limited in 3D architecture complexity. Current additive manufacturing (AM) methods also lacks the capability to const...
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Batik is an Indonesian world cultural heritage. Batik consists of many kinds of patterns depending on where the batik comes from, Batik-making techniques continue to develop along with technology development. Among th...
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We report the experimentally retrieved anisotropic optical permittivity of several MXenes which indicate that these materials exhibit a hyperbolic dispersion relationship. Additionally, we describe the thickness depen...
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We report the experimentally retrieved anisotropic optical permittivity of several MXenes which indicate that these materials exhibit a hyperbolic dispersion relationship. Additionally, we describe the thickness depen...
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Synchronous reluctance (SynR) motor technology is promising to realize rare-earth material-free electric machines. However, structural challenges limit operation speed and subsequently power density compared to machin...
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This paper presents results of investigations on the reproducibility of the properties of important refractory matrix composites used in aerospace industry. The method of fabrication was electroconsolidation, which wa...
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Conventional power combiners based on coplanar or microstrip transmission lines suffer from high loss at D band or higher frequencies. By contrast, power combiners based on substrate-integrated waveguides (SIWs) can h...
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ISBN:
(数字)9798350375046
ISBN:
(纸本)9798350375053
Conventional power combiners based on coplanar or microstrip transmission lines suffer from high loss at D band or higher frequencies. By contrast, power combiners based on substrate-integrated waveguides (SIWs) can have low loss, high power capacity, and minimum crosstalk. Recently, aD-band traveling-wave amplifier (TWA) was demonstrated by embedding transistors in the middle of an SIW as voltage probes to radiate power into the SIW. The voltage probes were realized through hot through-substrate vias (TSVs), which were not supported by all semiconductor foundries. As an alternative, this work embeds transistors along the sidewalls of an SIW as current probes through standard TSVs that are grounded to the backside metal layer. This approach combines twice as many transistors per unit length of the SIW without either hot TSVs or cross-SIW interconnects. This results in at least 5-dB-higher output power compared to the previously demonstrated TWA with voltage probes. The measured output power of the present TWA at 140 GHz is at least 19 dBm, limited by the available input power. The measured output power agrees with that simulated and simulation indicates an output power of 23 dBm under 1-dB gain compression. In this proof of concept, the demonstration is based on monolithic integration of unit-cell transistors and an SIW. In the future, larger transistors in a multi-stage amplifier can be used to drive each current probe for a TWA of higher gain, output power, and efficiency. The present concept of efficient power combining is equally applicable to heterogeneous integration and is material- and technology-agnostic. For example, transistors can be fabricated in a Si chiplet before integration with an SIW fabricated in a Si interposer.
We demonstrate a large in-situ strain tuning of cavity coupled photoluminescence of nanofabricated optical cavities integrated with a monolayer WSe2 using a piezo-strain device capable of operating at cryogenic temper...
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Capital market transactions provide an opportunity for investors to acquire ownership of company shares and capital gains, as well as dividends. However, alongside the benefits, there are risks of capital loss and liq...
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Contrary to the common belief that the light-induced halide ion segregation in a mixed halide alloy occurs within the illuminated area,we find that the Br ions released by light are expelled from the illuminated area,...
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Contrary to the common belief that the light-induced halide ion segregation in a mixed halide alloy occurs within the illuminated area,we find that the Br ions released by light are expelled from the illuminated area,which generates a macro/mesoscopic size anion ring surrounding the illuminated area,exhibiting a photoluminescence *** intriguing phenomenon can be explained as resulting from two counter-balancing effects:the outward diffusion of the light-induced free Br ions and the Coulombic force between the anion deficit and surplus *** after removing the illumination,the macro/mesoscopic scale ion displacement results in a built-in voltage of about 0.4 V between the ring and the ***,the displaced anions return to the illuminated area,and the restoring force leads to a damped ultra-low-frequency oscillatory ion motion,with a period of about 20-30 h and lasting over 100 *** finding may be the first observation of an ionic plasma oscillation in *** understanding and controlling the"ion segregation"demonstrate that it is possible to turn this commonly viewed"adverse phenomenon"into novel electronic applications,such as ionic patterning,self-destructive memory,and energy storage.
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