检索结果-内蒙古大学图书馆

Advancing water collection efficiency in hybrid solar evaporators: key factors, strategic innovations, and synergistic applications

引用

Materials Science and engineering: R: Reports 2025年 165卷

作者： Muhammad Sultan Irshad Naila Arshad Ghazala Maqsood Iftikhar Ahmed Bushra Shakoor Muhammad Sohail Asghar Uzma Ghazanfar Liangyou Lin M.A.K. Yousaf Shah Irshad Ahmed Xia Chen Jianying Wang Chen Yi Jinhua Li Jingwen Qian Wenlu Li Zafar Said Hongrong Li Nang Xuan Ho Hao Wang Xianbao Wang Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials Collaborative Innovation Center for Advanced Organic Chemical Materials Co-constructed by the Province and Ministry School of New Energy and Electrical Engineering Hubei University Wuhan 430062 China College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China Environmental and Public Health Department College of Health Sciences Abu Dhabi University P.O. Box 59911 Abu Dhabi United Arab Emirates Department of Physics University of Wah Wah Cantt 47040 Pakistan Department of Chemistry and Chemical Engineering SBA School of Science and Engineering (SSE) Lahore University of Management Sciences (LUMS) Lahore Cantt 54792 Pakistan Institute of Microelectronics and Integrated Circuits School of Microelectronics Hubei University Wuhan Hubei 430062 China Mechanical and Aerospace Engineering Department College of Engineering United Arab Emirates University Al Ain 15551 United Arab Emirates School of Physics Xi'an Jiaotong University Xi'an 710049 China Faculty of Vehicle and Energy Engineering PHENIKAA School of Engineering PHENIKAA University Hanoi Vietnam State Key Laboratory of Radio Frequency Heterogeneous Integration College of Mechatronics and Control Engineering Shenzhen University Shenzhen 518060 China

Solar-driven interfacial evaporation (SDIE) technique is a sustainable approach that utilizes solar energy to produce steam, thus addressing freshwater scarcity. Despite several earlier research investigations, claims beyond the theoretical limit were raised due to limitations in solar-to-vapor and condensate efficiency, which remain under debate. Even under superlative conditions, low condensate and energy losses persist, indicating that the system's efficiency will never reach > 100 %. This review primarily analyzes the theoretical values of evaporation rate, structural configurations, strategic approaches, and physical factors influencing condensate yields in the SDIE process. Using a theoretical energy distribution framework, this study identifies mechanisms driving conversion efficiency and condensate rate beyond equilibrium predictions, e.g., phase change process, and vapor-liquid equilibrium. Low water collection efficiency in condensation systems, driven by poor thermal management and inadequate surface designs, demands interfacial engineering strategies such as hydrophobic/hydrophilic coatings to enhance latent heat recovery and condensate yields, as briefly examined in this review. It emphasizes misconceptions about efficiencies beyond theoretical limits, purification challenges, and complementary applications while guiding researchers to provide plausible explanations for breakthroughs under specific and established reference conditions.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Topologically Protected Entanglement Emitters

Topologically Protected Entanglement Emitters

引用

Conference on Lasers and Electro-Optics (CLEO)

作者： Tianxiang Dai Yutian Ao Jueming Bao Jun Mao Yulin Chi Zhaorong Fu Yilong You Xiaojiong Chen Chonghao Zhai Bo Tang Yan Yang Zhihua Li Luqi Yuan Fei Gao Xiao Lin Mark G. Thompson Jeremy L. O’Brien Yan Li Xiaoyong Hu Qihuang Gong Jianwei Wang State Key Laboratory for Mesoscopic Physics School of Physics Peking University Beijing China Institute of Microelectronics Chinese Academy of Sciences Beijing China State Key Laboratory of Advanced Optical Communication Systems and Networks School of Physics and Astronomy Shanghai Jiao Tong University Shanghai China Interdisciplinary Center for Quantum Information State Key Laboratory of Modern Optical Instrumentation ZJU-Hangzhou Global Science and Technology Innovation Center College of Information Science and Electronic Engineering Zhejiang University Hangzhou China Department of Electrical and Electronic Engineering Quantum Engineering Technology Labs H. H. Wills Physics Laboratory University of Bristol Bristol United Kingdom Department of Physics The University of Western Australia Perth Australia Frontiers Science Center for Nano-Optoelectronics & Collaborative Innovation Center of Quantum Matter Peking University Beijing China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi China Yangtze Delta Institute of Optoelectronics Peking University Nantong Jiangsu China

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

We report topologically-protected entanglement emitters, that emit topological Einstein-Podolsky-Rosen state and multiphoton entangled state from a plug-and-play silicon-photonic chip in ambient conditions. The device emulating a photonic anomalous Floquet insulator allows the generation of four-photon topological entangled states at nontrivial edge modes.

关键词： Quantum entanglement Laser modes Insulators Electrooptical waveguides Photonics

来源：评论

学校读者我要写书评

暂无评论

Room-temperature waveguide integrated quantum register in a semiconductor photonic platform

arXiv

引用

arXiv 2023年

作者： Hu, Haibo Zhou, Yu Yi, Ailun Bao, Tongyuan Liu, Chengying Luo, Qi Zhang, Yao Wang, Zi Li, Qiang Lu, Dawei Liu, Zhengtong Xiao, Shumin Ou, Xin Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518055 China Shenzhen518045 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China State Key Laboratory of Silicon Materials and Advanced Semiconductors School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Shenzhen Institute for Quantum Science and Engineering Department of Physics Southern University of Science and Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

Quantum photonic integrated circuits are reshaping quantum networks and sensing by providing compact, efficient platforms for practical quantum applications. Despite continuous breakthroughs, integrating entangled registers into photonic devices on a CMOS-compatible platform presents significant challenges. Herein, we present single electron-nuclear spin entanglement and its integration into a silicon-carbide-on-insulator (SiCOI) waveguide. We demonstrate the successful generation of single divacancy electron spins and near-unity spin initialization of single 13C nuclear spins. Both single nuclear and electron spin can be coherently controlled and a maximally entangled state with a fidelity of 0.89 has been prepared under ambient conditions. Based on the nanoscale positioning techniques, the entangled quantum register has been further integrated into SiC photonic waveguides for the first time. We find that the intrinsic optical and spin characteristics of the register are well preserved and the fidelity of the entangled state remains as high as 0.88. Our findings highlight the promising prospects of the SiCOI platform as a compelling candidate for future scalable quantum photonic applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Silicon on insulator technology

来源：评论

学校读者我要写书评

暂无评论

112 Gb s−1Germanium Photodetector at 2 µm Enabled by a 3D Integrated Waveguide Loop (Adv. Mater. Technol. 11/2025)

引用

Advanced Materials Technologies 2025年第11期10卷

作者： Jianing Wang Xuelin Zhang Yihang Li Xi Wang Shumin Xiao Qinghai Song Zuyuan He Jiangbing Du Hon Ki Tsang Ke Xu Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen 518055 P. R. China Department of Integrated Circuits Harbin Institute of Technology Shenzhen 518055 P. R. China State Key Laboratory of Advanced Optical Communication Systems and Networks Shanghai Jiao Tong University Shanghai 200240 P. R. China Peng Cheng Laboratory Shenzhen 518055 P. R. China Department of Electronic Engineering The Chinese University of Hong Kong Hong Kong 999077 P. R. China

来源：评论

学校读者我要写书评

暂无评论

Tuning the competition between superconductivity and charge order in the kagome superconductor Cs(V1−xNbx)3Sb5

引用

Physical Review B 2022年第18期105卷 L180507-L180507页

作者： Yongkai Li Qing Li Xinwei Fan Jinjin Liu Qi Feng Min Liu Chunlei Wang Jia-Xin Yin Junxi Duan Xiang Li Zhiwei Wang Hai-Hu Wen Yugui Yao Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) School of Physics Beijing Institute of Technology Beijing 100081 People's Republic of China Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems Beijing Institute of Technology Beijing 100081 People's Republic of China Material Science Center Yangtze Delta Region Academy of Beijing Institute of Technology Jiaxing 314011 People's Republic of China National Laboratory of Solid State Microstructures and Department of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 People's Republic of China Key Laboratory of Microelectronics and Energy of Henan Province School of Physics and Electronic Engineering Xinyang Normal University Xinyang 464000 People's Republic of China Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7) Department of Physics Princeton University Princeton New Jersey 08544 USA

The recently discovered coexistence of superconductivity and charge-density wave order in the kagome systems AV3Sb5 (A=K, Rb, Cs) has stimulated enormous interest. It is predicted that a vanadium-based kagome system may host a flat band, nontrivial linear dispersive Dirac surface states, and electronic correlation. Although much research has been carried out, the origin of the charge-density wave (CDW) order, the relationship between the superconductivity and the CDW, and whether the anomalous Hall effect (AHE) arises primarily from the kagome lattice or the CDW order, remain controversial. Here, we report an extensive investigation of Cs(V1−xNbx)3Sb5 samples with systematic Nb doping. Our results show that the Nb doping induces apparent suppression of CDW order and promotes superconductivity; meanwhile, the AHE and magnetoresistance (MR) are weakened significantly together with the CDW order. Combining with density-functional calculations, we interpret these effects by an antiphase shift of the Fermi energy with respect to the saddle points near M and the Fermi surface centered around Γ. It is found that the former depletes the filled states for the CDW instability and worsens the nesting condition for CDW order, while the latter lifts the Fermi level upward and enlarges the Fermi surface surrounding the Γ point, and thus promotes superconductivity. Our results uncover a delicate but unusual competition between the CDW order and superconductivity.

关键词： Charge density waves Superconductivity Single crystal materials Strongly correlated systems Superconductors Topological materials Unconventional superconductors Crystal growth Crystal structures Density functional theory Resistivity measurements Susceptibility measurements X-ray diffraction

来源：评论

学校读者我要写书评

暂无评论

Multiscale Attention Guided Network for COVID-19 Diagnosis Using Chest X-ray Images

arXiv

引用

arXiv 2020年

作者： Li, Jingxiong Wang, Yaqi Wang, Shuai Wang, Jun Liu, Jun Jin, Qun Sun, Lingling Key Lab of RF Circuits and Systems of Ministry of Education Microelectronics CAD Center Hangzhou Dianzi University Hangzhou310018 China Communication University of Zhejiang Hangzhou China Department of Radiology BRIC University of North Carolina at Chapel Hill Chapel HillNC27599 United States School of Biomedical Engineering Shanghai Jiao Tong University Shanghai200240 China

Coronavirus disease 2019 (COVID-19) is one of the most destructive pandemic after millennium, forcing the world to tackle a health crisis. Automated classification of lung infections from chest X-ray (CXR) images strengthened traditional healthcare strategy to handle COVID-19. However, classifying COVID-19 from pneumonia cases using CXR image is challenging because of shared spatial characteristics, high feature variation in infections and contrast diversity between cases. Moreover, massive data collection is impractical for a newly emerged disease, which limited the performance of common deep learning models. To address this challenging topic, Multiscale Attention Guided deep network with Soft Distance regularization (MAG-SD) is proposed to automatically classify COVID-19 from pneumonia CXR images. In MAG-SD, MA-Net is used to produce prediction vector and attention map from multiscale feature maps. To relieve the shortage of training data, attention guided augmentations along with a soft distance regularization are posed, which requires a few labeled data to generate meaningful augmentations and reduce noise. Our multiscale attention model achieves better classification performance on our pneumonia CXR image dataset. Plentiful experiments are proposed for MAG-SD which demonstrates that it has its unique advantage in pneumonia classification over cutting-edge models. The code is available at https://***/ JasonLeeGHub/MAG-SD. Copyright © 2020, The Authors. All rights reserved.

关键词： Coronavirus

来源：评论

学校读者我要写书评

暂无评论

Erratum to “A Nonlinear Receiver Leveraging Cascaded Inverter-Based Envelope-Biased LNAs for In-Band Interference Suppression in the Amplitude Domain” [Nov 21 3360-3374]

引用

IEEE Journal of Solid-state circuits 2022年第2期57卷 671-671页

作者： Dawei Ye Rongjin Xu C.-J. Richard Shi State Key Laboratory of ASIC and System Fudan University Shanghai China Institute of Brain-Inspired Circuits and Systems (iBiCAS) Fudan University Shanghai China MOE Frontiers Center for Brain Science Fudan University Shanghai China Department of Electrical and Computer Engineering University of Washington Seattle WA USA

In the above article [1] , Fig. 4 is wrong. The correct one is shown below:

关键词： Interference suppression Internet of Things CMOS analog integrated circuits Low-noise amplifiers

来源：评论

学校读者我要写书评

暂无评论

Seed-assisted growth of large-area β'-In2Se3 ferroelectric thin films

引用

Microelectronic engineering 2025年 299卷

作者： Zou, Lingrui Feng, Pu Jing, Peipei Dang, Chaoqun Zhu, Haiming He, Xin Zhang, Lijie Wang, Tao Xue, Fei Key Laboratory of Carbon Materials of Zhejiang Province College of Chemistry and Materials Engineering Wenzhou University Zhejiang Wenzhou325035 China Center for Quantum Matter School of Physics Zhejiang University Hangzhou310058 China ZJU-Hangzhou Global Scientific and Technological Innovation Center College of Integrated Circuits Zhejiang University Hangzhou311215 China State Key Laboratory of Fluid Power and Mechatronic Systems School of Mechanical Engineering Center for X-Mechanics Zhejiang Key Laboratory of Atomic Level Manufacturing ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou311215 China Department of Chemistry State Key Laboratory of Extreme Photonics and Instrumentation Zhejiang Key Laboratory of Excited State Energy Conversion and Storage Zhejiang University Hangzhou China

The recent discovery of two-dimensional ferroelectric semiconductors, such as In2Se3, has opened promising avenues for ultra-thin micro-nano electronic devices, and energy-efficient neuromorphic systems. Despite these exciting prospects, achieving large-area, high-quality, layer-controlled growth of single-phase In2Se3 remains a considerable challenge. In this study, we present a seed-assisted strategy for growing uniform, centimeter-scale β'-In2Se3 thin films by mixing In2O3 and In2Se3 single crystals in a specific ratio. The resulting β'-In2Se3 phase and composition are verified through X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Furthermore, the ferroelectric properties and domain configurations have been characterized by using polarized light microscopy and piezoresponse force microscopy. Importantly, we investigate the topological evolution of ferroelectric domains across films with varying thicknesses, revealing insights into domain structure modulation. This growth method not only provides a scalable route for synthesizing similar ferroelectric two-dimensional materials but also a possibility for the practical integration of β'-In2Se3 in optoelectronic, neuromorphic, and other advanced micro-nano electronic applications. © 2025

关键词： Ferroelectric thin films

来源：评论

学校读者我要写书评

暂无评论

High Conductance Margin for Efficient Neuromorphic Computing Enabled by Stacking Nonvolatile van der Waals Transistors

引用

Physical Review Applied 2021年第4期16卷 044049-044049页

作者： Liping Xu (徐丽萍) Hao Xiong (熊浩) Zhichao Fu (付志超) Menghan Deng (邓梦晗) Shuiyuan Wang (王水源) Jinzhong Zhang (张金中) Liyan Shang (商丽燕) Kai Jiang (姜凯) Yawei Li (李亚巍) Liangqing Zhu (朱亮清) Liang He Zhigao Hu (胡志高) Junhao Chu (褚君浩) Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai) Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education) Department of Materials School of Physics and Electronic Science East China Normal University Shanghai 200241 China Center for Advanced Electronic Materials and Devices School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai 200240 China School of Computer Science and Technology East China Normal University Shanghai 200062 China ASIC & System State Key Laboratory School of Microelectronics Fudan University Shanghai 200433 China Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan Shanxi 030006 China Shanghai Institute of Intelligent Electronics & Systems Fudan University Shanghai 200433 China

High-performance artificial synaptic devices are key building blocks for developing efficient neuromorphic computing systems. However, the nonlinear and asymmetric weight update of existing devices has restricted their practical applications. Herein, floating gate nonvolatile memory (FG NVM) devices based on two-dimensional (2D) HfS2/h-BN/FG-graphene heterostructures have been designed and investigated as multifunctional NVM and artificial optoelectronic synapses. Benefiting from the FG architecture, the HfS2-based NVM device exhibits competitive performances, such as a high on:off ratio (>105), large memory window (approximately 100 V), excellent charge retention ability (>104s), and robust durability (>103 cycles). Notably, the artificial optoelectronic synapses based on HfS2 FG NVM show an impressive large conductance margin and good linearity, owing to the ultrahigh photoresponsivity and photogain of HfS2. The energy consumption of per spike in our artificial synapse is as low as 0.2 pJ. Therefore, a high recognition accuracy up to 91.5% of the artificial neural network on the basis of our HfS2-based optoelectronic synapse at the system level has been achieved, which is superior to other reported 2D artificial optoelectronic synapses. This work paves the way forward for all 2D material-based memory for developing efficient optogenetics-inspired neuromorphic computing in brain-inspired intelligent systems.

关键词： Electrical conductivity Optoelectronics Synapses 2-dimensional systems Artificial neural networks Transistors Transition metal dichalcogenides Lithography

来源：评论

学校读者我要写书评

暂无评论

P-1.16: Frontend Amplifier with Unipolar Oxide TFTs for Heart Rate Measurement

引用

SID Symposium Digest of Technical Papers 2022年第S1期53卷

作者： Yuming Xu Bin Li Sunbin Deng Wei Zhong Xuemei Yin Zhaohui Wu Hoi-Sing Kowk Rongsheng Chen School of Microelectronics South China University of Technology Guangzhou 510640 China State Key Laboratory on Advanced Displays and Optoelectronics Technologies Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong Purdue University West Lafayette IN U.S.A. School of integrated circuits Guangdong University of Technology Guangzhou China School of artificial intelligence Zhuhai City Polytechnic College Zhuhai China

This paper presents a frontend amplifier based on the n-type only indium-tin-oxide (ITO)-stabilized ZnO thin film transistors (TFTs) on glass substrate. The amplifier has an external-bias AC-coupled, open-loop capacitor bootstrap structure. The area and power consumption are 41 mm 2 and 0.1 mW (8V), respectively. Measurement results show a gain of 20 dB, a bandwidth of 3 Hz–6 kHz, a common mode rejection ratio (CMRR) up to 42 dB, an input impedance of 100 MΩ, and an input-referred noise of 106 μVrms (integrated from 1 Hz–200 Hz). The noise efficiency factor (NEF) and power efficiency factor (PEF) of the amplifier are respectively 248 and 4.9×10 5 . The amplifier is successfully used to measure the heart-rate signal.

关键词： Frontend amplifier metal-oxide thin film transistors heart-rate measurement

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：