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2nd International Conference on Image, Vision and Computing, ICIVC 2017

作者： Yande, Xiang Jianyi, Meng Ma, De College of Information Science and Electronic Engineering Zhejiang University Hangzhou China State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai China MOE Key Laboratory of RF Circuits and Systems Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781509062379

Network-on-Chip (NoC) provides a scalable and packet-based inter-connected architecture for spiking neural networks (SNNs). However, existing neural mapping strategies just distribute all neurons in a population to an on-chip network core or nearby cores sequentially. The neurons within a population take a huge time cost for handling spikes, which results to uneven workload distribution among different on chip network nodes. This paper presents a NoC-based SNN mapping that makes workload balance among different nodes, aiming to accelerate application execution time. The experimental results show that proposed mapping strategy reduces application execution time by average 24%. © 2017 IEEE.

关键词： Network-on-chip

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InGaZnO-based photoelectric synaptic devices for neuromorphic computing

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Journal of Semiconductors 2024年第9期45卷 42-47页

作者： Jieru Song Jialin Meng Tianyu Wang Changjin Wan Hao Zhu Qingqing Sun David Wei Zhang Lin Chen School of Microelectronics State Key Laboratory of Integrated Chips and SystemsFudan UniversityShanghai 200433China School of Integrated Circuits Shandong UniversityJinan 250100China National Integrated Circuit Innovation Center Shanghai 201203China School of Electronic Science and Engineering Nanjing UniversityNanjing 210023China Jiashan Fudan Institute Jiashan 314102China

Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.

关键词： InGaZnO artificial synapse neuromorphic computing photoelectric memristor

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Overview of Existing systems for Automatic Control of Excitation of Synchronous Generators and Their Adaptation in the Conditions of Industrial Power Plants of Metallurgical Enterprises

Overview of Existing Systems for Automatic Control of Excita...

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2021 International Ural Conference on Electrical Power engineering, UralCon 2021

作者： Gazizova, Olga V. Kornilov, Gennadij P. Sokolov, Alexander P. Mazitov, Dmitrij M. Electric Power Supply of Industrial Enterprises Department Power Engineering and Automated Systems Institute Nosov Magnitogorsk State Technical University Magnitogorsk Russia Department of Electronics and Microelectronics Power Engineering and Automated Systems Institute Nosov Magnitogorsk State Technical University Magnitogorsk Russia

ISBN: (纸本)9781665419666

One of the main types of automation on power plants is automatic adjustment of the excitation of synchronous generators. As the electric power systems and growth in the number of sources of distributed generation, the automatic excitation regulation requirements are significantly increased. At the same time, on the one hand, the pathogens of synchronous machines are improved, and on the other hand, the laws of automatic excitation regulation are complicated. Modern industry generally produces universal excitation systems that can be adapted to any power plant power plant. Of particular interest today are issues of adaptation of excitation control systems to industrial generators and conditions from operation. In this paper, there was an analysis of existing automatic control systems for the excitation of industrial generators, their characteristics, dignity and disadvantages are given in relation to industrial networks of a complex configuration. A feature of such networks is the inclusion of generators on different stages of transformation and, therefore, different conditions for maintaining a given voltage level on the clips. As the analysis of the operational characteristics of industrial generators shows, their excitation systems are not fully adapted to the conditions of local power supply, which in some cases leads to manual regulation. This is due to the work on a high-power network, which changes the voltage, as well as a change in active and reactive loads of machines. As an example, a scheme of the factory power plant complex configuration is shown. The characteristics of the change in the capacity and the voltage of the real industrial generator for the year are given. Conclusions about the need to adapt the excitation control system in industrial power supply conditions. The article provides general recommendations on the ways of improving the excitation systems of synchronous generators of industrial power plants. The purpose of the recommendations is t

关键词： Synchronous generators

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A 60GHz BiCMOS self-demodulator with injection locked oscillator

A 60GHz BiCMOS self-demodulator with injection locked oscill...

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8th International SoC Design Conference 2011, ISOCC 2011

作者： Lu, Zhenghao Yu, Xiao Peng Yeo, Kiat Seng Lim, Wei Meng Yan, Jinna Pan, Renjing Department of Microelectronics Soochow University Suzhou 215006 China Institute of VLSI Design Zhejiang University Hangzhou 310027 China Division of Circuits and Systems School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Singapore

ISBN: (纸本)9781457707100

This paper proposes a wide-band self-demodulating receiver for 60GHz ISM band applications. The proposed receiver architecture self-demodulates the OOK input signal by using injection locked oscillator and passive mixer. This simple architecture features extremely ultra-lower-power consumption and faster settling time. Implemented in Tower Jazz 180nm SiGe technology with 200GHz fT, the proposed receiver is able to work at the 60GHz ISM-band frequency range with an OOK data rate up to 2Gbps. The current consumption of the whole receiver is less than 15mA from a single 1.8V supply. ©2011 IEEE.

关键词： Si-Ge alloys

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A low-fabrication-temperature, high-gain chip-scale waveguide amplifier

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Science China(Information Sciences) 2022年第6期65卷 247-255页

作者： Bo WANG Peiqi ZHOU Xingjun WANG Yandong HE State Key Laboratory of Advanced Optical Communication Systems and Networks Department of ElectronicsSchool of Electronics Engineering and Computer Science Peking University Institute of Microelectronics School of Electronics Engineering and Computer Science Peking University Frontier Science Center for Nano-optoelectronics Peking University Peking University Yangtze Delta Institute of Optoelectronics Peng Cheng Laboratory

The increasing prevalence of integrated on-chip optoelectronic devices has identified serious issues regarding inter-device transmission and coupling losses, highlighting an urgent need for on-chip waveguide amplifiers to compensate for these losses. Compared with other Er-based optical materials, erbium silicate is ideally suited to high-efficiency on-chip amplifiers and lasers because of its extremely high Er3+concentration(1022cm-3). Nevertheless, erbium silicate must be annealed above 1000℃ to crystallize and activate the Er3+, which damages other on-chip optoelectronic components and is not conducive to device ***, we report a low-fabrication-temperature, high-luminescence-efficiency gain material by adding Bi2O3to an erbium-ytterbium silicate mixed film. Our experiments demonstrate that the proposed film crystallizes at 600℃ while the activation of Er3+is also achieved, which is the lowest activation temperature of on-chip waveguide amplifier to our knowledge. This material forms the basis for a new chip-scale waveguide amplifier design, with a theoretical multi-energy-level model of Bi-Er-Yb in the mixed thin films used to analyze its signal enhancement properties. We achieve a peak on-chip gain of 23 dB in a 3.3-mm-long waveguide under the pump and signal powers of 300 mW and 1 μW, respectively. These results highlight the potential of the proposed material for realizing on-chip amplifiers and lasers for large-scale nanophotonic integrated circuits.

关键词： photonic circuit integration low fabrication temperature high gain rare earth material waveguide amplifier

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Spray-coated electret materials with enhanced stability in a harsh environment for an MEMS energy harvesting device

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Microsystems & Nanoengineering 2021年第1期7卷 151-159页

作者： Anxin Luo Yixin Xu Yulong Zhang Mi Zhang Xiaoqing Zhang Yan Lu Fei Wang School of Microelectronics Southern University of Science and Technology518055 ShenzhenChina State Key Laboratory of AMS-VLSI Institute of MicroelectronicsUniversity of Macao(UM)999078 MacaoChina Department of Electrical and Computer Engineering FSTUM999078 MacaoChina Engineering Research Center of Integrated Circuits for Next-Generation Communications Ministry of EducationSouthern University of Science and Technology518055 ShenzhenChina Department of Mechanical Engineering Boston UniversityBostonMAUSA College of New Materials and New Energies Shenzhen Technology University518118 ShenzhenChina Shanghai Key Laboratory of Special Artificial School of Physics Science and Engineering Tongji University200092 ShanghaiChina

The charge stability of electret materials can directly affect the performance of electret-based devices such as electrostatic energy *** this paper,a spray-coating method is developed to deposit an electret layer with enhanced charge *** long-term stability of a spray-coated electret is investigated for 500 days and shows more stable performance than a spin-coated layer.A second-order linear model that includes both the surface charge and space charge is proposed to analyze the charge decay process of electrets in harsh environments at a high temperature(120°C)and high humidity(99%RH);this model provides better accuracy than the traditional deep-trap *** further verify the stability of the spray-coated electret,an electrostatic energy harvester is designed and fabricated with MEMS(micro-electromechanical systems)*** electret material can work as both the bonding interface and electret layer during fabrication.A maximum output power of 11.72μW is harvested from a vibrating source at an acceleration of 28.5 m/*** the energy harvester with the spray-coated electret is exposed to a harsh environment(100°C and 98%RH),an adequate amount of power can still be harvested even after 34 h and 48 h,respectively.

关键词： stability. stability electrostatic

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A 64.5-88 GHz coupling-concerned CMOS LNA with >10 dB Gain and 5 dB Minimum NF

A 64.5-88 GHz coupling-concerned CMOS LNA with >10 dB Gain a...

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2020 IEEE/MTT-S International Microwave Symposium, IMS 2020

作者： Zhang, Kaijuan Shi, Chunqi Chen, Guangsheng Chen, Jinghong Zhang, Runxi Institute of Microelectronic Circuits and Systems East China Normal University Shanghai China Shanghai Eastsoft Microelectronics Co. Ltd. Shanghai China University of Houston Department of Electrical and Computer Engineering Houston United States

ISBN: (纸本)9781728168159

This paper presents a differential 64.5-88 GHz wideband low-noise amplifier (LNA) in a 55-nm CMOS technology. The LNA is consisted of two common-source (CS) stages and one cascode stage. To achieve a wide bandwidth (BW), an interstage coupling network scheme utilizing step-up transformers and co-optimizing the interstage transimpedance responses is developed. A new transformer-based dual-coupling (TBDC) gm-boosted topology is proposed to simultaneously achieve high gain and low noise. In addition, capacitive neutralization and common-gate-shorting (CGS) techniques are utilized to improve gain and stability. The LNA achieves a peak gain of 15 dB, a wideband gain of >10 dB over 64.5-88 GHz, a S11 of © 2020 IEEE.

关键词： Low noise amplifiers

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Design of probabilistic-based Markov Random Field logic gates in 65nm CMOS technology

Design of probabilistic-based Markov Random Field logic gate...

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2010 International SoC Design Conference, ISOCC 2010

作者： Lu, Zhenghao Yu, Xiao Peng Yeo, Kiat Seng Department of Microelectronics Soochow University Suzhou 215006 China Institute of VLSI Design Zhejiang University Hangzhou 310027 China Division of Circuits and Systems School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Singapore

ISBN: (纸本)9781424486335

As the VLSI technology node is getting into the sub-100nm regime, the reliability issues caused by random interferences such as noise, process variations and manufacturing defects are changing the nature of digital computation from deterministic to probabilistic. This paper studies the principle of probabilistic-based Markov Random Field (MRF) design methodology for CMOS static logic gates. The MRF design technique is able to significantly improve the reliability and interference tolerance of the logic circuits. A Differential Cascode Voltage Switch (DCVS) based MRF logic design method is proposed, which presents substantial noise immunity improvement over the normal MRF logic circuits. The proposed method is validated by simulation in 65nm CMOS technology. ©2010 IEEE.

关键词： Logic gates

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ZnSe/NiO heterostructure-based chemiresistive-type sensors for low-concentration NO_(2) detection

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Rare Metals 2021年第6期40卷 1632-1641页

作者： Wei Liu Ding Gu Jian-Wei Zhang Xiao-Gan Li Marina N.Rumyantseva Alexander M.Gaskov School of Microelectronics Key Laboratory of Liaoning for Integrated Circuits TechnologyDalian University of TechnologyDalian 116024China Liaoning Key Laboratory of Integrated Circuit and Biomedical Electronic System Faculty of Electronic Information and Electrical EngineeringDalian University of TechnologyDalian 116024China Laboratory of Chemistry and Physics of Semiconductor and Sensor Materials Chemistry DepartmentMoscow State UniversityMoscow 199991Russia

Novel ZnSe/NiO heterostructure nanocomposites were successfully prepared by one-step hydrothermal *** ZnSe/NiO-based sensor exhibits a response of~96.47% to 8×10^(-6) NO_(2) at 140℃,which is significantly higher than those of intrinsic ZnSe-based(no response)and NiO-based(~19.65%)*** theoretical detection limit(LOD)of the sensor is calculated to be 8.91×10^(-9),indicating that the sensor can be applied to detect the ultralow concentrations of NO_(2).The effect of NiO content on the gas-sensing performance of the nanocomposites was investigated in *** optimal NiO content in the nanocomposite is determined to be15.16%to achieve the highest *** as-fabricated sensor also presents an excellent selectivity to several possible interferents such as methanol,ethanol,acetone,benzene,ammonia and *** enhanced sensing performance can be attributed to the formation of p-p heterostructures between ZnSe and NiO,which induces the charge transfer across the interfaces and yields more active sites.

关键词： ZnSe/NiO heterostructure NO_(2)detection Gas sensors Charge transfer

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Equivalence checking for digital circuits

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IEEE Potentials 2004年第2期23卷 21-23页

作者： Falkowski, Bogdan J. Electrical Engineering Department Portland State University United States School of Electrical and Electronic Engineering Nanyang Technological University Singapore Singapore IEEE Singapore IEEE Computer Society Singapore IEEE Circuits and Systems Society United States Eta Kappa Nu and Pi Beta Upsilon Singapore

No abstract available

关键词： Digital circuits Application specific integrated circuits Design engineering Formal verification Costs Silicon Circuit simulation Process design Production Circuit testing

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