With the increasing use of micro-manufactured devices and the demand for low-cost fabrication techniques, this study presents a simple and scalable surface polishing method for laser etched acrylic using WELD-ON 4 acr...
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Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect(BPVE)but with a low cell *** the past few years,relatively larger BPVE coefficients have been reported for two-dimensional(2D)layer...
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Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect(BPVE)but with a low cell *** the past few years,relatively larger BPVE coefficients have been reported for two-dimensional(2D)layers and stacks with asymmety-induced spontaneous ***,we report a crucial breakthrough in boosting the BPVE in 3R-MoS2 by adopting edge contact(EC)geometry using bismuth semimetal *** clear contrast to the typically used top contact(TC)geometry,the EC metal which strongly adheres to the edges and the subtrates can induce a pronounced tensile strain to the 3R-MoS2,and the lateral contact geometry allows to completely access to in-plane polarization from underneath layers reachable by light,leading to>100 times of BPVE enhancement in *** further design a 3R-MoS2/WSe2 heterojunction to demonstrate constructive coupling of BPVE with the conventional photovoltaic effect,indicating their potential in photodetectors and photovoltaic devices.
Two-dimensional(2D)transition metal nitrides(TMNs)have garnered significant attention in fields such as energy storage and nanoelectronics due to their unique electrical properties,high chemical stability,and excellen...
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Two-dimensional(2D)transition metal nitrides(TMNs)have garnered significant attention in fields such as energy storage and nanoelectronics due to their unique electrical properties,high chemical stability,and excellent mechanical *** polycrystalline 2D TMNs films,grain boundaries(GBs)are inevitable structural defects that could play a crucial role in determining the material's *** rapid optical visualization methods is essential for obtaining large-scale information on the distribution of ***,the rapid visualization of GBs in 2D TMNs,as well as the impact of GBs on the material's electrical properties,has never been previously *** this study,we demonstrate the growth of monolayer tungsten nitride crystals on SiO_(2)/Si substrates by chemical vapor deposition(CVD).High-resolution transmission electron microscopy reveals the presence of GBs at the junctions of twisted grains.A wet-etch process utilizing buffered oxide etchant(BOE)enables rapid and effective visualization of these GBs with optical *** analyzing grains with different twist angles,we find that GBs at specific angles demonstrate increased stability during *** measurements revealed that tilted GBs hinder electrical transport,with GBs of a 62°twist angle showing sheet conductance nearly half that within the monolayer *** work not only provides insights into GBs in monolayer tungsten nitride but also lays the groundwork for exploring GBs-related properties in other 2D TMNs.
By decoupling temperature and flow fields through symmetry-correlated laser scan sequences,ISO-FLUCS enables quasi-isothermal optofluidic microscale *** technique offers precise control over fluid manipulation while m...
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By decoupling temperature and flow fields through symmetry-correlated laser scan sequences,ISO-FLUCS enables quasi-isothermal optofluidic microscale *** technique offers precise control over fluid manipulation while minimizing thermal damage.
Lithium-sulfur(Li-S)batteries are considered as strong competitors for next-generation energy storage because of their high theoretical energy ***,some challenges,such as shuttle effect of lithium polysulfides(LiPSs),...
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Lithium-sulfur(Li-S)batteries are considered as strong competitors for next-generation energy storage because of their high theoretical energy ***,some challenges,such as shuttle effect of lithium polysulfides(LiPSs),volume expansion of sulfur during charge/discharge process and poor conductivity of the cathode,hindered their commercial *** this paper,an excellent sulfur host material,the titanium single atom(TiSA)-anchored mesoporous N-incorporated carbon(TiSA-NC)was successfully *** introduction of TiSAs onto the NC textures optimized their electronic structures including the charge distribution between the constituent atoms and the total density of states(TDOS)near the Fermi ***,the button battery constructed by TiSA-NC delivered impressive energy storage performance:a high reversible capacity of 1077 mAh·g^(-1) at 0.1 C;an outstanding rate capacity of 541 mAh·g^(-1) at 3 C;a superior long-term stability with a capacity fading rate of 0.053%per cycle for 500 cycles at 0.5 *** work provided an effective strategy for manufacturing high performance Li-s batteries by designing and constructing single atom catalysts.
Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed maTher physics. They represent a new class of materials exhibiting nontrivial topological phases,and ...
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Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed maTher physics. They represent a new class of materials exhibiting nontrivial topological phases,and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic *** particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.
Superconducting critical temperature is the most attractive material property due to its impact on the applications of electricity transmission,railway transportation,strong magnetic fields for nuclear fusion and medi...
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Superconducting critical temperature is the most attractive material property due to its impact on the applications of electricity transmission,railway transportation,strong magnetic fields for nuclear fusion and medical imaging,quantum computing,*** ability to predict its value is a constant pursuit for condensed matter *** developed a new hierarchical neural network(HNN)AI algorithm to resolve the contradiction between the large number of descriptors and the small number of datasets always faced by neural network AI approaches to materials *** this new HNN-based AI model,a much-increased number of 909 universal descriptors for inorganic compounds,and a dramatically cleaned database for conventional superconductors,we achieved high prediction accuracy with a test R^(2)score of 95.6%.The newly developed HNN model accurately predicted T_(c)of 45 new high-entropy alloy superconductors with a mean absolute percent error below 6%compared to the experimental *** demonstrated a significant potential for predicting other properties of inorganic materials.
Two-dimensional(2D)ferroelectric compounds are a special class of materials that meet the need for devices miniaturization,which can lead to a wide range of ***,we investigate ferroelectric properties of monolayer gro...
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Two-dimensional(2D)ferroelectric compounds are a special class of materials that meet the need for devices miniaturization,which can lead to a wide range of ***,we investigate ferroelectric properties of monolayer group-IV monochalcogenides MX(M=Sn,Ge;X=Se,Te,S)via strain engineering,and their effects with contaminated hydrogen are also ***,GeTe,and GeS do not go through transition up to the compressive strain of-5%,and consequently have good ferroelectric parameters for device applications that can be further improved by applying *** to the calculated ferroelectric properties and the band gaps of these materials,we find that their band gap can be adjusted by strain for excellent photovoltaic *** addition,we have determined the most stable hydrogen occupancy location in the monolayer SnS and *** reveals that H prefers to absorb on SnS and SnTe monolayers as molecules rather than atomic *** a result,hydrogen molecules have little effect on the polarization and electronic structure of monolayer SnTe and SnS.
All-inorganic cesium lead bromide(CsPbBr_(3))perovskite solar cells have been attracting growing interest due to superior performance stability and low ***,low light absorbance and large charge recombination at TiO_(2...
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All-inorganic cesium lead bromide(CsPbBr_(3))perovskite solar cells have been attracting growing interest due to superior performance stability and low ***,low light absorbance and large charge recombination at TiO_(2)/CsPbBr_(3)interface or within CsPbBr_(3)film still prevent further performance ***,we report devices with high power conversion efficiency(9.16%)by introducing graphene oxide quantum dots(GOQDs)between TiO_(2)and perovskite *** recombination of interfacial radiation can be effectively restrained due to enhanced charge transfer *** with C-rich active sites can involve in crystallization and fill within the CsPbBr_(3)perovskite film as functional semiconductor *** work provides a promising strategy to optimize the crystallization process and boost charge extraction at the surface/interface optoelectronic properties of perovskites for high efficient and low-cost solar cells.
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted t...
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The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research interest. The intrinsic spontaneous valley polarization in two-dimensional magnetic systems, ferrovalley material, provides convenience for detecting and modulating the valley. In this review, we first introduce the development of ***, the valley polarization forms by the p-, d-, and f-orbit that are discussed. Following, we discuss the investigation progress of modulating the valley polarization of two-dimensional ferrovalley materials by multiple physical fields, such as electric, stacking mode, strain, and interface. Finally, we look forward to the future developments of valleytronics.
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