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arXiv 2024年

作者： Zhuang, Shihao Zhang, Xufeng Zhu, Yujie Sun, Nian X. Eom, Chang-Beom Evans, Paul G. Hu, Jia-Mian Department of Materials Science and Engineering University of Wisconsin-Madison MadisonWI53706 United States Department of Electrical and Computer Engineering Northeastern University BostonMA02115 United States

Terahertz (THz) spin waves or their quanta, magnons, can be efficiently excited by acoustic phonons because these excitations have similar wavevectors in the THz regime. THz acoustic phonons can be produced using photoacoustic phenomena but typically have a low population and thus a relatively low displacement amplitude. The magnetization amplitude and population of the acoustically excited THz magnons are thus usually small. Using analytical calculations and dynamical phase-field simulations, we show that a freestanding metal/magnetic-insulator (MI)/dielectric multilayer can be designed to produce large-amplitude THz spin wave via cavity-enhanced magnon-phonon interaction. The amplitude of the acoustically excited THz spin wave in the freestanding multilayer is predicted to be more than ten times larger than in a substrate-supported multilayer. Acoustically excited nonlinear magnon-magnon interaction is demonstrated in the freestanding multilayer. The simulations also indicate that the magnon modes can be detected by probing the charge current in the metal layer generated via spin-charge conversion across the MI/metal interface and the resulting THz radiation. Applications of the freestanding multilayer in THz optoelectronic transduction are computationally demonstrated. © 2024, CC BY.

关键词： Multilayers

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A Composition-Based Predictive Model for the Transformation Strain of NiTi Shape Memory Alloys

SSRN

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SSRN 2024年

作者： Zadeh, Sina Hossein Brown, Timothy D. Qian, Xiaoning Karaman, Ibrahim Arroyave, Raymundo Department of Materials Science & Engineering Texas A&M University United States Sandia National Laboratories Department of Electrical & Computer Engineering Texas A&M University United States

This study presents a predictive model to estimate transformation strain in NiTi Shape Memory Alloys (SMAs) based on alloy composition. Utilizing lattice deformation theory, we computed theoretical transformation strain and compiled a comprehensive dataset of 3024 entries, covering various alloy compositions, deformation modes, and orientations. The model, built using the CatBoost gradient boosting algorithm, achieved an R2 score of 0.954 and a mean absolute error of 0.608% during validation. Deformation types, such as tension and compression, emerged as the dominant predictor, accounting for over half of the predictive power, highlighting the anisotropic and asymmetric behavior of SMAs. A significant correlation was identified between the λ2 parameter (the middle eigenvalue of the non-rotational part of the deformation matrix) and transformation strain, showing that greater phase compatibility corresponds to reduced transformation strain. The model’s precision across different alloys and deformation modes makes it a valuable tool for predicting transformation strain in NiTi SMAs. This work enhances the understanding of the relationship between composition and phase transformation characteristics in SMAs, offering a practical approach to designing and optimizing these materials for applications such as medical devices and solid-state actuation systems. © 2024, The Authors. All rights reserved.

关键词： Titanium alloys

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Data-Driven Study of Composition-Dependent Phase Compatibility in Niti Shape Memory Alloys

SSRN

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SSRN 2024年

作者： Zadeh, Sina Hossein Cakirhan, Cem Khatamsaz, Danial Broucek, John Brown, Timothy D. Qian, Xiaoning Karaman, Ibrahim Arroyave, Raymundo Department of Materials Science & Engineering Texas A&M University United States Sandia National Laboratories Department of Electrical & Computer Engineering Texas A&M University United States

The martensitic transformation in NiTi-based Shape Memory Alloys (SMAs) provides a basis for shape memory effect and superelasticity, thereby enabling applications requiring solid-state actuation and large recoverable shape changes upon mechanical load cycling. In order to tailor the transformation to a particular application, the compositional dependence of properties in NiTi-based SMAs, such as martensitic transformation temperatures and hysteresis, has been exploited. However, the compositional design space is large and complex, and experimental studies are expensive. In this work, we develop an interpretable piecewise linear regression model that predicts the λ2 parameter, a measure of compatibility between austenite and martensite phases, and an (indirect) factor that is well-correlated with martensitic transformation hysteresis, based on the chemical features derived from the alloy composition. The model is capable of predicting, for the first time, the type of martensitic transformation for a given alloy chemistry. The proposed model is validated by experimental data from the literature as well as in-house measurements. The results show that the model can effectively distinguish between B19 and B19' regions for any given composition in NiTi-based SMAs and accurately estimate the λ2 parameter. © 2024, The Authors. All rights reserved.

关键词： Martensitic transformations

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A roadmap for the commercialization of perovskite light emitters (August, 10.1038/s41578-022-00459-4, 2022)

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NATURE REVIEWS materials 2022年第10期7卷 833-833页

作者： Han, Tae-Hee Jang, Kyung Yeon Dong, Yitong Friend, Richard H. Sargent, Edward H. Lee, Tae-Woo Hanyang University Division of Materials Science and Engineering Seoul Republic of Korea (GRID:grid.49606.3d) (ISNI:0000 0001 1364 9317) Seoul National University Department of Materials Science and Engineering Seoul Republic of Korea (GRID:grid.31501.36) (ISNI:0000 0004 0470 5905) University of Toronto Department of Electrical and Computer Engineering Toronto Canada (GRID:grid.17063.33) (ISNI:0000 0001 2157 2938) University of Cambridge Cavendish Laboratory Cambridge UK (GRID:grid.5335.0) (ISNI:***) Seoul National University Department of Materials Science and Engineering Seoul Republic of Korea (GRID:grid.31501.36) (ISNI:0000 0004 0470 5905) Seoul National University School of Chemical and Biological Engineering Institute of Engineering Research Research Institute of Advanced Materials Soft Foundry Seoul Republic of Korea (GRID:grid.31501.36) (ISNI:0000 0004 0470 5905)

Metal halide perovskites (MHPs) possess advantageous optoelectronic properties, so perovskite emitters and perovskite light-emitting diodes (PeLEDs) are promising candidates for next-generation high-colour-purity displays and lighting applications. Within the past 5 years, the luminescence efficiency of MHP emitters and PeLEDs has increased rapidly. However, the industrial applications of perovskites are impeded by several technical bottlenecks, such as insufficient colour reproducibility, low operational stability, toxicity and limited large-scale production. In this Review, we survey the current status of MHP emitters and PeLEDs and provide a technical roadmap to highlight the goals and requirements for them to successfully enter the markets for vivid displays with high colour purity, augmented and virtual reality displays and general and special lighting. We also set out steps for future research in MHPs and their device *** perovskite light emitters hold promise for next-generation high-colour-purity displays and lighting applications. This Review surveys the outstanding scientific issues and the strategies to increase the efficiency and stability of perovskite light-emitting devices, tracing a roadmap for their mass production and commercialization.

关键词： Perovskite

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Surface Oxidisation Layer Identification of Indium Nitride Nanoparticles via s-SNOM

Surface Oxidisation Layer Identification of Indium Nitride N...

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International Conference on Infrared and Millimeter Waves

作者： X. Liu R. Prinja T. Vincent B. Gholizadeh D. Johnson N. P. Kherani J. L. Boland Department of Electrical and Electronic Engineering Photon Science Institute University of Manchester Manchester United Kingdom Department of Electrical & Computer Engineering University of Toronto Toronto Canada Department of Materials Science & Engineering University of Toronto Toronto Canada

InN materials have been widely used in optoelectronic devices, namely red LEDs. However, the surface oxidization introduced during growth and by air exposure can change their bandgap and mobility drastically, affecting device performance. In this study, we employed a surface-sensitive technique, scattering-type scanning near-field optical microscopy (s-SNOM) to investigate the oxidization level of InN nanoparticles and demonstrate how tapping amplitude and demodulation order affect the near-field response.

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Enhancing memristor performance with 2D SnO_(x)/SnS_(2) heterostructure forneuromorphic computing

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science China materials 2025年第2期68卷 581-589页

作者： Yangwu Wu Sifan Li Yun Ji Zhengjin Weng Houying Xing Lester Arauz Travis Hu Jinhua Hong Kah-Wee Ang Song Liu State Key Laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and EngineeringSoutheast UniversityNanjing 210096China Department of Mechanical Engineering California State UniversityLos Angeles5151 State University DrLos AngelesCA 90032USA College of Materials Science and Engineering Hunan UniversityChangsha 410082China Shenzhen Research Institute Hunan UniversityShenzhen 518000China

Layered metal dichalcogenides (LMDs) neuromorphic memristor devices offer a promising alternative toconventional von Neumann architectures, addressing speedand energy efficiency constraints. However, challenges remainin controlling resistive switching and operating voltage incrystalline LMD memristors due to environmental stabilization issues, which hinder neural network hardware development. Herein, we introduce an optimization method formemristor operation by controlling oxidation through ozonetreatment, creating a SnO_(x)/SnS_(2) resistive layer. These optimized memristors demonstrate low switching voltages (~1 V),rapid switching speeds (~20 ns), high switching ratios (10^(2)),and the ability to emulate synaptic weight plasticity. Crosssectional transmission electron microscopy and energy-dispersive X-ray spectroscopy identified defects and Ti conductive filaments in the resistive switching layer, contributingto uniform switching and minimized operating variation. Thedevice achieved 90% accuracy in MNIST handwritten recognition, and hardware-based image convolution was successfully implemented, showcasing the potential of SnO_(x)/SnS_(2)memristors for neuromorphic applications.

关键词： SnO_(x)/SnS_(2) oxidation layered metal dichalcogenides convolutional image processing neuromorphic computing

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Modified Kelvin-Voigt fractional derivative model for viscoelasticity measurement in optical coherence elastography

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Chinese Optics Letters 2025年第1期23卷 93-101页

作者： Chenming Yang Zhongliang Li Nan Nan Teng Liu Yaoli Luo Xiangzhao Wang Advanced Light Source and System R&D Center Department of Advanced Optical and Microelectronic EquipmentShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Optical-Electrical and Computer Engineering University of Shanghai for Science and TechnologyShanghai 200093China State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringZhejiang UniversityHangzhou 310027China

Optical coherence elastography(OCE)can quantitatively obtain the viscoelasticity of tissues using rheological models and is widely applied to the clinical diagnosis of ***,commonly used rheological models in OCE do not account for the distinctive dependence of high-frequency storage and loss moduli on frequency in tissues,which results in the rheological models failing to accurately measure the viscoelastic properties of *** this paper,a modified Kelvin-Voigt fractional derivative model is presented based on the power-law behavior of soft tissues and the dependence of high-frequency complex shear modulus on frequency in living *** the rheometer and OCE tests,the modified model can provide the prediction of the power-law relationship between the low-frequency shear viscosity and frequency;compared with the Kelvin-Voigt and Kelvin-Voigt fractional derivative models,the modified model has a higher goodness-of-fit(accuracy>96%)for the high-frequency storage moduli of gelatin ***,the proposed model can reduce the root mean square error of fit by approximately 83%for the high-frequency(1–128 kHz)storage modulus of the polydimethylsiloxane phantoms obtained from publicly available ***,the modified model accurately predicts the mechanical properties of biomimetic materials over a wide frequency range,with the potential to more accurately reflect pathological changes in tissues.

关键词： optical coherence tomography optical coherence elastography viscoelasticity rheological model

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Impact of In and Ga Fractions in Lattice-Matched InAlGaN Barrier Layer on Performance of InAlGaN/GaN MISHEMT

Impact of In and Ga Fractions in Lattice-Matched InAlGaN Bar...

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2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024

作者： Langpoklakpam, Catherine Hsiao, Yi-Kai Lin, Chun-Hsiung Chang, Edward Yi Kuo, Hao-Chung College of Electrical and Computer Engineering National Yang-Ming Chiao Tung University Department of Photonics Institute of Electro-Optical Engineering Hsinchu30010 Taiwan Hon Hai Research Institute Semiconductor Research Center Taipei11492 Taiwan International College of Semiconductor Technology National Yang-Ming Chiao Tung University Hsinchu30010 Taiwan National Yang-Ming Chiao Tung University Department of Materials Science and Engineering Hsinchu30010 Taiwan

ISBN: (纸本)9798350360349

This study investigates the impact of lattice-matched InAlGaN (w/i GaN) top barrier layer for diverse In and Al fractions on electrical characteristics of InAlGaN/GaN MISHEMT. To maintain lattice matching with GaN, the In and Al content must increase or decrease simultaneously. Increasing In and Al fractions lead to a more negative threshold voltage and higher drain current. This can be ascribed to creating a more profound quantum well and improving carrier confinement within the two-dimensional electron gas (2DEG). Conversely, as In and Al mole fractions reduce, the on-resistance of the devices decreases due to reduced 2DEG confinement. This work suggests that the performance of InAlGaN/GaN MISHEMT can be effectively optimized by adjusting the fractions of In and Al in the lattice-matched InAlGaN barrier layer. © 2024 IEEE.

关键词： Indium compounds

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Optoelectric Raman Nanosensors: Overcoming Intrinsic Limit in Nano-biosensing

Research Square

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Research Square 2024年

作者： Lian, Bin Li, Huaizhi Guo, Jianhe Fan, Donglei Emma Materials Science and Engineering Program Texas Materials Institute The University of Texas AustinTX78712 United States Walker Department of Mechanical Engineering Texas Materials Institute The University of Texas at Austin AustinTX78712 United States Chandra Family Department of Electrical and Computer Engineering The University of Texas at Austin AustinTX78712 United States

It is intrinsically difficult to detect low-concentration biomolecules with both ultra-sensitivity and high speed for early-stage disease diagnosis. The challenge originates from the small size of nanosensors, which enables ultra-sensitivity biosensing, while also substantially increases the detection time of dilute molecules. in this work, we report an original optoelectric sensing scheme, along with an innovative device design and a strategic fabrication approach to overcome such a challenge in biosensing. The proposed scheme exploits the profound optoelectric effect of semiconductor silicon nanowires, which can readily enrich trace-amounts of biomolecules at the point of laser and simultaneously detect Raman signals of focused molecules. The device design includes large arrays of silicon nanorods with electrodes integrated at their roots, and surface-distributed dense plasmonic silver nanoparticles for surface-enhanced Raman spectroscopy (SERS) detection. Operating at only -0.8 V in an electrochemical cell, these optoelectric nanosensors readily achieve a 150-fold signal enhancement, improving the detection limit of probing molecules, adenine, by five orders of magnitude, to 0.6 fM. The enhancement effect is robust, observed across concentrations from 1 μM to 1 fM. The working mechanism is general, not only for detecting small molecules, such as adenine, but also for large charged molecules, such as Vertebrate DNA. The underlying novel mechanism is unraveled by multiscale numerical simulations and calculations. This research, addressing an arduous bottleneck issues in nanobiosensing, is expected to inspire a new class of biochemical sensors, important for the practical detection of trace-amount biochemicals in solution, important for clinic relevant early-stage disease diagnostics. © 2024, CC BY.

关键词： Nanorods

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Unraveling the transformation pathway of the β to γ phase transition in Ga2O3 from atomistic simulations

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Physical Review materials 2025年第1期9卷 014601-014601页

作者： Channyung Lee Michael A. Scarpulla Joel B. Varley Elif Ertekin Department of Mechanical Science and Engineering University of Illinois at Urbana-Champaign Urbana Illinois 61801 USA Department of Materials Science and Engineering University of Utah Salt Lake City Utah 84112 USA Department of Electrical and Computer Engineering University of Utah Salt Lake City Utah 84112 USA Lawrence Livermore National Laboratory Livermore California 94550 USA Materials Research Laboratory University of Illinois at Urbana-Champaign Urbana Illinois 61801 USA

Defect spinel γ−Ga2O3 is the least stable polymorph of Ga2O3, so its frequent appearance as a structural defect within or on the surface of monoclinic β−Ga2O3 remains a mystery. Through first-principles calculations, we explore potential pathways for the phase transition from β−Ga2O3 to γ−Ga2O3, and examine two key driving forces: tensile strain and Ga deficiency. When configurational entropy contributions to phase energies are included, the γ phase becomes energetically competitive with the β phase, with the free energy difference between these phases diminishing even further under Ga-deficient conditions. Notably, a stability crossover occurs at room temperature at high vacancy concentrations ([VGa3−]>3%). A simple model β→γ transformation pathway is identified, comprising two primary reactions, that enables the formation of the γ phase via simultaneous migration of Ga atoms from tetrahedral lattice sites to octahedral interstitial positions. The transformation barriers are prohibitively large in pristine Ga2O3, but can be substantially reduced by: (1) the presence of Ga vacancies, (2) elongational strains along the crystallographic a-axis, and (3) when volumetric relaxations are possible during transformation. These results elucidate prior experimental observations, where γ−Ga2O3 is seen on damaged surfaces or in highly n-type β−Ga2O3 environments, which support Ga deficiency and mechanical strain. The insights into the driving forces and mechanisms of γ−Ga2O3 formation enhance understanding of how localized strain and nonequilibrium defect concentrations may facilitate its formation from the β phase.

关键词： Free energy

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