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IEEE International Conference on Communications

作者： Ye Liu Hao Liu Qing Yang Shaoen Wu National ASIC System Engineering Research Center Southeast University Suzhou Key Lab of Integrated Circuits & Systems Southeast University Department of Computer Science Montana State University Department of Computer Science Ball State University

ISBN: (纸本)9781467364300

Multi-channel media access control (MAC) is important in wireless sensor networks because it allows parallel data transmissions and resists external wireless interference. Existing multi-channel MAC protocols, however, do not efficiently support delay-sensitive applications that require reliable and timely data transmissions. In addition, multi-channel operation is inherently deficient for supporting multi-hop broadcasting, due to independent waking-up schedules on sensors. To address these issues, we present a routing-enhanced multi-channel MAC (RM-MAC) which allows nodes to coordinately select their channel polling times based on cross-layer routing information. RM-MAC also supports a ripple broadcast mechanism which achieves efficient multi-hop broadcast among sensors. Simulation results show that RM-MAC provides significant improvement over the MuCHMAC [1], in terms of end-to-end delay, under a wide range of traffic loads including both unicast and broadcast traffic.

关键词： Protocols Wireless sensor networks Interference

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Review Article: Recommended reading list of early publications on atomic layer deposition - Outcome of the "virtual Project on the History of ALD"

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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 2017年第1期35卷

作者： Ahvenniemi, Esko Akbashev, Andrew R. Ali, Saima Bechelany, Mikhael Berdova, Maria Boyadjiev, Stefan Cameron, David C. Chen, Rong Chubarov, Mikhail Cremers, Veronique Devi, Anjana Drozd, Viktor Elnikova, Liliya Gottardi, Gloria Grigoras, Kestutis Hausmann, Dennis M. Hwang, Cheol Seong Jen, Shih-Hui Kallio, Tanja Kanervo, Jaana Khmelnitskiy, Ivan Kim, Do Han Klibanov, Lev Koshtyal, Yury Krause, A. Outi I. Kuhs, Jakob Kärkkänen, Irina Kääriäinen, Marja-Leena Kääriäinen, Tommi Lamagna, Luca Lapicki, Adam A. Leskelä, Markku Lipsanen, Harri Lyytinen, Jussi Malkov, Anatoly Malygin, Anatoly Mennad, Abdelkader Militzer, Christian Molarius, Jyrki Norek, Malgorzata Özgit-Akgün, Çaǧla Panov, Mikhail Pedersen, Henrik Piallat, Fabien Popov, Georgi Puurunen, Riikka L. Rampelberg, Geert Ras, Robin H. A. Rauwel, Erwan Roozeboom, Fred Sajavaara, Timo Salami, Hossein Savin, Hele Schneider, Nathanaelle Seidel, Thomas E. Sundqvist, Jonas Suyatin, Dmitry B. Törndahl, Tobias Van Ommen, J. Ruud Wiemer, Claudia Ylivaara, Oili M. E. Yurkevich, Oksana Department of Chemistry Aalto University P.O. Box 16100 EspooFI-00076 Finland Department of Materials Science and Engineering Stanford University StanfordCA94305 United States Department of Materials Science and Engineering Aalto University School of Chemical Technology P.O. Box 16200 AaltoFI-00076 Finland Institut Européen des Membranes IEM UMR-5635 Université de Montpellier ENSCM CNRS Place Eugène Bataillon Montpellier Cedex 5F-34095 France Industrial Focus Group XUV Optics University of Twente Enschede7522 ND Netherlands Institute of Solid State Physics Bulgarian Academy of Sciences 72 Tzarigradsko chaussee blvd. Sofia1784 Bulgaria CEPLANT Masaryk University Kotlářská 267/2 Brno611 37 Czech Republic School of Mechanical Science and Engineering School of Optical and Electronic Information Huazhong University of Science and Technology 1037 Luoyu Road Wuhan Hubei430074 China Univ. Grenoble Alpes CNRS SIMAP GrenobleF-38000 France Department of Solid State Sciences CoCooN Ghent University Krijgslaan 281/S1 Ghent9000 Belgium Inorganic Materials Chemistry Ruhr University Bochum Bochum44801 Germany Institute of Chemistry St.-Petersburg State University Universitetskaya emb. 7/9 St.-Petersburg199034 Russia Institute for Theoretical and Experimental Physics Bolshaya Cheremushkinskaya 25 Moscow117218 Russia Fondazione Bruno Kessler Center for Materials and Microsystems Trento38123 Italy VTTFI-02044 Finland Lam Research Corporation TualatinOR97062 United States Department of Materials Science and Engineering Inter-university Semiconductor Research Center College of Engineering Seoul National University Seoul08826 Korea Republic of Globalfoundries AlbanyNY12203 United States Department of Chemistry School of Chemical Engineering Aalto University P.O. Box 16100 AaltoFI-00076 Finland Åbo Akademi TurkuFI-20500 Finland Research and Education Center Nanotechnology Saint Petersburg Electrotechnical University LETI ul. Professora

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United states. Up to now, a balanced overview regarding the early history of ALD has been missing;the current list is an attempt to remedy this deficiency. © 2016 Author(s).

关键词： Atomic layer deposition

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25th Annual Computational Neuroscience Meeting CNS-2016, Seogwipo City, South Korea, July 2-7, 2016 Abstracts

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BMC NEUROSCIENCE 2016年第1期17卷 1-112页

作者： [Anonymous] Computational Neurobiology Laboratory The Salk Institute for Biological Studies San Diego USA UNIC CNRS Gif sur Yvette France The European Institute for Theoretical Neuroscience (EITN) Paris France ATR Computational Neuroscience Laboratories Kyoto Japan Krembil Research Institute University Health Network Toronto Canada Department of Physiology University of Toronto Toronto Canada Department of Medicine (Neurology) University of Toronto Toronto Canada Department of Physics University of New Hampshire Durham USA Department of Neurophysiology Nencki Institute of Experimental Biology Warsaw Poland Department of Theory Wigner Research Centre for Physics of the Hungarian Academy of Sciences Budapest Hungary Department of Mathematical Sciences KAIST Daejoen Republic of Korea Department of Mathematics University of Houston Houston USA Department of Biochemistry & Cell Biology and Institute of Biosciences and Bioengineering Rice University Houston USA Department of Biology and Biochemistry University of Houston Houston USA Grupo de Neurocomputación Biológica Dpto. de Ingeniería Informática Escuela Politécnica Superior Universidad Autónoma de Madrid Madrid Spain Department of Biological Sciences University of Southern California Los Angeles USA Center for Neuroscience Korea Institute of Science and Technology Seoul South Korea Department of Neurology Albert Einstein College of Medicine Bronx USA Center for Neuroscience KIST Seoul South Korea Department of Neuroscience University of Science and Technology Daejon South Korea Systems Neuroscience Group QIMR Berghofer Medical Research Institute Herston Australia Department of Psychology Yonsei University Seoul South Korea Department of Psychiatry Kyung Hee University Hospital at Gangdong Seoul South Korea Department of Psychiatry Veterans Administration Boston Healthcare System and Harvard Medical School Brockton USA Department of Electrical and Electronic Engineering The University of Melbourne Parkvil

A1 Functional advantages of cell-type heterogeneity in neural circuits Tatyana O. Sharpee A2 Mesoscopic modeling of propagating waves in visual cortex Alain Destexhe A3 Dynamics and biomarkers of mental disorders Mitsuo Kawato F1 Precise recruitment of spiking output at theta frequencies requires dendritic h-channels in multi-compartment models of oriens-lacunosum/moleculare hippocampal interneurons Vladislav Sekulić, Frances K. Skinner F2 Kernel methods in reconstruction of current sources from extracellular potentials for single cells and the whole brains Daniel K. Wójcik, Chaitanya Chintaluri, Dorottya Cserpán, Zoltán Somogyvári F3 The synchronized periods depend on intracellular transcriptional repression mechanisms in circadian clocks. Jae Kyoung Kim, Zachary P. Kilpatrick, Matthew R. Bennett, Kresimir Josić O1 Assessing irregularity and coordination of spiking-bursting rhythms in central pattern generators Irene Elices, David Arroyo, Rafael Levi, Francisco B. Rodriguez, Pablo Varona O2 Regulation of top-down processing by cortically-projecting parvalbumin positive neurons in basal forebrain Eunjin Hwang, Bowon Kim, Hio-Been Han, Tae Kim, James T. McKenna, Ritchie E. Brown, Robert W. McCarley, Jee Hyun Choi O3 Modeling auditory stream segregation, build-up and bistability James Rankin, Pamela Osborn Popp, John Rinzel O4 Strong competition between tonotopic neural ensembles explains pitch-related dynamics of auditory cortex evoked fields Alejandro Tabas, André Rupp, Emili Balaguer-Ballester O5 A simple model of retinal response to multi-electrode stimulation Matias I. Maturana, David B. Grayden, Shaun L. Cloherty, Tatiana Kameneva, Michael R. Ibbotson, Hamish Meffin O6 Noise correlations in V4 area correlate with behavioral performance in visual discrimination task Veronika Koren, Timm Lochmann, Valentin Dragoi, Klaus Obermayer O7 Input-location dependent gain modulation in cerebellar nucleus neurons Maria Psarrou, Maria Schilstra, Neil Davey, Benjamin Torben-Ni

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Resistance calibration method without external precision elements

Resistance calibration method without external precision ele...

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East-West Design & Test Symposium (EWDTS)

作者： Vazgen Melikyan Arthur Sahakyan Mikayel Piloyan Gagik Hovhannisyan Aram Shishmanyan Taron Hovhannisyan Davit Trdatyan Department of Microelectronics Circuits and Systems State Engineering University of Armenia Yerevan Armenia

A method of resistance calibration without external precision elements usage presented in paper. In the proposed method, used structures which operation based on technologically accurate elements and signals to have high accuracy resistance after calibration. Architecture produces a calibration code corresponding to 50Ohms PVT compensated termination impedance, which is needed to avoid reflections in transmission lines. Standard calibration methods using external ~1% accuracy precision discreet resistance (50 or 200Ohms). The presented calibration mechanism using internal elements and can provide ~ 4-7% accuracy of calibration. Method can be used in the special input/output circuits of several standards such as Peripheral Component Interconnect (PCI), Universal Serial Bus (USB), Double Data Rate (DDR) etc.

关键词： Calibration Resistance Accuracy Capacitors Resistors Receivers Reflection

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Self-calibration method for input/output termination resistance variation elimination

Self-calibration method for input/output termination resista...

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IEEE International Conference on Electronics and Nanotechnology (ELNANO)

作者： Sh. Melikyan Vazgen L. Aleksanyan Ani A. Galstyan Vache S. Harutyunyan Ani Department of Microelectronics Circuits and Systems State Engineering University of Armenia Yerevan Armenia Synopsys Armenia CJSC

A method of on-die resistance self-calibration for receiver and transmitter Input/Output devices, without external reference resistor is presented. Resistance mismatch elimination method, using reference clock and dc current is provided. The proposed method provides opportunity to measure the difference of the termination resistor and the transmission line impedance which is assumed 50-Ohm, detect the variation and minimizing it. A self-calibration technique for termination resistors mismatch elimination is implemented.

关键词： Resistance Resistors Binary codes Operational amplifiers Integrated circuits Reflection Switches

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Nanowire Transistors: Manipulating III–V Nanowire Transistor Performance via Surface Decoration of Metal‐Oxide Nanoparticles (Adv. Mater. Interfaces 12/2017)

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Advanced Materials Interfaces 2017年第12期4卷

作者： Fengyun Wang SenPo Yip Guofa Dong Fei Xiu Longfei Song Zaixing Yang Dapan Li Tak Fu Hung Ning Han Johnny C. Ho College of Physics and Cultivation Base for State Key Laboratory Qingdao University Qingdao 266071 P. R. China Department of Physics and Materials Science City University of Hong Kong 83 Tat Chee Avenue Kowloon Hong Kong State Key Laboratory of Millimeter Waves City University of Hong Kong 83 Tat Chee Avenue Kowloon Hong Kong Shenzhen Research Institute City University of Hong Kong Shenzhen 518057 P. R. China Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) Nanjing 211816 P. R. China School of Microelectronics and Center of Nanoelectronics Shandong University Jinan 250100 P. R. China State Key Laboratory of Multiphase Complex Systems Institute of Process Engineering Chinese Academy of Sciences Beijing 100190 P. R. China

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Scaling and operation characteristics of HfOx based vertical RRAM for 3D cross-point architecture

Scaling and operation characteristics of HfOx based vertical...

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2014 IEEE International Symposium on circuits and systems, ISCAS 2014

作者： Kang, J.F. Gao, B. Chen, B. Huang, P. Zhang, F.F. Liu, X.Y. Chen, H.-Y. Jiang, Z. Wong, H.-S. Philip Yu, Shimeng Institute of Microelectronics Peking University Beijing 100871 China Department of Electrical Engineering Stanford University Stanford CA 94305 United States School of Computing Informatics and Decision Systems Engineering Arizona State University AZ 85281 United States

ISBN: (纸本)9781479934324

Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit and the functionality along with a viable write/read scheme of the presented vertical RRAM are investigated. The experiments show that the pillar electrode thickness and the plane electrode thickness of the vertical RRAM can be scaled down to 3nm and 5nm without significant performance degradation, respectively. © 2014 IEEE.

关键词： Cost effectiveness

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Design guidelines for 3D RRAM cross-point architecture

Design guidelines for 3D RRAM cross-point architecture

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IEEE International Symposium on circuits and systems (ISCAS)

作者： Shimeng Yu Yexin Deng Bin Gao Peng Huang Bing Chen Xiaoyan Liu Jinfeng Kang Hong-Yu Chen Zizhen Jiang H.-S. Philip Wong School of Computing Informatics and Decision Systems Engineering Arizona State University Tempe AZ USA Instiitute of Microelectronics Peking University Beijing China Department of Electrical Engineering Stanford University CA USA

Design guidelines were proposed to evaluate and optimize the 3D RRAM cross-point architecture by a full-size 3D circuit simulation in SPICE. The performance metrics that were evaluated include the write/read margin, access latency, energy consumption per programming, and the density per bit. Different 3D cross-point architecture including the horizontally stacked or the vertically stacked structure were compared in terms of these metrics, revealing the advantages of the vertical RRAM structure. Then the scaling trend of the vertical RRAM based 3D array with respect to the scaling of lateral feature size, vertical electrode thickness and vertical isolation layer thickness were evaluated. The design parameters that affect the scaling trend include the metal interconnect resistance, RRAM on-state cell resistance (or the nonlinearity of the I-V). The design trade-offs are discussed considering those parameters constraints.

关键词： Three-dimensional displays Arrays Microprocessors Energy consumption Electrodes Delays

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Impact of pulse rise time on programming of cross-point RRAM arrays

Impact of pulse rise time on programming of cross-point RRAM...

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International Symposium on VLSI Technology, systems and Applications

作者： Rui Liu Hong-Yu Chen Haitong Li Peng Huang Liang Zhao Zhe Chen Feifei Zhang Bing Chen Lifeng Liu Xiaoyan Liu Bin Gao Shimeng Yu Yoshio Nishi H.-S. Philip Wong Jinfeng Kang Institute of Microelectronics Peking University Beijing China Peking University Beijing Beijing CN Center for Integrated Systems and Department of Electrical Engineering Stanford University Stanford CA USA Informatics and Decision Systems Engineering Arizona State University Tempe AZ USA

ISBN: (纸本)9781479922185

The role of pulse rise time during RRAM programming of cross-point arrays is investigated. The parasitic components in memory arrays is shown to result in distortion and degradation of the applied pulse on the memory cells (compared to the ideal/as-generated pulse), and will potentially cause programming failure. For the first time, the impact of pulse rising edge on the switching voltage is measured. The degradation and distortion of the applied pulse will result in programming failure when the pulse width becomes narrow. Thus, extra attention must be paid for large scale cross-point architecture in high-speed applications.

关键词： Switches Programming Degradation Pulse measurements Resistance Distortion measurement Electrical resistance measurement

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Write Disturb Analyses on Half-Selected Cells of Cross-Point RRAM Arrays

Write Disturb Analyses on Half-Selected Cells of Cross-Point...

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International Reliability Physics Symposium

作者： Haitong Li Hong-Yu Chen Zhe Chen Bing Chen Rui Liu Gang Qiu Peng Huang Feifei Zhang Zizhen Jiang Bin Gao Lifeng Liu Xiaoyan Liu Shimeng Yu H.-S. Philip Wong Jinfeng Kang Institute of Microelectronics Peking University Beijing 100871 China Center for Integrated Systems and Department of Electrical Engineering Stanford University Stanford CA 94305 USA School of Computing Informatics and Decision Systems Engineering Arizona State University Tempe AZ 85281 USA

ISBN: (纸本)9781479933181

Write disturb on half-selected (HS) cells is investigated through electrical measurements and large-scale array simulations. The experimental results collected from the individual devices under constant stress voltage and consecutive pulse operation are correlated with the HS cells in large-scale arrays based on a physics-based SPICE compact model. The impact of write/read disturb on the HS cells at different locations of the arrays is analyzed. Design guidelines for the optimized array size based on the experimental data and HSPICE simulations are presented: e.g., a 16 kb array can maintain its stored data pattern for 5×10~6 pulses and will have 164 false bits among half-selected cells after write disturb.

关键词： Resistive random access memory (RRAM) reliability write disturb cross-point failure

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