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243rd ECS Meeting

作者： Bhatlawande, A. Hu, G. Nicholas, J.D. Hogan, T.P. Department of Electrical and Computer Engineering Michigan State University East LansingMI48824 United States Department of Chemical Engineering and Materials Science Michigan State University East LansingMI48824 United States Fraunhofer USA Center Midwest East LansingMI48824 United States

ISBN: (纸本)9781607685395

Here, a van der Pauw method was used to compare the 25-450oC sheet resistivity of Ag-Ni electrical contacts to those made from commercially-available Heraeus C8710 and DAD-87 silver circuit pastes. In addition, a circular transfer length method was used to compare the 25-600oC contact resistivity of Ag-Ni, Heraeus C8710, and DAD-87 on lanthanum strontium manganate (LSM). After 10 hours at 750oC in air, the Ag-Ni sheet resistivity was nearly double that of the commercial Ag pastes. However, after 10 hours at 750oC in air, the Ag-Ni to LSM contact resistivity was between that of Heraeus C8710 and DAD-87. The low Ag-Ni sheet resistivity of ~10-6 ohm-cm, the low Ag-Ni to LSM contact resistivity of ~10-4 ohm-cm2, and the previously-observed >10 times higher adhesion strength of Ag-Ni (compared to Heraeus C8710 or DAD-87) on ceramic substrates, suggests that Ag-Ni may be useful for a variety of high-temperature electronic circuit/current collector applications. © The Electrochemical Society.

关键词： Timing circuits

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Synthetic materials with high pockels coefficient for plasmonic modulators

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Optical materials Express 2025年第6期15卷 1356-1370页

作者： Keller, Killian Dober, Marco Winiger, Joel Schneuwly, Arnaud Yu, Zhuoyang Baumann, Michael Doderer, Michael Nishiwaki, Shiro Romanyuk, Yaroslav E. Khurgin, Jacob B. Leuthold, Juerg ETH Zürich Gloriastrasse 35 Zurich8092 Switzerland Department of Materials Science and Engineering National University of Singapore 9 Engineering Drive 1 #03-09 EA 117575 Singapore Laboratory of Thin Films and Photovoltaics Empa Swiss Federal Laboratories for Materials Science and Technology Überlandstrasse 129 Dübendorf8600 Switzerland Department of Electrical and Computer Engineering John Hopkins Whiting School of Engineering 3400 North Charles Street BaltimoreMD21218 United States

We present simulations of Pockels materials based on nonlinearities arising from intersubband transitions (ISBT). To elevate the Pockels coefficient to the order of nm/V, the ISBT resonance is tuned close to the operation point. This comes at the expense of increased material losses due to quasi-resonant operation. Such Pockels materials are of high interest for implementation in plasmonic modulators. In these modulators the higher material losses do not significantly impact the device performance, as overall losses are dominated by plasmonic waveguide losses. With this approach, voltage-loss-length (VπLα) products on the order of ∼15 V dB may be achieved with plasmonic losses. Such efficiencies are comparable to those with photonic modulators. The Pockels effect coefficient calculations have been performed using self-consistent Schrödinger-Poisson simulations with consideration of many-body effects. Furthermore, we investigated the influence of RF field screening and surface roughness on the efficiency of the ISB transition-mediated Pockels materials. © 2025 Optica Publishing Group (formerly OSA). All rights reserved.

关键词： Light modulation

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Exploring the science and Art of UAV Light Painting: From Equations and Pixels to Long-Exposure Photography

Exploring the Science and Art of UAV Light Painting: From Eq...

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International Conference on Unmanned Aircraft Systems (ICUAS)

作者： Leonardo A. Fagundes-Junior Celso O. Barcelos Raquel F. Vassallo Alexandre S. Brandão Department of Electrical Engineering Robotics Specialization Center Graduate Program on Computer Science Federal University of Viçosa Viçosa MG Brazil Department of Electrical Engineering Federal University of Espirito Santo Vitória ES Brazil

ISBN: (数字)9798350357882

ISBN: (纸本)9798350357899

The use of Unmanned Aerial Vehicles (in short, UAVs, aka drones) for cultural and entertainment purposes, such as drone light shows, has grown exponentially. One such innovative and creative application is the visual arts using drones to explore long-exposure photography. Light painting are generally performed indoors and outdoors in a dedicated space with a human using a moving light source to create spectacular images and save the movement perception in a picture. In this work, we propose a robotic perception system designed to choreograph UAV movements based on time-parametric curves or image edges, serving as reference motions. Our framework begins by processing a digital image, extracting its contours through boundary tracing, and subsequently generating a safe, navigable, and precise path for UAV motion planning. This process involves optimizing waypoints within the UAV workspace to determine a feasible trajectory that encompasses all designated points or computes safe trajectories utilizing established mathematical equations. The validation of the motion planning is performed through light painting, where the UAV can either fly through the motion reference to mimic the original image. The generated trajectories on light painting mode by physical robots are compared against the ground-truth demonstrating the accuracy of the applied control scheme.

关键词： Photography Visualization Art Autonomous aerial vehicles Trajectory Planning Robots

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The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

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Journal of Electronic materials 2023年第2期52卷 1391-1399页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Hsu, Heng-Tung Chen, Ke-Horng Lien, Der-Hsien Lin, Wen-Chin Yu, Tien-Han Chiu, Yu-Sheng Godwinraj, D. Godfrey, D. Wu, Chien-Hung International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Electronics National Yang Ming Chiao Tung University Hsinchu Taiwan Institute of Microelectronics National Cheng Kung University Tainan Taiwan Department of ECE Amal Jyothi College of Engineering Kerala Kottayam India Department of Optoelectronics and Materials Engineering Chung Hua University Hsinchu Taiwan Department of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India National Applied Research Laboratories Hsinchu Taiwan

The impact of hot carrier injection (HCI) on the performance of standard and low-VT FinFETs are investigated and benchmarked with each other. For this investigation, these FinFETs were fabricated with various gate lengths (L) from 16 to 36 nm. HCI-induced transconductance degradation in standard devices for gate length variations of 36 nm down to 16 nm was 75%, while it was 35% for low-VT devices. Similarly, the degradation of threshold voltage in standard devices for gate length variations of 36 nm down to 16 nm was 39%, while it was 36% for low-VT device. In this work, as the device is subject to HCI, we found that: (1) short-channel devices cause severe degradation on the threshold voltage and transconductance (gm) compared to long-channel devices, owing to the higher electric field for short-channel devices at the gate edge, (2) standard devices exhibit a more stable threshold voltage than that of low-VT power devices, since the TiN barrier layer prevents Al atom diffusion into the HfO2 layer, and (3) the transconductance efficiency of standard devices is better than that of low-VT power devices. Further, the lower-VT devices show lower transconductance degradation than standard devices. However, the transconductance degradation of the long-channel standard and low-VT devices are the same. Compared to short-channel low-VT devices, extended-channel standard devices are more immune to the HCI effect. © 2022, The Minerals, Metals & materials Society.

关键词： Threshold voltage

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Arabic text sentiment analysis and emotion classification using transformers

Arabic text sentiment analysis and emotion classification us...

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Electronics, Communications, and Computations (JAC-ECC), International Japan-Africa Conference on

作者： Nada Mossad Youssef Mohamed A Fares Ahmed B. Zaky Egypt-Japan University of Science and Technology (E-JUST) Alexandria Egypt The Department of Electrical Engineering The Computer Systems Engineering Program Faculty of Engineering at Shoubra Benha University

Sentiment analysis and emotion classification are two crucial components of natural language processing (NLP), which have been widely explored in recent years due to their broad applications. Sentiment analysis aims to identify the polarity of written texts, ranging from positive to negative. Meanwhile, emotion classification is focused on recognizing and categorizing the emotional states expressed in the text. To achieve a deeper understanding of sentiments and emotions, it's essential to utilize models like BERT transformers that can effectively interpret the context. The process begins with data preprocessing, including tokenization and noise removal, followed by fine-tuning techniques to adapt the BERT model to the proposed tasks. We employed the BERT model on four datasets obtained from various sources, including Twitter, news websites, and restaurant reviews, where each dataset represents a distinct Arabic dialect. Our proposed model outperforms commonly used techniques like LSTM and CNN, yielding superior results. Despite the progress made, there are still challenges to overcome, such as dealing with Arabic diacritics, the new Arabic Arabizi, which uses Latin characters, and handling Arabic idioms. Further research is required to address these challenges adequately.

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WIDE FIELD OF VIEW LARGE APERTURE META-DOUBLET EYEPIECE

arXiv

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arXiv 2024年

作者： Wirth-Singh, Anna Fröch, Johannes E. Yang, Fan Martin, Louis Zhang, Hualiang Tanguy, Quentin T. Zhou, Zhihao Huang, Luocheng John, Demis D. Stamenic, Biljana Hu, Juejun Gu, Tian Majumdar, Arka Department of Physics University of Washington SeattleWA98195 United States Department of Electrical and Computer Engineering University of Washington SeattleWA98195 United States Department of Materials Science and Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Department of Electrical and Computer Engineering University of Massachusetts LowellMA01854 United States Department of Electrical and Computer Engineering University of California Santa BarbaraCA93106 United States

Wide field of view and light weight optics are critical for advanced eyewear, with applications in augmented/virtual reality and night vision. Conventional refractive lenses are often stacked to correct aberrations at wide field of view, leading to limited performance and increased size and weight. In particular, simultaneously achieving wide field of view and large aperture for light collection is desirable but challenging to realize in a compact form-factor. Here, we demonstrate a wide field of view (greater than 60◦) meta-optic doublet eyepiece with an entrance aperture of 2.1 cm. At the design wavelength of 633 nm, the meta-optic doublet achieves comparable performance to a refractive lens-based eyepiece system. This meta-doublet eyepiece illustrates the potential for meta-optics to play an important role in the development of high-quality monochrome near-eye display and night vision systems. © 2024, CC BY.

关键词： Vision

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3D Finite Thermal Modelling of SrSnO3 Field Effect Transistors

3D Finite Thermal Modelling of SrSnO3 Field Effect Transisto...

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Device Research Conference

作者： Bivek Bista Jiaxuan Wen Prafful Golani Fengdeng Liu Tristan Truttmann Bharat Jalan Steven Koester Georges Pavlidis School of Mechanical Aerospace and Manufacturing Engineering University of Connecticut Storrs CT USA Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN USA Department of Chemical Engineering and Materials Science University of Minnesota Minneapolis MN USA

ISBN: (数字)9798350373738

ISBN: (纸本)9798350373745

SrSnO 3 (SSO) is an ultra-wide bandgap (≈ 4.1 eV) semiconductor that has potential applications in high power electronics and DUV optoelectronics [1] . However, the thermal properties of doped SSO thin films have not been extensively studied. Due to its high bandgap, self-heating can severely limit the device’s performance and reliability. This study reports the thermal transport characteristics of SSO based metal-semiconductor field-effect transistors (MESFETs) through 3D finite modelling and compares them with experimental data obtained via Transient Thermoreflectance Imaging (TTI). TTI can be used to obtain surface temperature maps with high spatial (≈ 410 nm) and temporal (≈ 50 ns) resolution [2] , [3] . Therefore, the TTI technique was used to extract the gate and drain metal surface temperature under pulsed biasing (300 μs pulse width with 10% duty cycle), whereas the steady state temperature rise was numerically evaluated using a 3D Finite Element (FE) model in ANSYS Workbench.

关键词： Solid modeling Three-dimensional displays Temperature Photonic band gap Thermoreflectance imaging Numerical models Finite element analysis

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Anisotropy of two-dimensional ReS_(2)and advances in its device application

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Rare Metals 2021年第12期40卷 3357-3374页

作者： Ya-Di Cao Ying-Hui Sun Su-Fei Shi Rong-Ming Wang Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface ScienceSchool of Mathematics and PhysicsUniversity of Science and Technology BeijingBeijing100083China Department of Chemical and Biological Engineering Rensselaer Polytechnic InstituteTroyNY 12180USA Department of Electrical Computer and Systems EngineeringRensselaer Polytechnic InstituteTroyNY 12180USA

Two-dimensional(2D)transition metal dichalcogenides(TMDCs)have attracted growing interest regarding their potential applications in next-generation electronic and optoelectronic *** to their atomic thickness and tunable bandgap,they exhibit unique mechanical,electrical,and optical *** a specific member of the TMDC family,rhenium disulfide(ReS_(2))has stimulated intensive interest due to its anisotropic crystal structure,weak inter-layer coupling,and anisotropic electrical and optical *** this review,we summarize the distinct crystal structure and intrinsic anisotropic properties of ReS_(2),followed by an introduction to its synthesis *** current applications of ReS_(2)and its heterojunctions are presented based on its anisotropic *** review not only provides a timely summary of the current applications of ReS_(2)and its heterojunctions,but also inspires new approaches to develop other innovative devices based on 2D materials with a low lattice symmetry.

关键词： Transition metal dichalcogenides(TMDCs) Rhenium disulfide Anisotropic property Heterojunction Functional device

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First write pulse-induced interface damage in ferroelectric field-effect transistors

First write pulse-induced interface damage in ferroelectric ...

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IEEE International Workshop Integrated Reliability

作者： Priyankka Gundlapudi Ravikumar Chinsung Park Prasanna Venkatesan Ravindran Nashrah Afroze Mengkun Tian Winston Chern Suman Datta Shimeng Yu Souvik Mahapatra Asif Khan School of Electrical and Computer Engineering Georgia Institute of Technology GA USA Institute of Materials GA USA School of Material Science and Engineering Georgia Institute of Technology GA USA Department of Electrical Engineering Indian Institute of Technology Bombay Mumbai India

ISBN: (数字)9798331517168

ISBN: (纸本)9798331517175

We report the first direct experimental evidence that the first write pulse (cycle 1) generates more than half of the total traps generated until the complete collapse of the memory window at cycle $10^{4}-10^{5}$, in ferroelectric field effect transistors (FEFETs). This conclusion is reached by tracking the generated traps by a combination of subthreshold slope and charge pumping measurements in a Ferroelectric field-effect transistor and an equivalent standard MOSFET of same effective oxide thickness (EOT). We also find that with continued cycling, traps get generated more toward the bulk of the stack away from the Si/SiO 2 interface. We show that: (1) the first switch effect leads to nearly 50% of the total trap density $\left(\mathrm{N}_{i t}\right)$ near the Si/SiO 2 interface until memory window closure (2) with further bipolar cycling, damage happens both at and away from Si/SiO 2 interface.

关键词： Degradation Charge pumps MOSFET Current measurement Switches Logic gates Frequency measurement FeFETs Charge measurement Thickness measurement

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High Spatial Resolution Terahertz Time-Domain Imaging of Murine Pancreatic Ductal Adenocarcinoma Tissues

High Spatial Resolution Terahertz Time-Domain Imaging of Mur...

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2023 Conference on Lasers and Electro-Optics, CLEO 2023

作者： Chakraborty, Debamitra Mills, Bradley N. Cheng, Jing Komissarov, Ivan Gerber, Scott Sobolewski, Roman Materials Science Graduate Program University of Rochester RochesterNY14627-1299 United States Laboratory for Laser Energetics University of Rochester RochesterNY14623 United States Department of Surgery University of Rochester Medical Center RochesterNY14642 United States Department of Electrical and Computer Engineering University of Rochester RochesterNY14627-0231 United States

We developed a terahertz time-domain spectroscopy system to generate high-resolution 2-dimensional images of paraffin-embedded murine pancreatic ductal adenocarcinoma tissues using the refractive index and absorption ... 详细信息

ISBN: (纸本)9781957171258

关键词： Tissue

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