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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Lian, Chuanyu Sun, Hongyi Huang, Yi-Siou Vitale, Steven A. Hu, Juejun Takeuchi, Ichiro Youngblood, Nathan Vagionas, Christos Ríos Ocampo, Carlos A. Department of Materials Science & Engineering University of Maryland College ParkMD20742 United States Institute for Research in Electronics and Applied Physics University of Maryland College ParkMD20742 United States Advanced Materials and Microsystems Group MIT Lincoln Laboratory LexingtonMA02139 United States Department of Materials Science & Engineering MIT CambridgeMA02139 United States Quantum Materials Center Department of Physics University of Maryland College ParkMD20742 United States Electrical & Computer Engineering Department The University of Pittsburgh PittsburghPA15213 United States Department of Informatics Center for Interdisciplinary Research and Innovation Aristotle University of Thessaloniki Thessaloniki Greece

ISBN: (纸本)9781957171395

We experimentally demonstrate the first electrically programmable, non-volatile silicon photonic content addressable memory cell using Sb2Se3 phase change material on microring resonators, opening the path for light-based search operations in zero-power look-up tables. CLEO 2024 © Optica Publishing Group 2024 © 2024 The Author(s)

关键词： Silicon photonics

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Selective Area Growth of Ga-and N-Polar InGaN/GaN Nanowires - A Comparative Study

Selective Area Growth of Ga-and N-Polar InGaN/GaN Nanowires ...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Arnob Ghosh Kamruzzaman Khan Shrivatch Sankar Elaheh Ahmadi Shamsul Arafin Department of Electrical and Computer Engineering The Ohio State University Columbus OH USA Department of Materials Science and Engineering University of Michigan Ann Arbor MI USA

InGaN quantum disks in GaN nanowires are grown on both Ga-and N-polar GaN templates. Comparative analysis indicates superior geometric control in N-polar GaN with higher vertical, reduced lateral growth rates, flat to... 详细信息

ISBN: (纸本)9798350369311

关键词： Lasers and electrooptics Nanowires Electro-optical waveguides

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Effect of Parasitic Leakage Currents Associated with the Regrown Aperture of AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs)

Effect of Parasitic Leakage Currents Associated with the Reg...

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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)

作者： Sara Pouladi Jae Hyun Ryou Department of Mechanical Engineering Texas Center for Superconductivity at UH Advanced Manufacturing Institute University of Houston USA Department of Electrical and Computer Engineering Materials Science and Engineering Program University of Houston USA

We present a numerical simulation on the effect of leakage paths in the regrown GaN layer in the aperture and above the current blocking layer (CBL) of current aperture vertical electron transistor (CAVET) devices. Here, a 2D TCAD modeling is employed to simulate a CAVET device structure considering two main origins of parasitic leakage current from CBL/regrown-GaN interface and gate/regrown-GaN bulk and their degree of detrimental effect on the characteristics of AlGaN/GaN CAVETs.

关键词： Performance evaluation Apertures Logic gates Numerical simulation Wide band gap semiconductors Numerical models Leakage currents

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High-throughput study of the anomalous Hall effect

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npj Computational materials 2023年第1期9卷 767-774页

作者： JakubŽelezný Yuta Yahagi Carles Gomez-Olivella Yang Zhang Yan Sun Institute of Physics Czech Academy of SciencesCukrovarnická1016200 Praha 6Czech Republic Department of Applied Physics Tohoku UniversitySendaiMiyagiJapan Department of Physics and Astronomy University of Tennessee KnoxvilleKnoxvilleTN 37996USA Min H.Kao Department of Electrical Engineering and Computer Science University of TennesseeKnoxvilleTN 37996USA Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China

Despite its long history,the anomalous Hall continues to attract attention due to its complex origins,its connection to topology,and its use as a probe of magnetic *** this work we investigate the anomalous Hall effect in 2871 ferromagnetic materials using an automatic high-throughput calculation *** analyze general properties of the effect,such as its reliance on spin-orbit coupling strength and *** materials with the largest anomalous Hall effect,we find that symmetry-protected band degeneracies in the non-relativistic electronic structure,such as mirror symmetry-protected nodal lines,are typically responsible for the large ***,we examine the dependence of the anomalous Hall effect on magnetization direction and demonstrate deviations from the commonly assumed expression j^(AHE)~M×E.

关键词： effect symmetry protected

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Terahertz Time-Domain Imaging for Radiotherapy Treatment Monitoring in Pancreatic Ductal Adenocarcinoma

Terahertz Time-Domain Imaging for Radiotherapy Treatment Mon...

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CLEO: Applications and Technology in CLEO 2024, CLEO: A and T 2024 - Part of Conference on Lasers and Electro-Optics

作者： Chakraborty, Debamitra Mills, Bradley N. Cheng, Jing Komissarov, Ivan Gerber, Scott Sobolewski, Roman Materials Science Graduate Program University of Rochester RochesterNY14627 United States Laboratory for Laser Energetics University of Rochester RochesterNY14623-1299 United States Department of Surgery University of Rochester Medical Center RochesterNY14642 United States Department of Electrical and Computer Engineering University of Rochester RochesterNY14627-0231 United States

ISBN: (纸本)9781957171395

Terahertz time-domain imaging was performed of stereotactic body radiotherapy-treated murine pancreatic ductal adenocarcinoma (PDAC) with a high spatial resolution. To generate 2D maps of the tissue samples, the refractive index and absorption coefficient were used as imaging markers extracted with the maximum a-posteriori probability (MAP) estimation algorithm. The results were then compared with the terahertz maps of untreated murine PDAC tissue samples and demonstrated that terahertz imaging can probe physical changes with high sensitivity in the tissue post treatment. © Optica Publishing Group 2024, © 2024 The Author(s)

关键词： Tissue

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Development of Support Vector Machine Method to Forecast Dengue-Endemic Areas

Development of Support Vector Machine Method to Forecast Den...

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2023 International Conference on Informatics, Multimedia, Cyber and Information Systems, ICIMCIS 2023

作者： Meileni, Hetty Ermatita Abdiansah Husni, Nyayu Latifah Desmawati Doctoral Program in Engineering Science Palembang30139 Indonesia Universitas Sriwijaya Faculty of Computer Science Palembang30139 Indonesia Palembang30139 Indonesia Politeknik Negeri Sriwijaya Palembang Department of Electrical Engineering Palembang30139 Indonesia Universitas Pembangunan Nasional Veteran Jakarta Faculty of Health Science Jakarta12450 Indonesia

ISBN: (纸本)9798350307306

The cases of dengue hemorrhagic fever (DHF) in Indonesia have increased significantly since 2020. Data shown by the Central Statistics Agency, for example, in South Sumatra Province, there were 6,348 cases of DHF during that period. To suppress the case number of DHF, forecasting areas that are susceptible to this disease is urgently needed. This research aims to develop a machine learning method Support Vector Machine (SVM). The data used include area data, population density data, weather data, and dengue fever case data. The development of the SVM model is carried out using a machine learning method that combines regional data, population density data, weather data, and dengue case data. In the end, using the SVM method can be used to forecast dengue-endemic areas, so that the government and society can take further action to reduce the negative impact of DHF. © 2023 IEEE.

关键词： Forecasting

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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Quantum-secured covert sensing for the Doppler effect

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Physical Review Research 2023年第4期5卷 043206-043206页

作者： Shuhong Hao Zheshen Zhang Department of Materials Science and Engineering University of Arizona Tucson Arizona 85721 USA Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor Michigan 48109 USA

Quantum mechanics has paved the way for establishing shared privacy among communicating parties through a secure regime known as quantum-secured communication. Recent advancements in both theory and experimentation have unveiled the potential of quantum resources in enhancing the performance and security of estimating unknown parameters. This has led to the emergence of a novel paradigm known as quantum-secured covert sensing, wherein the sensing operation is concealed from an adversary monitoring the environment by embedding the probe signal in a bright noise background. The performance and security of such protocols are quantified using quantum measurement theory. While previous investigations into quantum-secured covert sensing primarily focused on proof-of-concept phase estimation problems, this paper presents a pioneering quantum-secured covert sensing system designed for the Doppler effect—a versatile estimation problem with broad applications. Our research uncovers an inherent trade-off among measurement precision, security, and range within the system. This work establishes a new avenue for incorporating physical-layer security into sensing systems, thereby opening up exciting possibilities for future research in this field.

关键词： Quantum Fisher information Quantum cryptography Quantum engineering Quantum information processing with continuous variables Quantum measurements Quantum metrology Quantum parameter estimation Quantum sensing

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Enabling Scalable Photonic Tensor Cores with Polarization-Domain Photonic Computing

arXiv

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arXiv 2025年

作者： Shafiee, Amin Chen, Linhong Pasricha, Sudeep Yao, Jie Nikdast, Mahdi Department of Electrical and Computer Engineering Colorado State University Fort CollinsCO United States Department of Materials Science and Engineering University of California BerkeleyCA United States

We present a silicon-photonic tensor core using 2D ferroelectric materials to enable wavelength- and polarization-domain computing. Results, based on experimentally characterized material properties, show up to 83% im... 详细信息

关键词： Polarization

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Optimizing 3D Clothing Models for VR: A Deep Learning Approach to Triangle Count Reduction

Optimizing 3D Clothing Models for VR: A Deep Learning Approa...

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IEEE International Conference on Consumer Electronics-Taiwan (ICCE-TW)

作者： Surasachai Doungtap Varinya Phanichraksaphong Jenq-Haur Wang International Graduate Program of Electrical Engineering and Computer Science National Taipei University of Technology Taipei Taiwan Department of Computer Science and Information Engineering National Taipei University of Technology Taipei Taiwan

ISBN: (数字)9798350386844

ISBN: (纸本)9798350386851

This study presents a deep learning framework optimizing 3D clothing models for VR, using a CNN to significantly reduce the triangle count of models from DeepFashion3D and CAP-UDF datasets. Achieving a balance between efficiency and detail, it cuts triangle count from over 160,000 to below 4,000, maintaining high DPI. The approach automates optimization, promising scalability and efficiency in VR fashion, setting a foundation for future 3D content development, enhancing virtual garment realism and interactivity.

关键词： Deep learning Solid modeling Three-dimensional displays Scalability Clothing Optimization Consumer electronics

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