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IEEE Topical Meeting on electrical Performance of Electronic Packaging (EPEPS)

作者： A.W. Glaser M.B. Steer G.M. Shedd P.E. Russell P.D. Franzon Electronics Research Laboratory Department of Electrical and Computer Engineering North Carolina State University Raleigh NC USA Burleigh Instruments Fishers NY USA Department of Materials Science and Engineering North Carolina State University Raleigh NC USA

We present and novel method for the measurement of interconnect capacitance, atomic capacitance microscopy. We also present VLSI structures which allow correlation of ACM and traditional (VNA, TDR, direct capacitance)... 详细信息

关键词： Atomic force microscopy Atomic measurements Force measurement Capacitance measurement Probes Voltage Very large scale integration Integrated circuit interconnections Predictive models Instruments

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Gate-tunable cross-plane heat dissipation in single-layer transition metal dichalcogenides

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Physical Review Research 2020年第3期2卷 033470-033470页

作者： Zhun-Yong Ong Gang Zhang Yong-Wei Zhang Linyou Cao Department of Materials Science and Engineering North Carolina State University Raleigh North Carolina 27695 USA Department of Physics North Carolina State University Raleigh North Carolina 27695 USA and Department of Electrical and Computer Engineering North Carolina State University Raleigh North Carolina 27695 USA

Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS2 and WS2, and model their electronic TBC with different dielectric substrates (SiO2, HfO2, and Al2O3). Our results indicate that the electronic TBC is strongly dependent on the electron density, suggesting that it can be modulated by the gate electrode in field-effect transistors, and this effect is most pronounced with Al2O3. Our work paves the way for the design of novel thermal devices with gate-tunable cross-plane heat-dissipative properties.

关键词： Optical phonons Surface & interfacial phenomena Transition metal dichalcogenides

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Subwavelength-engineered Antislot Photonic Crystals in a Silicon Photonics Foundry for On-chip Communications

Subwavelength-engineered Antislot Photonic Crystals in a Sil...

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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Arnold, Kellen P. Allen, Joshua A. Halimi, Sami I. Ryder, Landen D. Afzal, Francis O. Bian, Yusheng Aboketaf, Abdelsalam Hirokawa, Takako Dezfulian, Kevin Rakowski, Michal Augur, Rod Nummy, Karen Weiss, Sharon M. Interdisciplinary Materials Science Program Vanderbilt University 2201 West End Ave NashvilleTN37235 United States Department of Electrical and Computer Engineering Vanderbilt University 2201 West End Ave NashvilleTN37235 United States NASA Goddard Space Flight Center Code 561 GreenbeltMD20771 United States GlobalFoundries 400 Stone Break Rd. Ext. MaltaNY12020 United States

ISBN: (纸本)9781957171395

We report scalable foundry fabrication and characterization of photonic crystal nanobeam waveguides incorporating subwavelength-scale dielectric antislot unit cells. This work enables enhanced light-matter interaction and three-fold improvement in VπL when incorporated in Mach-Zehnder modulators. CLEO 2024 © Optica Publishing Group 2024 © 2024 The Author(s)

关键词： Mach-Zehnder interferometers

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Origin of the Anisotropic Beer-Lambert Law from Dichroism and Birefringence in β-Ga2O3

arXiv

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arXiv 2024年

作者： Adnan, Md Mohsinur Rahman Schubert, Mathias Myers, Roberto C. Department of Electrical and Computer Engineering The Ohio State University ColumbusOH43210 United States Department of Materials Science Engineering The Ohio State University ColumbusOH43210 United States Department of Electrical and Computer Engineering University of Nebraska-Lincoln LincolnNE68588 United States NanoLund and Solid State Physics Lund University LundS-22100 Sweden

The anisotropic optical absorption edge of β-Ga2O3 follows a modified Beer-Lambert law having two effective absorption coefficients. The absorption coefficient of linearly polarized light reduces to the least absorbing direction beyond a critical penetration depth, which itself depends on polarization and wavelength. To understand this behavior, a Stokes vector analysis is performed to track the polarization state as a function of depth. The weakening of the absorption coefficient is associated with a gradual shift of linear polarization to the least absorbing crystallographic direction in the plane, which is along the a-exciton within the (010) plane or along the b-exciton in the (001) plane. We show that strong linear dichroism near the optical absorption edge causes this shift in β-Ga2O3, which arises from the anisotropy and spectral splitting of the physical absorbers i.e., excitons. The linear polarization shift is accompanied by a variation in the ellipticity due to the birefringence of β-Ga2O3. Analysis of the phase relationship between the incoming electric field to that at a certain depth reveals the phase speed as an effective refractive index, which varies along different crystallographic directions. The critical penetration depth is shown to be correlated with the depth at which the ellipticity is maximal. Thus, the anisotropic Beer-Lambert law arises from the interplay of both the dichroic and birefringent properties of β-Ga2O3 Copyright © 2024, The Authors. All rights reserved.

关键词： Gallium compounds

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Room-temperature spin-orbit torque switching in a manganite-based heterostructure

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Physical Review B 2022年第14期105卷 144419-144419页

作者： Liang Liu Guowei Zhou Xinyu Shu Changjian Li Weinan Lin Lizhu Ren Chenghang Zhou Tieyang Zhao Rui Guo Qidong Xie Han Wang Jing Zhou Ping Yang Stephen J. Pennycook Xiaohong Xu Jingsheng Chen Department of Materials Science and Engineering National University of Singapore Singapore 117575 Singapore Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education School of Chemistry and Materials Science Shanxi Normal University Taiyuan 041004 China Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen 518055 China Department of Physics Xiamen University Xiamen 361005 China Department of Electrical and Computer Engineering National University of Singapore Singapore 117575 Singapore Singapore Synchrotron Light Source (SSLS) National University of Singapore 5 Research Link Singapore 117603 Singapore Suzhou Research Institute National University of Singapore Suzhou 215123 China Chongqing Research Institute National University of Singapore Chongqing 401120 China Institute of Material Research and Engineering Agency for Science Technology and Research (A*STAR) Singapore 138634 Singapore

The oxide ferromagnet La0.67Sr0.33MnO3 (LSMO) possesses low saturation magnetization (Ms), a low magnetic damping constant (α), and high carrier spin polarization, which promise superior functionalities in spintronics devices. For applications, these devices are to be integrated into electronic circuits, which require the control of the magnetization of LSMO by electrical means. However, a reliable electrical switching method remains largely unexplored. Here, we study the current-induced spin-orbit torque (SOT) in an all-oxide SrIrO3/LSMO bilayer. We found the magnetization of a 15 nm LSMO can be switched by electrical current, as confirmed from both the electrical transport measurement and the magnetic optical measurement. By taking advantage of the strain-mediated magnetic anisotropy, the magnetic easy axis of LSMO was controlled to be either perpendicular or parallel to the charge current direction such that a type-y or a type-x SOT switching was achieved, respectively. The dampinglike SOT efficiency is characterized to be 0.15 at room temperature according to the harmonic Hall voltage analysis. We also studied the temperature dependences of the SOT effective field and current-induced switching. Our demonstration of the electrical switching of LSMO magnetization at room temperature may stimulate SOT studies in a wide variety of all-oxide systems.

关键词： Magnetic anisotropy Magnetization switching Spin torque Ferromagnets Transition metal oxides Magneto-optical Kerr effect Scanning transmission electron microscopy X-ray diffraction

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Statistical analysis of lifetimes of MIM capacitors with Monte Carlo simulation

Statistical analysis of lifetimes of MIM capacitors with Mon...

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2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017

作者： Zhu, Mingda Lian, Chuanxin Xing, Huili Grace Hanson, Allen School of Electrical and Computer Engineering Cornell University IthacaNY14850 United States MACOM Technology Solutions Inc. 100 Chelmsford St. LowellMA01851 United States Department of Materials Science and Technology Cornell University IthacaNY14850 United States Kavli Institute at Cornell for Nanoscale Science Cornell University IthacaNY14853 United States

The accuracy of the lifetime of MIM capacitors measured by the ramp-voltage method has been analyzed by Monte Carlo simulation. The uncertainties associated with the sample size, variation of lifetime distribution, voltage step size, and voltage sourcing error, have been evaluated by simulation. The quantitative results presented in this work can provide a guideline for choosing appropriate measurement parameters for accurate and efficient lifetime evaluation using the rampvoltage method.

关键词： Monte Carlo methods

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Statistical Model of Non-Uniform Emission/rom Polycrystalline Tungsten Cathodes

Statistical Model of Non-Uniform Emission/rom Polycrystallin...

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International Conference on Vacuum Electronics

作者： Dongzheng Chen Ryan Jacobs Vasilios Vlahos Dane Morvan John Booske Department of Materials Science and Engineering University of Wisconsin-Madison Madison WI USA L3 Technologies Electron Devices Division Torrance CA USA Department of Electrical and Computer Engineering University of Wisconsin-Madison Madison WI USA

We have constructed a model capturing the statistical nature of non-uniform thermionic electron emission from polycrystalline W cathodes. This model incorporates the proportion of different crystallographic emitting surfaces from commercial cathode samples via electron backscatter diffraction (EBSD), the effects of surface roughness from optical interferometry measurements, and surface-specific work function values calculated using density functional theory (DFT). Using this model, we aim to calculate 2D emission maps and the corresponding Miram curves for real cathodes. This model provides a pathway to understanding the complex physics of emission from inhomogeneous cathode surfaces, which is a key issue for the commercial production and use of impregnated cathodes in vacuum electronic devices.

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Ferromagnetic Epitaxial µ-Fe2O3 on β-Ga2O3: A New Monoclinic form of Fe2O3

arXiv

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arXiv 2019年

作者： Jamison, John S. May, Brelon J. Deitz, Julia I. Chien, Szu-Chia McComb, David W. Grassman, Tyler J. Windl, Wolfgang Myers, Roberto C. Department of Materials Science and Engineering Ohio State University 43210 United States Center for Electron Microscopy and Analysis Ohio State University 43212 United States Department of Electrical and Computer Engineering Ohio State University 43210 United States

Here we demonstrate a new monoclinic iron oxide phase (μ-Fe2O3), epitaxially stabilized by growth on (010) β-Ga2O3. Density functional theory (DFT) calculations find that the lattice parameters of freestanding μ-Fe2O3 are within ~1% of those of β-Ga2O3 and that its energy of formation is comparable to that of naturally abundant Fe2O3 polytypes. A superlattice of μ-Fe2O3/β-Ga2O3 is grown by plasma assisted molecular beam epitaxy, with resulting high-resolution x-ray diffraction (XRD) measurements indicating that the μ-Fe2O3 layers are lattice-matched to the substrate. The measured out-of-plane (b) lattice parameter of 3.12 ± 0.4 Å is in agreement with the predicted lattice constants and atomic-resolution scanning transmission electron microscopy (STEM) images confirm complete registry of the μ-Fe2O3 layers with β-Ga2O3. Finally, DFT modeling predicts that bulk μ-Fe2O3 is antiferromagnetic, while the interface region between μ-Fe2O3 and β-Ga2O3 leads to ferromagnetic coupling between interface Fe3+ cations selectively occupying tetrahedral positions. Magnetic hysteresis persisting to room temperature is observed via SQUID measurements, consistent with the computationally predicted interface magnetism. Copyright © 2019, The Authors. All rights reserved.

关键词： Lattice constants

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Topological Landau–Zener nanophotonic circuits

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Advanced Photonics 2023年第3期5卷 127-134页

作者： Bing-Cong Xu Bi-Ye Xie Li-Hua Xu Ming Deng Weijin Chen Heng Wei Fengliang Dong Jian Wang Cheng-Wei Qiu Shuang Zhang Lin Chen Huazhong University of Science and Technology School of Optical and Electronic InformationWuhan National Laboratory for OptoelectronicsWuhanChina The Chinese University of Hong Kong School of Science and EngineeringShenzhenChina CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology of ChinaNanofabrication LaboratoryCAS Key Laboratory for Nanosystems and Hierarchical FabricationCAS Key Laboratory for Nanophotonic Materials and DevicesBeijingChina National University of Singapore Department of Electrical and Computer EngineeringSingapore University of Chinese Academy of Sciences Center of Materials Science and Optoelectronics EngineeringBeijingChina The University of Hong Kong Department of PhysicsHong KongChina Peking University School of PhysicsState Key Laboratory for Mesoscopic PhysicsBeijingChina

Topological edge states(TESs),arising from topologically nontrivial phases,provide a powerful toolkit for the architecture design of photonic integrated circuits,since they are highly robust and strongly localized at the boundaries of topological *** is highly desirable to be able to control TES transport in photonic *** the coupling between the TESs in a finite-size optical lattice is capable of exchanging light energy between the boundaries of a topological lattice,hence facilitating the flexible control of TES ***,existing strategies have paid little attention to enhancing the coupling effects between the TESs through the finite-size ***,we establish a bridge linking the interaction between the TESs in a finite-size optical lattice using the Landau–Zener model so as to provide an alternative way to modulate/control the transport of topological *** experimentally demonstrate an edge-to-edge topological transport with high efficiency at telecommunication wavelengths in silicon waveguide *** results may power up various potential applications for integrated topological photonics.

关键词： topological edge states finite-size effect Landau-Zener model edge-to-edge topological transport nanophotonic integrated circuits

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Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

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Applied Physics Letters 2022年第17期120卷 172106-172106页

作者： Khachariya, Dolar Mita, Seiji Reddy, Pramod Dangi, Saroj Dycus, J. Houston Bagheri, Pegah Breckenridge, M. Hayden Sengupta, Rohan Rathkanthiwar, Shashwat Kirste, Ronny Kohn, Erhard Sitar, Zlatko Collazo, Ramón Pavlidis, Spyridon Department of Electrical and Computer Engineering North Carolina State University RaleighNC27695-7911 United States Adroit Materials Inc. 2054 Kildaire Farm Rd. CaryNC27518 United States EAG Eurofins Materials Science RaleighNC27606 United States Department of Materials Science and Engineering North Carolina State University RaleighNC27695-7919 United States

The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and it is demonstrated that native AlN substrates unlock the potential for Al-rich AlGaN to sustain large fields in such devices. We further study how Ohmic contacts made directly to a Si-doped channel layer reduce the knee voltage and increase the output current density. High-quality AlGaN growth is confirmed via scanning transmission electron microscopy, which also reveals the absence of metal penetration at the Ohmic contact interface and is in contrast to established GaN HEMT technology. Two-terminal mesa breakdown characteristics with 1.3 μm separation possess a record-high breakdown field strength of ∼11.5 MV/cm for an undoped Al0.6Ga0.4N-channel layer. The breakdown voltages for three-terminal devices measured with gate-drain distances of 4 and 9 μm are 850 and 1500 V, respectively. © 2022 Author(s).

关键词： High electron mobility transistors

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