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IEEE PhotonicsGlobal@Singapore, IPGC

作者： Ching-Fuh Lin Jing-Shun Huang Shu-Jia Syu Jiun-Jie Chao Chen-Yu Chou Chieh-Yu Hsiao Chun-Yu Lee Graduate Institute of Photonics and Optoelectronics Graduate Institute of Electronics Engineering and Department of Electrical Engineering National Taiwan University Taipei Taiwan

Hybrid thin-film solar cells are fabricated on the glass substrate using ZnO nanorods, well-aligned single-crystalline Si nanowires (SiNWs), and poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) as well as micro-structured III-V semiconductors . The effect of introducing a solution-processed fullerene as an electron transport layer on the polymer/ZnO nanorod array composite solar cells is investigated . Devices with the fullerene layer exhibit a larger short circuit current density (10.16 mA/cm 2 ) than those without this layer (9.37 mA/cm 2 ). For the Si NWs with P3HT:PCBM, the well-aligned SiNWs are fabricated from Si wafer and transferred onto the glass substrate with the P3HT:PCBM. Such SiNWs provide uninterrupted conduction paths for electron transport, enhancing the optical absorption to serve as an absorber, and increase the surface area for exciton dissociation . Our investigations show that Si NWs are promising for hybrid organic photovoltaic cells with improved performance by increasing the short-circuit current density from 7.17 to 11.61 mA/cm 2 . III-V semiconductors are also used for thin-film solar cells. InGaP/GaAs two-junction square-based (25 mum times25 mum) cuboid arrays with a height of 6.52 mum were released from GaAs substrates by the epitaxial lift-off process. These InGaP/GaAs cuboid arrays were transplanted to the P3HT film spun on ITO glass substrate. In addition to the significant cost reduction, our method shows the rapid transplantation and the potential for high-efficiency large-area devices fabrication.

关键词： Photovoltaic cells Substrates Glass Gallium arsenide Semiconductor thin films Zinc oxide III-V semiconductor materials Electrons Polymer films Nanowires

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Self-aligned top-gate amorphous In-Ga-Zn-O thin film transistors

Self-aligned top-gate amorphous In-Ga-Zn-O thin film transis...

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IEEE Photonics Conference (IPC)

作者： Cheng-Han Wu Hsing-Hung Hsieh Chung-Chih Wu Graduate Institute of Electronics Engineering Graduate Institute of Photonics and OptoElectronics and Department of Electrical Engineering National Taiwan University Taipei Taiwan

We report self-aligned co-planar top-gate IGZO TFTs with using typical lithography and etching techniques. The fabrication involves no back-side exposure, and thus is more compatible with the typical TFT manufacturing.

关键词： Amorphous materials Thin film transistors Hydrogen Dielectrics and electrical insulation Annealing Lithography Etching Manufacturing Temperature CMOS technology

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Joint Carrier Synchronization and Equalization for OFDM Systems Over Multipath Fading Channel

Joint Carrier Synchronization and Equalization for OFDM Syst...

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IEEE Conference on Vehicular Technology (VTC)

作者： Chih-Feng Wu Muh-Tian Shiue Chorng-Kuang Wang Graduate Institute of Electronics Engineering and Department of Electrical Engineering National Taiwan University Taipei Taiwan Department of Electrical Engineering National Central University Chungli Taiwan

In this paper, a joint carrier synchronization and equalization algorithm is proposed for OFDM systems in the tracking stage. Significantly, the carrier synchronization scheme is a dual-loop, which is composed of an outer and an inner loops, with the multirate processing to eliminate the carrier frequency offset and the channel phase variation. In addition, the gain equalization loop is employed to compensate the magnitude distortion on each subchannel in the frequency domain. Based on MMSE criterion, the cost function of the joint algorithm is presented to minimize the decision error on each subchannel and, further, lower the uncoded BER concurrently. Besides, the subchannel SDR is derived in terms of the powers of the phase and gain jitters. Considering a figure of merit for CFO RMS error, the improvement for the joint algorithm is about 1-order at least compared with the considered algorithms. According to BER derivation and simulation in an AWGN channel, SNR losses at BER=10 -6 from the theory to the derivation and simulation of the proposed algorithm are about 0.1 dB (derivation) and 0.4 dB (simulation). The proposed joint algorithm can estimate and compensate the carrier frequency offset as well as channel distortion accurately.

关键词： OFDM Synchronization Gain Joints Signal to noise ratio Frequency domain analysis Fading

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Metal oxide semiconductor UV sensor

Metal oxide semiconductor UV sensor

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IEEE SENSORS

作者： W.S. Ho C.-H. Lin P. -S. Kuo W. W. Hsu C. W. Liu T.-H. Cheng Y.-Y Chen Department of Electrical Engineering and Graduate Institute of Electronics Engineering National Taiwan University Taipei Taiwan Department of Electrical Engineering and Graduate Institute of Photonics and Optoelectronics National Taiwan University Taipei Taiwan

By using appropriate the material of gate electrode in metal-oxide-semiconductor structure, a Si-based photodetector for ultraviolet light (319 nm) detection has been demonstrated. Due to the spectral dependence of absorption coefficients of the Ag as gate electrode, the narrow-band detection of ultra violet can be achieved. The Ag photodetector exhibits maximum responsivity value of 5.59 mA/W at 319 nm. As compared to the p-i-n structure, the metal-oxide-semiconductor tunneling photodetector has a much simpler process and can integrate with integrated circuitry.

关键词： Photodetectors Tunneling Electrodes Narrowband PIN photodiodes Electromagnetic wave absorption Photoconductivity Wavelength measurement Circuits Semiconductor diodes

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A 256-point dataflow scheduling 2×2 MIMO FFT/IFFT processor for IEEE 802.16 WMAN

A 256-point dataflow scheduling 2×2 MIMO FFT/IFFT processor...

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IEEE Asian Conference on Solid-State Circuits (ASSCC)

作者： Fang-Li Yuan Yi-Hsien Lin Chih-Feng Wu Muh-Tian Shiue Chorng-Kuang Wang Graduate Institute of Electronics Engineering and Department of Electrical Engineering National Taiwan University Taipei Taiwan Department of Electrical Engineering National Central University Chungli Taiwan

In this paper, an efficient solution of MIMO FFT/IFFT processor for IEEE 802.16 WMAN is presented. By applying the proposed mixed-radix dataflow scheduling (MRDS) technique, the effective hardware utilization can be raised to 100%. Therefore, a single butterfly unit within each pipeline stage is sufficient to deal with the two data sequences, and the hardware complexity is significantly reduced. The proposed FFT/IFFT processor has been emulated on the FPGA board. The signal-to-quantization noise ratio (SQNR) is over 44 dB for QPSK and 16/64-QAM signals. Furthermore, a test chip has been designed using standard 0.18-mum CMOS technology with a core area of 887 times 842 mum 2 . According to the post-layout simulation results, the design consumes 46 mW at 64 MHz operating frequency, which meets the maximum throughput requirements of IEEE 802.16 WMAN.

关键词： Processor scheduling MIMO Hardware CMOS technology Pipelines Field programmable gate arrays Signal to noise ratio Quadrature phase shift keying Testing Frequency

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Cathodoluminescence study on spatial luminescence properties of InN/GaN multiple quantum wells consisting of 1-monolayer-thick InN wells/GaN matrix

Cathodoluminescence study on spatial luminescence properties...

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作者： Hwang, E.S. Che, S.B. Saito, H. Wang, X. Ishitani, Y. Yoshikawa, A. Graduate School of Electrical and Electronics Engineering Chiba University Chiba 263-8522 Japan InN-Project CREST-program of JST Chiba University Chiba 263-8522 Japan VBL Chiba University Chiba 263-8522 Japan

Spatially resolved luminescence properties of InN/GaN multiple quantum wells (MQWs) consisting of nominally one monolayer (1-ML)-thick InN QWs embedded in a GaN matrix are studied by cross-sectional and plan-view cathodoluminescence measurements. First it is confirmed that the dominant emission peaks observed at around 390 nm to 430 nm in the MQWs samples are attributed to the effects of inserting ˜ 1-ML-thick InN wells in the GaN matrix, resulting in efficient localization of GaN excitons at InN QWs. Furthermore, it is revealed that the detailed structure of the MQWs, such as the thickness distribution and interface sharpness, is very sensitive to the presence of surface defects such as hillocks around screw-component threading dislocations, resulting in different emission wavelengths/energies. This is because the epitaxy process for depositing such thin InN wells is seriously affected by the atomic-level surface structures/properties of the growth front. It will be concluded that it is necessary to use lower dislocation density GaN bulk templates to obtain much higher structural quality InN/GaN MQWs good enough for characterizing their optical properties. © 2007 TMS.

关键词： Semiconductor quantum wells

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Personal mobile healthcare diagnosis system with auto switching of IEEE802.15.4 network and CDMA network

Personal mobile healthcare diagnosis system with auto switch...

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作者： Yau, Chiew-Lian Myllyla, Risto Chung, Wan-Young Department of Ubiquitous IT Graduate School of Design and IT Dongseo University Busan 617-716 Korea Republic of Department of Electrical and Information Engineering University of Oulu Oulu FIN 90014 Finland Division of Electronics Computer and Telecommunication Engineering Pukyong National University Busan 608-737 Korea Republic of

A personal mobile healthcare diagnosis (M-Health) system with the ability of network auto-switching in IEEE802.15.4 and CDMA network environments was designed and implemented. The main goal of M-Health system is to create a well-establish quality, wide coverage area, improved capacity and enhanced QoS heterogeneous platform to delivery a healthcare solution to patients inside and outside hospital environments. M-Health system provides the interoperability layer to access to the patient's physiological signs and relays them to medial center through short-range (IEEE802.15.4) or long-range (CDMA) network. Some additional features like coronary heart disease (CHD) risk calculator and local ECG diagnosis are also implemented in cellular phone. The CHD risk calculator feature enables patients to estimate the prediction of a 10 year CHD risk based upon the given risk factors while the local ECG diagnosis feature helps to capture, detect and analyze the ECG signal as soon as it is received from the patient, and transmit only detected abnormally ECG signals to medical center. In that sense, the system not only provides a healthcare solution that allows continually healthcare monitoring of patients without intruding to their life inside and outside hospital, but also helps to reduce the expensive communication cost and overall hospitalization period. Copyright © 2008 American Scientific Publishers All rights reserved.

关键词： mHealth

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Growth of Feature-Controlled ZnO Nanotube Arrays by Using Patterned Apertures with Hydrothermal Method

Growth of Feature-Controlled ZnO Nanotube Arrays by Using Pa...

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IEEE Conference on Nanotechnology

作者： Cha-Hsin Chao Jing-Shun Huang Ching-Fuh Lin Department of Electrical Engineering Graduate Institute of Electronics Engineering Taiwan Graduate Institute of Photonics and Optoelectronics National Taiwan University Taipei Taiwan

ISBN: (纸本)9781424421039

ZnO nanotube arrays with controlled diameter and density were synthesized on ZnO/Si substrate with thereon two-dimensional periodic polymer aperture arrays at low temperature. The growth behavior of the ZnO nanotube arrays was found to be strongly dependent on the opening of the aperture. An obvious size and density variation of ZnO nanotube arrays with the size of aperture was observed. The detailed growth behavior was characterized and analyzed in this research. This investigation offers a capability to control the formation of single/multiple ZnO nanotube(s) with both size and density onto random substrates for potential optoelectronics applications.

关键词： Zinc oxide Apertures Polymers Substrates Electron tubes Zinc Surface morphology

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Content-aware image resizing using perceptual seam carving with human attention model

Content-aware image resizing using perceptual seam carving w...

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IEEE International Conference on Multimedia and Expo (ICME)

作者： Daw-Sen Hwang Shao-Yi Chien Graduate Institute of Electronics Engineering and Department of Electrical Engineering National Taiwan University of Science and Technology Taipei Taiwan

In this paper, a new image resizing technique, perceptual seam carving, is proposed. With considering both face map and saliency map as human attention model in the energy function, it can keep important information in perceptual when the image is downsized. Moreover, a switching scheme between seam carving and resampling is also proposed to avoid excessively distorting the images. Experiments show that the proposed algorithm can generate more desirable resized images than cropping, resampling, and conventional seam carving techniques.

关键词： Face Switches Visualization Pixel Face detection Object detection Computer vision

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PM and $\hbox{NO}_{\rm x}$ Removal for Diesel Engine Emission Using Ozonizer and Chemical Hybrid Reactor

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IEEE Transactions on Industry Applications 2008年第5期44卷 1431-1435页

作者： Toshiaki Yamamoto Akinori Kajimoto Masaaki Okubo Tomoyuki Kuroki Keiichiro Yoshida Graduate School of Energy Systems Engineering Osaka Prefecture University Sakai Japan Department of Mechanical Engineering Graduate School of Engineering Osaka Prefecture University Sakai Japan Department of Electrical and Electronics Engineering Faculty of Engineering Musashi Institute of Technology Tokyo Japan

Over the years, we have investigated particulate matter (PM) and NO x reduction using nonthermal plasma-chemical hybrid processes without using catalysts. Among nonthermal plasma hybrid processes, the ozonizer combined with the chemical hybrid reactor was investigated using a 479 cc (5.5 kW) power generation diesel engine. The PM deposited on the diesel particulate filter can be incinerated by ozone and NO 2 in a wide range of flue gas temperature. The NO was oxidized to form NO 2 by ozone, and NO 2 was reduced by the 3% Na 2 SO 3 chemical reactor. As the results, PM deposited on both metal and ceramic filters were successfully removed even at ambient temperature. The rate of PM incineration depends on the amount of ozone injected and was significantly higher than the rate of PM generation. Using 2.4% ozone concentration with a flow rate of 10 L/min, 82% of NO having 720 L/min was oxidized to NO 2 , and 78% of NO x was removed as a chemical scrubber. However, NO x removal was deteriorated about 10% after 1-h operation. This was attributed to Na 2 SO 3 oxidation by air, which was evidenced by the reduction of pH in the chemical reactor.

关键词： Plasma temperature Chemical reactors Plasma chemistry Filters Incineration Chemical processes Inductors Power generation Diesel engines Flue gases

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