Finite element analysis is used to simulate cone indentation creep in materials across a wide range of hardness, strain rate sensitivity, and work-hardening exponent. Modeling reveals that the commonly held assumption...
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We have investigated the solid nucleation mechanism in laser-quenched Si films on SiO2. Previously neglected experimental steps, consisting of BHF-etching and irradiation in vacuum, were implemented to reduce potentia...
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Hf1-xSixOy (HfSiO) gate dielectrics with a wide range of Si composition are grown by an atomic layer deposition (ALD). The Si composition in HfSiO films can be tailored with precision by manipulating the ALD sub-cycle...
Hf1-xSixOy (HfSiO) gate dielectrics with a wide range of Si composition are grown by an atomic layer deposition (ALD). The Si composition in HfSiO films can be tailored with precision by manipulating the ALD sub-cycle sequence of Hf and Si precursors. Through this method, the effects of Si composition of HfSiO films on the physical and electrical properties are investigated with different thermal budget. Si incorporation into HfO2 delays the crystallization of the films, which improved the leakage current characteristics. However, it also increases capacitance equivalent oxide thickness values due to the increased SiO2 content which has a relatively lower dielectric constant. By optimizing the Si composition, high quality HfSiO gate dielectrics having comparable insulator properties to HfO2 but improved thermal stability were achieved
The effect of atomic layer deposited Al2O3, SrO, and La2O3 capping layers with HfO2 gate dielectrics were examined ffor flat band voltage (VFB) modulation. Al2O3 capping layers cause a VFB shift into the positive volt...
The effect of atomic layer deposited Al2O3, SrO, and La2O3 capping layers with HfO2 gate dielectrics were examined ffor flat band voltage (VFB) modulation. Al2O3 capping layers cause a VFB shift into the positive voltage direction, while SrO and La2O3 capping layers cause a shift into the negative voltage direction. The bottom capping layer, which positions between the Si substrate and the HfO2 dielectric was more effective in modulating the VFB compared to the top capping layer. The insulating properties of the gate dielectric stacks with different capping layers were also examined. X-ray photoelectron spectroscopy analysis verified that top capping layers did not generally diffuse to the interface between the Si substrate and the HfO2 dielectrics, which supports the result that bottom capping layers are more effective in modulating the VFB.
Alumina ceramics in a wear test reacts with air humidity to form a film layer of aluminum hydroxide which acts as a lubricant. Increasing sliding test load and/or speed affects the tribofilm and changes the wear regim...
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Alumina ceramics in a wear test reacts with air humidity to form a film layer of aluminum hydroxide which acts as a lubricant. Increasing sliding test load and/or speed affects the tribofilm and changes the wear regime from mild to severe. The purpose of this work was to determine critical values of load and sliding speed for the wear regime transition under controlled atmosphere humidity, in a pin-on-disc test. The wear rate and the worn surface SEM image and roughness allowed to distinguish the mild and severe wear regime for different speed/load combinations so that the boundaries of mild wear region was determined. The boundaries were characterized by a narrow transition zone. The image analyses have shown distinct wear mechanisms as function of sliding speed and load.
We present the results of characterization and analysis of the optical dielectric function of monolithic BaxSr1-xTiO3 films prepared by metal-organic solution deposition (MOSD). Lorentz Oscillator + Drude parameters a...
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This paper describes the influence of ballast resistor and field screening on the electron field emission behavior of nano-diamond emitter arrays fabricated on micropatterned silicon pillars. Arrays of 50 x 50 silicon...
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Silicon-on-insulator (SOI) presents a unique model system for exploring the stability of crystalline nanomaterials in metastable configurations. We show that the initial destabilization of ultrathin SOI is related to ...
Silicon-on-insulator (SOI) presents a unique model system for exploring the stability of crystalline nanomaterials in metastable configurations. We show that the initial destabilization of ultrathin SOI is related to mechanical stress, in contrast to phenomena at later times driven by the energy of the SiO2/Si interface. Stepped rectangular truncated pyramids, with lateral dimensions of tens of nanometers, are formed on the outer Si layer of ultrathin (001)-oriented SOI during heating in ultrahigh vacuum. Pyramid edges are bounded by doubled atomic steps, with corners consisting of a complex series of single-layer steps. The shape of these nanopyramids represents a balance between stress-induced roughening and the elastic interaction between steps. SOI allows the precisely known energetics of silicon surfaces to be readily adapted to materials with nanoscale dimensions.
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