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2020 International Conference on Electrotechnical Complexes and systems, ICOECS 2020

作者： Prokopenko, N.N. Gulin, A.I. Sukhinets, Zh. A. Butyrlagin, N.V. Don State Tech. Univ. Inst. for Design Problems in Microelectronics of Russian Academy of Sciences Information Systems and Radio Engineering Zelenograd Russia Ufa State Petroleum Technological University Department of Automation of Technological Processes and Productions Ufa Russia Ufa State Aviation Technical University Department of Telecommunication Systems Ufa Russia Don State Technical University Information Systems and Radio Engineering Rostov-on-Don Russia

ISBN: (纸本)9781728191157

A circuit of a binary threshold current RS-flip-flop capable of working with direct and inverse inputs is developed. The peculiarity of this circuit is that to switch from a structure with direct inputs to a second structure with inverse inputs, it is sufficient to change only the reference currents of two current sources. The truth tables for two cases and their results of computer simulation are given. The proposed RS-flip-flop is recommended for use in automation devices and digital technologies in the energy sector, which will increase the speed of information processing systems for measuring the temperature of GTE gases and create a current element base of computing devices operating on the principles of linear algebra. © 2020 IEEE.

关键词： Boolean algebra

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Multi-Functional Programmable Active RC-Filters with Digital Elements for Parameter Resetting

Multi-Functional Programmable Active RC-Filters with Digital...

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2020 IEEE International Conference on Electrical engineering and Photonics, EExPolytech 2020

作者： Denisenko, Darya Prokopenko, Nikolay Butyrlagin, Nikolay Vikulina, Elena Don State Technical University South Russian University Information Systems and Radio Engineering Rostov-on-Don Russia Don State Technical University Institute for Design Problems in Microelectronics of Russian Academy of Sciences Rostov-on-Don Information Systems and Radio Engineering Zelenograd Russia South Russian University Department of Systems Automation Control Rostov-on-Don Russia

ISBN: (纸本)9781728188782

Two promising modifications of the multi-functional programmable active filters (PAF) are developed and investigated. The proposed PAF circuits of second order are implemented on the operational amplifiers and have an increased stability of the Q-factor. The basic equations and the results of computer simulation are presented, showing that the developed circuits implement band-pass filters (BPF), low-pass filters (LPF) and high-pass filters (HPF). New modifications of the PAFs allow resetting of the pole frequency using resistor arrays R-2R or digital potentiometer microcircuits. A comparison of the main characteristics of the proposed PAF and the PAF based on famous KHN filters is given. © 2020 IEEE.

关键词： Low pass filters

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Semi-vortex solitons and their excited states in spin-orbit-coupled binary bosonic condensates

arXiv

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arXiv 2024年

作者： Deng, Haiming Li, Jinqing Chen, Zhaopin Liu, Yaohui Liu, Dong Jiang, Chunzhi Kong, Chao Malomed, Boris A. School of Physics and Electronic-Electrical Engineering Xiangnan University Chenzhou423000 China Microelectronics and Optoelectronics Technology Key Laboratory of Hunan Higher Education Xiangnan University Chenzhou423000 China Hunan Engineering Research Center of Advanced Embedded Computing and Intelligent Medical Systems Xiangnan University Chenzhou423000 China Physics Department Solid-State Institute Technion Haifa32000 Israel Department of Physical Electronics School of Electrical Engineering Faculty of Engineering Tel Aviv University Tel Aviv69978 Israel Instituto de Alta Investigación Universidad de Tarapacá Casilla 7D Arica Chile

It is known that two-dimensional two-component fundamental solitons of the semi-vortex (SV) type, with vorticities (s+, s−) = (0, 1) in their components, are stable ground states (GSs) in the spin-orbit-coupled (SOC) binary Bose-Einstein condensate with the contact self-attraction acting in both components, in spite of the possibility of the critical collapse in the system. However, excited states (ESs) of the SV solitons, with the vorticity set (s+, s−) = (S+, S+ + 1) and S+ = 1, 2, 3, ..., are unstable in the same system. We construct ESs of SV solitons in the SOC system with opposite signs of the self-interaction in the two components. The main finding is stability of the ES-SV solitons, with the extra vorticity (at least) up to S+ = 6. The threshold value of the norm for the onset of the critical collapse, Nthr, in these excited states is higher than the commonly known critical value, Nc ≈ 5.85, associated with the single-component Townes solitons, Nthr increasing with the growth of S+. A velocity interval for stable motion of the GS-SV solitons is found too. The results suggest a solution for the challenging problem of the creation of stable vortex solitons with high topological charges. Copyright © 2024, The Authors. All rights reserved.

关键词： Excited states

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Heterojunction Interface engineering Enabling High Transmittance and Record Efficiency in Sb2s3 Semitransparent Solar Cell

SSRN

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SSRN 2024年

作者： Ishaq, Muhammad Li, Xuerui Mehmood, Safdar Zhong, Yi-Ming Adil, Mansoor Shah, Usman Ali Chen, Shuo Chen, Yuexing Zheng, Zhuanghao Liang, Guangxing Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration College of Physics and Optoelectronic Engineering Shenzhen University Guangdong Shenzhen518060 China Institute of microelectronics of Chinese academy of sciences Beijing100029 China Department of Physics and Astronomy University of Florence via Giovanni Sansone 1 Sesto Fiorentio FI 50019 Italy

Antimony sulfide (Sb2S3) is an auspicious contender for semitransparent and tandem solar cells owing to its exceptional optoelectronic characteristics. Yet, complex bulk and heterojunction defects hinder achieving optimal power conversion efficiency (PCE). Although CdS is an established electron transport layer (ETL) in Sb-chalcogenide solar cells benefitting from its exceptional electron mobility (350 cm2V–1s–1) and energy level alignments, its potential contribution has been deplorably overlooked in Sb2S3 semitransparent photovoltaics (STPV). Herein, an optimized TiO2/CdS double ETL strategy is embraced to counteract CdS absorption loss and mitigate the "deep cliff" conduction band off-set at TiO2/Sb2S3 heterojunction. Subsequently, an evolved chemical bath deposition strategy is proposed to deposit a uniform, faster, and comparatively more transparent Sb2S3 absorber layer. A systematic investigation of the absorber layer and in-depth analysis of carrier dynamics at heterojunctions advocate for the mitigation of charge accumulation and recombination at the interface, thereby pledging superior carrier transport. The advantageous gradient energy band alignment of TiO2/CdS/Sb2S3 realized a record PCE of 5.61% for STPV. Furthermore, the semitransparent device is innovatively employed as a window, enabling transmitted light to be harvested by subsequent Sb2S3 solar cells. It maintains 18% of its standalone PCE, thereby setting new benchmarks for its practical submissions. © 2024, The Authors. All rights reserved.

关键词： Heterojunctions

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SDOA-Net: An Efficient Deep Learning-Based DOA Estimation Network for Imperfect Array

arXiv

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arXiv 2022年

作者： Chen, Peng Chen, Zhimin Liu, Liang Chen, Yun Wang, Xianbin State Key Laboratory of Millimeter Waves Southeast University Nanjing210096 China State Key Laboratory of Integrated Chips and Systems Fudan University Shanghai201203 China School of Electronic and Information Shanghai Dianji University Shanghai201306 China Department of Electronic and Information Engineering The Hong Kong Polytechnic University Hong Kong State Key Laboratory of Integrated Chips and Systems Microelectronics School Fudan University Shanghai201203 China Department of Electrical and Computer Engineering Western University LondonONN6A 5B9 Canada

The estimation of direction of arrival (DOA) is a crucial issue in conventional radar, wireless communication, and integrated sensing and communication (ISAC) systems. However, low-cost systems often suffer from imperfect factors, such as antenna position perturbations, mutual coupling effect, inconsistent gains/phases, and non-linear amplifier effect, which can significantly degrade the performance of DOA estimation. This paper proposes a DOA estimation method named superresolution DOA network (SDOA-Net) based on deep learning (DL) to characterize the realistic array more accurately. Unlike existing DL-based DOA methods, SDOA-Net uses sampled received signals instead of covariance matrices as input to extract data features. Furthermore, SDOA-Net produces a vector that is independent of the DOA of the targets but can be used to estimate their spatial spectrum. Consequently, the same training network can be applied to any number of targets, reducing the complexity of implementation. The proposed SDOA-Net with a low-dimension network structure also converges faster than existing DL-based methods. The simulation results demonstrate that SDOA-Net outperforms existing DOA estimation methods for imperfect arrays. The SDOA-Net code is available online at https://***/chenpengseu/***. Copyright © 2022, The Authors. All rights reserved.

关键词： Direction of arrival

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Port and Radiation Pattern Decoupled Microstrip Antennas Using Shorting Vias

Port and Radiation Pattern Decoupled Microstrip Antennas Usi...

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Cross Strait Quad-Regional Radio Science and Wireless Technology Conference (CSRWTC)

作者： Guang Yao Liu Nan Yang Kwok Wa Leung Department of Electrical Engineering State Key Laboratory of Terahertz and Millimeter Waves City University of Hong Kong Kowloon Hong Kong SAR China Information and Communication Technology Centre CityU Shenzhen Research Institute Shenzhen China School of Electronics and Information Technology (School of Microelectronics) Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems Sun Yat-sen University Guangzhou China

In this paper, a microstrip antenna array using shorting vias is presented with port and radiation pattern decoupling. Shorting vias on the passive patch introduce an opposite current component, canceling the original coupling currents and obtaining the decoupling of antenna elements. To verify the decoupling method, a sample is designed at 3.6 GHz. The measured port isolation of the decoupled antenna array is more than 25.7 dB. It should be highlighted that the radiation patterns of decoupled antenna elements are all along the broadside direction, defined as the radiation pattern decoupling effect.

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Advances in the Application of Perovskite Materials

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Nano-Micro Letters 2023年第10期15卷 334-381页

作者： Lixiu Zhang Luyao Mei Kaiyang Wang Yinhua Lv Shuai Zhang Yaxiao Lian Xiaoke Liu Zhiwei Ma Guanjun Xiao Qiang Liu Shuaibo Zhai Shengli Zhang Gengling Liu Ligang Yuan Bingbing Guo Ziming Chen Keyu Wei Aqiang Liu Shizhong Yue Guangda Niu Xiyan Pan Jie Sun Yong Hua Wu‑Qiang Wu Dawei Di Baodan Zhao Jianjun Tian Zhijie Wang Yang Yang Liang Chu Mingjian Yuan Haibo Zeng Hin‑Lap Yip Keyou Yan Wentao Xu Lu Zhu Wenhua Zhang Guichuan Xing Feng Gao Liming Ding Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190People’s Republic of China University of Chinese Academy of Sciences Beijing 100049People’s Republic of China Department of Physics Link.ping University58183 Link.pingSweden Institute of Applied Physics and Materials Engineering University of MacaoMacao 999078People’s Republic of China School of Materials Science and Engineering Yunnan UniversityKunming 650091People’s Republic of China School of Microelectronics Science and Technology Sun Yat-sen UniversityZhuhai 519082People’s Republic of China College of Electronic Information and Optical Engineering Nankai UniversityTianjin 300350People’s Republic of China Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of TechnologyShenzhen 518055People’s Republic of China School of Materials Science and Engineering Nanjing University of Science and TechnologyNanjing 210094People’s Republic of China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027People’s Republic of China State Key Laboratory of Superhard Materials Jilin UniversityChangchun 130012People’s Republic of China College of Electronic and Optical Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023People’s Republic of China School of Chemistry Sun Yat-sen UniversityGuangzhou 510006People’s Republic of China School of Environment and Energy South China University of TechnologyGuangzhou 510000People’s Republic of China Department of Chemistry Imperial College LondonLondon W120BZUK College of Chemistry Nankai UniversityTianjin 300071People’s Republic of China Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083People’s Republic of China Institute of Semiconductors Chinese Academy of SciencesBeijing 100083People’s Republic of China School

Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices(solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices(artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.

关键词： Perovskites Optoelectronic devices Neuromorphic devices Pressure-induced emission

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Active RC LPFs with single-element pole frequency tuning 11

Active RC LPFs with single-element pole frequency tuning

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11th National Conference with International Participation, ELECTRONICA 2020

作者： Denisenko, Darya Yurievna Prokopenko, Nikolay Nikolaevich Butyrlagin, Nikolav Vladimirovich Don State Technical University Department of Information Systems and Radio Engineering Rostov-on-Don344006 Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Zelenograd124681 Russia Institute for Design Problems in Microelectronics of Russian Academy of Sciences Sovetskaya St. 3 Zelenograd124681 Russia

ISBN: (纸本)9781728175317

New low-pass filter (LPF) architectures based on differential difference operational amplifiers (DDOA) are studied in this paper. The feature of the proposed LPF is that when tuning the cut-off frequency, the LPF gain remains unchanged at zero frequency. As a tuning element, it is possible to use digital potentiometers. The basic equations for two LPF modifications are presented, which provide parametric synthesis of circuits. The results of computer simulation of tunable responses were given in Micro-cap CAD. © 2020 IEEE.

关键词： Operational amplifiers

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A DFT Model Study about Structure Sensitivity for Benzotriazole Adsorption on Copper Surfaces and Nano Cluster 21

A DFT Model Study about Structure Sensitivity for Benzotriaz...

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21st International Conference on Electronic Packaging Technology, ICEPT 2020

作者： Zhang, Weihong Zhou, Quan Tang, Honghao Liu, Xu Ye, Huaiyu Koh, Sau Wee Zhang, Guoqi Shenzhen Institute of Wide-bandgap Semiconductors Shenzhen China Chongqing University Key Laboratory of Optoelectronic of China College of Optoelectronic Engineering Technology Systems Education Ministry Shenzhen China Ministry of Education Southern University of Science and Technology Shenzhen Institute of Wide-bandgap Semiconductors School of Microelectronics Engineering Research Center of Integrated Circuits for Next-Generation Communications Shenzhen China Delft University of Technology Department of Microelectronics Shenzhen China Huawei Technology Shenzhen China

ISBN: (纸本)9781728168265

As an outstanding corrosion inhibitor for copper, the adsorption behavior of benzotriazole on copper nano cluster has been investigated and compared with copper (111), (100) and (110) surfaces by means of density functional theory (DFT) calculations. Calculations reveal that benzotriazole has chemical adsorption on different copper surfaces and copper nano cluster when its N2-N3 bond is placed down on them. Also, the adsorption energy and closest interatomic distance show strong dependence on the surface structure, which indicates its ability to passivate the reactive under-coordinated surface sites. Relatively strong chemical bond between the copper cluster and the adsorbate is found to form. The chemisorption mechanism and the local structure of benzotriazole on copper surfaces and nano cluster are also discussed and presented. © 2020 IEEE.

关键词： Density functional theory

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Plasmon hybridization induced by quasi bound state in the continuum of graphene metasurfaces oriented for high-accuracy polarization-insensitive two-dimensional sensors

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Chinese Optics Letters 2022年第4期20卷 65-70页

作者： Xiuyu Wang Jihong Xin Qun Ren Haocheng Cai Jiaqi Han Chengyi Tian Pengcheng Zhang Lijie Jiang Zhihao Lan Jianwei You Wei E.I.Sha Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of MicroelectronicsTianjin UniversityTianjin 300072China School of Electrical and Information Engineering Tianjin UniversityTianjin 300072China State Key Laboratory of Millimeter Waves School of Information Science and EngineeringSoutheast UniversityNanjing 210096China Key Laboratory of High Speed Circuit Design and EMC of Ministry of Education School of Electronic EngineeringXidian UniversityXi'an 710071China Huawei Technologies Company Ltd. Shanghai 518129China Department of Electronic and Electrical Engineering University College LondonLondon WC1E7JEUK Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou 310027China

Plasmonics could provide compact and powerful solutions for manipulating light in deep-subwavelength dimensions,which is promising for a great range of nanophotonic technologies such as plasmonic rulers and ***,the effective area of enhanced localized field induced by surface plasmon polaritons is typically restricted to the structural *** this work,we propose a method to generate high quality-factor extended electromagnetic fields via hybridizing the superradiant state and the quasi bound state in the continuum of graphene *** coupling interaction involved operates as a three-level system with multiple sharp resonances immune to the polarization,which holds great promise for developing nanodevices with high sensing capacity in two dimensions.

关键词： plasmon hybridization quasi bound state in the continuum high-Q sensing

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