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Convergent effects of peptides on the initiation of feeding motor programs in the mollusk Aplysia

Journal of Neurophysiology 2025年第5期133卷 1368-1379页

作者： Evans, Colin G. Barry, Michael A. Reaver, Carrie N. Patel, Paras R. Chestek, Cynthia A. Perkins, Matthew H. Jing, Jian Cropper, Elizabeth C. Department of Neuroscience Friedman Brain Institute Icahn School of Medicine at Mount Sinai New York NY United States Department of Biomedical Engineering Biointerfaces Institute University of Michigan Ann Arbor MI United States Department of Electrical Engineering and Computer Science Neurosciences Program Robotics Program University of Michigan Ann Arbor MI United States State Key Laboratory of Pharmaceutical Biotechnology Institute for Brain Sciences Chemistry and Biomedicine Innovation Center Jiangsu Engineering Research Center for MicroRNA Biology and Biotechnology Advanced Institute for Life Sciences School of Life Sciences Nanjing University Nanjing China

Neuropeptides configure the feeding network of Aplysia. For example, egestive activity is promoted by small cardioactive peptide (SCP), and ingestive activity is promoted by a combination of feeding circuit activating peptide (FCAP) and cerebral peptide 2 (CP-2). In addition, SCP and FCAP/CP-2 have a common network effect that does not contribute to motor program specification. They increase the excitability of an interneuron, B63. In this report, we further characterized the effects of peptides on B63. We performed voltage-clamp experiments and used a step protocol to look at steady-state currents. We found that SCP and FCAP/CP-2 both induced an inward current that was virtually absent in low-sodium saline. Previous work has established that B63 is unusual in the feeding circuit in that subthreshold depolarizations are autonomously generated that can trigger motor programs. Here, we show that this autonomous activity is more frequent in the presence of peptides. Previous studies have also shown that activity of the feeding central pattern generator (CPG) can be initiated by neurons that excite B63, e.g., by cerebral buccal interneuron 2 (CBI-2), a projection neuron that triggers biting-like motor programs. Here, we show that the latency of CBI-2-induced activity is decreased by stimulation of the esophageal nerve (EN) (which releases endogenous SCP). These results, taken together with previous results, indicate that peptides that act divergently to configure network activity additionally act convergently to promote motor program induction. We present data that suggest that this arrangement facilitates brief switches between ingestive and egestive motor activity. © 2025 The Authors.

关键词： central pattern generator invertebrate modulation motor program neuropeptide

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Initial Work on Ultrafast Photoluminescent Surface Heating Optical Thermometry (UP-SHOT)

Initial Work on Ultrafast Photoluminescent Surface Heating O...

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AIAA science and Technology Forum and Exposition, AIAA SciTech Forum 2025

作者： Collins, Noelle M. Klesko, Joseph P. Brener, Igal Norden, Tenzin McClintock, Luke M. Padmanabhan, Prashant Feezell, Daniel Winters, Caroline A. Materials Science Non-destructive Evaluation and Development Sandia National Laboratories AlbuquerqueNM United States Materials Science Thin Films and Packaging Sandia National Laboratories AlbuquerqueNM United States Optical Engineering Microsystems Engineering Science and Applications Sandia National Laboratories AlbuquerqueNM United States Center for Integrated Nanotechnologies Los Alamos National Laboratory Los AlamosNM United States Department of Electrical and Computer Engineering University of New Mexico AlbuquerqueNM United States Sandia National Laboratories AlbuquerqueNM United States

ISBN: (纸本)9781624107238

Ultrafast (GHz) thermometry requires considerations of signal-to-noise, heat conduction, and temperature sensitivity. Ultrafast Photoluminescent Surface Heating Optical Thermometry (UP-SHOT) exploits the subnanosecond excitonic response of zinc oxide. Time-resolved photoluminescence is presented and discussed. © 2025, American Institute of Aeronautics and Astronautics Inc, AIAA. All rights reserved.

关键词： Heat conduction

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Unprecedented enhancement of piezoelectricity of wurtzite nitride semiconductors via thermal annealing

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Nature Communications 2025年第1期16卷 1-9页

作者： Mondal, Shubham Tanim, Md Mehedi Hasan Baucom, Garrett Dabas, Shaurya S. Gao, Jinghan Liu, Jiangnan Ye, Zhengwei Gaddam, Venkateswarlu Ross, Aiden Chen, Long-Qing Kim, Honggyu Tabrizian, Roozbeh Mi, Zetian Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI United States Department of Materials Science and Engineering University of Florida Gainesville FL United States Electrical and Computer Engineering Department University of Florida Gainesville FL United States Department of Materials Science and Engineering The Pennsylvania State University University Park PA United States

Incorporating rare-earth elements into wurtzite nitride semiconductors, such as scandium-alloyed aluminum nitride (ScAlN), significantly enhances the piezoelectric response, which is vital for a broad range of acoustic, electronic, photonic, and quantum applications. To date, however, the measured piezoelectric response of nitride semiconductors is far below what theory has predicted. Herein, we demonstrate a simple, scalable, post-growth thermal annealing process that can dramatically boost the piezoelectric response of ScAlN. We achieve a 3.5-fold increase in the piezoelectric modulus, d₃₃ for ScAlN, from 12.3 pC/N in the as-grown state to 45.5 pC/N, which is eight times larger than that of AlN commercially used in 5 G cellphones. The observed enhancement is unambiguously confirmed by three separate measurement techniques. Detailed material characterization techniques reveal that optimized annealing conditions significantly improve the macroscopic structural quality, achieving a more homogeneous and ordered domain orientation, and reduces the lattice parameter ratio (c/a) in the wurtzite crystal structure. The dramatic enhancement of d₃₃ in ScAlN thin films promises extreme frequency scaling opportunities for bulk acoustic wave resonators for beyond-5 G applications. © The Author(s) 2025.

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Integrating Sustainability and Industry 4.0: A Framework for Sustainable Logistics 4.0

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Circular Economy and Sustainability 2025年 1-39页

作者： Di Nardo, Mario Gallab, Maryam Murino, Teresa Wu, Jing Pandey, Shatrudhan Facoltàdi Ingegneria Università Telematica Pegaso Rome 00186 Italy MIS-LISTD Laboratory Computer Science Department Mines-Rabat School (ENSMR) Rabat 10000 Morocco Department of Chemical Materials and Industrial Production Engineering University of Naples “Federico II” Naples Italy Department of Electrical and Photonics Engineering Technical University of Denmark Kgs. Lyngby 2800 Denmark Marwadi University Research Center Faculty of Management Studies Marwadi University Gujarat Rajkot 360003 India

As society becomes more aware of environmental and social issues, supply chain stakeholders increasingly consider these factors alongside efficiency, cost, and time. The logistics industry must adapt by integrating Industry 4.0 technologies and sustainability practices. Sustainable Logistics 4.0, though nascent, is gaining traction for enhancing sustainability through digital interventions. This study conducted a comprehensive literature review and bibliometric network analysis using data extracted from the Scopus and Google Scholar databases, covering the period from 2013 to 2023, focusing on the integration of sustainability, Industry 4.0, and logistics. Noting a gap in conceptual frameworks, the paper performs a SWOT analysis to identify key factors and proposes a framework for digitalizing sustainable logistics and addressing emerging challenges. © The Author(s), under exclusive licence to Springer Nature Switzerland AG 2025.

关键词： Circular Economy Industry 4.0 Logistics Sustainability TBL

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electrically erasable multi-level charge trapping memory with metal nanoparticle engineering for organic synaptic transistors

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Journal of materials Chemistry C 2025年

作者： Hwang, Yujeong Lee, Yeon-Woo Kim, Chang-Hyun Park, Hea-Lim Kim, Min-Hoi Department of Creative Convergence Engineering Hanbat National University Daejeon34158 Korea Republic of Department of Materials Science and Engineering Seoul National University of Science and Technology Seoul01811 Korea Republic of School of Electrical Engineering and Computer Science University of Ottawa OttawaONKIN 6N5 Canada

The development of wearable neuromorphic electronics is critical for advancing human-machine interfaces, personalized healthcare, and brain-inspired computing. Organic synaptic transistors (OSTs) have emerged as promising candidates due to their biocompatibility, mechanical flexibility, and tunable optoelectronic properties by molecular design. However, achieving efficient electrical erasing in charge-trapping-based OSTs remains challenging, particularly for oligomeric semiconductors with relatively large bandgaps. Here, we introduce a novel approach to enhance the vertical electric field in OSTs by incorporating metal nanoparticles (NPs) on top of a wide-bandgap organic semiconductor, significantly improving erase operations. The proposed device demonstrates an enlarged memory window and successful realization of 30 distinct potentiation and depression states, overcoming the write-once-read-many limitation observed in conventional charge-trapping devices. Furthermore, neural network simulations employing our multi-level memory states achieved an 87.3% classification accuracy on hand-written digit dataset, comparable to software-based systems. This work provides a simple yet efficient strategy for engineering neuromorphic transistors, paving the way for next-generation artificial intelligence hardware. © 2025 The Royal Society of Chemistry.

关键词： Organic field effect transistors

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In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]

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Optical materials Express 2025年第6期15卷 1371-1381页

作者： Joshua Grant Sudip Acharya Alexer Golden Enbo Yang Hryhorii Stanchu Guo-En Chang Greg Sun Wei Du Shui-Qing Yu Department of Electrical Engineering and Computer Science University of Arkansas Fayetteville AR 72701 USA Material Science and Engineering Program University of Arkansas Fayetteville AR 72701 USA Institute for Nanoscience and Engineering University of Arkansas Fayetteville AR 72701 USA Department of Mechanical Engineering National Chung Cheng University Chiayi 62102 Taiwan Department of Engineering University of Massachusetts Boston MA 02125 USA

GeSn alloys hold great promise for the development of Si photonics due to its direct bandgap with sufficient high Sn composition, tunable bandgap energies covering broad infrared wavelength range, and compatibility with the complementary metal-oxide-semiconductor (CMOS) process. For the past decades, tremendous efforts have been made to develop material growth recipes to obtain device-level material quality using chemical vapor deposition (CVD) reactors. A common issue in material growth is the formation of Sn droplets (i.e., Sn segregation) that seriously degrades the material quality. However, although industrial CVD has delivered high-quality materials for device demonstration, the dynamic process of material growth remains unavailable, and only ex-situ material characterizations could provide feedback. In this work, a specially designed ultra-high-vacuum CVD (UHV-CVD) was used to study the growth dynamic by employing an in-situ optical system, which enables us to monitor the formation of Sn droplets in real-time. The Sn segregation occurring at the cooling stage after growth completion rather than during material growth was discovered, indicating that a post-growth treatment is needed to minimize the Sn droplet formation. By extending the GeSn growth time and controlling the cooling cycle, the number of Sn droplets dramatically reduced, leading to a high-quality strain-relaxed GeSn layer with 10.2% Sn composition and over 730 nm thickness. Material quality is comparable with those grown using commercial RPCVD in the early stage, which was further confirmed by the demonstration of an optically pumped laser. A threshold of ∼600 kW/cm 2 at 77 K and a maximum operating temperature of 100 K were obtained, with the lasing peak at ∼2250 nm.

关键词： Avalanche photodiodes Fourier transform infrared spectroscopy Laser sources materials processing Physical vapor deposition Thin films

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Strong long-wave infrared optical response in a topological semiconductor with a Mexican-hat band structure

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Physical Review B 2025年第8期111卷 085101-085101页

作者： Mark J. Polking Haowei Xu Raman Sankar Kevin Grossklaus Ju Li Advanced Materials and Microsystems Group Massachusetts Institute of Technology Lincoln Laboratory Lexington Massachusetts 02421 USA Department of Nuclear Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA Institute of Physics Academia Sinica Taipei 11529 Taiwan Department of Electrical and Computer Engineering Tufts University Medford Massachusetts 02155 USA Department of Materials Science and Engineering Massachusetts Institute of Technology Cambridge Massachusetts 02139 USA

Light sources and photodetectors operating in the far- to midinfrared (FIR/MIR) band (8–12 µm, 0.15–0.1 eV) remain relatively poorly developed compared to their counterparts operating in the visible and near-infrared ranges, despite extensive application potential for thermal imaging, standoff sensing, and other technologies. This is attributable in part to the lack of narrow-gap materials (<0.1 eV) with high optical gain and absorption. In this work, a narrow-gap semiconductor, Pb0.7Sn0.3Se, is demonstrated to exhibit an optical response >10× larger than that of HgxCd1−xTe (MCT), the dominant material for FIR/MIR photodetectors. A previous theoretical investigation indicated that chalcogen p and metal d band inversion in this material creates a Mexican hat band structure (MHBS), which results in a dramatic increase in the joint density of states at the optical transition edge compared to typical semiconductors. This prediction is experimentally validated here using single-crystal specimens of Pb0.7Sn0.3Se measured using temperature-dependent spectroscopic ellipsometry over a wavelength range 1.7–20 µm (0.73–0.062 eV). These measurements demonstrate a large enhancement in extinction coefficient and refractive index, which are characteristic of a MHBS in the vicinity of the absorption edge, in agreement with theoretical predictions. The realization of topological semiconductors with a MHBS is expected to lead to high-efficiency detectors operating in the FIR/MIR range.

关键词： Spectroscopic ellipsometry

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Periodic phase diagrams in micromagnetics with an eigenvalue solver

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IEEE Transactions on Magnetics 2025年

作者： Ai, Fangzhou Lin, Zhuonan Duan, Jiawei Lomakin, Vitaliy University of California Department of Electrical and Computer Engineering San DiegoCA92093 United States University of California Center for Memory and Recording Research San DiegoCA92093 United States University of California Program in Materials Science and Engineering San Diego92093 United States

This work introduces an approach to compute periodic phase diagram of micromagnetic systems by solving a periodic linearized Landau-Lifshitz-Gilbert (LLG) equation using an eigenvalue solver with the Finite Element Method formalism. The linear operator in the eigenvalue problem is defined as a function of the periodic phase-shift wave vector. The dispersion diagrams are obtained by solving the eigenvalue problem for complex eigenfrequencies and corresponding eigenstates for a range of prescribed wave vectors. The presented approach incorporates a calculation of the periodic effective field, including the exchange and magnetostatic field components. The approach is general in that it allows 3D problems to be handled with any 1D, 2D, and 3D periodicities. The ability to calculate periodic diagrams provides insights into the spin wave propagation and localized resonances in complex micromagnetic structures. © 1965-2012 IEEE.

关键词： Spin waves

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Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps

Understanding Correlation Between Memory Window Closure, Lea...

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Annual International Symposium on Reliability Physics

作者： Priyankka Ravikumar Andrea Padovani Prasanna Venkatesan Chinsung Park Nashrah Afroze Mengkun Tian Suman Datta Shimeng Yu Luca Larcher Gaurav Thareja Asif Khan School of Electrical and Computer Engineering Georgia Institute of Technology GA USA Engineering Department “Enzo Ferrari” UNIMORE Italy Institute of Materials GA USA School of Material Science and Engineering Georgia Institute of Technology GA USA Applied Materials

ISBN: (数字)9798331504779

ISBN: (纸本)9798331504786

Memory window (MW) closure, read delay, and gate leakage are three key reliability challenges in ferroelectric (FE) field-effect transistors (FEFETs), all of which have traditionally been analyzed separately. In this work, we exploit dedicated experiments and device simulations to present a detailed study of these three mechanisms in Si-FEFETs with a 10nm layer of FE HZO. The results reveal critical insights into the interplay between trap generation and polarization switching (PS), and the correlation between MW closure, read delay, and leakage current. First, we show that trap generation is accelerated by PS and initially (up to $5\times 10^{4}$ cycles) occurs mainly in the interfacial layer (IL). These PS induced traps are slow traps and are found to be responsible for both reduction in MW recovery with read delay and MW closure, demonstrating a strong correlation between the two mechanisms. Finally, we show that leakage current increase is controlled by the generation of HZO traps, which is triggered by internal field redistribution once IL is highly degraded (after MW closure). The engineering of FEFETs to minimize the formation of slow (de)trapping defects in the IL is essential to improve overall reliability of the FEFET device.

关键词： Degradation Electron traps Correlation Switches Reliability engineering Iron Delays Gate leakage FeFETs Stress

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Zero-shot Autonomous Microscopy for Scalable and Intelligent Characterization of 2D materials

arXiv

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arXiv 2025年

作者： Yang, Jingyun Yin, Ruoyan Avery Jiang, Chi Hu, Yuepeng Zhu, Xiaokai Hu, Xingjian Kumar, Sutharsika Wang, Xiao Zhai, Xiaohua Rong, Keran Zhu, Yunyue Zhang, Tianyi Yin, Zongyou Kong, Jing Gong, Neil Zhenqiang Ren, Zhichu Wang, Haozhe Department of Electrical and Computer Engineering Duke University United States School of Computing National University of Singapore Singapore Google Deepmind United Kingdom Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology United States School of Chemistry Australian National University Australia Department of Materials Science and Engineering Massachusetts Institute of Technology United States

Characterization of atomic-scale materials traditionally requires human experts with months to years of specialized training. Even for trained human operators, accurate and reliable characterization remains challenging when examining newly discovered materials such as two-dimensional (2D) structures. This bottleneck drives demand for fully autonomous experimentation systems capable of comprehending research objectives without requiring large training datasets. In this work, we present ATOMIC (Autonomous Technology for Optical Microscopy & Intelligent Characterization), an end-to-end framework that integrates foundation models to enable fully autonomous, zero-shot characterization of 2D materials. Our system integrates the vision foundation model (i.e., Segment Anything Model), large language models (i.e., ChatGPT), unsupervised clustering, and topological analysis to automate microscope control, sample scanning, image segmentation, and intelligent analysis through prompt engineering, eliminating the need for additional training. When analyzing typical MoS2 samples, our approach achieves 99.7% segmentation accuracy for single layer identification, which is equivalent to that of human experts. In addition, the integrated model is able to detect grain boundary slits that are challenging to identify with human eyes. Furthermore, the system retains robust accuracy despite variable conditions including defocus, color temperature fluctuations, and exposure variations. It is applicable to a broad spectrum of common 2D materials—including graphene, MoS2, WSe2, SnSe—regardless of whether they were fabricated via top-down or bottom-up methods. This work represents the implementation of foundation models to achieve autonomous analysis, establishing a scalable and data-efficient characterization paradigm that fundamentally transforms the approach to nanoscale materials research. © 2025, CC BY.

关键词： Layered semiconductors

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