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International Conference on Display Technology, ICDT 2022

作者： Xu, Yuming Li, Bin Deng, Sunbin Zhong, Wei Yin, Xuemei Wu, Zhaohui Kowk, Hoi-Sing Chen, Rongsheng School of Microelectronics South China University of Technology Guangzhou510640 China State Key Laboratory on Advanced Displays and Optoelectronics Technologies Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong Purdue University West LafayetteIN United States School of integrated circuits Guangdong University of Technology Guangzhou China School of artificial intelligence Zhuhai City Polytechnic College Zhuhai China

This paper presents a frontend amplifier based on the n-type only indium-tin-oxide (ITO)-stabilized ZnO thin film transistors (TFTs) on glass substrate. The amplifier has an external-bias AC-coupled, open-loop capacitor bootstrap structure. The area and power consumption are 41 mm2 and 0.1 mW (8V), respectively. Measurement results show a gain of 20 dB, a bandwidth of 3 Hz–6 kHz, a common mode rejection ratio (CMRR) up to 42 dB, an input impedance of 100 MΩ, and an input-referred noise of 106 μVrms (integrated from 1 Hz–200 Hz). The noise efficiency factor (NEF) and power efficiency factor (PEF) of the amplifier are respectively 248 and 4.9×105. The amplifier is successfully used to measure the heart-rate signal. © 2022, John Wiley and Sons Inc. All rights reserved.

关键词： Tin oxides

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Compact optical mode and polarization filtering devices based on subwavelength gratings on a lithium niobate on insulator platform 13

Compact optical mode and polarization filtering devices base...

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13th International Conference on Information Optics and Photonics, CIOP 2022

作者： Han, Xu Chen, Li Jiang, Yongheng Frigg, Andreas Xiao, Huifu Nguyen, Thach Giang Boes, Andreas Yang, Jianhong Ren, Guanghui Su, Yikai Mitchell, Arnan Tian, Yonghui Institute of Microelectronics Key Laboratory for Magnetism and Magnetic Materials of MOE School of Physical Science and Technology Lanzhou University Gansu Lanzhou730000 China School of Engineering RMIT University MelbourneVIC3001 Australia Ligentec SA Ecublens1024 Switzerland The State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic Engineering Shanghai Jiao Tong University Shanghai200240 China

ISBN: (纸本)9781510660632

We propose and demonstrate compact optical mode and polarization filtering devices on a lithium niobate on insulator (LNOI) platform. The subwavelength grating-based high-order mode pass filter and TM-pass polarizer are designed and experimentally demonstrated successfully. The measured insertion losses and extinction ratio at 1550 nm are lower than 1.9 dB and larger than 30 dB, respectively, while the device lengths are only about 50 μm. © 2022 SPIE.

关键词： Silicon nitride

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A 915MHz $19\mu \mathrm{W}$ Blocker-Enhanced Wake-Up Receiver with Frequency-Hopping Two-Tone Modulation Achieving 53dB Tolerance to In-Band Interference

A 915MHz $19\mu \mathrm{W}$ Blocker-Enhanced Wake-Up Receive...

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IEEE Symposium on Radio Frequency Integrated circuits (RFIC)

作者： Heyu Ren Dawei Ye Binbin Chen Xu Jin Wenjun Gong Rongjin Xu C.-J. Richard Shi State Key Laboratory of ASIC and System Fudan University China Institute of Brain-inspired Circuits and Systems (iBiCAS) Fudan University China Department of Electrical and Computer Engineering University of Washington USA

ISBN: (数字)9781665496117

ISBN: (纸本)9781665496124

A 915MHz ultra-low-power blocker-enhanced wake- up receiver (BE-WuRx) is presented in a 65nm CMOS process. Employing the proposed frequency-hopping two-tone modulation (FH-TTM), the BE-WuRx can dynamically convert the in-band blocker power to data power, and achieves a −63.6dBm sensitivity without blocker and a −90dBm enhanced sensitivity with a −25dBm CW interferer, while just consuming $\mathbf{19}\mathbf{\mu}\mathbf{W}$ . With the −63.6dBm sensitivity, the BE-WuRx performs 53dB tolerance to the in-band blocker, exhibiting 14dB improvement compared to the case that FH- TTM is off. The wake-up latency is 6.4ms for a quiet channel and 6.4 to 64ms for a congested channel.

关键词： Sensitivity Frequency modulation Amplitude shift keying Receivers Interference Frequency conversion CMOS process

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Current Carrying Capacity of Inkjet-Printed Nano-Silver Interconnects on Mesoporous PET Substrate

Current Carrying Capacity of Inkjet-Printed Nano-Silver Inte...

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Electronic Components and Technology Conference (ECTC)

作者： El Mehdi Abbara Gurvinder Singh Khinda Mohammed Alhendi Riadh Alhaidari Firas Alshatnawi Behnam Garakani Udara S. Somarathna Mark D. Poliks Department of Systems Science and Industrial Engineering State University of New York Binghamton USA Center for Advanced Microelectronics Manufacturing State University of New York Binghamton USA Materials Science and Engineering Program State University of New York Binghamton USA

Conductors are a basic component in any flexible hybrid electronic device. Their electromechanical reliability has been studied, yet very few studies report their thermoelectric behavior. We report the current carrying capacity of an inkjet-printed nano-silver interconnects on mesoporous PET substrate. For this study, the printed interconnects are approximately 100 μm wide, with two different thicknesses: single layer (~650 nm thick) and double layer (~1 μm thick). Samples were sintered with different parameters of oven and laser sintering. The effect of printing and curing parameters on the trace current-carrying capability is evaluated with and without the presence of an encapsulation layer. At the current sweep range of 0.005-0.08A for single layer traces and 0.005-0.17A for double layer traces, results show that the trace resistance slightly increases and then decreases to a minimal value smaller than the initial resistance before dramatically increases indicating substrate damage. The double-layer traces withstand higher current and reach higher temperature than the substrate glass transition point. The oven sintered traces have higher initial resistance than laser sintered samples reflecting the difference in the percentage of solvent content and the microstructure. A drastic decrease in resistance is noticed at low current for the oven sintered samples, but at higher current, both oven and laser sintered traces showed similar behavior. The printed encapsulation layer did not significantly impact the trace behavior. A thermoelectric simulation of the trace joule heating was generated in order to quantify the thermal energy transmitted to the surrounding environment and capture the temperature of the trace surface. The model was compared to the experimental results and showed a good correlation.

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Co‑packaged optics(CPO):status,challenges,and solutions

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Frontiers of Optoelectronics 2023年第1期16卷 1-40页

作者： Min Tan Jiang Xu Siyang Liu Junbo Feng Hua Zhang Chaonan Yao Shixi Chen Hangyu Guo Gengshi Han Zhanhao Wen Bao Chen Yu He Xuqiang Zheng Da Ming Yaowen Tu Qiang Fu Nan Qi Dan Li Li Geng Song Wen Fenghe Yang Huimin He Fengman Liu Haiyun Xue Yuhang Wang Ciyuan Qiu Guangcan Mi Yanbo Li Tianhai Chang Mingche Lai Luo Zhang Qinfen Hao Mengyuan Qin School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong KongChina HKUST Fok Ying Tung Research Institute Guangzhou 511462China The Hong Kong University of Science and Technology(Guangzhou) Guangzhou 511462China Chongqing United Micro-Electronics Center(CUMEC) Chongqing 401332China Hisense Broadband Multimedia Technologies Co. Ltd.Qingdao 266000China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Microelectronics Xi’an Jiaotong UniversityXi’an 710049China Zhangjiang Laboratory Shanghai 201210China The State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghai 200240China Huawei Technologies Co. Ltd.Shenzhen 440307China College of Computer National University of Defense TechnologyChangsha 410073China Institute of Computing Technology Chinese Academy of SciencesBeijing 100086China

Due to the rise of 5G,IoT,AI,and high-performance computing applications,datacenter trafc has grown at a compound annual growth rate of nearly 30%.Furthermore,nearly three-fourths of the datacenter trafc resides within *** conventional pluggable optics increases at a much slower rate than that of datacenter *** gap between application requirements and the capability of conventional pluggable optics keeps increasing,a trend that is *** optics(CPO)is a disruptive approach to increasing the interconnecting bandwidth density and energy efciency by dramatically shortening the electrical link length through advanced packaging and co-optimization of electronics and *** is widely regarded as a promising solution for future datacenter interconnections,and silicon platform is the most promising platform for large-scale *** international companies(e.g.,Intel,Broadcom and IBM)have heavily investigated in CPO technology,an inter-disciplinary research feld that involves photonic devices,integrated circuits design,packaging,photonic device modeling,electronic-photonic co-simulation,applications,and *** review aims to provide the readers a comprehensive overview of the state-of-the-art progress of CPO in silicon platform,identify the key challenges,and point out the potential solutions,hoping to encourage collaboration between diferent research felds to accelerate the development of CPO technology.

关键词： Co-packaged optics Silicon photonics High-performance computing Advanced packaging External laser Optical power delivery Co-simulation Standardization Transmitter Receiver

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A Novel Multiple Modes Resonant Sensor Featuring Blue Sideband Excitation

A Novel Multiple Modes Resonant Sensor Featuring Blue Sideba...

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IEEE International Conference on Micro Electro Mechanical systems

作者： Jiao Xu Zhuoyue Zheng Jingqian Xi Ziqian Zhang Huafeng Liu Pan Zhang Jianlin Chen Chen Wang Michael Kraft Yuan Wang R. P. Martins Pui-In Mak MOE Key Laboratory of Fundamental Physical Quantities Measurement PGMF and School of Physics Huazhong University of Science and Technology Wuhan P. R. China Institute of Microelectronics State Key Laboratory of Analog and Mixed-Signal VLSI University of Macau Macau China National Key Laboratory of Advanced Micro and Nano Manufacture Technology School of Integrated Circuits Peking University China School of Microelectronics Shanghai University China Department of Electrical Engineering-MNS KU Leuven Leuven Belgium

ISBN: (数字)9798331508890

ISBN: (纸本)9798331508906

This paper reports a novel MEMS resonant structure functioning as a baseline resonant electrostatic force/temperature sensor, highlighting its substantial potential in sensing applications. The resonator, characterized by a dual-cosine structure, is capable of simultaneous multiple resonant modes actuation within the 300 kHz range, through a sole-source drive approach using the recent emerging Blue Sideband Excitation (BSE) technique. This method enables a distinctive multi-modal response, essential for multi-parameter measurements. The research focuses on the sensor’s temperature characteristics, electrostatic perturbation sensitivity, and noise floor. Notably, the study reveals intriguing temperature responses across different modes, where certain modes exhibit a significant frequency rise with increasing temperature, this is counter-intuitive with common MEMS resonator devices, prompting further investigation into the underlying mechanisms. The analysis of electrostatic perturbation sensitivity and noise background further unfolds the resonator’s performance under various excitation conditions, laying a foundation for advancing sensor functionality, and providing solid evidence on the viability of the subject. To sum up, this study highlights the resonator’s potential as a high-precision sensor, opening new opportunities for MEMS sensor design and multi-parameter measurement applications.

关键词： Temperature measurement Micromechanical devices Temperature sensors Electric potential Temperature Sensitivity Perturbation methods Noise Sensors Electrostatics

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Optimization strategies for virtual power plants' participation in high penetration renewable energy systems' day-ahead scheduling

Optimization strategies for virtual power plants' participat...

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12th International Conference on Renewable Power Generation (RPG 2023)

作者： L. Hao Y. Wang L. Zheng F. Xu Y. Zhou L. Yan L. Chen Y. Min State Key Lab of Power Systems Department of Electrical Engineering Tsinghua University Beijing 100084 People's Republic of China Beijing Smart-chip Microelectronics Technology Co. Ltd Beijing 102200 People's Republic of China

With the gradual reduction of conventional fossil fuels, the development of renewable energy has experienced rapid growth. The increasing penetration of renewable energy in the distribution grid presents new challenges and issues for its safe and stable operation. This paper proposes a day-ahead optimization scheduling strategy for the participation of virtual power plants (VPP) in high-penetration renewable energy systems. Firstly, the integration of renewable energy generation systems, energy storage systems, electric vehicles, and flexible loads is consolidated into a unified virtual power plant. Subsequently, a day-ahead optimization scheduling model is formulated, considering the involvement of the virtual power plant in the distribution grid. Finally, simulation calculations are performed on a modified IEEE33 node system. The results demonstrate the effectiveness of the high-penetration renewable energy system facilitated by VPP participation. This system not only enables electricity trading but also optimizes the utilization of internal resources, thereby enhancing the reliability of power supply and effectively promoting the integration of new energy sources.

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Modelling of Frequency Dependence in Self-Rectifying Analog BiFeO3 Memristors

Modelling of Frequency Dependence in Self-Rectifying Analog ...

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IEEE International Conference on Electronics, circuits and systems (ICECS)

作者： Xianyue Zhao Alon Ascoli Ahmet Samil Demirkol Ioannis Messaris Ilia Polian Ronald Tetzlaff Nan Du Institute for Solid State Physics Friedrich Schiller University Jena Jena Germany Department of Quantum Detection Leibniz Institute of Photonic Technology Jena Germany Department of Electronics and Telecommunications Politecnico di Torino Turin Italy Institute of Circuits and Systems Dresden University of Technology Dresden Germany Institute of Computer Science and Computer Engineering University of Stuttgart Stuttgart Germany

ISBN: (数字)9798350377200

ISBN: (纸本)9798350377217

Memristors, recognized as the fourth fundamental circuit element, exhibit highly nonlinear dynamic behavior, analog computing capabilities, and significant potential for chaotic systems and complex dynamics. Self-rectifying analog BiFeO 3 (BFO) memristors, with their high on/off ratio, excellent retention, and remarkable endurance, are particularly promising for these applications. In this work, we present the first demonstration of frequency-dependent measurements on BFO memristors. Our results reveal that the on/off ratio of hysteresis in I-V characteristics and the maximum current in the positive bias range significantly decrease with increasing frequency. We formulated a simplified mathematical model of BFO behavior, based on an exponential ionic drift model for the positive bias region and a diffusion/diode-like I-V behavior for the negative bias region, ensuring high simulation speed while achieving substantial agreement with experimental data. By adjusting model parameters to account for higher amplitudes, we achieved improved alignment with experimental data. Future work will focus on refining the model to better accommodate these dynamic processes and further exploring the relationship between applied bias magnitude and device performance, enhancing the predictive dynamical behavior of BFO memristive devices in practical applications.

关键词： Performance evaluation Current measurement Refining Memristors Predictive models Mathematical models Data models Frequency measurement Nonlinear dynamical systems Hysteresis

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cVTS: A Constrained Voronoi Tree Search Method for High Dimensional Analog Circuit Synthesis

cVTS: A Constrained Voronoi Tree Search Method for High Dime...

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Design Automation Conference

作者： Aidong Zhao Xianan Wang Zixiao Lin Zhaori Bi Xudong Li Changhao Yan Fan Yang Li Shang Dian Zhou Xuan Zeng Microelectronics Department State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai China Department of Electrical Engineering University of Texas Dallas USA Department of Electrical and Computer Engineering University of California San Diego USA School of Data Science Fudan University Shanghai China School of Computer Science Fudan University Shanghai China

A constrained Voronoi tree-based domain decomposition method for high-dimensional Bayesian optimization is proposed to solve large scale analog circuit synthesis problems, which can be formulated as high-dimensional heterogeneous black-box optimization. Hierarchical Voronoi tree progressively breaks down the design space into partitions with implicit performance boundaries such that promising regions are efficiently explored. Fast exploitation is ensured in Voronoi nest via local Bayesian optimization with a few observations. A slice-enhanced Gibbs sampling method is proposed to sample acquisition function cMES in irregular polyhedrons with design constraints. Compared with state-of-the-art methods, cVTS achieves significant speed up without loss of accuracy.

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Sallen-Key High-Pass Filter with Unrelated Tune of Generic Parameter

Sallen-Key High-Pass Filter with Unrelated Tune of Generic P...

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Annual Siberian Russian Workshop on Electron Devices and Materials (EDM)

作者： Darya Yu. Denisenko Nikolay N. Prokopenko Yuri I. Ivanov Nikolay N. Butyrlagin Department of Scientific Research Don State Technical University Rostov-on-Don Russia Department of Automatic Control Systems Don State Technical University Southern Federal University Rostov-on-Don Russia Department of Information Systems and Radio Engineering Academy of Sciences Don State Technical University Institute for Design Problems in Microelectronics of Russian Rostov-on-Don Zelenograd Russia Department of Information Systems and Radio Engineering Don State Technical University Rostov-on-Don Russia

ISBN: (数字)9781665498043

ISBN: (纸本)9781665498050

New second order high-pass filter of the Sallen-Key family circuit is considered, where there is unrelated tune of generic parameters by a digitally controlled resistor - the pole frequency, Q-factor pole and the scale transfer coefficient. The basic mathematical expressions of transfer function for proposed high-pass filter are obtained. A comparison of the parameters of the known and new schemes is given. A Sallen-Key high-pass filter circuit based on a high-frequency emitter follower has been developed. The results of high-pass filter modeling in the Micro-Cap 12 environment using the OP37 operational amplifier and an ideal buffer amplifier are presented. Computer simulation has shown that the pole frequency is adjusted by resistor R5. Adjusting the pole attenuation is possible by changing the resistor R3, while the pole attenuation frequency unchanged, an increase in R3 leads to an increase of the pole attenuation.

关键词： Resistors Q-factor Performance evaluation Temperature dependence Temperature Silicon carbide Computer simulation

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