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11th Nuclear Plant Instrumentation, Control, and Human-Machine Interface Technologies, NPIC and HMIT 2019

作者： Da Silver, Thiago H. Butler, Drew Biaggne, Austin Kandadai, Nirmala Subbaraman, Harish Daw, Joshua Li, Lan Micron School of Materials Science and Engineering Boise State University 1910 University Drive BoiseID83725 United States Department of Electrical and Computer Engineering Boise State University 1910 University Drive BoiseID83725 United States High Temperature Test Laboratory Idaho National Laboratory 2525 Fremont Avenue Idaho FallsID83415 United States Center for Advanced Energy Studies 995 University Blvd Idaho FallsID83401 United States

ISBN: (纸本)9780894487835

Density functional theory-based calculations and ab-initio molecular dynamics have been performed in order to study the effects of dopants and radiation defects on the structures and optical properties of amorphous silica in comparison to sapphire - another high-temperature and radiation-resistant material. Out studies focused on oxygen deficient centers ODCs (a typical point defect due to radiation damage) and fluorine F dopants. Optical properties depend on dielectric function, calculated from the charge density of the material. With real- and imaginary-part dielectric functions, all the other optical properties, such as refractive index, energy loss function, and absorption coefficient, could be derived. Optical properties of amorphous silica and sapphire become anisotropic with either ODC or F dopants. They contribute characteristic peaks to the optical spectra and induce minor peaks in the low photon energy ranges. Static optical coefficients significantly increase with F dopants, but they might remain or slightly increase with ODC. Our results suggest that adding dopants can improve the optical properties of the materials and potentially inhabit the formation of high-temperature and radiation defects, resulting in an enhancement of the light signal in their transmitted spectra. Controlling dopant concentration also plays a crucial role, because a high dopant concentration could cause a structural distortion and degrade the optical performance of the material. © 2018 Westinghouse Electric Company LLC All Rights Reserved

关键词： Sapphire

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Evaluation of the vortex core size in gate-tunable Josephson junctions in Corbino geometry

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Physical Review B 2020年第4期102卷 045301-045301页

作者： Sadashige Matsuo Mizuki Tateno Yosuke Sato Kento Ueda Yuusuke Takeshige Hiroshi Kamata Joon Sue Lee Borzoyeh Shojaei Christopher J. Palmstrøm Seigo Tarucha Department of Applied Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan JST PRESTO 4-1-8 Honcho Kawaguchi Saitama 332-0012 Japan Center for Emergent Matter Science RIKEN 2-1 Hirosawa Wako-shi Saitama 351-0198 Japan California NanoSystems Institute University of California Santa Barbara California 93106 USA Materials Department University of California Santa Barbara California 93106 USA Electrical and Computer Engineering University of California Santa Barbara California 93106 USA

We report on electron transport in gate-tunable Corbino-geometry Josephson junctions (CJJs) fabricated from an epitaxially grown Aluminum (Al) superconductor on an InAs quantum well. We observed that a supercurrent can be tuned by the gate voltage and sweeping an out-of-plane magnetic field initiates a sudden rise in the electrical resistance. From the analysis using a theoretical model for flow resistance due to Josephson vortices in CJJs, we evaluate the vortex core size, which substantially depends on the carrier density and temperature. These results will be subsequently utilized for future operations of the Josephson vortices in CJJs.

关键词： Transport phenomena Vortices in superconductors Josephson junctions Quantum wells

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Adsorption-Controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

arXiv

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arXiv 2020年

作者： Vogt, Patrick Hensling, Felix V.E. Azizie, Kathy Chang, Celesta S. Turner, David Park, Jisung McCandless, Jonathan P. Paik, Hanjong Bocklund, Brandon J. Hoffman, Georg Bierwagen, Oliver Jena, Debdeep Xing, Huili G. Mou, Shin Muller, David A. Shang, Shun-Li Liu, Zi-Kui Schlom, Darrell G. Department of Materials Science and Engineering Cornell University IthacaNY14853 United States School of Applied and Engineering Physics Cornell University IthacaNY14853 United States Air Force Research Laboratory Materials and Manufacturing Directorate Wright Patterson AFB OH45433 United States Azimuth Corporation 2970 Presidential Drive Suite 200 FairbornOH45324 United States School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States Cornell University IthacaNY14853 United States Department of Materials Science and Engineering Pennsylvania State University University ParkPA16802 United States Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5–7 Berlin10117 Germany Kavli Institute at Cornell for Nanoscale Science IthacaNY14853 United States Leibniz-Institut für Kristallsüchtung Max-Born-Str. 2 Berlin12489 Germany

This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 μm hr−1 with excellent crystallinity in an adsorption-controlled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 μm hr−1 for Ga2O3/Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 μm. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. Copyright © 2020, The Authors. All rights reserved.

关键词： Molecular beam epitaxy

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Resonant infrared matrix-assisted pulsed laser evaporation of hybrid perovskites

Resonant infrared matrix-assisted pulsed laser evaporation o...

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Novel Optical materials and Applications, NOMA 2018

作者： Stiff-Roberts, Adrienne D. Mitzi, David B. Barraza, E. Tomas Dunlap-Shohl, Wiley A. Department of Electrical and Computer Engineering Duke University DurhamNC27708 United States Department of Mechanical Engineering and Materials Science Duke University DurhamNC27708 United States Department of Chemistry Duke University DurhamNC27708 United States

Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP), CH3NH3PbI3, and solar cell performance was demonstrated, thereby establishing the potential... 详细信息

ISBN: (纸本)9781943580439

关键词： Metal halides

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RETRACTED ARTICLE: Solar system treatment with incorporating nanomaterial within the absorber tube employing turbulator

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Applied Nanoscience 2022年第4期13卷 3107-3107页

作者： Ajour, Mohammed N. Rawa, Muhyaddin J. H. Milyani, Ahmad H. Li, Meicheng Selim, Mahmoud M. Center of Research Excellence in Renewable Energy and Power Systems King Abdulaziz University Jeddah Saudi Arabia Department of Electrical and Computer Engineering King Abdulaziz University Jeddah Saudi Arabia School of New Energy New Energy Materials and Devices Center North China Electric Power University Beijing China Department of Mathematics Al-Aflaj College of Science and Humanities Studies Prince Sattam Bin Abdulaziz University Al-Aflaj Saudi Arabia Department of Mathematics Suez Faculty of Science Suez University Suez Egypt

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Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

arXiv

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arXiv 2020年

作者： Chatterjee, Shouvik Khalid, Shoaib Inbar, Hadass S. Guo, Taozhi Chang, Yu-Hao Young, Elliot Fedorov, Alexei V. Read, Dan Janotti, Anderson Palmstrøm, Christopher J. Department of Electrical & Computer Engineering University of California Santa BarbaraCA93106 United States Department of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai400005 India Department of Physics and Astronomy University of Delaware NewarkDE19716 United States Department of Materials Science and Engineering University of Delaware NewarkDE19716 United States Materials Department University of California Santa BarbaraCA93106 United States Department of Physics University of California Santa BarbaraCA93106 United States Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA94720 United States School of Physics and Astronomy Cardiff University CardiffCF24 3AA United Kingdom California NanoSystems Institute University of California Santa BarbaraCA93106 United States

Controlling electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a novel, two-dimensional, interfacial hole gas and is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultra-thin limit. Our work lays out a general strategy of utilizing confined thin film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously, provides insights into its origin. Copyright © 2020, The Authors. All rights reserved.

关键词： III-V semiconductors

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Limits to surface-enhanced Raman scattering near arbitrary-shape scatterers

arXiv

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arXiv 2019年

作者： Michon, Jérôme Benzaouia, Mohammed Yao, Wenjie Miller, Owen D. Johnson, Steven G. Department of Materials Science and Engineering Massachusetts Institute of Technology CambridgeMA United States Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA United States Department of Applied Physics Yale University New HavenCT United States Department of Mathematics Massachusetts Institute of Technology CambridgeMA United States

The low efficiency of Raman spectroscopy can be overcome by placing the active molecules in the vicinity of scatterers, typically rough surfaces or nanostructures with various shapes. This surface-enhanced Raman scattering (SERS) leads to substantial enhancement that depends on the scatterer that is used. In this work, we find fundamental upper bounds on the Raman enhancement for arbitrary-shaped scatterers, depending only on its material constants and the separation distance from the molecule. According to our metric, silver is optimal in visible wavelengths while aluminum is better in the near-UV region. Our general analytical bound scales as the volume of the scatterer and the inverse sixth power of the distance to the active molecule. Numerical computations show that simple geometries fall short of the bounds, suggesting further design opportunities for future improvement. For periodic scatterers, we use two formulations to discover different bounds, and the tighter of the two always must apply. Comparing these bounds suggests an optimal period depending on the volume of the scatterer. Copyright © 2019, The Authors. All rights reserved.

关键词： Molecules

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A Gd@C82-based single molecular electret device

arXiv

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arXiv 2020年

作者： Zhang, Kangkang Wang, Cong Zhang, Minhao Bai, Zhanbin Xie, Fangfang Tan, Yuanzhi Guo, Yilv Hu, Kuo-Juei Cao, Lu Zhang, Shuai Tu, Xuecou Kang, Lin Chen, Jian Wu, Peiheng Wang, Xuefeng Wang, Jinlan Liu, Junming Wang, Baigeng Wang, Guanghou Xie, Suyuan Ji, Wei Shi, Su-Fei Reed, M.A. Song, Fengqi National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures School of Physics Nanjing University Nanjing210093 China Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices Department of Physics Renmin University of China Beijing100872 China State Key Laboratory of Physical Chemistry of Solid Surfaces Department of Chemistry College of Chemistry and Chemical Engineering Xiamen University Xiamen361005 China School of Physics Southeast University Nanjing211189 China School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210023 China Department of Chemical and Biological Engineering Rensselaer Polytechnic Institute TroyNY12180 United States Department of Electrical Computer and Systems Engineering Rensselaer Polytechnic Institute TroyNY12180 United States Departments of Applied Physics and Electrical Engineering Yale University New HavenCT06520 United States Nanjing211805 China

Single molecular electrets exhibiting single‐molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, although it is controversial because of the poor stability of single molecular electric dipoles. Here we study the single molecular device of Gd@C82, where the encapsulated Gd atom forms a charge center, and we have observed a gate-controlled switching behavior between two sets of single-electron-transport stability diagrams. The switching is operated in a hysteresis loop with a coercive gate field of around 0.5 V/nm. Theoretical calculations have assigned the two conductance diagrams to corresponding energy levels of two states that the Gd atom is trapped at two different sites of the C82 cage, which possess two different permanent electrical dipole orientations. The two dipole states are stabilized by the anisotropic energy and separated by a transition energy barrier of 70 meV. Such switching is then accessed to the electric field driven reorientation of individual dipole while overcoming the barriers by the coercive gate field, and demonstrates the creation of a single molecular electret. Copyright © 2020, The Authors. All rights reserved.

关键词： Switching

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RETRACTED ARTICLE: Solar radiation impact on ferrofluid convection with applying electric field

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Applied Nanoscience 2022年第4期13卷 3111-3111页

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Nonreciprocal hyperbolic propagation over moving metasurfaces

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Physical Review B 2019年第4期99卷 045407-045407页

作者： Yarden Mazor Andrea Alù Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 USA Photonics Initiative Advanced Science Research Center City University of New York New York New York 10031 USA Physics Program Graduate Center City University of New York New York New York 10026 USA Department of Electrical Engineering City College of New York New York New York 10031 USA

Hyperbolic propagation offers exciting opportunities in nanophotonics, from subdiffraction imaging to enhanced local density of states. This transport regime is typically induced by strong modulation of conductivity, i.e., with alternating metallic and dielectric material properties. Here, we analyze a moving impedance surface, showing that suitably tailored homogeneous metasurfaces can support one-way hyperbolic propagation when in motion, adding nonreciprocity to hyperbolic propagation phenomena, and without suffering from nonlocal effects stemming from discretization or finite granularity of the surface.

关键词： Electromagnetism Metamaterials Photonics

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