Step-graded InGaPySb1-y and InxGa 1-xAs metamorphic buffer layer (MBL) structures are grown on GaAs substrates by metal-organic chemical vapor deposition (MOCVD). AFM analysis indicates that graded group V InGaPySb1-y...
详细信息
Modulation Extrinsic photoconductivity spectra between 1.44eV and 1.75eV of unintentionally n-doped high resistance GaN film grown by MOCVD are measured at room temperature by using wavelength adjustable Ti:Sapphire l...
Modulation Extrinsic photoconductivity spectra between 1.44eV and 1.75eV of unintentionally n-doped high resistance GaN film grown by MOCVD are measured at room temperature by using wavelength adjustable Ti:Sapphire laser. We find that there are two major deep levels in the GaN material in the used photon energy range. The relaxation time of excess carriers controlled by those levels are in the order of 10−4sec. The concentration of localized states are determined as 1.8×108cm−3 and 2.5×109cm−3, respectively. A physical model is developed to explain the results and process the data. Using a new method we have determined the optical absorption cross section of deep levels are 1.5×10−17cm2 and 2.7×10−18cm2, respectively.
In this paper we employed the TSC method to investigate the traps in GaN. The measured sample was a M-S-M UV-detector of high-resistance GaN on sapphire grown by LP-MOCVD. The relation of dark conductance to temperatu...
In this paper we employed the TSC method to investigate the traps in GaN. The measured sample was a M-S-M UV-detector of high-resistance GaN on sapphire grown by LP-MOCVD. The relation of dark conductance to temperature clearly showed three major donor levels at 0.019, 0.13 and 0.74eV respectively. TSC measurements from 60 to 380K indicated that there were at least 11 traps in the GaN material. The active energy of those traps were 0.15, 0.19, 0.25, 0.28, 0.33, 0.39, 0.47, 0.55, 0.60, 0.63 and 0.67eV. The range of trap density is from 6 × 1014cm−3 to 2 × 1018cm−3. By comparing TSC spectrum to dark current, we consider there are at least 4 hole traps in the measured range with energy of 0.25, 0.28, 0.33 and 0.39eV. The illumination time effect was studied and discussed.
Soft and high magnetic moment Co37Fe63 films were electro-deposited with variable additives on Cu/Ti/Si substrates. The correlation between structure and magnetic properties has been investigated. TEM showed the cryst...
详细信息
ISBN:
(纸本)9781118029473
Soft and high magnetic moment Co37Fe63 films were electro-deposited with variable additives on Cu/Ti/Si substrates. The correlation between structure and magnetic properties has been investigated. TEM showed the crystal structure of the films to be BCC with a 〈111〉 texture, and a grain size in the range of 10-20 nm. Oxygen in the deposited films has been identified by EDS and EELS using HAADF STEM. SIMS analysis revealed the presence of hydrogen and oxygen in the deposited CoFe films. Electron microscopy results showed that the oxygen was mainly distributed along the grain boundaries in the CoFe film. In regions where oxygen was present in the films, the Fe content was enhanced relative to Co. The magnetic properties of the deposits have been measured by Vibrating Sample Magnetometer (VSM), quantifying the impact of incorporated oxygen in the film on the saturation magnetization and the coercivity.
Deoxyribonucleic acids provide exciting opportunities as templates in self assembled architectures and functionality in terms of optical and electronic properties. In this study, we investigate the effects of metalize...
详细信息
Deoxyribonucleic acids provide exciting opportunities as templates in self assembled architectures and functionality in terms of optical and electronic properties. In this study, we investigate the effects of metalized DNA sequences in organic bulk-heterojunction solar cells. These effects are characterized via optical, quantum efficiency and current-voltage measurements. We demonstrated that by arranging the band energy structure of the devices via placing metalized deoxyribonucleic acid sequences on the hole collection side of the active layer lead to a 20% increase in the power conversion efficiency.
The effects of post-deposition annealing (PDA) on the electrical characteristics of ZrO 2 and HfO 2 gate dielectric films were investigated. After PDA at 600°C, the insulating properties of ZrO 2 were improved...
详细信息
The effects of post-deposition annealing (PDA) on the electrical characteristics of ZrO 2 and HfO 2 gate dielectric films were investigated. After PDA at 600°C, the insulating properties of ZrO 2 were improved, while those of HfO 2 were deteriorated. The improved insulating properties of ZrO 2 are attributed to both the negligible increase of interfacial layer (IL) thickness and the transformation of its crystalline structure to the tetragonal phase. The degraded insulating properties of HfO 2 after PDA at high temperatures were due to the abrupt increase of IL thickness and the generation of current paths through grain boundaries. The different IL growth between HfO 2 and ZrO 2 after PDA could be understood from the different formation energy of oxygen interstitials in the two dielectric films.
Mn+1AXn phases (M: early transition metal, A: IIIA- or IVA-group element, X: carbon or nitrogen) are layered ternary compounds that possess both metal- and ceramic-like properties with numerous potential applications ...
详细信息
Mn+1AXn phases (M: early transition metal, A: IIIA- or IVA-group element, X: carbon or nitrogen) are layered ternary compounds that possess both metal- and ceramic-like properties with numerous potential applications in bulk and thin film forms, particularly under high-temperature conditions. In this work, we use the cluster expansion formalism to investigate the energetics of C-N interactions across the entire Ti2AlC-Ti2AlN composition range. It is shown that there is a definite tendency for ordering in the C,N sublattice. However, the molar volume and bulk modulus of the ordered structures found along the Ti2AlC-Ti2AlN composition range show small deviations from the (linear) rule of mixing, indicating that despite the ordering tendencies, the C-N interactions are not strong and the solution becomes disordered at relatively low temperatures. Random solid solutions of Ti2AlC1−xNx are simulated using special quasirandom structures (SQS) with x=0.25, 0.50, and 0.75. The thermodynamic properties of these structures are compared to those of the structures found to belong to the ground state through the cluster expansion approach. It is found that the structural properties of these approximations to random alloys do not deviate significantly from Vegard's law. The trend in the structural parameters of these SQS are found to agree well with available experimental data and the predictions of the bulk modulus suggest a very weak alloying effect—with respect to Vegard's law—on the elastic properties of Ti2AlC1−xNx.
暂无评论