Recurrent Neural Networks (RNNs) are commonly used in data-driven approaches to estimate the Remaining Useful Lifetime (RUL) of power electronic devices. RNNs are preferred because their intrinsic feedback mechanisms ...
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Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security *** traditional systems rely on separate se...
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Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security *** traditional systems rely on separate sensors for different lighting conditions,TMDs can absorb light across a broad-spectrum *** this study,a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was *** bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor *** WS2-based thin-film transistors(TFTs)exhibit high average mobility,excellent Ion/Ioff,and uniform electrical *** optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W1(at a wavelength of 405 nm)owing to the photogating ***,red,green,blue,and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were *** proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing,which could lead to a range of new opportunities in various applications,including night vision,pedestrian detection,various surveillance,and security systems.
Global trading is undergoing significant changes, necessitating modifications to the trading strategies. This study presents a newly developed cloud-based trading strategy that uses Amazon Web Services (AWS), machine ...
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The extensive exploration of energy conversion harvested from the environment into electricity is recently driven by the significant demand to power off-grid electronics,particularly Internet-of-Things(IoT)*** highlig...
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The extensive exploration of energy conversion harvested from the environment into electricity is recently driven by the significant demand to power off-grid electronics,particularly Internet-of-Things(IoT)*** highlight previews the latest advance of a charging-free thermally regenerative electrochemical cycle(TREC)for continuous electricity generation from solar heat and darkness with the aid of dual-mode thermal *** a spontaneous all-day electricity generation with high power and efficiency shows great potential for powering a wide range of distributed electronics for IoT and other applications.
A technique for embedding fibres with semiconductor devices produces defect-free strands that are hundreds of metres long. Garments woven with these threads offer a tantalizing glimpse of the wearable electronics of t...
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A technique for embedding fibres with semiconductor devices produces defect-free strands that are hundreds of metres long. Garments woven with these threads offer a tantalizing glimpse of the wearable electronics of the future.
Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombinat...
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Trap-mediated recombination influences the performance of a wide range of electronic devices. The well-known Shockley-Read-Hall (SRH) expression for inorganic semiconductors is often invoked to describe the recombination rate in organic materials, although without a clear understanding of how its parameters relate to the underlying material properties or how it should be modified to account for the finite lifetime of exciton intermediates in, for example, the doped emissive layer of an organic light-emitting diode (OLED). Here, we formalize SRH recombination for organic semiconductors based on diffusive trapping and Langevin recombination. We show that including the exciton state suppresses the recombination rate in host-guest systems with type II energy level alignment whenever the interfacial gap between the host and guest molecular orbitals is comparable to the exciton energy. These results quantify the balance between bimolecular and trap-mediated recombination in doped OLED emissive layers, and indicate that devices with type II host-guest pairings can, in principle, beat the thermodynamic limit of their neat guest counterparts.
Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While vari...
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Magnetic Weyl semimetals are promising materials for spintronic applications due to their unique properties in bulk and surface topological states and the rich interplay between band topology and magnetism. While various nontraditional magneto-electrical effects have been studied in magnetic Weyl semimetals, transport properties related to spin-polarized tunneling from these materials remain less explored. In this work, we developed fully epitaxial magnetic tunnel junctions (MTJs) based on a ferromagnetic Weyl semimetal Co2MnGa. By growing Co2MnGa films under different conditions, we fabricated a series of MTJs possessing different degrees of order in the semimetal electrodes and compared their tunneling magnetoresistance (TMR). We find that the TMR becomes enhanced with the improvement of the chemical ordering of Co2MnGa. Our results reveal the relationship between the spin tunneling in MTJs and the chemical order of the Co2MnGa electrode and provide insights on further enhancing TMR via semimetal engineering.
Understanding the thermodynamic properties of electrolyte solutions is of vital importance for a myriad of physiological and technological *** mean activity coefficientγ±is associated with the deviation of an el...
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Understanding the thermodynamic properties of electrolyte solutions is of vital importance for a myriad of physiological and technological *** mean activity coefficientγ±is associated with the deviation of an electrolyte solution from its ideal behavior and may be obtained by combining the Debye-Hückel(DH)and Born(B)***,the DH and B equations depend on the concentration and temperature-dependent static permittivity of the solutionεr(c,T)and the size of the solvated ions ri,whose experimental data is often not ***,we use a combination of molecular dynamics and density functional theory to predictεr(c,T)and ri,which enables us to apply the DH and B equations to any technologically relevant aqueous and nonaqueous electrolyte at any concentration and temperature of interest.
Micro or submicron scale light-emitting diodes(μLEDs)have been extensively studied recently as the next-generation display *** is desired that μLEDs exhibit high stability and efficiency,submicron pixel size,and pot...
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Micro or submicron scale light-emitting diodes(μLEDs)have been extensively studied recently as the next-generation display *** is desired that μLEDs exhibit high stability and efficiency,submicron pixel size,and potential monolithic integration with Si-based complementary metal-oxide-semiconductor(CMOS)*** such uLEDs,however,has remained a daunting *** polar nature of Ill-nitrides causes severe wavelength/color instability with varying carrier concentrations in the active *** etching-induced surface damages and poor material quality of high indium composition InGaN quantum wells(QWs)severely deteriorate the performance of uLEDs,particularly those emitting in the green/red *** we report,for the first time,μLEDs grown directly on Si with submicron lateral *** μLEDs feature ultra-stable,bright green emission with negligible quantum-confined Stark effect(QCSE).Detailed elemental mapping and numerical calculations show that the QCSE is screened by introducing polarization doping in the active region,which consists of InGaN/AlGaN QWs surrounded by an AlGaN/GaN shell with a negative Al composition gradient along the *** comparison with conventional GaN barriers,AlGaN barriers are shown to effectively compensate for the tensile strain within the active region,which significantly reduces the strain distribution and results in enhanced indium incorporation without compromising the material *** study provides new insights and a viable path for the design,fabrication,and integration of high-performance μLEDs on Si for a broad range of applications in on-chip optical communication and emerging augmented reality/mixed reality devices,and so on.
Broadband light detection and sensing are widely applied in modern *** a promising candidate for next-generation two-dimensional(2D)optoelectronic material,bismuth oxyselenide(Bi_(2)O_(2)Se)nanoplates exhibit many pro...
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Broadband light detection and sensing are widely applied in modern *** a promising candidate for next-generation two-dimensional(2D)optoelectronic material,bismuth oxyselenide(Bi_(2)O_(2)Se)nanoplates exhibit many prospects in the application of visible light detection due to their peculiar *** this work,we report the photodetection performance of single-crystal 2D Bi_(2)O_(2)Se nanoplates grown on SiO_(2)based on a ternary-alloy growth model by utilizing chemical vapor deposition(CVD).The Bi_(2)O_(2)Se nanoplates were found to have an even and uniform square shape with side lengths up to 15μm and an approximate thickness of 15 nm.A visible-light photodetector was fabricated based on a CVD-grown Bi_(2)O_(2)Se nanoplate,and characterized by a set of illumination experiments using a 400 nm laser at temperatures ranging from 77 to 370 *** device exhibited superior performance at the temperature of 77 K,with a responsivity of 523 A/W,a specific detectivity of 1.37×10^(11)Jones,a response time of 0.2175 ms,an external quantum efficiency of 162,119.44%,resulting in high-quality and fullcolor imaging in the visible *** results indicate that the single-crystalline Bi_(2)O_(2)Se nanoplates have excellent potential in broadband photodetection and non-cryogenic imaging.
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