检索结果-内蒙古大学图书馆

Conference on Electrical Insulation and Dielectric Phenomena, (CEIDP)

作者： Jierui Zhou Marina Dabaghian Anna Marie LaChance Jing Hao Wesley Zhong Luyi Sun Yang Cao Department of Electrical and Computer Engineering University of Connecticut Storrs CT USA Electrical Insulation Research Center Institute of Materials Science University of Connecticut Storrs CT USA Department of Chemical and Biomolecular Engineering University of Connecticut Storrs CT USA Polymer Program Institute of Materials Science University of Connecticut Storrs CT USA

Polymer-thin films are critical dielectric materials for capacitive energy storage in power and electronic systems. The rapid development of wide bandgap semiconductors urgently calls for polymers that can attain high energy density and high charge-discharge efficiency at elevated temperatures. However, high-temperature polymers usually suffer from compromised dielectric breakdown strength and soaring conduction loss due to the intrinsic constraint between their bandgaps and thermal stability. In this work, we propose a facile and high throughput interface engineering technique utilizing nanocoatings formed by montmorillonite (MMT) nanoclays, which can serve as an out-of-the-box solution to bypass this constraint. The highly ordered MMT-based nanocoatings with layered structure can significantly block the excessive charge injection at high electric fields and dissipate the charge carriers along the in-plane direction. The MMT-coated PI films exhibit improved breakdown strength, suppressed conduction loss, and boosted charging-discharging efficiency. This work holds the promise of improving the dielectric properties of polymers through surface engineering, enabling their application at concurrent electrical and thermal extremes.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Ultrafine-Grained Stainless Steel with Wear-Resistant Nanoborides Decorating Grain Boundaries Produced by Laser Powder Bed Fusion

SSRN

引用

SSRN 2024年

作者： Martins Freitas, Brenda Juliet Koga, Guilherme Yuuki Miguel Rodrigues, Luana Cristina Botta Filho, Walter José Amancio-Filho, Sergio de Traglia Bolfarini, Claudemiro Federal University of São Carlos Graduate Program in Materials Science and Engineering São Carlos13.565-905 Brazil Graz University of Technology Institute of Materials Science Joining and Forming Graz8010 Austria Federal University of São Carlos Department of Materials Engineering São Carlos13.565-905 Brazil Rod. Washington Luis São Carlos13565-905 Brazil

Stainless steel composites combine corrosion resistance and toughness of the metallic matrix with wear resistance granted by hard reinforcing nanoparticles. Given their near-net-shape manufacturing characteristics, additive manufacturing techniques are attractive to produce these hard and wear-resistant classes of materials with low machinability. In this work, from a SAF 2205 duplex stainless steel with boron addition, laser powder bed fusion (LBPF) was employed to produce an ultrafine-grained (~1 µm), dense (porosity ~0.1%), and crack-free ferritic-induced matrix composite with Cr2B-nanoborides reinforcing the grain boundaries (GBs) without formation of Cr-depleted regions. The composite showed significant higher hardness (up to 456 HV0.5) and wear resistance (4.4 x 10-5 mm3 N-1m-1) in sliding condition compared to a hot-rolled (225 HV0.5 and 2.9 x 10-3 mm3 N-1m-1) and a LPBF-produced SAF 2205 (314 HV0.5 and 3.3 x 10-4 mm3 N-1m-1). © 2024, The Authors. All rights reserved.

关键词： Wear of materials

来源：评论

学校读者我要写书评

暂无评论

Low-Loss, Nonvolatile Tuning of Bragg Structures with Sb2Se3

Low-Loss, Nonvolatile Tuning of Bragg Structures with Sb2Se3

引用

Conference on Lasers and Electro-Optics (CLEO)

作者： Nicholas A. Nobile Chuanyu Lian Hongyi Sun Yi-Siou Huang Brian Mills Cosmin Constantin Popescu Dennis Callahan Juejun Hu Carlos A. Ríos Ocampo Nathan Youngblood Electrical & Computer Engineering Department University of Pittsburgh Pittsburgh PA USA Department of Materials Science & Engineering University of Maryland College Park MD USA Institute for Research in Electronics and Applied Physics University of Maryland College Park MD USA Department of Materials Science & Engineering Massachusetts Institute of Technology Cambridge MA USA Draper Scholar Program The Charles Stark Draper Laboratory Inc Cambridge MA USA The Charles Stark Draper Laboratory Inc Cambridge MA USA

Sb 2 Se 3 is used to switch between broadband transparency and enhanced index contrast in two device types leveraging Bragg gratings for tunable stop-and pass-band functionalities. Experimental results highlight fabr... 详细信息

ISBN: (纸本)9798350369311

关键词： Bragg gratings Waveguide transitions Phase change materials Optical filters Optical switches Refractive index Fabry-Perot Indexes Passband Optical waveguides

来源：评论

学校读者我要写书评

暂无评论

Development of Novel 3D Cell Structure and Manufacturing Processes for Highly Efficient, Durable, and Redox Resistant Solid Oxide Electrolysis Cells

Development of Novel 3D Cell Structure and Manufacturing Pro...

引用

243rd ECS Meeting

作者： Lee, S. Lin, H. Kahn, B.E. Malakhov, A. Kovach, B. Tran, Q. Ghosh, S. Liu, P. Cormier, D. Minh, N.Q. Center for Energy Research University of California La Jolla San DiegoCA92093 United States Department of Nanoengineering University of California La Jolla San DiegoCA92093 United States RocCera LLC RochesterNY14624 United States Department of Packaging and Graphic Media Science Rochester Institute of Technology RochesterNY14623 United States School of Chemistry and Materials Science Rochester Institute of Technology RochesterNY14623 United States Department of Industrial and Systems Engineering Rochester Institute of Technology RochesterNY14623 United States

ISBN: (纸本)9781607685395

A novel cell design and its corresponding manufacturing processes are being evaluated to demonstrate a highly efficient, durable, and reduction-oxidation (redox) resistant solid oxide electrolysis cell (SOEC) technology for hydrogen production. The cell design includes a unique 3D hydrogen electrode configuration composed of two layers - a 3D hydrogen electrode support and an exsolved perovskite hydrogen electrode active layer. The hydrogen electrode support layer consists of specifically designed 3D networks of electrode materials;tetragonal zirconia (TZ) and Ni-yttria stabilized zirconia (YSZ). The hydrogen electrode active layer is a nickel-substituted perovskite that will exsolve nickel nanoparticles on the oxide surface when exposed to a reducing environment. This paper presents the progress to date in developing a printing-based additive manufacturing fabrication process for the 3D hydrogen electrode support and evaluating exsolved nickel-substituted perovskite for the hydrogen electrode active layer. © The Electrochemical Society.

关键词： Regenerative fuel cells

来源：评论

学校读者我要写书评

暂无评论

Influence of Treatment Time on the Synthesis of Copper Oxide Films by Cathode Cage Plasma Deposition

SSRN

引用

SSRN 2023年

作者： de Carvalho, Júlio F.S. Monção, Renan M. de Sousa, Ediones M. da Luz Lima, Cleânio Costa, Carla L.S.C. Garcia, Ramón R.P. Feitor, Michelle C. de Carvalho Costa, Thércio H. Libório, Maxwell S. de Sousa, Rômulo R.M. Federal University of Piauí Graduate Program in Materials Science and Engineering PI Teresina Brazil Federal University of Piauí Physics Postgraduate Program PI Teresina Brazil Federal university of Rio Grande do Norte Department of Materials Science and Engineering RN Natal Brazil Federal University of Rio Grande do Norte Department of Mechanical Engineering RN Natal Brazil Federal university of Rio Grande do Norte School of Science and Technology RN Natal Brazil

Copper oxide is a valuable p-type semiconductor for photovoltaic applications. In this work, plasma deposition with cathodic cage (CCPD) of copper oxide (CuO+Cu2O) films on glass was performed to evaluate the microstructural, morphological, chemical, and bandgap changes as a function of the treatment time variation (2, 3, 4, and 5 hours). The samples were analyzed by Scanning Electron Microscopy (SEM), Energy Dispersive System (EDS), X-ray Diffraction (XRD), and Raman Spectroscopy to identify morphologies, chemical composition, and crystalline phases of the deposited films, and the absorption spectrum optics was used to calculate the bandgap width. All films showed bandgap energies around 2.60 eV. However, the sample treated with a time of 3h presented a compact coating with 1.46 µm of thickness and bandgap energy equal to 2.57 eV, being the best result. © 2023, The Authors. All rights reserved.

关键词： Energy gap

来源：评论

学校读者我要写书评

暂无评论

Tuning light emission crossovers in atomic-scale aluminum plasmonic tunnel junctions

arXiv

引用

arXiv 2022年

作者： Zhu, Yunxuan Cui, Longji Abbasi, Mahdiyeh Natelson, Douglas Department of Physics and Astronomy Rice University HoustonTX77005 United States Paul M. Rady Department of Mechanical Engineering University of Colorado BoulderCO80309 United States Materials Science and Engineering Program University of Colorado BoulderCO80309 United States Department of Electrical and Computer Engineering Rice University HoustonTX77005 United States Department of Materials Science and Nanoengineering Rice University HoustonTX77005 United States

Atomic sized plasmonic tunnel junctions are of fundamental interest, with great promise as the smallest on-chip light sources in various optoelectronic applications. Several mechanisms of light emission in electrically driven plasmonic tunnel junctions have been proposed, from single-electron or higher order multi-electron inelastic tunneling to recombination from a steady-state population of hot carriers. By progressively altering the tunneling conductance of an aluminum junction, we tune the dominant light emission mechanism through these possibilities for the first time, finding quantitative agreement with theory in each regime. Improved plasmonic resonances in the energy range of interest increase photon yields by two orders of magnitude. These results demonstrate that the dominant emission mechanism is set by a combination of tunneling rate, hot carrier relaxation timescales, and junction plasmonic properties. Copyright © 2022, The Authors. All rights reserved.

关键词： Tunnel junctions

来源：评论

学校读者我要写书评

暂无评论

Fate of multipolar physics in 5d2 double perovskites

引用

Physical Review B 2023年第4期108卷 045149-045149页

作者： Ahmed Rayyan Xiaoyu Liu Hae-Young Kee Department of Physics University of Toronto Toronto Ontario Canada M5S 1A7 Department of Materials Science and Engineering University of Washington Seattle Washington 98195 USA CIFAR Program in Quantum Materials Canadian Institute for Advanced Research Toronto Ontario Canada M5G 1M1

In a cubic environment, the ground state of spin-orbit coupled 5d2 ions is a non-Kramers Eg doublet, which hosts quadrupole and octupole moments. A series of 5d2 osmium double perovskites Ba2MOsO6 (M=Mg, Ca, Zn, Cd) have recently been proposed to exhibit multipolar orders. We investigate the structural properties of these materials using ab initio calculations and find that the cubic structure is unstable for the Cd compound while the Mg, Ca, and Zn materials retain Fm3¯m symmetry. We show that Ba2CdOsO6 favors a rhombohedral R3¯ structure characterized by a−a−a− octahedral tiltings as indicated by unstable T1g phonon modes. Trigonal distortions split the excited T2g triplet into an Eg′ doublet and an Ag singlet, which may cross energy levels with the Eg doublet and suppress the multipolar physics. We find a window where Eg remains the lowest energy state under trigonal distortion, enabling the emergence of multipole phases in noncubic crystal environments.

关键词： Spin-orbit coupling Mott insulators Perovskites Crystal-field theory Density functional theory

来源：评论

学校读者我要写书评

暂无评论

Nanostructures/Graphene/Silicon Junction-Based High-Performance Photodetection Systems: Progress, Challenges, and Future Trends

引用

Advanced materials Interfaces 2023年第7期10卷

作者： Iqbal, Muhammad Aamir Anwar, Nadia Malik, Maria Al-Bahrani, Mohammed Islam, Md. Rasidul Choi, Jeong Ryeol Pham, Phuong V. Liu, Xiaofeng School of Materials Science and Engineering Zhejiang University Hangzhou310027 China School of Materials Science and Engineering Tsinghua University Shaw Technical Science Building Haidian District Beijing100084 China Centre of Excellence in Solid State Physics University of the Punjab Lahore545900 Pakistan Chemical Engineering and Petroleum Industries Department Al-Mustaqbal University College Babylon51001 Iraq Department of Electrical and Electronic Engineering Bangamata Sheikh Fojilatunnesa Mujib Science and Technology University Melandah Jamalpur2012 Bangladesh Department of Nanoengineering Kyonggi University Suwon16227 Korea Republic of Kaohsiung80424 Taiwan

Graphene, due to its exceptional optoelectronic characteristics, high charge carrier mobility, wide absorption band, strong light-matter interactions, and its adjustable nature, has attracted a lot of interest. In light of this, an attempt was made to successfully deposit graphene on a silicon substrate. This results in the formation of a Schottky junction, which could extend the operation window of the graphene/silicon hybrid device to the near-infrared (NIR) region. Furthermore, since photodetectors built with Van der Waal heterostructures successfully extend the lifespan of dynamic charge carriers with improved the transportation range and speed of charge separation for effective photodetection, the technical development of optoelectronic devices has been greatly accelerated. Recent developments in graphene-silicon junction-based devices, their photodetection effectiveness, and active factors that can be used in a variety of applications are outlined, including optical synaptic systems, optical spectrometers, plasmonic devices, optical waveguides, and ultrafast photodetectors. Moreover, the shortcomings of the present optoelectronic devices are also concisely reviewed, along with the viable solutions offered by this new device and its application in next-generation devices. © 2023 The Authors. Advanced materials Interfaces published by Wiley-VCH GmbH.

关键词： Graphene

来源：评论

学校读者我要写书评

暂无评论

Atomic-scale origin of the low grain-boundary resistance in perovskite solid electrolytes

arXiv

引用

arXiv 2022年

作者： Lee, Tom Qi, Ji Gadre, Chaitanya A. Huyan, Huaixun Ko, Shu-Ting Zuo, Yunxing Du, Chaojie Li, Jie Aoki, Toshihiro Stippich, Caden John Wu, Ruqian Luo, Jian Ong, Shyue Ping Pan, Xiaoqing Department of Materials Science and Engineering University of California at Irvine IrvineCA United States Materials Science and Engineering Program University of California San Diego La Jolla CA United States Department of Physics and Astronomy University of California at Irvine IrvineCA United States Department of NanoEngineering University of California San Diego La Jolla CA United States Irvine Materials Research Institute University of California at Irvine IrvineCA United States

Oxide solid electrolytes (OSEs) have the potential to achieve improved safety and energy density for lithium-ion batteries, but their high grain-boundary (GB) resistance is a general bottleneck. In the most well studied perovskite OSE, Li3xLa2/3-xTiO3 (LLTO), the ionic conductivity of GBs is about three orders of magnitude lower than that of the bulk. In contrast, the related Li0.375Sr0.4375Ta0.75Zr0.25O3 (LSTZ0.75) perovskite exhibits low GB resistance for reasons yet unknown. Here, we used aberration-corrected scanning transmission electron microscopy and spectroscopy, along with an active learning moment tensor potential, to reveal the atomic scale structure and composition of LSTZ0.75 GBs. Vibrational electron energy loss spectroscopy is applied for the first time to characterize the otherwise unmeasurable Li distribution in GBs of LSTZ0.75. We found that Li depletion, which is a major reason for the low GB ionic conductivity of LLTO, is absent for the GBs of LSTZ0.75. Instead, the low GB resistivity of LSTZ0.75 is attributed to the formation of a unique defective cubic perovskite interfacial structure that contained abundant vacancies. Our study provides insights into the atomic scale mechanisms of low GB resistivity and sheds light on possible paths for designing OSEs with high total ionic conductivity. © 2022, CC BY-NC-ND.

关键词： Ionic conductivity

来源：评论

学校读者我要写书评

暂无评论

Low Temperature Spin Seebeck Effect in Non-Magnetic Vanadium Dioxide

arXiv

引用

arXiv 2023年

作者： Luo, Renjie Legvold, Tanner J. Chen, Liyang Navarro, Henry Basaran, Ali C. Hong, Deshun Liu, Changjiang Bhattacharya, Anand Schuller, Ivan K. Natelson, Douglas Department of Physics and Astronomy Rice University HoustonTX77005 United States Applied Physics Graduate Program Rice Quantum Institute Rice University HoustonTX77005 United States Department of Physics Center for Advanced Nanoscience University of California La Jolla San DiegoCA92093 United States Materials Science Division Argonne National Laboratory LemontIL60439 United States Department of Electrical and Computer Engineering Department of Materials Science and NanoEngineering Rice University HoustonTX77005 United States

The spin Seebeck effect (SSE) is sensitive to thermally driven magnetic excitations in magnetic insulators. Vanadium dioxide in its insulating low temperature phase is expected to lack magnetic degrees of freedom, as vanadium atoms are thought to form singlets upon dimerization of the vanadium chains. Instead, we find a paramagnetic SSE response in VO2 films that grows as the temperature decreases below 50 K. The field and temperature dependent SSE voltage is qualitatively consistent with a general model of paramagnetic SSE response and inconsistent with triplet spin transport. Quantitative estimates find a spin Seebeck coefficient comparable in magnitude to that observed in strongly magnetic materials. The microscopic nature of the magnetic excitations in VO2 requires further examination. Copyright © 2023, The Authors. All rights reserved.

关键词： Paramagnetism

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：