The interaction between cell surface receptors and extracellular ligands is highly related to many physiological processes in living *** techniques have been developed to measure the ligand-receptor binding kinetics a...
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The interaction between cell surface receptors and extracellular ligands is highly related to many physiological processes in living *** techniques have been developed to measure the ligand-receptor binding kinetics at the single-cell ***,few techniques can measure the physiologically relevant shear binding affinity over a single cell in the clinical ***,we develop a new optical technique,termed single-cell rotational adhesion frequency assay(scRAFA),that mimics in vivo cell adhesion to achieve label-free determination of both homogeneous and heterogeneous binding kinetics of targeted cells at the subcellular ***,the scRAFA is also applicable to analyze the binding affinities on a single cell in native human *** its superior performance and general applicability,scRAFA is expected to find applications in study of the spatial organization of cell surface receptors and diagnosis of infectious diseases.
The phase velocity of capillary waves was measured using the Doppler shift of spatially separated beamlets carrying OAM. Each beamlet has a unique beat frequency and is generated using a Higher Order Bessel Beam Integ...
The phase velocity of capillary waves was measured using the Doppler shift of spatially separated beamlets carrying OAM. Each beamlet has a unique beat frequency and is generated using a Higher Order Bessel Beam Integrated in Time (HOBBIT) system.
The multipactor effect, caused by secondary electrons in resonance with an alternating electric field, leads to exponential electron multiplication that is damaging to RF devices in space. Our work therefore aims at u...
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This Special Issue of the IEEE Journal on Flexible Electronics (J-FLEX) showcases the expanded papers presented at the 2023 IEEE International Conference on Flexible Printable Sensors and Systems (FLEPS), held in Bost...
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Elastomer lattice structures provide tunable mechanical properties and full elastic recovery over large strains. However, the design of elastomer lattice materials can be challenging when the manufacturing process ind...
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Nearly two billion air-conditioning (AC) units are currently being used for space cooling worldwide. The majority of these ACs use R134a as the working fluid, a greenhouse gas (GHG) with a global warming potential (GW...
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Heat generation during the operation of lasers and amplifiers negatively affects a wide range of performance and packaging considerations. Accordingly, the thermal management of such systems remains of critical import...
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In recent years, Perovskites have been a very interesting breakthrough in the field of photovoltaics because of their excellent performance with easy and less complex synthesizability, and cost-effectiveness. This ins...
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ISBN:
(数字)9798350388282
ISBN:
(纸本)9798350388299
In recent years, Perovskites have been a very interesting breakthrough in the field of photovoltaics because of their excellent performance with easy and less complex synthesizability, and cost-effectiveness. This instance suggests a uniquely designed solar cell with a novel perovskite, Rb
2
NaGaBr
6
. The perovskite, used as the active layer, is analyzed through the First Principle Density Functional Theory (DFT) calculation, where the cell is simulated by the SCAPS-1D simulation tool showing a power conversion efficiency (PCE) of 26.86% for this single-junction solar cell. In order to achieve optimum efficiency, the effects of defect concentration and the thickness of the absorber layer are examined and adjusted. Here, the influence of the absorber thickness and defect concentration on fill factor, short-circuit current ($\mathrm{J}_{\mathrm{sc}}$), and open-circuit voltage ($\mathrm{V}_{\mathrm{oc}}$) were also examined in addition to their impact on PCE. Based on the insights gathered from the simulation of the designed cell, $\mathrm{FTO} / \mathrm{SnO}_{2} / \mathrm{Rb}_{2} \mathrm{NaGaBr}_{6} / \mathrm{CuI} / \mathrm{W}$, the best results were obtained at a thickness of 0.8μm. The simulation indicated that $\mathrm{J}_{\mathrm{sc}}=25.02 \mathrm{~mA} / \mathrm{cm}^{2}$, a fill factor (FF) of 84.01%, and $\mathrm{V}_{\text {oc }}=1.2777 \mathrm{~V}$, that leads to a PCE of 26.86%.
Intelligent reflecting surface (IRS) has recently stimulated an upsurge of research interest due to its capability of enhancing the spectral and energy efficiencies for future sixth generation (6G) wireless communicat...
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Light sources and photodetectors operating in the far- to midinfrared (FIR/MIR) band (8–12 µm, 0.15–0.1 eV) remain relatively poorly developed compared to their counterparts operating in the visible and near-in...
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Light sources and photodetectors operating in the far- to midinfrared (FIR/MIR) band (8–12 µm, 0.15–0.1 eV) remain relatively poorly developed compared to their counterparts operating in the visible and near-infrared ranges, despite extensive application potential for thermal imaging, standoff sensing, and other technologies. This is attributable in part to the lack of narrow-gap materials (<0.1 eV) with high optical gain and absorption. In this work, a narrow-gap semiconductor, Pb0.7Sn0.3Se, is demonstrated to exhibit an optical response >10× larger than that of HgxCd1−xTe (MCT), the dominant material for FIR/MIR photodetectors. A previous theoretical investigation indicated that chalcogen p and metal d band inversion in this material creates a Mexican hat band structure (MHBS), which results in a dramatic increase in the joint density of states at the optical transition edge compared to typical semiconductors. This prediction is experimentally validated here using single-crystal specimens of Pb0.7Sn0.3Se measured using temperature-dependent spectroscopic ellipsometry over a wavelength range 1.7–20 µm (0.73–0.062 eV). These measurements demonstrate a large enhancement in extinction coefficient and refractive index, which are characteristic of a MHBS in the vicinity of the absorption edge, in agreement with theoretical predictions. The realization of topological semiconductors with a MHBS is expected to lead to high-efficiency detectors operating in the FIR/MIR range.
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