Amorphous oxide semiconductor memory devices with HfInZnOx as the channel layer and high k dielectric stacks as the charge storage medium were fabricated. HfO2 and Al2O3 and HfAlOx films were examined as the charge tr...
Amorphous oxide semiconductor memory devices with HfInZnOx as the channel layer and high k dielectric stacks as the charge storage medium were fabricated. HfO2 and Al2O3 and HfAlOx films were examined as the charge trap layers. The drain current - gate voltage transfer curves of the fabricated charge trap memories show a large hysteresis due to the electron trapping and de-trapping at the interfaces between the high-k charge storage layer and the SiO2. The device structure and operational scheme for the amorphous oxide semiconductor charge trap memories were suggested based on these properties.
There remains considerable interest in the behavior of acceptors in ZnO, the ultimate goal being the realization of device grade p-type material. Silver is a candidate acceptor, and, in this study, in situ doping of s...
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We have been developing a new approach to layered hybrid (inorganic/organic) photovoltaic materials for fabrication by Roll-to-Roll (R2R) manufacturing. In this report, we combine the low cost and processability of or...
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Compositional lipid microdomains (“lipid rafts”) in mammalian plasma membranes are believed to facilitate many important cellular processes. While several physically distinct scenarios predicting the presence of fin...
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Compositional lipid microdomains (“lipid rafts”) in mammalian plasma membranes are believed to facilitate many important cellular processes. While several physically distinct scenarios predicting the presence of finite-sized microdomains in vivo have been proposed in the past, direct experimental verification or falsification of model predictions has remained elusive. Herein, we demonstrate that the combination of the spatial correlation and temporal fluctuation spectra of the lipid domains can be employed to unambiguously differentiate between the existing theoretical scenarios. Furthermore, the differentiation of the raft formation mechanisms using this methodology can be achieved by collecting data at physiologically relevant conditions without the need to tune control parameters.
Compositional lipid domains (lipid rafts) in plasma membranes are believed to be important components of many cellular processes. The mechanisms by which cells regulate the sizes, lifetimes, and spatial localization o...
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Compositional lipid domains (lipid rafts) in plasma membranes are believed to be important components of many cellular processes. The mechanisms by which cells regulate the sizes, lifetimes, and spatial localization of these domains are rather poorly understood at the moment. We propose a robust mechanism for the formation of finite-sized lipid raft domains in plasma membranes, the competition between phase separation in an immiscible lipid system and active cellular lipid transport processes naturally leads to the formation of such domains. Simulations of a continuum model reveal that the raft size distribution is broad and the average raft size is strongly dependent on the rates of cellular and interlayer lipid transport processes. We demonstrate that spatiotemporal variations in the recycling may enable the cell to localize larger raft aggregates at specific parts along the membrane. Moreover, we show that membrane compartmentalization may further facilitate spatial localization of the raft domains. Finally, we demonstrate that local interactions with immobile membrane proteins can spatially localize the rafts and lead to further clustering.
The interest to silicon-diamond structures was recently renewed motivated by industry's needs for composite substrates and better thermal management. In this work we investigated thermal conductivity and thermal b...
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The interest to silicon-diamond structures was recently renewed motivated by industry's needs for composite substrates and better thermal management. In this work we investigated thermal conductivity and thermal boundary resistance (TBR) of ultrananocrystalline (UNCD) and microcrystalline diamond (MCD) films on silicon. The measurements were carried out using the transient plane source (TPS) technique. It was found that most of the silicon-synthetic heterostructures are rather resistive thermally with the TBR values of up to ~10 -6 m 2 K/W at room temperature. We established an importance of the trade-off between the structures characterized by the ultra-small diamond grain size with smooth silicon-diamond interface and those with larger grain size but rougher interface. It is shown that composite Si/Diamond wafers are promising at the elevated temperatures characteristic for operation of state-of-art electronic devices. The knowledge of TBR and heat conduction through silicon - diamond heterostructures is important for further development of composite substrates for electronic and optoelectronic industries.
The dynamics of polymer chains near the surface of a melt and within thin films remains a subject of inquiry along with the nature of the glass transition in these systems. Recent studies show that the properties of t...
The dynamics of polymer chains near the surface of a melt and within thin films remains a subject of inquiry along with the nature of the glass transition in these systems. Recent studies show that the properties of the free surface region are crucial in determining the anomalous glass transition temperature (Tg) reduction of polymer thin films. In this study, by embedding 'dilute' gold nanoparticles in polystyrene (PS) thin films as 'markers', we could successfully probe the diffusive Brownian motion which tracks the local viscosity both at the free surface and within the rest of the single PS thin film far above bulk Tg. The technique used was X-ray photon correlation spectroscopy with resonance-enhanced X-rays that allows us to independently measure the motion in the regions of interest at the nanometer scale. We found the presence of the surface reduced viscosity layer in entangled PS thin films at T>>Tg.
Motivated by recent experiments, we investigate how NO3−SWNT interactions become energetically favorable with varying oxidation state of a single-walled carbon nanotube (SWNT) using first-principles calculations. Chem...
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Motivated by recent experiments, we investigate how NO3−SWNT interactions become energetically favorable with varying oxidation state of a single-walled carbon nanotube (SWNT) using first-principles calculations. Chemisorption becomes less endothermic with respect to physisorption when the SWNT oxidation state is elevated. Importantly, the dissociative incorporation of an oxygen atom into the SWNT sidewall becomes highly favorable when the SWNT oxidation state is elevated from electron density depletion in the vicinity, as caused experimentally using electrochemical potential. The elevation of the SWNT oxidation state through accumulating local charge transfer from the surrounding molecules does not have the same effect. Our investigation reveals the crucial effects of the SWNT oxidation state in understanding the molecule-SWNT interaction.
K562 mammalian cells are sorted using a highly integrated microfabricated fluorescence-activated cell sorter (∝FACS). The sample cells are purified with an enrichment factor of 230 at a high throughput (> 1,000 ce...
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A theoretical model is developed for ferroelectric bilayers and multilayer heterostructures that employs a nonlinear Landau-Devonshire formalism coupled with a detailed analysis of the depolarizing fields arising from...
A theoretical model is developed for ferroelectric bilayers and multilayer heterostructures that employs a nonlinear Landau-Devonshire formalism coupled with a detailed analysis of the depolarizing fields arising from the polarization mismatch across interlayer interfaces and the electrical fields of localized space charges at such interfaces. We first present how space charges alter the free-energy curves of ferroelectrics and then proceed with a numerical analysis for heteroepitaxial (001) PbTiO3-SrTiO3 (PTO-STO) bilayers and (001) superlattice structures on (001) STO substrates. The switchable (ferroelectric) and nonswitchable (built-in) polarizations and the dielectric properties of PTO-STO bilayers and superlattices are calculated as a function of the planar space-charge density and the volume fraction of the PTO layer. Similar to the temperature dependence of a monolithic ferroelectric, there exists a critical volume fraction PTO below which the bilayer or the superlattice is in the paraelectric state. This critical volume fraction is strongly dependent on the density of trapped charges at the interlayer interfaces. For charge-free (001) PTO-STO heteroepitaxial bilayer and superlattices, the critical fraction is 0.40 for both constructs but increases to 0.6 and 0.72, for the bilayer and the superlattice, respectively, for a planar space-charge density of 0.05 C/m2. Furthermore, our results show that close to the vicinity of ferroelectric-paraelectric phase transition, there is a recovery in ferroelectric polarization. The dielectric-response calculations verify that there is sharp ferroelectric phase transformation for charge-free bilayers and superlattices whereas it is progressively smeared out with an increase in the charge density. Furthermore, our analysis shows that the dielectric constant of these multilayers at a given volume fraction of PTO decreases significantly in the presence of space charges.
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