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arXiv 2020年

作者： Li, Peining Hu, Guangwei Dolado, Irene Tymchenko, Mykhailo Qiu, Cheng-Wei Alfaro-Mozaz, Francisco Javier Casanova, Felix Hueso, Luis E. Liu, Song Edgar, James H. Vélez, Saül Alu, Andrea Hillenbrand, Rainer Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan430074 China CIC nanoGUNE BRTA Donostia-San Sebastián20018 Spain Department of Electrical and Computer Engineering National University of Singapore 4 Engineering Drive 3 Singapore117583 Singapore Advanced Science Research Center City University of New York New York10031 United States IKERBASQUE Basque Foundation for Science Bilbao48013 Spain Tim Taylor Dept. of Chemical Engineering Kansas State University ManhattanKS66506 United States Department of Materials ETH Zürich Zürich8093 Switzerland CIC NanoGUNE BRTA UPV EHU Donostia-San Sebastián20018 Spain

Polaritons - coupled excitations of photons and dipolar matter excitations - can propagate along anisotropic metasurfaces with either hyperbolic or elliptical dispersion. At the transition from hyperbolic to elliptical dispersion (corresponding to a topological transition), various intriguing phenomena are found, such as an enhancement of the photonic density of states, polariton canalization and hyperlensing. Here we investigate theoretically and experimentally the topological transition and the polaritonic coupling of deeply subwavelength elements (structure sizes ∼ λ/100, λ being the free-space wavelength) in a uniaxial infrared-phononic metasurface, a grating of hexagonal boron nitride (hBN) nanoribbons. By hyperspectral infrared nanoimaging, we observe, for the first time, a synthetic transverse optical phonon resonance (that is, the strong collective near-field coupling of the nanoribbons) in the middle of the hBN Reststrahlen band, yielding a topological transition from hyperbolic to elliptical dispersion. We further visualize and characterize the spatial evolution of a deeply subwavelength canalization mode (a spatial confinement of about 300 nm, ∼ λ/22) near the transition frequency, which is a collimated polariton that is the basis for hyperlensing and diffraction-less propagation. Our results provide fundamental insights into the role of polaritonic near-field coupling in metasurfaces for creating topological transitions and polariton canalization. Copyright © 2020, The Authors. All rights reserved.

关键词： Photons

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Open-source matlab-based graphical user interface (gui) for computer control of microscopes using μmanager

arXiv

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arXiv 2019年

作者： Pham, Quang Long Chege, David Dijamco, Timothy Surblyte, Migle Naik, Akshay Campbell, Kolawole Tong, Nhat-Anh-Nguyen Voronov, Roman Otto H. York Department of Chemical and Materials Engineering Newark College of Engineering New Jersey Institute of Technology NewarkNJ07102 United States Department of Electrical and Computer Engineering Newark College of Engineering New Jersey Institute of Technology NewarkNJ07102 United States Department of Computer Science Ying Wu College of Computing New Jersey Institute of Technology NewarkNJ07102 United States

Live time-lapse microscopy is essential for a wide range of biological applications. Software-based automation is the gold standard for the operation of hardware accessories necessary for image acquisition. Given that current software packages are neither affordable nor open to complex structured programming, we have developed a Matlab-based graphical user interface (GUI) that is fundamentally accessible while providing limitless avenues for further customization. The GUI simultaneously communicates with the open-source, cross-functional platform -ÝManager for controlling hardware for time-lapse image acquisition and with other software for image processing. The use of the GUI is demonstrated through an 18-hour cell migration experiment. The results suggest that the GUI can generate high-quality, high-throughput time-lapse images. The core code behind the GUI is open-source so that it can be modified and upgraded. Therefore, it benefits the researchers worldwide by providing them a fundamental yet functional template to add in advanced features specific to their needs, such as additional non-microscopy hardware parts and software packages supported by the Matlab software. Copyright © 2019, The Authors. All rights reserved.

关键词： MATLAB

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Broadband Scanning Microwave Microscopy of a Biological Cell with Unprecedented Image Quality and Signal-to-Noise Ratio

Broadband Scanning Microwave Microscopy of a Biological Cell...

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Microwave, MTT-S International Symposium

作者： Xin Jin Marco Farina Xiaopeng Wang Gianluca Fabi Xuanhong Cheng James C. M. Hwang Department of Electrical and Computer Engineering Lehigh University Bethlehem PA USA Dipartimento di Ingegneria dell’Informazione Università Politecnica delle Marche Ancona Italy Dept. of Materials Science and Engineering and Dept. of Bioengineering Lehigh University PA USA

A broadband scanning microwave microscope (SMM) was developed by modifying both the hardware and software of a narrowband commercial SMM. Using the broadband SMM, images of a Jurkat human lymphocyte cell were acquired over 128 × 128 pixels at 201 frequencies from 1 GHz to 9 GHz, all in 20 min. The acquired broadband signals allowed Fourier transformation for time-gated postprocessing of the SMM data with unprecedented image quality and signal-to-noise ratio. The broadband SMM can enable microwave spectroscopy and 3D tomography of intracellular structures in a live cell.

关键词： Broadband communication Signal to noise ratio Narrowband Probes Microwave imaging Microwave circuits

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First-principles studies of dopant and radiation defect effects on optical fiber sensors 11

First-principles studies of dopant and radiation defect effe...

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11th Nuclear Plant Instrumentation, Control, and Human-Machine Interface Technologies, NPIC and HMIT 2019

作者： Da Silver, Thiago H. Butler, Drew Biaggne, Austin Kandadai, Nirmala Subbaraman, Harish Daw, Joshua Li, Lan Micron School of Materials Science and Engineering Boise State University 1910 University Drive BoiseID83725 United States Department of Electrical and Computer Engineering Boise State University 1910 University Drive BoiseID83725 United States High Temperature Test Laboratory Idaho National Laboratory 2525 Fremont Avenue Idaho FallsID83415 United States Center for Advanced Energy Studies 995 University Blvd Idaho FallsID83401 United States

ISBN: (纸本)9780894487835

Density functional theory-based calculations and ab-initio molecular dynamics have been performed in order to study the effects of dopants and radiation defects on the structures and optical properties of amorphous silica in comparison to sapphire - another high-temperature and radiation-resistant material. Out studies focused on oxygen deficient centers ODCs (a typical point defect due to radiation damage) and fluorine F dopants. Optical properties depend on dielectric function, calculated from the charge density of the material. With real- and imaginary-part dielectric functions, all the other optical properties, such as refractive index, energy loss function, and absorption coefficient, could be derived. Optical properties of amorphous silica and sapphire become anisotropic with either ODC or F dopants. They contribute characteristic peaks to the optical spectra and induce minor peaks in the low photon energy ranges. Static optical coefficients significantly increase with F dopants, but they might remain or slightly increase with ODC. Our results suggest that adding dopants can improve the optical properties of the materials and potentially inhabit the formation of high-temperature and radiation defects, resulting in an enhancement of the light signal in their transmitted spectra. Controlling dopant concentration also plays a crucial role, because a high dopant concentration could cause a structural distortion and degrade the optical performance of the material. © 2018 Westinghouse Electric Company LLC All Rights Reserved

关键词： Sapphire

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Evaluation of the vortex core size in gate-tunable Josephson junctions in Corbino geometry

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Physical Review B 2020年第4期102卷 045301-045301页

作者： Sadashige Matsuo Mizuki Tateno Yosuke Sato Kento Ueda Yuusuke Takeshige Hiroshi Kamata Joon Sue Lee Borzoyeh Shojaei Christopher J. Palmstrøm Seigo Tarucha Department of Applied Physics The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan JST PRESTO 4-1-8 Honcho Kawaguchi Saitama 332-0012 Japan Center for Emergent Matter Science RIKEN 2-1 Hirosawa Wako-shi Saitama 351-0198 Japan California NanoSystems Institute University of California Santa Barbara California 93106 USA Materials Department University of California Santa Barbara California 93106 USA Electrical and Computer Engineering University of California Santa Barbara California 93106 USA

We report on electron transport in gate-tunable Corbino-geometry Josephson junctions (CJJs) fabricated from an epitaxially grown Aluminum (Al) superconductor on an InAs quantum well. We observed that a supercurrent can be tuned by the gate voltage and sweeping an out-of-plane magnetic field initiates a sudden rise in the electrical resistance. From the analysis using a theoretical model for flow resistance due to Josephson vortices in CJJs, we evaluate the vortex core size, which substantially depends on the carrier density and temperature. These results will be subsequently utilized for future operations of the Josephson vortices in CJJs.

关键词： Transport phenomena Vortices in superconductors Josephson junctions Quantum wells

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Resonant infrared matrix-assisted pulsed laser evaporation of hybrid perovskites

Resonant infrared matrix-assisted pulsed laser evaporation o...

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Novel Optical materials and Applications, NOMA 2018

作者： Stiff-Roberts, Adrienne D. Mitzi, David B. Barraza, E. Tomas Dunlap-Shohl, Wiley A. Department of Electrical and Computer Engineering Duke University DurhamNC27708 United States Department of Mechanical Engineering and Materials Science Duke University DurhamNC27708 United States Department of Chemistry Duke University DurhamNC27708 United States

Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) was used to deposit the metal-halide perovskite (MHP), CH3NH3PbI3, and solar cell performance was demonstrated, thereby establishing the potential... 详细信息

ISBN: (纸本)9781943580439

关键词： Metal halides

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Adsorption-Controlled growth of Ga2O3 by suboxide molecular-beam epitaxy

arXiv

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arXiv 2020年

作者： Vogt, Patrick Hensling, Felix V.E. Azizie, Kathy Chang, Celesta S. Turner, David Park, Jisung McCandless, Jonathan P. Paik, Hanjong Bocklund, Brandon J. Hoffman, Georg Bierwagen, Oliver Jena, Debdeep Xing, Huili G. Mou, Shin Muller, David A. Shang, Shun-Li Liu, Zi-Kui Schlom, Darrell G. Department of Materials Science and Engineering Cornell University IthacaNY14853 United States School of Applied and Engineering Physics Cornell University IthacaNY14853 United States Air Force Research Laboratory Materials and Manufacturing Directorate Wright Patterson AFB OH45433 United States Azimuth Corporation 2970 Presidential Drive Suite 200 FairbornOH45324 United States School of Electrical and Computer Engineering Cornell University IthacaNY14853 United States Cornell University IthacaNY14853 United States Department of Materials Science and Engineering Pennsylvania State University University ParkPA16802 United States Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5–7 Berlin10117 Germany Kavli Institute at Cornell for Nanoscale Science IthacaNY14853 United States Leibniz-Institut für Kristallsüchtung Max-Born-Str. 2 Berlin12489 Germany

This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 μm hr−1 with excellent crystallinity in an adsorption-controlled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 μm hr−1 for Ga2O3/Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 μm. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. Copyright © 2020, The Authors. All rights reserved.

关键词： Molecular beam epitaxy

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RETRACTED ARTICLE: Solar system treatment with incorporating nanomaterial within the absorber tube employing turbulator

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Applied Nanoscience 2022年第4期13卷 3107-3107页

作者： Ajour, Mohammed N. Rawa, Muhyaddin J. H. Milyani, Ahmad H. Li, Meicheng Selim, Mahmoud M. Center of Research Excellence in Renewable Energy and Power Systems King Abdulaziz University Jeddah Saudi Arabia Department of Electrical and Computer Engineering King Abdulaziz University Jeddah Saudi Arabia School of New Energy New Energy Materials and Devices Center North China Electric Power University Beijing China Department of Mathematics Al-Aflaj College of Science and Humanities Studies Prince Sattam Bin Abdulaziz University Al-Aflaj Saudi Arabia Department of Mathematics Suez Faculty of Science Suez University Suez Egypt

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Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

arXiv

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arXiv 2020年

作者： Chatterjee, Shouvik Khalid, Shoaib Inbar, Hadass S. Guo, Taozhi Chang, Yu-Hao Young, Elliot Fedorov, Alexei V. Read, Dan Janotti, Anderson Palmstrøm, Christopher J. Department of Electrical & Computer Engineering University of California Santa BarbaraCA93106 United States Department of Condensed Matter Physics and Materials Science Tata Institute of Fundamental Research Homi Bhabha Road Mumbai400005 India Department of Physics and Astronomy University of Delaware NewarkDE19716 United States Department of Materials Science and Engineering University of Delaware NewarkDE19716 United States Materials Department University of California Santa BarbaraCA93106 United States Department of Physics University of California Santa BarbaraCA93106 United States Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA94720 United States School of Physics and Astronomy Cardiff University CardiffCF24 3AA United Kingdom California NanoSystems Institute University of California Santa BarbaraCA93106 United States

Controlling electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a novel, two-dimensional, interfacial hole gas and is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultra-thin limit. Our work lays out a general strategy of utilizing confined thin film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously, provides insights into its origin. Copyright © 2020, The Authors. All rights reserved.

关键词： III-V semiconductors

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Limits to surface-enhanced Raman scattering near arbitrary-shape scatterers

arXiv

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arXiv 2019年

作者： Michon, Jérôme Benzaouia, Mohammed Yao, Wenjie Miller, Owen D. Johnson, Steven G. Department of Materials Science and Engineering Massachusetts Institute of Technology CambridgeMA United States Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA United States Department of Applied Physics Yale University New HavenCT United States Department of Mathematics Massachusetts Institute of Technology CambridgeMA United States

The low efficiency of Raman spectroscopy can be overcome by placing the active molecules in the vicinity of scatterers, typically rough surfaces or nanostructures with various shapes. This surface-enhanced Raman scattering (SERS) leads to substantial enhancement that depends on the scatterer that is used. In this work, we find fundamental upper bounds on the Raman enhancement for arbitrary-shaped scatterers, depending only on its material constants and the separation distance from the molecule. According to our metric, silver is optimal in visible wavelengths while aluminum is better in the near-UV region. Our general analytical bound scales as the volume of the scatterer and the inverse sixth power of the distance to the active molecule. Numerical computations show that simple geometries fall short of the bounds, suggesting further design opportunities for future improvement. For periodic scatterers, we use two formulations to discover different bounds, and the tighter of the two always must apply. Comparing these bounds suggests an optimal period depending on the volume of the scatterer. Copyright © 2019, The Authors. All rights reserved.

关键词： Molecules

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