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Stabilization of Undercooled Metals via Passivating Oxide Layers

Angewandte Chemie 2020年第11期133卷

作者： Andrew Martin Boyce S. Chang Alana M. Pauls Chuanshen Du Martin Thuo Department of Materials Science and Engineering Iowa State University Ames IA 50010 USA Department of Electrical and Computer Engineering Iowa State University Ames IA 50010 USA Micro-Electronics Research Centre Ames IA 50014 USA

Undercooling metals relies on frustration of liquid–solid transition mainly by an increase in activation energy. Passivating oxide layers are a way to isolate the core from heterogenous nucleants (physical barrier) while also raising the activation energy (thermodynamic/kinetic barrier) needed for solidification. The latter is due to composition gradients (speciation) that establishes a sharp chemical potential gradient across the thin (0.7–5 nm) oxide shell, slowing homogeneous nucleation. When this speciation is properly tuned, the oxide layer presents a previously unaccounted for interfacial tension in the overall energy landscape of the relaxing material. We demonstrate that 1) the integrity of the passivation oxide is critical in stabilizing undercooled particle, a key tenet in developing heat-free solders, 2) inductive effects play a critical role in undercooling, and 3) the magnitude of the influence of the passivating oxide can be larger than size effects in undercooling.

关键词： energy landscape inductive effect metastability phase transformation stable undercooling

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Exploring interfacial exchange coupling and sublattice effect in heavy metal/ferrimagnetic insulator heterostructures using Hall measurements, x-ray magnetic circular dichroism, and neutron reflectometry

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Physical Review B 2019年第10期99卷 104401-104401页

作者： Qiming Shao Alexander Grutter Yawen Liu Guoqiang Yu Chao-Yao Yang Dustin A. Gilbert Elke Arenholz Padraic Shafer Xiaoyu Che Chi Tang Mohammed Aldosary Aryan Navabi Qing Lin He Brian J. Kirby Jing Shi Kang L. Wang Department of Electrical and Computer Engineering University of California Los Angeles California 90095 USA NIST Center for Neutron Research National Institute of Standards and Technology Gaithersburg Maryland 20899-6102 USA Department of Physics and Astronomy University of California Riverside California 92521 USA Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China Department of Materials Science and Engineering University of Tennessee Knoxville Tennessee 37996 USA Advanced Light Source Lawrence Berkeley National Laboratory Berkeley California 94720 USA Department of Physics and Astronomy King Saud University Riyadh 11451 Saudi Arabia International Center for Quantum Materials School of Physics Peking University Beijing 100871 China Department of Physics and Astronomy Department of Materials Science and Engineering University of California Los Angeles California 90095 USA

We use temperature-dependent Hall measurements to identify contributions of spin Hall, magnetic proximity, and sublattice effects to the anomalous Hall signal in heavy metal/ferrimagnetic insulator heterostructures with perpendicular magnetic anisotropy. This approach enables detection of both the magnetic proximity effect onset temperature and the magnetization compensation temperature and provides essential information regarding the interfacial exchange coupling. Onset of a magnetic proximity effect yields a local extremum in the temperature-dependent anomalous Hall signal, which occurs at higher temperature as magnetic insulator thickness increases. This magnetic proximity effect onset occurs at much higher temperature in Pt than W. The magnetization compensation point is identified by a sharp anomalous Hall sign change and divergent coercive field. We directly probe the magnetic proximity effect using x-ray magnetic circular dichroism and polarized neutron reflectometry, which reveal an antiferromagnetic coupling between W and the magnetic insulator. Finally, we summarize the exchange-coupling configurations and the anomalous Hall-effect sign of the magnetized heavy metal in various heavy metal/magnetic insulator heterostructures.

关键词： Spintronics Magnetic insulators

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Frontispiz: Heat‐Free Biomimetic Metal Molding on Soft Substrates

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Angewandte Chemie 2020年第38期132卷

作者： Julia J. Chang Andrew Martin Chuanshen Du Alana M. Pauls Martin Thuo Iowa State University Department of Materials Science and Engineering Ames IA 50014 USA Micro-Electronics Research Centre Ames IA 50014 USA Iowa State University Department of Electrical and Computer Engineering Ames IA 50014 USA

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Artificial synapse with mnemonic functionality using gsst-based photonic integrated memory

arXiv

引用

arXiv 2019年

作者： Miscuglio, Mario Meng, Jiawei Yesiliurt, Omer Zhang, Yifei Prokopeva, Ludmila J. Mehrabian, Armin Hu, Juejun Kildishev, Alexander V. Sorger, Volker J. Department of Electrical and Computer Engineering George Washington University 800 22nd Street NW WashingtonDC20052 United States Birck Nanotechnology Center School of Ece Purdue University West LafayetteIN47907 United States Department of Materials Science and Engineering Massachusetts Institute of Technology CambridgeMA United States

Machine-learning tasks performed by neural networks demonstrated useful capabilities for producing reliable, and repeatable intelligent decisions. Integrated photonics, leveraging both component miniaturization and the wave-nature of the signals, can potentially outperform electronics architectures when performing inference tasks. However, the missing photon-photon force challenges non-volatile photonic device-functionality required for efficient neural networks. Here we present a novel concept and optimization of multi-level discrete-state non-volatile photonic memory based on an ultra-compact ( Copyright © 2019, The Authors. All rights reserved.

关键词： Phase change materials

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Author Correction: Charge disproportionate molecular redox for discrete memristive and memcapacitive switching

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Nature nanotechnology 2023年第9期18卷 1116页

作者： Sreetosh Goswami Santi P Rath Damien Thompson Svante Hedström Meenakshi Annamalai Rajib Pramanick B Robert Ilic Soumya Sarkar Sonu Hooda Christian A Nijhuis Jens Martin R Stanley Williams Sreebrata Goswami T Venkatesan NUSNNI-NanoCore National University of Singapore Singapore Singapore. sreetosh@u.nus.edu. NUS Graduate School for Integrative Science and Engineerinßg National University of Singapore Singapore Singapore. sreetosh@u.nus.edu. School of Chemical Sciences Indian Association for the Cultivation of Science (IACS) Kolkata India. Department of Physics Bernal Institute University of Limerick Limerick Ireland. damien.thompson@ul.ie. Fysikum Stockholm University Stockholm Sweden. Svensk Kärnbränslehantering Solna Sweden. NUSNNI-NanoCore National University of Singapore Singapore Singapore. Center for Nanoscale Science and Technology National Institute of Standards and Technology Gaithersburg MD USA. NUS Graduate School for Integrative Science and Engineerinßg National University of Singapore Singapore Singapore. Department of Chemistry National University of Singapore Singapore Singapore. Centre for Advanced 2D Materials National University of Singapore Singapore Singapore. NUSNNI-NanoCore National University of Singapore Singapore Singapore. jens.martin@ikz-berlin.de. Centre for Advanced 2D Materials National University of Singapore Singapore Singapore. jens.martin@ikz-berlin.de. Department of Physics National University of Singapore Singapore Singapore. jens.martin@ikz-berlin.de. Leibniz Institut für Kristallzüchtung Materials Science Department Berlin Germany. jens.martin@ikz-berlin.de. Department of Electrical and Computer Engineering Texas A&M University College Station TX USA. School of Chemical Sciences Indian Association for the Cultivation of Science (IACS) Kolkata India. icsg@iacs.res.in. NUSNNI-NanoCore National University of Singapore Singapore Singapore. Venky@nus.edu.sg. NUS Graduate School for Integrative Science and Engineerinßg National University of Singapore Singapore Singapore. Venky@nus.edu.sg. Department of Physics National University of Singapore Singapore Singapore. Venky@nus.edu.sg. Department of Electrical and Computer Engineering Nati

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Temperature-dependent thermal and thermoelectric properties of n-type and p-type Sc1−xMgxN

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Physical Review B 2018年第8期97卷 085301-085301页

作者： Bivas Saha Jaime Andres Perez-Taborda Je-Hyeong Bahk Yee Rui Koh Ali Shakouri Marisol Martin-Gonzalez Timothy D. Sands Department of Materials Science and Engineering University of California Berkeley California 94720 USA Instituto de Microelectrónica de Madrid CSIC C/ Isaac Newton 8 Tres Cantos 28760 Madrid Spain Department of Mechanical and Materials Engineering University of Cincinnati Cincinnati Ohio 45221 USA School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA Bradley Department of Electrical and Computer Engineering and Department of Materials Science and Engineering Virginia Tech Blacksburg Virginia 24061 USA

Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n-type semiconductors and exhibit a large thermoelectric power factor of ∼3.5×10−3W/m−K2 at 600–800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type Sc1−xMgxN thin film alloys with low MgxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type Sc1−xMgxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type Sc1−xMgxN thin film alloys exhibit a maximum thermoelectric power factor of ∼0.8×10−3W/m−K2 at 850 K. The thermoelectric properties are tunable by adjusting the MgxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n-type ScN to inside the valence band in highly hole-doped p-type Sc1−xMgxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of Sc1−xMgxN thin-film alloys, without affecting the power factor for improved

关键词： Semiconductors Thermal conductivity Alloys Thin films

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Atomically controlled tunable doping in high performance wse2 devices

arXiv

引用

arXiv 2019年

作者： Pang, C.-S. Hung, T.Y.T. Chen, Z.H. Khosravi, A. Addou, R. Wang, Q. Kim, M.J. Wallace, R.M. Addou, R. Birck Nanotechnology Center Department of Electrical and Computer Engineering Purdue University 1205 W State St West LafayetteIN47907 United States Department of Materials Science and Engineering University of Texas at Dallas 800 West Campbell Road RichardsonTX75080 United States School of Chemical Biological and Environmental Engineering Oregon State University CorvallisOR93771 United States

Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transport properties and potential for ultimate device scaling. However, it is widely acknowledged that substantial contact resistance associated with the contact-TMD interface has impeded device performance to a large extent. It has been discovered that O2 plasma treatment can convert WSe2 into WO3-x and substantially improve contact resistances of p-type WSe2 devices by strong doping induced thinner depletion width. In this paper, we carefully study the temperature dependence of this conversion, demonstrating an oxidation process with a precise monolayer control at room temperature and multilayer conversion at elevated temperatures. Furthermore, the lateral oxidation of WSe2 under the contact revealed by HR-STEM leads to potential unpinning of the metal Fermi level and Schottky barrier lowering, resulting in lower contact resistances. The p-doping effect is attributed to the high electron affinity of the formed WO3-x layer on top of the remaining WSe2 channel, and the doping level is found to be dependent on the WO3-x thickness that is controlled by the temperature. Comprehensive materials and electrical characterizations are presented, with a low contact resistance of ~528 Ω μm and record high on-state current of 320 μA/μm at -1V bias being reported. Copyright © 2019, The Authors. All rights reserved.

关键词： Tungsten compounds

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Design and fabrication of thin-film silicon-based selective solar absorbers

Design and fabrication of thin-film silicon-based selective ...

引用

Optics for Solar Energy, OSE 2018

作者： Zhou, Zhiguang Tian, Hao Guler, Urcan Shalaev, Vladimir Hymel, Thomas Cui, Yi Bermel, Peter School of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States Birck Nanotechnology Center Purdue University West LafayetteIN47907 United States Department of Materials Science and Engineering Stanford University Palo AltoCA94305 United States

The efficiency of solar absorbers at capturing heat can be improved dramatically using spectral selectivity. Applying this concept to thin-film silicon increases thermal transfer efficiencies over 60% at 595°C un... 详细信息

ISBN: (纸本)9781943580477

关键词： Thin films

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The application of an extracellular vesicle-based biosensor in early diagnosis and prediction of chemoresponsiveness in ovarian cancer

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Cancer Letters 2024年 581卷 216533-216533页

作者： Tsang, Benjamin K. Asare-Werehene, Meshach Hunter, Rob Gerber, Emma Reunov, Arkadiy Brine, Isaiah Chang, Chia-Yu Chang, Chia-Ching Shieh, Dar-Bin Burger, Dylan Anis, Hanan Departments of Obstetrics & Gynecology and Cellular & Molecular Medicine Centre for Infection Immunity and Inflammation Interdisciplinary School of Health Sciences University of Ottawa Ottawa ON K1N 6N5 Canada Chronic Disease Program Ottawa Hospital Research Institute The Ottawa Hospital Ottawa ON K1Y 4E9 Canada Department of Biology St. Francis Xavier University 2320 Notre Dame Avenue Antigonish NS B2G 2W5 Canada School of Electrical Engineering and Computer Science Ottawa-Carleton Institute for Biomedical Engineering University of Ottawa Ottawa ON K1N 6N5 Canada Department of Biological Science and Department of Electrophysics Technology Center for Intelligent Drug Systems and Smart Bio-devices (IDS2B) National Yang Ming Chiao Tung University Hsinchu 30068 Taiwan Institute of Basic Medical Science Institute of Oral Medicine and Department of Stomatology Advanced Optoelectronic Technology Center and Center for Micro/Nano Science and Technology National Cheng Kung University Hospital National Cheng Kung University Tainan 704 Taiwan Institute of Physics Academia Sinica Taipei 10529 Taiwan

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Author Correction: Filling the gap between topological insulator nanomaterials and triboelectric nanogenerators

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Nature communications 2022年第1期13卷 1570页

作者： Mengjiao Li Hong-Wei Lu Shu-Wei Wang Rei-Ping Li Jiann-Yeu Chen Wen-Shuo Chuang Feng-Shou Yang Yen-Fu Lin Chih-Yen Chen Ying-Chih Lai Department of Materials Science and Engineering National Chung Hsing University Taichung 40227 Taiwan. Department of Physics National Chung Hsing University Taichung 40227 Taiwan. Ming Hsieh Department of Electrical and Computer Engineering University of Southern California Los Angeles CA 90089 USA. Francis Bitter Magnet Lab Massachusetts Institute of Technology Cambridge MA 02139 USA. Department of Materials and Optoelectronic Science National Sun Yat-Sen University Kaohsiung 80424 Taiwan. i-Center for Advanced Science and Technology National Chung Hsing University Taichung 40227 Taiwan. Innovation and Development Center of Sustainable Agriculture National Chung Hsing University Taichung 40227 Taiwan. Department of Physics National Chung Hsing University Taichung 40227 Taiwan. yenfulin@nchu.edu.tw. i-Center for Advanced Science and Technology National Chung Hsing University Taichung 40227 Taiwan. yenfulin@nchu.edu.tw. Department of Materials and Optoelectronic Science National Sun Yat-Sen University Kaohsiung 80424 Taiwan. cychen@mail.nsysu.edu.tw. Department of Materials Science and Engineering National Chung Hsing University Taichung 40227 Taiwan. yclai@nchu.edu.tw. i-Center for Advanced Science and Technology National Chung Hsing University Taichung 40227 Taiwan. yclai@nchu.edu.tw. Innovation and Development Center of Sustainable Agriculture National Chung Hsing University Taichung 40227 Taiwan. yclai@nchu.edu.tw.

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