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IEEE International Symposium on Quality Electronic Design

作者： Sekhar Reddy Kola Yiming Li Min-Hui Chuang Parallel and Scientific Computing Laboratory Hsinchu Taiwan Electrical Engineering and Computer Science International Graduate Program Hsinchu Taiwan Institute of Communications Engineering Hsinchu Taiwan Institute of Biomedical Engineering Hsinchu Taiwan Institute of Pioneer Semiconductor Innovation Hsinchu Taiwan Institute of Artificial Intelligence Innovation Hsinchu Taiwan Department of Electronics and Electrical Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Center for mmWave Smart Radar System and Technologies National Yang Ming Chiao Tung University Hsinchu Taiwan

We study the variability of vertically stacked gate-all-around silicon nanosheet (GAA Si NS) complementary field-effect transistors (CFETs). The process variation effect (PVE), the work function fluctuation (WKF), and the random dopant fluctuation (RDF) of CFETs are statistically estimated using an experimentally validated device simulation technique. Among five factors of PVE, the channel thickness (T Nch /T Pch ), the channel width (W ch ), and the gate length (L G ) are significant. Owing to superior GAA channel control and increased effective gate area, both WKF and RDF are suppressed. Notably, the PVE on both N-/P-FETs of GAA Si CFET induce the largest off-state current fluctuations of 80% and 278%, respectively, because the device characteristic is very sensitive to the layer thickness and width of channel.

关键词： Fluctuations Gallium arsenide Logic gates Electric variables Silicon Resource description framework semiconductor process modeling

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Caco-2 Cell-Derived Biomimetic Electrochemical Biosensor for Cholera Toxin Detection

SSRN

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SSRN 2022年

作者： Kim, Yonghwan Lee, Dongtak Seo, Youngjun Jung, Hyo Gi Jang, Jae Won Park, Dongsung Kim, Insu Lee, Gyudo Hwang, Kyo Seon Kim, Seung-Hyun Lee, Sang Won Lee, Jeong Hoon Yoon, Dae Sung School of Biomedical Engineering Korea University Seoul02841 Korea Republic of Interdisciplinary Program in Precision Public Health Korea University Seoul02841 Korea Republic of Department of Clinical Pharmacology and Therapeutics College of Medicine Kyung Hee University Seoul02447 Korea Republic of Department of Biotechnology and Bioinformatics Korea University Sejong30019 Korea Republic of Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology Korea University Sejong30019 Korea Republic of School of Engineering Brown University ProvidenceRI02912 United States Department of Electrical Engineering and Computer Science University of California IrvineCA92697 United States Department of Electrical Engineering Kwangwoon University Seoul01897 Korea Republic of Astrion Inc Seoul02841 Korea Republic of

Cholera is a highly contagious and lethal waterborne disease induced by an infection with Vibrio cholerae (V. cholerae) secreting cholera toxin (CTx). Cholera toxin subunit B (CTxB) from the CTx specifically binds with monosialo-tetra-hexosyl-ganglioside (GM1) found on the exterior cell membrane of an enterocyte. Owing to the pathological process of CTx, a biomimetic electrochemical biosensor (CCB) was developed by applying GM1-expressing Caco-2 cell membrane (CCM) on the electrode surface of the biosensor for CTx detection. Briefly, the electrode surface was functionalized with CCM using the vesicle fusion method. The specific binding between GM1 and CTxB on the electrode surface was verified using confocal laser scanning microscopy and atomic force microscopy. The CTxB detection performances of the CCB, including sensitivity, selectivity, and long-term stability, were determined using electrochemical impedance spectroscopy (EIS). Based on the results, the CCB had an excellent limit of detection of ~11.46 nM and a detection range spanning 100 ng/mL - 1 mg/mL. Further, the CCB had high selectivity for the CTxB compared to different interfering molecules, which are abundant constituents of intestinal fluid and fecal matter in the human body. The long-term stability of the CCBs was also verified for 3 weeks using EIS. Overall, the CCB was found to have an excellent potential for application to point-of-care and cost-effective testing for CTxB detection in developing countries. © 2022, The Authors. All rights reserved.

关键词： Electrochemical impedance spectroscopy

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Evaluation of various phase-transition materials for steep switching super-low power application in the latest technology node

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Results in Physics 2024年 60卷

作者： Jung, Hanggyo Chang, Jeesoo Jeon, Jongwook Department of Semiconductor Convergence Engineering Sungkyunkwan University 2066 Seobu-ro Jangan-gu Gyeonggi-do Suwon-si 16419 South Korea Data and Information Tech. (DIT) Center Samsung Electronics Samsung-ro 129 Gyeonggi-do Suwon-si 16677 South Korea Department of Electrical and Computer Engineering Sungkyunkwan University 2066 Seobu-ro Jangan-gu Gyeonggi-do Suwon-si 16419 South Korea

Recently, a phase-transition field effect transistor (phase-FET) integrated with a phase-transition material (PTM) is attracting attention as a steep switching device, and attempts to solve the power consumption limitation of conventional CMOS using various PTMs are continuing. In order to utilize the phase-FET, it is essential to design an appropriate device and circuit characteristics by carefully considering the close correlation between the baseline-FET and the PTM and the hysteresis characteristics caused by the phase-transition. In this work, by integrating various PTMs according to the baseline FETs in various technology nodes, the logic and SRAM characteristics implemented the phase-FET were investigated, and the appropriate PTM and the electrical characteristic target required for the PTM were presented through systematic analysis. As a result, it was confirmed that single crystalline vanadium di-oxide (SC VO₂) has characteristics suitable for constructing phase-FETs compared to other candidate PTMs in 32 nm planar FET, 7 nm Fin-FET, and 3 nm gate-all-around FET technology nodes. As a result of benchmarking with conventional-FET at each technology node, in the case of logic, the speed is 26.15% (32 nm), 20.26% (7 nm), and 20.05% (3 nm), and in the case of memory, standby power, read stability and write time are improved. © 2024

关键词： Phase-FET Phase-transition-materials SRAM Steep switching device Super-low power application

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Development of Low-Temperature Doping Process in Cdse-Nanocrystal Thin Films for Flexible Electronic and Optoelectronic Devices

SSRN

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SSRN 2022年

作者： Lee, Yong Min Jung, Byung Ku Ahn, Junhyuk Park, Taesung Shin, Chanho Ng, Tse Nga Kim, In Soo Choi, Ji-Hyuk Oh, Soong Ju Department of Semiconductor Systems Engineering Korea University Seoul02841 Korea Republic of Department of Materials Science and Engineering Korea University Seoul02841 Korea Republic of Materials Science Engineering Program Department of Electrical and Computer Engineering University of California San Diego La Jolla CA92093 United States Nanophotonics Research Center Korea Institute of Science and Technology Seoul02792 Korea Republic of Department of Converging Science and Technology KHU KIST Seoul02447 Korea Republic of Resources Utilization Research Center Korea Institute of Geoscience and Mineral Resources Daejeon34132 Korea Republic of

We introduce an effective surface-doping strategy for CdSe nanocrystals (NCs) by examining the size-dependency of the doping behavior. A CdSe NC thin-film transistor (TFT) is fabricated via a doping process with InCl3 treatment followed by an annealing process. Spectroscopic and electronic device characterization reveal that smaller NCs are more effectively doped than larger NCs at all annealing temperatures. This is attributed to the larger specific surface area, where the dopant can be more readily coordinated. The degenerate behavior of a 3.3-nm CdSe-NC TFT appears at a lower temperature than that of larger NC TFTs. We achieve a high electron mobility and on-to-off current ratio of 1.79 cm2/Vs and 5.2 × 105, respectively, in a low-temperature annealing process (150 °C) with 3.3-nm CdSe NCs. This facilitates the fabrication of a flexible CdSe-NC TFT, which is demonstrated on a polyethylene terephthalate substrate with an Al2O3 dielectric layer using atomic layer deposition. The flexible 3.3-nm CdSe-NC TFT is successfully fabricated even at 150 °C, with a high on-to-off current ratio and low hysteresis at a low operation voltage, which is impossible for larger CdSe-NC TFTs. © 2022, The Authors. All rights reserved.

关键词： Nanocrystals

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Effects of Hydrogen on Endurance Characteristics in NAND Flash Memories

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ECS Advances 2022年第4期1卷 042001-042001页

作者： Chiu, Yung-Yueh Liu, Wen-Chien Chen, Yu-Jung Kumaria, Roshni Takeshita, Toshiaki Yano, Masaru Shirota, Riichiro Department of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu 300 Taiwan College of Semiconductor Research National Tsing Hua University Hsinchu 300 Taiwan EECS International Graduate Program National Yang Ming Chiao Tung University Hsinchu 300 Taiwan Winbond Electronics Corporation Kanagawa 222-0033 Japan

This study comprehensively investigates the effect of hydrogen content in forming gas annealing (FGA) on the endurance of NAND flash memories by statistically analyzing the transconductance (G_m,max) characteristics. The G_m,max degradation (ΔG_m,max) worsened with higher cycling temperature, delayed time period from erasing to programming (t_EP) operation, and higher word-line bias (V_A) during t_EP. Moreover, these effects become more pronounced as the hydrogen content in FGA increases. Using the measured G_m,max distributions and Monte -Carlo TCAD technology, the activation energy (E_A) of oxide damage creation can be extracted. The extracted E_A values were 50 meV and 160 meV for the diluted (4%) and pure (100%) hydrogen samples, respectively. This suggests that a higher hydrogen concentration results in more ionized hydrogen atoms remaining in the oxide layer. During t_EP, these hydrogen ions can drift near the Si/SiO₂ surface, where they may react to form trap states. E_A is revealed to have a linear relationship with respect to V_A, where the slope is independent of the hydrogen content in FGA. © 2022 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.

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Coherent growth and characterization of van der Waals 1T-VSe2 layers on GaAs(111)B using molecular beam epitaxy

arXiv

引用

arXiv 2020年

作者： Zhu, Tiancong O’Hara, Dante J. Noesges, Brenton A. Zhu, Menglin Repicky, Jacob J. Brenner, Mark R. Brillson, Leonard J. Hwang, Jinwoo Gupta, Jay A. Kawakami, Roland K. Department of Physics Ohio State University ColumbusOH43210 United States Program in Materials Science and Engineering University of California RiversideCA92521 United States Materials Science Division Lawrence Livermore National Laboratory LivermoreCA94550 United States Department of Materials Science and Engineering Ohio State University ColumbusOH43210 United States Department of Electrical and Computer Engineering Ohio State University ColumbusOH43210 United States Semiconductor and Epitaxy Analysis Laboratory Ohio State University ColumbusOH43210 United States

We report epitaxial growth of vanadium diselenide (VSe2) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe2 films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe2, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices. Copyright © 2020, The Authors. All rights reserved.

关键词： Molecular beam epitaxy

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Van der Waals device integration beyond the limits of van der Waals forces using adhesive matrix transfer

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Nature Electronics 2024年第1期7卷 17-28页

作者： Satterthwaite, Peter F. Zhu, Weikun Jastrzebska-Perfect, Patricia Tang, Melbourne Spector, Sarah O. Gao, Hongze Kitadai, Hikari Lu, Ang-Yu Tan, Qishuo Tang, Shin-Yi Chueh, Yu-Lun Kuo, Chia-Nung Lue, Chin Shan Kong, Jing Ling, Xi Niroui, Farnaz Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA United States Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA United States Department of Chemical Engineering Massachusetts Institute of Technology CambridgeMA United States Department of Physics Massachusetts Institute of Technology CambridgeMA United States Department of Chemistry Boston University BostonMA United States Department of Materials Science and Engineering National Tsing Hua University Hsinchu Taiwan Semiconductor Research Center Hon Hai Research Institute Taipei Taiwan College of Semiconductor Research National Tsing Hua University Hsinchu Taiwan Department of Physics National Cheng Kung University Tainan Taiwan Taiwan Consortium of Emergent Crystalline Materials National Science and Technology Council Taipei Taiwan Program on Key Materials Academy of Innovative Semiconductor and Sustainable Manufacturing National Cheng Kung University Tainan Taiwan Division of Materials Science and Engineering Boston University BostonMA United States The Photonics Center Boston University BostonMA United States

Pristine van der Waals (vdW) heterostructures formed between two-dimensional (2D) and other materials can be used to create optical and electronic devices. However, the weak vdW forces alone do not allow direct physical stacking of arbitrary layers. As a result, vdW heterostructure fabrication typically requires solvents, sacrificial layers or high temperatures, which can introduce damage and contaminants. Here, we show that adhesive matrix transfer can eliminate these limitations and can provide vdW integration beyond the limits of vdW forces. In the approach, a hybrid high- and low-adhesion surface is used to decouple the forces driving the transfer from the vdW forces defining the heterostructure of interest. We show that the technique can be used to achieve direct vdW integration of diverse 2D materials (MoS2, WSe2, PtS2 and GaS) with dielectrics (SiO2 and Al2O3), which is conventionally forbidden but critical for active devices and scalable, aligned heterostructure formation. The approach also allows single-step 2D material-to-device integration, which we illustrate by fabricating arrays of monolayer MoS2 transistors. As any exposure to solvents or polymers is avoided, the interfaces and surfaces remain pristine. Thus, intrinsic 2D material properties can be probed without the influence of processing steps. The materials can be further engineered through surface treatments and used to fabricate unconventional device form factors. © 2023, The Author(s), under exclusive licence to Springer Nature Limited.

关键词： Van der Waals forces

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Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit

arXiv

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arXiv 2018年

作者： O'Hara, Dante J. Zhu, Tiancong Trout, Amanda H. Ahmed, Adam S. Luo, Yunqiu [Kelly] Lee, Choong Hee Brenner, Mark R. Rajan, Siddharth Gupta, Jay McComb, David W. Kawakami, Roland K. Program in Materials Science and Engineering University of California RiversideCA92521 United States Department of Physics Ohio State University 191 W. Woodruff Ave. ColumbusOH43210 United States Center for Electron Microscopy and Analysis Ohio State University ColumbusOH43212 United States Department of Materials Science and Engineering Ohio State University ColumbusOH43210 United States Department of Electrical and Computer Engineering Ohio State University ColumbusOH43210 United States Semiconductor Epitaxy and Analysis Laboratory Ohio State University ColumbusOH43210 United States

Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring twodimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSex) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe2) monolayer, while for thicker films it could originate from a combination of vdW MnSe2 and/or interfacial magnetism of α-MnSe(111). Magnetization measurements of monolayer MnSex films on GaSe and SnSe2 epilayers show ferromagnetic ordering with large saturation magnetization of ~ 4 Bohr magnetons per Mn, which is consistent with density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe2. Growing MnSex films on GaSe up to high thickness (~ 40 nm) produces α-MnSe(111), and an enhanced magnetic moment (~ 2x) compared to the monolayer MnSex samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveal an abrupt and clean interface between GaSe(0001) and α-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe2 monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing. Copyright © 2018, The Authors. All rights reserved.

关键词： Molecular beam epitaxy

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Reduction of interface defects in gate-recessed GaN HEMTs by neutral beam etching

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Materials Today Advances 2024年 23卷

作者： Yu, Chia Hao Chiang, Wei Hsiang Chen, Yi-Ho Samukawa, Seiji Wuu, Dong Sing Chung, Chin-Han Hsiao, Ching-Lien Horng, Ray Hua Institute of Electronics National Yang Ming Chiao Tung University Department of Materials Science and Engineering National Chung Hsing University Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Institute of Comunications Engineering National Yang Ming Chiao Tung University Department of Applied Materials and Optoelectronic Engineering National Chi Nan University International College of Semiconductor Technology National Yang Ming Chiao Tung University Thin Film Physics Division Department of Physics Chemistry and Biology (IFM) Linköping University

This study investigates and compares the impact of different etching techniques on the fabrication of GaN high electron mobility transistors (HEMTs) between the inductively coupled plasma reactive ion etching (ICP-RIE) and the neutral beam etching (NBE) for the gate recess. By conducting direct current analysis, it was found that devices manufactured using the NBE exhibited superior electrical performance as compared with those produced using the ICP-RIE. These enhanced electrical characteristics include a transconductance of up to 100.4 mS/mm, a threshold voltage (V_th) of −2.3 V, an on/off current ratio of 1.1 × 10⁹, a subthreshold swing (S.S.) of 99.63 mV/dec, and a remarkably low gate leakage current. Additionally, we noted varying degrees of hysteresis in the I–V characteristics were related to process disparities possibly leading to interface defects. Multi-frequency capacitance-voltage (C–V) measurements were used to identify the interface defects at the oxide/AlGaN interface of the gate. The results revealed that devices fabricated using the NBE exhibited a lower interface defect density as compared with those fabricated using the ICP-RIE, thereby elucidating the reduced hysteresis observed in the I–V characteristics. These findings indicated the significant advantages of the NBE process in the fabrication of GaN HEMTs. © 2024 The Authors

关键词： GaN HEMTs Gate recess Interface defects Multi-frequency C–V Neutral beam etching

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In-Cell Neuromorphic Computing in Solid Oxide Fuel Cells for Bifunctional Electrochemical Power Generation and Artificial Intelligence

SSRN

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SSRN 2024年

作者： Seo, Haewon Song, Min-Kyu Ko, Hyun Woo Kang, Ji-Hoon Lee, Giho Park, Sun-Young Kim, Hyunwoo J. Mun, Sungchul Kim, Jeehwan Yoon, Kyung Joong Park, Min-Chul Center for Energy Materials Research Korea Institute of Science and Technology Seoul02792 Korea Republic of Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA02139 United States Department of Mechanical Engineering Massachusetts Institute of Technology CambridgeMA02139 United States Center for Opto-Electronic Materials and Devices Post-silicon Semiconductor Institute Korea Institute of Science and Technology Seoul02792 Korea Republic of Department of Computer Science and Engineering Korea University Seoul02841 Korea Republic of Technological Convergence Center Korea Institute of Science and Technology Seoul02792 Korea Republic of Department of Industrial Engineering Jeonju University Jeollabuk-do 55069 Korea Republic of Department of Materials Science and Engineering Massachusetts Institute of Technology CambridgeMA02139 United States School of Electrical Engineering Korea University Seoul02841 Korea Republic of

Solid oxide fuel cells (SOFCs) are all-solid-state electrochemical devices that convert the chemical energy of fuel into electricity, and they represent one of the most efficient and versatile means of clean power generation. Herein, we report the newly discovered potential of SOFCs as neuromorphic computing devices and verify the synaptic properties, including paired-pulse facilitation and potentiation/depression, under specific operating conditions, which enable the implementation of a brain-like computing system. We simulate image classification tasks using an artificial neural network (ANN) and confirm that the classification accuracy is 85.4%, indicating that the SOFC system is capable of performing cognitive computing in addition to having power generation functionality. This work highlights an innovative concept of in-cell computing using bifunctional SOFCs that handle computation/memory functions in electric power generation devices, and our findings will break new ground in power management in various sectors, including smart grid systems, electric vehicles, and smart mobility © 2024, The Authors. All rights reserved.

关键词： Neural networks

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