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SSRN 2022年

作者： Kim, Do-Kywn Park, Saungeun Shim, Jae-Phil Shin, Seung Heon Department of Semiconductor Materials and Applications Seongnam Campus Korea Polytechnics Seongnam-si13122 Korea Republic of Department of Electrical and Computer Engineering The University of Texas AustinTX78758 United States Suwon-si16229 Korea Republic of Department of Semiconductor Process Equipment Semiconductor Convergence Campus Korea Polytechnics 41-12 Songwon-gil Gongdo-eup Anseong-si17550 Korea Republic of

In this paper, long-channel flexible In0.7Ga0.3As Metal-Oxide-semiconductor Field-Effect-Transistors (MOSFETs) have been fabricated and characterized utilizing liquid polyimide (LPI) transfer. The fabricated In0.7Ga0.3As flexible MOSFETs with Lg = 4 µm shows excellent DC and electrostatic integrity such as threshold voltage (VT) of -0.12 V, maximum transconductance (gm,max) of 265 µS/µm, subthreshold swing (SS) of 112 mV/dec, and drain-induced barrier lowering (DIBL) of 91 mV/V at VDS = 0.5 V, respectively. In addition, we have characterized gate length scaling behavior and our devices show uniform performances of VT = -0.11 to -0.15 V and SS = 108 to 118 mV/decade with various gate lengths ranging from 4 µm to 9 µm. Moreover, the device exhibits excellent effective mobility (μn_eff) = 3,667 cm2/V-s at room temperature. These excellent characteristics of the flexible In0.7Ga0.3As MOSFETs are attributed to optimized process technology for the flexible In0.7Ga0.3As MOSFETs using liquid polyimide (LPI) as well as optimized high-κ dielectrics of Al2O3/HfO2 (0.6/2 nm) for the gate dielectrics. © 2022, The Authors. All rights reserved.

关键词： Liquids

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Development of a Continuous Complex Event Processing Platform for Real-Time Tactical Moving Objects

Development of a Continuous Complex Event Processing Platfor...

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IEEE International Conference on Big Data

作者： Jiwan Lee Bonghee Hong Chumsoo Kim Woo Chan Kim BK21PLUS Creative Human Resource Development Program for IT Convergence Pusan National University Busan South Korea Department of Electrical and Computer Engineering Pusan National University Busan South Korea Agency for Defense Development South Korea

ISBN: (数字)9781728108582

ISBN: (纸本)9781728108599

This paper designs a rule-based complex event processing platform that processes rules for processing sensor data streams differently depending on the front, back, and sides of the naval vessel. The complex event processing platform supports event filtering rules, event capturing rules, continuous queries rules, and complex event processing rules. To support the high-performance rule-based complex event processing, our platform implements continuous query indexing, CEP index, and Rete algorithm.

关键词： Data processing Query processing Real-time systems Knowledge based systems Graphical user interfaces Information filtering

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Wireless,multimodal sensors for continuous measurement of pressure,temperature,and hydration of patients in wheelchair

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npj Flexible Electronics 2023年第1期7卷 479-493页

作者： Seokjoo Cho Hyeonseok Han Hyunwoo Park Sung-Uk Lee Jae-Hwan Kim Sung Woo Jeon Mengqiu Wang Raudel Avila Zhaoqian Xi Kabseok Ko Minsu Park Jungyup Lee Myungwoo Choi Je-Sang Lee Weon Gi Min Byeong-Ju Lee Soyeong Lee Jungrak Choi Jimin Gu Jaeho Park Min Seong Kim Junseong Ahn Osman Gul Chankyu Han Gihun Lee Seunghwan Kim Kyuyoung Kim Jeonghyun Kim Chang-Mo Kang Jahyun Koo Sung Soo Kwak Sungbong Kim Dong Yun Choi Seokwoo Jeon Hyung Jin Sung Yong Bae Park Minkyu Je Young Tae Cho Yong Suk Oh Inkyu Park Department of Mechanical Engineering Korea Advanced Institute of Science and TechnologyDaejeon 34141Republic of Korea School of Electrical Engineering Korea Advanced Institute of Science and TechnologyDaejeon 34141Republic of Korea Advanced 3D Printing Technology Development Division Korea Atomic Energy Research InstituteDaejeon 34057Republic of Korea Department of Electrical and Computer Engineering University of Illinois at Urbana-ChampaignUrbanaIL 61801USA State Key Laboratory of Structural Analysis for Industrial Equipment Department of Engineering MechanicsDalian University of TechnologyDalian 116023P.R.China Department of Mechanical Engineering Northwestern UniversityEvanstonIL 60208USA DUT-BSU Joint Institute Dalian University of TechnologyDalian 116023China Ningbo Institute of Dalian University of Technology Ningbo 315016China Department of Electronics Engineering Kangwon National UniversityChuncheon 24341Republic of Korea Querrey-Simpson Institute for Bioelectronics Northwestern UniversityEvanstonIL 60208USA Sibel Health Inc NilesIL 60714USA Department of Materials Science and Engineering KAIST Institute for The Nanocentury(KINC)Korea Advanced Institute of Science and TechnologyDaejeon 34141Republic of Korea Department of Rehabilitation Medicine Gimhae Hansol Rehabilitation&Convalescent HospitalGimhae 50924Republic of Korea Department of planning and development Gimhae Hansol Rehabilitation&Convalescent HospitalGimhae 50924Republic of Korea Department of rehabilitation medicine Pusan national university hospitalBusan 49241Republic of Korea Department of AI Convergence Network Ajou UniversitySuwon 16499Republic of Korea Department of Electronic Convergence Engineering Kwangwoon UniversitySeoul 01897Republic of Korea Korea Photonics Technology Institute Gwangju 61007Republic of Korea School of Biomedical Engineering Korea UniversitySeoul 02841Republic of Korea Interdisciplinary Program in Precision Public Health Korea UniversitySeoul 02841Republic of Korea Center

Individuals who are unable to walk independently spend most of the day in a *** population is at high risk for developing pressure injuries caused by ***,early diagnosis and prevention of these injuries still remain ***,we introduce battery-free,wireless,multimodal sensors and a movable system for continuous measurement of pressure,temperature,and hydration at skin *** device design includes a crack-activated pressure sensor with nanoscale encapsulations for enhanced sensitivity,a temperature sensor for measuring skin temperature,and a galvanic skin response sensor for measuring skin hydration *** movable system enables power harvesting,and data communication to multiple wireless devices mounted at skin-cushion interfaces of wheelchair users over full body *** evaluations and numerical simulations of the devices,together with clinical trials for wheelchair patients,demonstrate the feasibility and stability of the sensor system for preventing pressure injuries caused by sitting.

关键词： injuries modal mounted

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Multi-bit functional NOR type SONOS memories

Multi-bit functional NOR type SONOS memories

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Device Research Conference

作者： Moonkyung Kim Chung Woo Kim Jo-won Lee S. Tiwari Department of Electrical and Computer Engineering Cornell University Ithaca NY USA Semiconductor R&D Center Memory BusinessSamsung Electronics Co. Ltd. Korea National Program for Tera-level Nano Devices Korea

We show that nearly 90 electrons can be stored at 30 nm dimensions of memory nodes, sufficient for reproducibility with having multi-bit memory windows, and that a minimum of tunneling oxide thickness is required to assure reliable retention characteristics. This work has achieved ultra-low number of electron storage while achieving high threshold shifts and demonstrates predictability through self-consistent modeling of programming and erasure characteristics.

关键词： SONOS devices Voltage MONOS devices Nonvolatile memory Carrier confinement Hafnium oxide High K dielectric materials High-K gate dielectrics Network address translation Temperature

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Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices Induced by Random Interface Traps

Characteristics Fluctuation of Sub-3-nm Bulk FinFET Devices ...

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IEEE Conference on Nanotechnology

作者： Sekhar Reddy Kola Min-Hui Chuang Yiming Li Parallel and Scientific Computing Laboratory Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu Taiwan Department of Electronics and Electrical Engineering Institute of Communications Engineering Institute of Biomedical Engineering Institute of Pioneer Semiconductor Innovation Institute of Artificial Intelligence Innovation National Yang Ming Chiao Tung University Hsinchu Taiwan

Three-dimensional (3D) bulk fin-typed field effect transistors (FinFETs) have emerged as key devices that can scale down the technology node beyond 22-nm. However, the scaled devices have created new sources of fluctuation inherent in 3D geometry. The interface trap is one such fluctuation that is caused by the trapping and de-trapping of charge carriers and has an adverse effect on device characteristics and variability. In this work, we study impacts of random interface traps (RITs) on electrical characteristic of bulk FinFETs by using a 3D quantum-mechanically corrected device simulation. RIT position effects on short channel effects (SCEs) are examined with physical governed influence to show the major fluctuations. More than 50% reductions of the RITs-induced characteristic fluctuation of the germanium (Ge) devices are observed, compared with Si devices. The Ge ones can reduce SCE variations and exhibit high immunity to RITs.

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Reports of the AAAI 2011 conference workshops

Reports of the AAAI 2011 conference workshops

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作者： Agmon, Noa Agrawal, Vikas Aha, David W. Aloimonos, Yiannis Buckley, Donagh Doshi, Prashant Geib, Christopher Grasso, Floriana Green, Nancy Johnston, Benjamin Kaliski, Burt Kiekintveld, Christopher Law, Edith Lieberman, Henry Mengshoel, Ole J. Metzler, Ted Modayil, Joseph Oard, Douglas W. Onder, Nilufer O'Sullivan, Barry Pastra, Katerina Precup, Doina Ramachandran, Sowmya Reed, Chris Sariel-Talay, Sanem Selker, Ted Shastri, Lokendra Singh, Satinder Smith, Stephen F. Srivastava, Siddharth Sukthankar, Gita Uthus, David C. Williams, Mary-Anne Department of Computer Science University of Texas at Austin United States Center for Knowledge Driven Information Systems Infosys Labs India Adaptive Systems Section Naval Research Laboratory Washington DC United States Department of Computer Science University of Maryland College Park United States EMC's Center of Excellence in Ireland Research Europe at EMC Ireland Department of Computer Science University of Georgia United States School of Informatics University of Edinburgh United Kingdom Department of Computer Science University of Liverpool United Kingdom Department of Computer Science University of North Carolina Greensboro United States Faculty of Engineering and Information Technology University of Technology Sydney Australia VeriSign Inc. United States Department of Computer Science University of Texas at El Paso United States Machine Learning Department Carnegie Mellon University United States Massachusetts Institute of Technology Media Laboratory United States Carnegie Mellon University's Silicon Valley Campus United States Darrell W. Hughes Program for Religion and Science Dialogue Oklahoma City University United States Department of Computing Science University of Alberta Canada College of Information Studies Institute for Advanced Computer Studies University of Maryland College Park United States Department of Computer Science Michigan Technological University United States Department of Computer Science University College Cork Ireland Cognitive Systems Research Insitute Athens Greece School of Computer Science McGill University Canada Stottler Henke Inc. United States School of Computing University of Dundee United Kingdom Department of Computer Engineering Istanbul Technical University Turkey Convergence Lab Infosys Technologies Ltd. United States Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor United States Robotics Institute Carnegie Mellon University United States University of Wisconsin

The AAAI-11 workshop program was held Sunday and Monday, August 7-18, 2011, at the Hyatt Regency San Francisco in San Francisco, California USA. The AAAI-11 workshop program included 15 workshops covering a wide range of topics in artificial intelligence. The titles of the workshops were Activity Context Representation: Techniques and Languages;Analyzing Microtext;Applied Adversarial Reasoning and Risk Modeling;Artificial Intelligence and Smarter Living: The Conquest of Complexity;Artifiicial Intelligence for Data Center Management and Cloud Computing;Automated Action Planning for Autonomous Mobile Robots;Computational Models of Natural Argument;Generalized Planning;Human Computation;Human-Robot Interaction in Elder Care;Interactive Decision Theory and Game Theory, 2010;Language-Action Tools for Cognitive Artificial Agents: Integrating Vision, Action, and Language;Lifelong Learning from Sensorimotor Experience;Plan, Activity, and Intent Recognition;and Scalable Integration of Analytics and Visualization. This article presents short summaries of those events. Copyright © 2012, Association for the Advancement of Artificial Intelligence. All rights reserved.

关键词： Human robot interaction

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Coherent growth and characterization of van der Waals 1T−VSe2 layers on GaAs(111)B using molecular beam epitaxy

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Physical Review Materials 2020年第8期4卷 084002-084002页

作者： Tiancong Zhu Dante J. O’Hara Brenton A. Noesges Menglin Zhu Jacob J. Repicky Mark R. Brenner Leonard J. Brillson Jinwoo Hwang Jay A. Gupta Roland K. Kawakami Department of Physics The Ohio State University Columbus Ohio 43210 USA Program in Materials Science and Engineering University of California Riverside California 92521 USA Materials Science Division Lawrence Livermore National Laboratory Livermore California 94550 USA Department of Materials Science and Engineering The Ohio State University Columbus Ohio 43210 USA Department of Electrical and Computer Engineering The Ohio State University Columbus Ohio 43210 USA Semiconductor and Epitaxy Analysis Laboratory The Ohio State University Columbus Ohio 43210 USA

We report epitaxial growth of vanadium diselenide (VSe2) thin films in the octahedrally coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy, and x-ray photoelectron spectroscopy indicate high-quality thin films. Further studies show that monolayer VSe2 films on GaAs are not air stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe2, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for two- and three-dimensional hybrid devices.

关键词： Chemical bonding Growth Ferromagnets III-V semiconductors Transition metal dichalcogenides Molecular beam epitaxy Reflection high-energy electron diffraction

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Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

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ECS Journal of Solid State Science and Technology 2024年第6期13卷 065008-065008页

作者： Aslam, Muhammad Chang, Shu-Wei Chen, Yi-Ho Lee, Yao-Jen Li, Yiming Lee, Wen-Hsi Electrical Engineering and Computer Science International Graduate Program National Yang Ming Chiao Tung University Hsinchu 300093 Taiwan Department of Electrical Engineering National Cheng Kung University Tainan 701401 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 300093 Taiwan Institute of Pioneer Semiconductor Innovation Industry Academic Innovation School National Yang Ming Chiao Tung University Hsinchu 300093 Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu 300093 Taiwan

Amorphous indium gallium zinc oxide (a-IGZO) has recently made significant advancement as a key material for electronic component design owing to its compatibility with complementary metal oxide semiconductor technologies. A comprehensive analysis of reliability-related issues is required to determine the true potential of a-IGZO-based devices for next-generation electronics applications. To address this objective, we electrically characterize scaled-channel a-IGZO thin film transistors (TFTs) under positive bias (temperature) stress (PB(T)S). Both PBS and PBTS are characterized by positive and negative V_th shift, respectively, during the various gate stresses. In particular, the negative V_th shift is explained by the generation of donor-like traps stimulated by ionization of oxygen vacancy/hydrogen at elevated temperature. The TFTs exhibit relatively decent stability during the PBS operation. The analysis of devices with variant channel dimensions implies that long-channel devices exhibit relatively higher stability and performance compared to the short-channel ones. We also observe that the V_th can be controllably adjusted by employing the top gate (TG) with bottom gate sweep. Moreover, the stress-induced partial recovery mechanism is experimentally observed owing to detrapping of charges. Generally, the reported results infer a perceptive understanding of scaled-channel a-IGZO-TFTs which helps with shaping performance-enhancement strategies. © 2024 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited

关键词： amorphous IGZO-TFT electrical instabilities hydrogen-impact scaling impact on reliability

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Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching

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Materials Today Advances 2024年 22卷

作者： Lo, Yu-Yun Chen, Yi-Ho Hsu, Yun-Cheng Lee, Tzu-Yi Hung, Yu-Ying Kao, Yu-Cheng Zan, Hsiao-Wen Wuu, Dong- Sing Kuo, Hao-Chung Samukawa, Seiji Horng, Ray-Hua Institute of Electronics National Yang Ming Chiao Tung University 1001 University Road Hsinchu30010 Taiwan Department of Photonics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Materials Science and Engineering National Chung Hsing University Taichung40227 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Semiconductor Research Center Hon Hai Research Institute Taipei11492 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan

The fabrication of InGaN-based blue 4✕4 array micro-LEDs (μLEDs) with 40 μm ✕40 μm chip size and 2✕2 array μLEDs with 80 μm ✕80 μm chip size etching by the inductive coupled plasma reactive ion etching (ICPRIE) and defect-free neutral beam etching (NBE) processes was studied in this work. In μLEDs of this size, the influence of defects formation in the sidewalls on EQE was evaluated. There was almost no difference in EQE between μLEDs array etched by the NBE process no matter 40 μm ✕40 μm and 80 μm ✕80 μm, but the dependence was observed in the ICPRIE. Even with this size, it was found that the size effect of EQE is smaller than that in case of using ICPRIE for defect-free neutral beam etching. This impact is substantial since μLED predominantly operated at low current density, around 1–5 A/cm2. Consequently, the reduction of defect density, encompassing both internal and sidewall defects, becomes imperative even in 40–80 μm InGaN-based μLEDs. This not only improves the overall efficiency of μLEDs but also fortifies the brightness stability of μLED displays if process etching by NBE. It was also found that the etching shape had an influence on EQE. It could be attributed to fact that the etching profile angle of NBE was more vertical than that of ICPRIE. Because the different angles of the mesa resulted in different light intensity. The μLEDs emitting with a wavelength of 450 nm, the light extraction efficiency and intensity at a mesa angle 58° of NBE etching μLEDs was about 8% lower than those of an angle (38°) of ICPRIE etching μLEDs by simulation. © The Authors

关键词： Light emitting diodes

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Collaborative cloud and edge mobile computing in C-RAN Systems with Minimal End-to-End Latency

arXiv

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arXiv 2021年

作者： Park, Seok-Hwan Jeong, Seongah Na, Jinyeop Simeone, Osvaldo Shamai, Shlomo Division of Electronic Engineering and Future Semiconductor Convergence Technology Research Center Jeonbuk National University Jeonju54896 Korea Republic of School of Electronics Engineering Kyungpook National University Daegu14566 Korea Republic of Daejeon34141 Korea Republic of Lab King's College London LondonWC2R 2LS United Kingdom Department of Electrical and Computer Engineering Technion Haifa 3200003 Israel

Mobile cloud and edge computing protocols make it possible to offer computationally heavy applications to mobile devices via computational offloading from devices to nearby edge servers or more powerful, but remote, cloud servers. Previous work assumed that computational tasks can be fractionally offloaded at both cloud processor (CP) and at a local edge node (EN) within a conventional Distributed Radio Access Network (D-RAN) that relies on non-cooperative ENs equipped with oneway uplink fronthaul connection to the cloud. In this paper, we propose to integrate collaborative fractional computing across CP and ENs within a Cloud RAN (C-RAN) architecture with finitecapacity two-way fronthaul links. Accordingly, tasks offloaded by a mobile device can be partially carried out at an EN and the CP, with multiple ENs communicating with a common CP to exchange data and computational outcomes while allowing for centralized precoding and decoding. Unlike prior work, we investigate joint optimization of computing and communication resources, including wireless and fronthaul segments, to minimize the end-to-end latency by accounting for a two-way uplink and downlink transmission. The problem is tackled by using fractional programming (FP) and matrix FP. Extensive numerical results validate the performance gain of the proposed architecture as compared to the previously studied D-RAN solution. Copyright © 2021, The Authors. All rights reserved.

关键词： Matrix algebra

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