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Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT under Bias and Temperature Stress

IEEE Journal of the Electron Devices Society 2024年 12卷 464-471页

作者： Aslam, Muhammad Chang, Shu-Wei Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Lee, Wen-Hsi Parallel and Scientific Computing Laboratory National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan City701401 Taiwan Institute of Pioneer Semiconductor Innovation Industry Academic Innovation School National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu300093 Taiwan

Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. Given the demand for CMOS-compatible, ultra-scaled, reliable, and high-performing devices, we fabricate and analyze scaled-channel a-IGZO-TFTs with an optimal double-gate structure, a thin nanosheet-based channel, and an effective high- κ dielectric namely HfO2. The reliably reported double gate IGZO nanosheet TFTs (DG-IGZO-NS-TFTs) are tested under positive and negative bias stress at variant temperatures, and the resulting modulations are analyzed critically. The reported DG-IGZO-NSTFTs exhibit a negative side threshold voltage shift (Δ Vth) accompanied by an increase in Ion/Ion(0) under negative bias temperature stress (NBTS) at elevated temperatures, which indicates the presence of additional charges. An anomalous negative side shifting of the Vth is observed under positive bias temperature stress (PBTS), where diffused hydrogen atoms are identified as introducing excess n-type carriers into the channel and causing the observed Δ Vth. The spectroscopic analysis is performed to establish evidence for the assumed mechanisms, and the role of individual gates is investigated in the context of performance variance under temperature-bias stress. Moreover, the partial reversibility of the stress-induced degradation is experimentally established and methodically discussed. Overall, the reported results offer a comprehensive understanding of scaled-channel DG-NS-IGZO-TFTs, which help shape performance-enhancement strategies, control degradation mechanisms, and define appropriate application scenarios. © 2013 IEEE.

关键词： Thin film transistors

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Soft,full Wheatstone bridge 3D pressure sensors for cardiovascular monitoring

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npj Flexible Electronics 2024年第1期8卷 910-917页

作者： Yoonseok Park Haiwen Luan Kyeongha Kwon Ted S.Chung Seyong Oh Jae-Young Yoo Gooyoon Chung Junha Kim Suhyeon Kim Sung Soo Kwak Junhwan Choi Hoang-Phuong Phan Seonggwang Yoo Hyoyoung Jeong Jaeho Shin Sang Min Won Hong-Joon Yoon Yei Hwan Jung John A.Rogers Department of Advanced Materials Engineering for Information and Electronics Integrated Education Institute for Frontier Science&Technology(BK21 Four)Kyung Hee UniversityYongin-siGyeonggi-do 17104Republic of Korea Department of Mechanical and Aerospace Engineering University of California San DiegoLa JollaCA 92093USA School of Electrical Engineering Korea Advanced Institute of Science and TechnologyDaejeonRepublic of Korea Department of Mechanical Engineering Columbia UniversityNew YorkNYUSA Division of Electrical Engineering Hanyang University ERICAAnsan 15588Republic of Korea Department of Semiconductor Convergence Engineering Sungkyunkwan UniversitySuwonRepublic of Korea Biomedical Research Division Korea Institute of Science and TechnologySeoul 02792Republic of Korea Department of Chemical Engineering Dankook UniversityYonginGyeonggi-do 16890Republic of Korea School of Mechanical and Manufacturing Engineering Tyree Institute of Health EngineeringUniversity of New South WalesSydneyNSW 2052Australia Querrey Simpson Institute for Bioelectronics Northwestern University EvanstonEvanstonIL 60208USA Department of Electrical and Computer Engineering University of California DavisDavisCA 95616USA Department of Electrical and Computer Engineering Sungkyunkwan University2066Seobu-roJangan-guSuwon-siGyeonggi-do 16419Republic of Korea Department of Electronic Engineering Gachon UniversitySeongnamsiGyeonggi-do 13120Republic of Korea Department of Electronic Engineering Hanyang UniversitySeoulRepublic of Korea Department of Materials Science and Engineering Biomedical EngineeringNeurological SurgeryChemistryMechanical EngineeringElectrical Engineering and Computer Science Simpson Querrey Institute and Feinberg Medical SchoolCenter for Bio-Integrated ElectronicsNorthwestern University EvanstonEvanstonIL 60208USA

Variations in parameters associated with the ambient environment can introduce noise in soft,body-worn *** example,many piezoresistive pressure sensors exhibit a high degree of sensitivity to fluctuations in temperature,thereby requiring active compensation *** research presented here addresses this challenge with a multilayered 3D microsystem design that integrates four piezoresistive sensors in a full-Wheatstone bridge *** optimized layout of the sensors relative to the neutral mechanical plane leads to both an insensitivity to temperature and an increased sensitivity to pressure,relative to previously reported devices that rely on similar operating *** this 3D pressure sensor into a soft,flexible electronics platform yields a system capable of real-time,wireless measurements from the surface of the *** above the radial and carotid arteries yields high-quality waveforms associated with pulsatile blood flow,with quantitative correlations to blood *** results establish the materials and engineering aspects of a technology with broad potential in remote health monitoring.

关键词： Wheat bridge thereby

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A Novel Approach to Reduce A Visual Gap Using Inpainting GAN

A Novel Approach to Reduce A Visual Gap Using Inpainting GAN

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IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia)

作者： Thanh Hien Truong Tae-Ho Lee Viduranga Munasinghe Tae-Sung Kim Jin-Sung Kim Hyuk-Jae Lee Electrical and Computer Engineering Seoul National University Next-Generation Semiconductor Convergence and Open Sharing System Seoul National University Department of Electronic Engineering Sun Moon University

Image blending represents a technique employed in image composition, aimed at creating a composite image that appears as natural and realistic as possible. The objective of image blending is to ensure that the transitions between objects in the image appear seamless and without any color distortion. Recently, numerous studies investigated image blending methods adopting deep learning-based image processing algorithms and contributed to generating natural blended images. Although the previous studies show remarkable performance in many cases, they suffer from quality drop when blending incompletely cropped object. This paper introduces a novel approach that effectively reduces the unnatural edges and the color distortion in such cases. In this study, an algorithm which called edge checking (EC) is proposed to identify and manage incompletely cropped regions. To address missing or masked parts of the object image and integrate them into the image blending process, an inpainting generative adversarial model are employed.

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Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

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MRS Online Proceedings Library 2003年第1期744卷 1-6页

作者： Workman, Clayton L. Wang, Zhiming Ma, Wenquan George, Christi E. Panneer Selvam, R. Salamo, Gregory J. Zhou, Qiaoying Omar Manasreh, M. Center for Semiconductor Physics in Nanostructures (C-SPIN) and the Microelectronics-Photonics Program University of Arkansas Fayetteville USA Department of Electrical and Computer Engineering University of New Mexico Albuquerque USA

We report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown InxGa1-xAs/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded InxGa1-xAs buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in InxGa1-xAs wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

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Effect of In-Situ Zn Doping on Suppression of Phase Separation in in X Al1− X as Epitaxial Layer on Inp(001) Grown by Mocvd

SSRN

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SSRN 2023年

作者： Jang, Hyunchul Lee, Sang Tae Song, Chang-Hun Kong, Minwoo Shim, Jae-Phil Shin, Seung Heon Song, Keun Man Choi, Yong-Su Kim, Donghyun Park, Kyong-Ho Shin, Chan-Soo Korea Republic of Department of Material Science and Engineering Yonsei University Korea Republic of Department of Electrical and Computer Engineering Inter-university Semiconductor Research Center Seoul National University Korea Republic of Department of Semiconductor Process Equipment Semiconductor Convergence Campus Korea Polytechnics Korea Republic of

The effect of Zn impurities on the surface morphology evolution and phase separation behavior of the InAlAs layer on InP(001) substrates is investigated using metal organic chemical vapor deposition (MOCVD). The phase... 详细信息

关键词： Surface morphology

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE Open Journal of Nanotechnology

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IEEE Open Journal of Nanotechnology 2023年 4卷 150-155页

作者： Chen, Yi-Ho Ohori, Daisuke Aslam, Muhammad Lee, Yao-Jen Li, Yiming Samukawa, Seiji National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Graduate Degree Program of College of Electrical and Computer Engineering Hsinchu300093 Taiwan Tohoku University Institute of Fluid Science Sendai980-8577 Japan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Pioneer Semiconductor Innovation Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Parallel and Scientific Computing Laboratory Institute of Communications Engineering Institute of Biomedical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Department of Electronics and Electrical Engineering Hsinchu300093 Taiwan National Yang Ming Chiao Tung University Institute of Communications Engineering Hsinchu300093 Taiwan

This study investigated the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) with varied recess depths under the gate electrode. We demonstrated a recess depth of approximately 6 nm, which was achieved through neutral beam etching (NBE) technique with a low etch rate of 1.8 nm/min, resulting in device enhancement-mode (E-mode) behavior with threshold voltage (Vth) of 0.49 V. The effects of post-metallization annealing (PMA) on the device performance were also examined. The results revealed that PMA treatment improves the DC characteristics of the devices, including maximum drain current (IDMAX), transconductance (gm), subthreshold swing (SS), on-off ratio, and off-state leakage current, with maximum enhancement percentage of 18.3% for IDMAX, 3758% for on-off ratio, and 54.3% for SS. Moreover, this study compared the recess depths of metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with the SiN dielectric layer. The results showed that MIS-HEMTs exhibit more negative Vth values, which can be attributed to the controlled surface states achieved through passivation. © 2020 IEEE.

关键词： Etching

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Modeling GaN: Powerful but challenging

Modeling GaN: Powerful but challenging

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作者： Dunleavy, Lawrence Baylis, Charles Curtice, Walter Connick, Rick Modelithics Inc. Tampa FL United States Department of Electrical Engineering Center for Wireless and Microwave Information Systems University of South Florida Tampa United States Department of Electrical and Computer Engineering Wireless and Microwave Circuits and Systems Program Baylor University Waco TX United States W.R. Curtice Consulting Washington Crossing PA United States Triquint Semiconductor Apopka FL United States

Gallium nitride transistor-based power amplifiers (PA) which are currently among the most important technologies impacting high-power transmitter design at microwave frequencies are discussed. GaN HEMTs also allow high-power operation at much higher frequencies than silicon laterally diffused metal oxide semiconductor field-effect transistors (LDMOS FETs), currently a staple for the cellular base station industry. The significant attention placed on nonlinear models is in step with the growing community of designers who are using nonlinear circuit simulators with good success to design and optimize high-power amplifiers. The use of pulsed measurements as part of the modeling process, along with sufficiently flexible modeling equations and topologies, is critical for obtaining reliable electrothermal GaN models. The successful modeler will be aware of the need for accurate data, carefully applied extraction methodologies, along with the strengths and limitations of available models to obtain the best results for circuit designers.

关键词： Gallium nitride

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AlN and AlGaN layers grown on Si(111) substrate by mixed-source hydride vapor phase epitaxy method

AlN and AlGaN layers grown on Si(111) substrate by mixed-sou...

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作者： Jeon, Hunsoo Jeon, Injun Lee, Gang Seok Bae, Sung Geun Ahn, Hyung Soo Yang, Min Yi, Sam Nyung Yu, Young Moon Honda, Yoshio Sawaki, Nobuhiko Kim, Suck-Whan Department of Electronic Material Engineering Korea Maritime and Ocean University Busan49112 Korea Republic of Compound Semiconductor Fabrication Technology Center Korea Maritime and Ocean University Busan49112 Korea Republic of LED-Marine Convergence Technology RandBD Center Pukyong National University Busan48513 Korea Republic of Department of Electrical Engineering and Computer Science Nagoya University Nagoya464-8603 Japan Department of Electrical and Electronics Engineering Aichi Institute of Technology Toyota Aichi470-0392 Japan Department of Physics Andong National University Andong36729 Korea Republic of

High Al-composition AlGaN and AlN epilayers were grown directly on Si(111) substrate by a hydride vapor phase epitaxy (HVPE) method with a melted mixed source in a graphite boat set in a source zone with high temperatures of T = 700 and 800 °C, respectively. The presence of the Ga material in the mixed source of Ga and Al promoted the growth of AlN and AlGaN epilayers in the growth zone. When the temperature in the source zone was 800 °C, the crystalline quality of the AlN and AlGaN epilayers increased as the ratio of Ga to Al increased, and the optimum mix ratio of Ga to Al for the growth of AlN epilayers was approximately 0.35-0.42, obtained from a numerical fitting analysis of the X-ray diffraction (XRD) data for these epilayers. It appears that they can be grown directly by our melted-mixed-source HVPE method in a high-temperature source zone. © 2017 The Japan Society of Applied Physics.

关键词： Aluminum nitride

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Guest Editorial: Special Issue on Technology Trends in Control, Robotics and Systems - For the 30th Anniversary of the Institute of Control, Robotics and Systems -

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Journal of Institute of Control, Robotics and Systems 2024年第4期30卷 295-295页

作者： Ko, Nak Yong Kang, Taesam Song, Jin Woo Lim, Myo Taeg Jo, Kang-Hyun Department of Electronic Engineering Interdisciplinary Program in IT-Bio Convergence System Chosun University Korea Republic of Department of Mechanical and Aerospace Engineering Konkuk University Korea Republic of Department of Intelligent Mechatronics Engineering Sejong University Korea Republic of School of Electrical Engineering Korea University Korea Republic of Department of Electrical Electronic and Computer Engineering University of Ulsan Korea Republic of

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P-223:Late-News Poster:Alleviating Gamma Curve OLED Device with Inductor by AC Driving

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SID Symposium Digest of Technical Papers 2024年第1期55卷 1483-1485页

作者： Jincheol Jang Jae-In Yoo Vitaly P. Panov Hyo-Bin Kim Sung-Cheon Kang Eun-young Choi Jang-Kun Song Department of Semiconductor and Display Engineering Sungkyunkwan University Suwon Gyeonggi-do South Korea 16419 Department of Electrical and Computer Engineering Sungkyunkwan University Suwon Gyeonggi-do South Korea 16419 Department of Display Convergence Engineering Sungkyunkwan University Suwon Gyeonggi-do South Korea 16419

This study integrates an inductor into OLED structures to overcome challenges in low gray level expression. At the resonance frequency of 19 kHz, a linear correlation between voltage and emission intensity emerges, re... 详细信息

关键词： OLED AC Inductor

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