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Correction to: Double Vision Model Using Space-Time Function Control within Silicon Microring System

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Silicon 2020年第12期12卷 3057-3057页

作者： Bunruangses, M. Youplao, P. Amiri, I. S. Pornsuwancharoen, N. Yupapin, P. Department of Computer Engineering Faculty of Industrial Education Rajamangala University of Technology Phra Nakhon Bangkok Thailand Department of Electrical Engineering Faculty of Industry and Technology Rajamangala University of Technology Isan Sakon Nakhon Thailand Division of Materials Science and Engineering Boston University Boston USA Computational Optics Research Group Advanced Institute of Materials Science Ton Duc Thang University Ho Chi Minh City Vietnam Faculty of Applied Sciences Ton Duc Thang University Ho Chi Minh City Vietnam

The original version of this article unfortunately contained a mistake in the “Acknowledgments” section.

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Ultrahigh-pressure form of SiO2 glass with dense pyrite-type crystalline homology

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Physical Review B 2019年第4期99卷 045153-045153页

作者： M. Murakami S. Kohara N. Kitamura J. Akola H. Inoue A. Hirata Y. Hiraoka Y. Onodera I. Obayashi J. Kalikka N. Hirao T. Musso A. S. Foster Y. Idemoto O. Sakata Y. Ohishi Department of Earth Sciences ETH Zürich Zürich 8092 Switzerland Department of Earth and Planetary Materials Science Tohoku University Sendai 980-8578 Japan Research Center for Advanced Measurement and Characterization National Institute for Materials Science (NIMS) Hyogo 679-5148 Japan Center for Materials research by Information Integration (CMI2) Research and Services Division of Materials Data and Integrated System (MaDIS) NIMS Ibaraki 305-0047 Japan Research and Utilization Division Japan Synchrotron Radiation Research Institute Hyogo 679-5198 Japan School of Materials Science Japan Advanced Institute of Science and Technology Ishikawa 923-1211 Japan PRESTO Japan Science and Technology Agency Tokyo 102-0076 Japan Department of Pure and Applied Chemistry Faculty of Science and Technology Tokyo University of Science Chiba 278-8510 Japan Department of Physics Tampere University of Technology FI-33101 Tampere Finland Department of Physics Norwegian University of Science and Technology NO-7481 Trondheim Norway Institute of Industrial Science The University of Tokyo Tokyo 153-8505 Japan Graduate School of Fundamental Science and Engineering Waseda University Tokyo 169-8555 Japan Kagami Memorial Research Institute for Materials Science and Technology Waseda University Tokyo 169-0051 Japan Mathematics for Advanced Materials-OIL AIST Sendai 980-8577 Japan WPI Advanced Institute for Materials Research Tohoku University Sendai 980-8577 Japan Kyoto University Institute for Advanced Study Kyoto University Kyoto 606-8501 Japan Center for Advanced Intelligence Project RIKEN Tokyo 103-0027 Japan Institute for Integrated Radiation and Nuclear Science Kyoto University Osaka 590-0494 Japan Department of Applied Physics Aalto University FI-00076 Aalto Finland Division of Electrical Engineering and Computer Science Graduate School of Natural Science and Technology Kanazawa University Kanazawa 920-1192 Japan

High-pressure synthesis of denser glass has been a longstanding interest in condensed-matter physics and materials science because of its potentially broad industrial application. Nevertheless, understanding its nature under extreme pressures has yet to be clarified due to experimental and theoretical challenges. Here we reveal the formation of OSi4 tetraclusters associated with that of SiO7 polyhedra in SiO2 glass under ultrahigh pressures to 200 gigapascal confirmed both experimentally and theoretically. Persistent homology analyses with molecular dynamics simulations found increased packing fraction of atoms whose topological diagram at ultrahigh pressures is similar to a pyrite-type crystalline phase, although the formation of tetraclusters is prohibited in the crystalline phase. This critical difference would be caused by the potential structural tolerance in the glass for distortion of oxygen clusters. Furthermore, an expanded electronic band gap demonstrates that chemical bonds survive at ultrahigh pressure. This opens up the synthesis of topologically disordered dense oxide glasses.

关键词： Chemical bonding Density of states Electronic structure Phase transitions Pressure effects Specific phase transitions Structural properties Topological phase transition Topological phases of matter Density functional theory Molecular dynamics Wannier function methods X-ray diffraction X-ray powder diffraction

Beryllium polyhydride be4h8(h2)2 synthesized at hp/ht

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arXiv 2019年

作者： Matsuoka, Takahiro Fujihisa, Hiroshi Ishikawa, Y Takahiro Nakagawa, Takaya Kuno, Keiji Hirao, Naohisa Ohishi, Yasuo Shimizu, Katsuya Sasaki, Shigeo Department of Electrical Faculty of Engineering Gifu University Electronic and Computer Engineering Gifu501-1193 Japan University of Tennessee KnoxvilleTN37996 United States Ibaraki305-8565 Japan Elements Strategy Initiative Center for Magnetic Materials National Institute for Material Science Ibaraki305-0047 Japan Graduate School of Engineering Gifu University Gifu501-1193 Japan Environmental and Renewable Energy Systems Division Gifu University Gifu501-1193 Japan Hyogo679-5198 Japan Center for Science and Technology under Extreme Conditions Graduate School of Engineering Science Osaka University Osaka560-8531 Japan

We report the XRD and Raman scattering measurements in combination with DFT calculations that reveal the formation of beryllium polyhydride Be4H8(H2)2 by laser heating Be/H2 mixture to above 1700 K at pressures between 5 GPa and 8 GPa. The Be4H8(H2)2 crystallizes in a P63/mmc structure and consists of corner-sharing BeH4 tetrahedrons and H2 molecules that are in an interstitial site. The Be4H8(H2)2 is stable at least to 14 GPa on compression and stable down to 4 GPa at room temperature. Our ab-initio calculations suggest that the Be4H8(H2)2 is a meta-stable phase of Be-H system. Copyright © 2019, The Authors. All rights reserved.

关键词： Calculations

A Study of Diffusion in Lithium-ion Electrodes under Fast Charging Using Electrochemical Impedance Spectroscopy

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A Study of Diffusion in Lithium-ion Electrodes under Fast Ch...

MRS Advances

作者： Ahmed, Kazi Bell, Jeffrey Ye, Rachel Dong, Bo Li, Yige Ozkan, Cengiz S. Ozkan, Mihrimah Department of Electrical and Computer Engineering University of California Riverside United States Materials Science and Engineering Program University of California Riverside United States Department of Mechanical Engineering University of California Riverside United States

An in-depth look at diffusion mechanics within lithium-ion electrodes under fast charging conditions is presented. Electrochemical impedance spectroscopy is used as the primary technique to investigate lithium diffusion within electrode material and in electrolyte near the electrode-electrolyte interface. Half-cells of silicon are charged under varying galvanostatic rates while obtaining impedance data. Collected data is analyzed with the help of an electrical equivalent circuit model that provides mechanical and electrochemical parameters for each instance. The novelty of this equivalent circuit partly lies in its ability to resolve between solid-phase diffusion and liquid-phase diffusion, both of which occur during cycling of a lithium-ion electrode. Observed patterns in the parameters of this circuit provide insight into impact of fast charging on mechanics of lithium diffusion, both inside the electrode matrix and within electrolyte. Copyright © materials Research Society 2017.

关键词： Equivalent circuits

A chirality-based quantum leap

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arXiv 2020年

作者： Aiello, Clarice D. Abbas, Muneer Abendroth, John M. Afanasev, Andrei Agarwal, Shivang Banerjee, Amartya S. Beratan, David N. Belling, Jason N. Berche, Bertrand Botana, Antia Caram, Justin R. Celardo, Giuseppe Luca Cuniberti, Gianaurelio Garcia-Etxarri, Aitzol Dianat, Arezoo Diez-Perez, Ismael Guo, Yuqi Gutierrez, Rafael Herrmann, Carmen Hihath, Joshua Kale, Suneet Kurian, Philip Lai, Ying-Cheng Lopez, Alexander Medina, Ernesto Mujica, Vladimiro Naaman, Ron Noormandipour, Mohammadreza Palma, Julio L. Paltiel, Yossi Petuskey, William T. Ribeiro-Silva, João Carlos Saenz, Juan José Santos, Elton J.G. Solyanik, Maria Sorger, Volker J. Stemer, Dominik M. Ugalde, Jesus M. Valdes-Curiel, Ana Varela, Solmar Waldeck, David H. Weiss, Paul S. Zacharias, Helmut Wang, Qing Hua California NanoSystems Institute University of California Los Angeles Los AngelesCA90095 United States Department of Electrical and Computer Engineering University of California Los Angeles Los AngelesCA90095 United States Department of Microbiology Howard University WashingtonDC20059 United States Laboratory for Solid State Physics ETH Zürich Zürich8093 Switzerland George Washington University WashingtonDC20052 United States Department of Materials Science and Engineering University of California Los Angeles Los AngelesCA90095 United States Department of Chemistry Duke University DurhamNC27708 United States Department of Chemistry & Biochemistry University of California Los Angeles Los AngelesCA90095 United States Laboratoire de Physique et Chimie Théoriques UMR Université de Lorraine-CNRS Vandœuvre les Nancy 7019 54506 France Department of Physics Arizona State University TempeAZ85287 United States Institute of Physics IFUAP-BUAP Puebla72000 Mexico Institute for Materials Science Max Bergmann Center of Biomaterials Dresden University of Technology Dresden01062 Germany Donostia International Physics Center Euskal Herriko Unibertsitatea Euskadi Donostia20018 Spain Department of Chemistry Faculty of Natural and Mathematical Sciences King's College London 7 Trinity Street LondonSE1 1DB United Kingdom School for Engineering of Matter Transport and Energy Arizona State University TempeAZ85287 United States Department of Chemistry University of Hamburg Hamburg20146 Germany Department of Electrical and Computer Engineering University of California Davis DavisCA95616 United States School of Molecular Sciences Arizona State University TempeAZ85287 United States Quantum Biology Laboratory Graduate School Howard University WashingtonDC20059 United States School of Electrical Computer and Energy Engineering Arizona State University TempeAZ85287 United States Department of Chemical and Biological Physics Weizmann Institut

Chiral degrees of freedom occur in matter and in electromagnetic fields and constitute an area of research that is experiencing renewed interest driven by recent observations of the chiral-induced spin selectivity (CISS) effect in chiral molecules and engineered nanomaterials. The CISS effect underpins the fact that charge transport through nanoscopic chiral structures favors a particular electronic spin orientation, resulting in large room-temperature spin polarizations. Observations of the CISS effect suggest opportunities for spin control and for the design and fabrication of room-temperature quantum devices from the bottom up, with atomic-scale precision. Any technology that relies on optimal charge transport, including quantum devices for logic, sensing, and storage, may benefit from chiral quantum properties. These properties can be theoretically and experimentally investigated from a quantum information perspective, which is presently lacking. There are uncharted implications for the quantum sciences once chiral couplings can be engineered to control the storage, transduction, and manipulation of quantum information. This forward-looking perspective provides a survey of the experimental and theoretical fundamentals of chiral-influenced quantum effects, and presents a vision for their future roles in enabling room-temperature quantum technologies. Copyright © 2020, The Authors. All rights reserved.

关键词： Quantum optics

Multimodal laser micromachined shadow masks for rapid patterning of sub-5 μm organic and inorganic layers for lab-on-a-chip applications 22

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Multimodal laser micromachined shadow masks for rapid patter...

22nd International Conference on Miniaturized Systems for Chemistry and Life sciences, MicroTAS 2018

作者： Hart, Cacie Rajaraman, Swaminathan NanoScience Technology Center University of Central Florida OrlandoFL32816 United States Department of Materials Science and Engineering University of Central Florida OrlandoFL32816 United States Department of Electrical and Computer Engineering University of Central Florida OrlandoFL32816 United States BRIDG - Bridging the Innovation and Development Gap University of Central Florida OrlandoFL32816 United States

ISBN: (纸本)9781510897571

We present a makerspace microfabrication-enabled shadow mask technology utilizing a multimodal Nd:YAG laser with the capability to switch between 1064 nm, 532 nm, and 355 nm wavelengths. This laser allows for the micromachining of a variety of materials from silicon to glass to polymers to metals to biomaterials. With such a laser, we report for the first time to our knowledge, metal and polymer shadow masks for rapid prototyping and robust design to device translation for feature sizes in the sub-5 μm range. In fact, our recent results demonstrate repeatable shadow mask features down to approximately 1.5 μm on Kapton® substrates. Additionally, the demonstration of robust and repeatable patterning of organic and inorganic layers is performed with these masks. We anticipate such a technology will be vital for Lab-on-a-Chip, biosensor, environmental microsensors, and other microfluidic applications. Copyright© (2018) by Chemical and Biological Microsystems *** rights reserved.

关键词： Yttrium aluminum garnet

Search for W′ bosons decaying to a top and a bottom quark in leptonic final states in proton-proton collisions at s = 13 TeV

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Journal of High Energy Physics 2024年第5期2024卷 46页

作者： Hayrapetyan, A. Tumasyan, A. Adam, W. Andrejkovic, J.W. Bergauer, T. Chatterjee, S. Damanakis, K. Dragicevic, M. Escalante Del Valle, A. Hussain, P.S. Jeitler, M. Krammer, N. Liko, D. Mikulec, I. Schieck, J. Schöfbeck, R. Schwarz, D. Sonawane, M. Templ, S. Waltenberger, W. Wulz, C.-E. Darwish, M.R. Janssen, T. Van Mechelen, P. Bols, E.S. D’Hondt, J. Dansana, S. De Moor, A. Delcourt, M. El Faham, H. Lowette, S. Makarenko, I. Müller, D. Sahasransu, A.R. Tavernier, S. Tytgat, M. Van Putte, S. Vannerom, D. Clerbaux, B. De Lentdecker, G. Favart, L. Hohov, D. Jaramillo, J. Khalilzadeh, A. Lee, K. Mahdavikhorrami, M. Malara, A. Paredes, S. Pétré, L. Postiau, N. Thomas, L. Vanden Bemden, M. Vander Velde, C. Vanlaer, P. De Coen, M. Dobur, D. Hong, Y. Knolle, J. Lambrecht, L. Mestdach, G. Rendón, C. Samalan, A. Skovpen, K. Van Den Bossche, N. Wezenbeek, L. Benecke, A. Bruno, G. Caputo, C. Delaere, C. Donertas, I.S. Giammanco, A. Jaffel, K. Jain, Sa. Lemaitre, V. Lidrych, J. Mastrapasqua, P. Mondal, K. Tran, T.T. Wertz, S. Alves, G.A. Coelho, E. Hensel, C. Menezes De Oliveira, T. Moraes, A. Rebello Teles, P. Soeiro, M. Aldá Júnior, W.L. Alves Gallo Pereira, M. Barroso Ferreira Filho, M. Brandao Malbouisson, H. Carvalho, W. Chinellato, J. Da Costa, E.M. Da Silveira, G.G. De Jesus Damiao, D. Fonseca De Souza, S. Martins, J. Mora Herrera, C. Mota Amarilo, K. Mundim, L. Nogima, H. Santoro, A. Silva Do Amaral, S.M. Sznajder, A. Thiel, M. Vilela Pereira, A. Bernardes, C.A. Calligaris, L. Fernandez Perez Tomei, T.R. Gregores, E.M. Mercadante, P.G. Novaes, S.F. Orzari, B. Padula, Sandra S. Aleksandrov, A. Antchev, G. Hadjiiska, R. Iaydjiev, P. Misheva, M. Shopova, M. Sultanov, G. Dimitrov, A. Ivanov, T. Litov, L. Pavlov, B. Petkov, P. Petrov, A. Shumka, E. Keshri, S. Thakur, S. Cheng, T. Guo, Q. Javaid, T. Mittal, M. Yuan, L. Bauer, G. Hu, Z. Yi, K. Chen, G.M. Chen, H.S. Chen, M. Iemmi, F. Jiang, C.H. Kapoor, A. Liao, H. Liu, Z.-A. Monti, F. Sharma, R. Song, J.N. Tao, J. Wang, C. Wang, J. Wang, Z. Zhang, H. Agapitos, A. Ban, Y. Lev Yerevan Physics Institute Yerevan Armenia Institut für Hochenergiephysik Vienna Austria Universiteit Antwerpen Antwerpen Belgium Vrije Universiteit Brussel Brussel Belgium Université Libre de Bruxelles Bruxelles Belgium Ghent University Ghent Belgium Université Catholique de Louvain Louvain-la-Neuve Belgium Centro Brasileiro de Pesquisas Fisicas Rio de Janeiro Brazil Universidade do Estado do Rio de Janeiro Rio de Janeiro Brazil Universidade Estadual Paulista Universidade Federal do ABC São Paulo Brazil Institute for Nuclear Research and Nuclear Energy Bulgarian Academy of Sciences Sofia Bulgaria University of Sofia Sofia Bulgaria Instituto De Alta Investigación Universidad de Tarapacá Casilla 7 D Arica Chile Beihang University Beijing China Department of Physics Tsinghua University Beijing China Institute of High Energy Physics Beijing China State Key Laboratory of Nuclear Physics and Technology Peking University Beijing China Sun Yat-Sen University Guangzhou China University of Science and Technology of China Hefei China Institute of Modern Physics and Key Laboratory of Nuclear Physics and Ion-beam Application (MOE) — Fudan University Shanghai China Zhejiang University Zhejiang Hangzhou China Universidad de Los Andes Bogota Colombia Universidad de Antioquia Medellin Colombia University of Split Faculty of Electrical Engineering Mechanical Engineering and Naval Architecture Split Croatia University of Split Faculty of Science Split Croatia Institute Rudjer Boskovic Zagreb Croatia University of Cyprus Nicosia Cyprus Charles University Prague Czech Republic Escuela Politecnica Nacional Quito Ecuador Universidad San Francisco de Quito Quito Ecuador Academy of Scientific Research and Technology of the Arab Republic of Egypt Egyptian Network of High Energy Physics Cairo Egypt Center for High Energy Physics (CHEP-FU) Fayoum University El-Fayoum Egypt National Institute of Chemical Physics and Biophysics Tallinn Estonia Department of Physics

A search for W′ bosons decaying to a top and a bottom quark in final states including an electron or a muon is performed with the CMS detector at the LHC. The analyzed data correspond to an integrated luminosity of 138 fb⁻¹ of proton-proton collisions at a center-of-mass energy of 13 TeV. Good agreement with the standard model expectation is observed and no evidence for the existence of the W′ boson is found over the mass range examined. The largest observed deviation from the standard model expectation is found for a W′ boson mass (mW_′) hypothesis of 3.8 TeV with a relative decay width of 1%, with a local (global) significance of 2.6 (2.0) standard deviations. Upper limits on the production cross sections of W′ bosons decaying to a top and a bottom quark are set. Left- and right-handed W′ bosons with mW_′ below 3.9 and 4.3 TeV, respectively, are excluded at the 95% confidence level, under the assumption that the new particle has a narrow decay width. Limits are also set for relative decay widths up to 30%. © The Author(s) 2024.

关键词： Beyond Standard Model Hadron-Hadron Scattering Vector Boson Production

Vibrational fingerprintings for chemical recognition of biominerals

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arXiv 2019年

作者： Calzolari, Arrigo Pavan, Barbara Curtarolo, Stefano Nardelli, Marco Buongiorno Fornari, Marco CNR-NANO Istituto Nanoscienze Centro S3 via Campi 213A Modena ITI-41125 Italy Department of Physics University of North Texas DentonTX76203 United States Department of Chemistry and Science Advanced Materials Program Central Michigan University Mt. PleasantMI48859 United States Materials Science Electrical Engineering Physics and Chemistry Duke University DurhamNC27708 United States Center for Materials Genomics Duke University DurhamNC27708 United States

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Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films

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arXiv 2019年

作者： Chatterjee, Shouvik Khalid, Shoaib Inbar, Hadass S. Goswami, Aranya De Lima, Felipe Crasto Sharan, Abhishek Sabino, Fernando P. Brown-Heft, Tobias L. Chang, Yu-Hao Fedorov, Alexei V. Read, Dan Janotti, Anderson Palmstrøm, Christopher J. Department of Electrical & Computer Engineering University of California Santa BarbaraCA93106 United States Department of Physics and Astronomy University of Delaware NewarkDE19716 United States Department of Materials Science and Engineering University of Delaware NewarkDE19716 United States Materials Department University of California Santa BarbaraCA93106 United States Advanced Light Source Lawrence Berkeley National Laboratory BerkeleyCA94720 United States School of Physics and Astronomy Cardiff University CardiffCF24 3AA United Kingdom

Observation of large nonsaturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a combination of molecular-beam epitaxy, low-temperature transport, angle-resolved photoemission spectroscopy, and hybrid density functional theory we have unveiled the band structure of LuSb, where electron-hole compensation is identified as a mechanism responsible for large magnetoresistance in this topologically trivial compound. In contrast to bulk single crystal analogues, quasi-two-dimensional behavior is observed in our thin films for both electron and holelike carriers, indicative of dimensional confinement of the electronic states. Introduction of defects through growth parameter tuning results in the appearance of quantum interference effects at low temperatures, which has allowed us to identify the dominant inelastic scattering processes and elucidate the role of spin-orbit coupling. Our findings open up possibilities of band structure engineering and control of transport properties in rare-earth monopnictides via epitaxial synthesis. Copyright © 2019, The Authors. All rights reserved.

关键词： Electronic structure