Owing to the difficulty in detecting and manipulating the magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. By employing heavy-metal...
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Owing to the difficulty in detecting and manipulating the magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. By employing heavy-metal–rare-earth–transition-metal alloy bilayers, we experimentally study current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum at the angular momentum compensation point. With experiment and modeling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy-metal–ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.
Intracellular access with high spatiotemporal resolution can enhance our understanding of how neurons or cardiomyocytes regulate and orchestrate network activity, and how this activity can be affected with pharmacolog...
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We demonstrate a unidirectional motion of a quasiparticle without explicit symmetry breaking along the space-time coordinate of the particle motion. This counterintuitive behavior originates from a combined action of ...
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We demonstrate a unidirectional motion of a quasiparticle without explicit symmetry breaking along the space-time coordinate of the particle motion. This counterintuitive behavior originates from a combined action of two intrinsic asymmetries in the other two directions. We realize this idea with the magnon-driven motion of a magnetic domain wall in thin films with interfacial asymmetry. Contrary to previous studies, the domain wall moves along the same direction regardless of the magnon-flow direction. Our general symmetry analysis and numerical simulation reveal that the odd order contributions from the interfacial asymmetry is unidirectional, which is dominant over bidirectional contributions in the realistic regime. We develop a simple analytic theory on the unidirectional motion, which provides an insightful description of this counterintuitive phenomenon.
We report the synthesis, structure and nonlinear optical properties of cadmium sulphide (CdS) nanocrystallines (NCs) synthesized electrochemically both with and without detergent ATLAS G3300. Relevant structural and m...
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ISBN:
(数字)9781728155661
ISBN:
(纸本)9781728155678
We report the synthesis, structure and nonlinear optical properties of cadmium sulphide (CdS) nanocrystallines (NCs) synthesized electrochemically both with and without detergent ATLAS G3300. Relevant structural and morphological features are explored by X-ray diffraction and scanning electron microscopy (SEM) techniques. The efficiency of the second harmonic generation (SHG) appears to be strongly dependent on the energy density of the incident fundamental laser radiation and NC sizes.
A variable inductor concept based on a magnetic structure consisting of a composite of magnetic materials is introduced to meet designed inductance function of current. A design of the inductor, termed hetero-magnetic...
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In the fabrication of semiconductor devices, reactive plasmas are widely used in key processes such as microfabrication, surface modification and film deposition, and there are now demands for processing precision at ...
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ISBN:
(数字)9781728142326
ISBN:
(纸本)9781728142333
In the fabrication of semiconductor devices, reactive plasmas are widely used in key processes such as microfabrication, surface modification and film deposition, and there are now demands for processing precision at the atomic layer level, and for deposition accuracy that allows the control of structures at the molecular level. However, in ultra-miniature nanoscale devices that will become the mainstream in the future, the use of plasma processes can cause serious problems such as abnormal etching and breakdown of insulation films by the accumulation of ions or electrons emitted from the plasma as shown in Fig. 1, also the formation of surface defects (dangling bond) of over a few tens nm in depth by exposure to ultraviolet (UV) emissions from the plasma. [1] -[4] In particular, since nano-scale devices have a larger surface area compared with the bulk material, plasma processes can have a large influence on the electrical and optical properties of devices due to process-induced defects caused by ultraviolet exposure, which has not caused a problem in the presented devices of 32 nm. Furthermore, since future nanodevices will require size control of three-dimensional structures at the atomic layer level, it will be absolutely essential to control surface chemical reactions with high precision and selectivity at the atomic layer level. Neutral beam process technology has attracted attention as a way of solving these issues [5], [6], as shown in Fig. 2. The neutral beam suppresses the incidence of charged particles and UV photon radiation onto the substrate, and is able to expose the substrate only to energy controlled neutral beam (neutral beam motion energy can be precisely controlled by ion acceleration energy with the applied electric field before neutralization), resulting in ultra-precise nano-processing that can suppress the formation of defects at the atomic layer level and control surface chemical reactions with high precision.
Entanglement can offer substantial advantages in quantum information processing, but loss and noise hinder its applications in practical scenarios. Although it has been well known for decades that the classical commun...
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Laser wakefield acceleration (LWFA) may achieve TeV/m gradients using high-density solid-state plasmas as accelerating media. However, the application of bulk solid materials requires attosecond laser pulses, such as ...
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In article number 2008709, Zhigang Ji, Lain-Jong Li, Jr-Hau He, Xixiang Zhang, and co-workers use ferroelectric switching in the van der Waals ferroelectric α-In2Se3 to increase the on/off ratio of heterosynaptic dev...
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In article number 2008709, Zhigang Ji, Lain-Jong Li, Jr-Hau He, Xixiang Zhang, and co-workers use ferroelectric switching in the van der Waals ferroelectric α-In2Se3 to increase the on/off ratio of heterosynaptic devices to over 103. The state-of-the-art devices can fulfil in-memory computing with ultralow operation currents and also realize high accuracy of pattern recognition with both supervised and unsupervised learning in simulated neural networks.
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