检索结果-内蒙古大学图书馆

1st International Conference on Global Aeronautical engineering and Satellite Technology, GAST 2024

作者： Gourari, Abdelali El Raoufi, Mustapha Skouri, Mohammed Ben Braim, Abdelghani Ait Ezzini, Mustapha Lahsen, Yassine Ait Achki, Samira Cadi Ayyad University Laboratory of Physics High Energy and Astrophysics Faculty of Science Semlalia Marrakech Morocco Cadi Ayyad University Laboratory of Materials Energy and Environment Faculty of Sciences Semlalia Marrakech Morocco Cadi Ayyad University Faculty of Sciences Semlalia Fluid Mechanics and Energetic Laboratory Marrakesh Morocco Cadi Ayyad University Laboratory of Computer Systems Engineering Faculty of Sciences Semlalia Marrakech Morocco Fstg Computer Science Department Marrakech Morocco

ISBN: (纸本)9798350371598

Those interested in artificial intelligence technologies, especially supervised and unsupervised learning in education, know they need considerable data for well-modeled training and high-quality accuracy. However, data access is not easy as it drains time and effort. So, in this paper, we will talk about the impact of artificial intelligence on education in general and how it will affect teachers' role in the future. We will also create an algorithm that will integrate several algorithms sequentially that will add value to this paper and contribute significantly to solving most of the problems that exist in education. Since the reinforcement learning (RL) algorithm is based on trial and error during training, it stores all the good events done in a considerable buffer. Once the RL model is ready, we will collect enough data to be used to train one of the algorithms mentioned earlier (supervised learning and unsupervised learning). © 2024 IEEE.

关键词： Reinforcement learning

来源：评论

学校读者我要写书评

暂无评论

Redox energy barrier management for efficient tin-lead perovskite solar cells

引用

National science Review 2025年第5期 203-212页

作者： Zhangwei He Feng Wang Yiman Dong Yuling Zhang Runnan Yu Feng Gao Zhan'ao Tan Beijing Advanced Innovation Center for Soft Matter Science and Engineering College of Materials Science and Engineering Beijing University of Chemical Technology Department of Physics Chemistryand Biology (IFM)Link?ping University

The performance of narrow-bandgap mixed tin-lead（Sn-Pb） perovskite solar cells（Per SCs） is still limited by high defect densities due to the facile oxidation of Sn2+, leading to severe p-type self-doping. Here, we report a strategy of redox energy barrier managing to construct high-quality Sn-Pb perovskite, where 1,1′-bis（diphenylphosphino）ferrocene（DPPF） with a lower reaction energy barrier can protect Sn2+from oxidation, where the oxidized products of DPPF tend to anchor with the Sn vacancies, effectively depressing the trap densities of perovskite. The optimized inverted Per SC reached an impressive power conversion efficiency（PCE） of 23.5%（23.38% certified） accompanied by a high open-circuit voltage of 0.89 V and a strikingly decreased energy loss of 0.36 e V. When combined with the semi-transparent wide-bandgap Per SC, the four-terminal all-perovskite tandem solar cells achieved an outstanding PCE of 26.4%.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Unveiling the structure-property relationship in metastable Heusler compounds by systematic disorder tuning

引用

Physical Review B 2023年第1期107卷 014108-014108页

作者： F. Garmroudi M. Parzer M. Knopf A. Riss H. Michor A. V. Ruban T. Mori E. Bauer Institute of Solid State Physics Technische Universität Wien A-1040 Vienna Austria Department of Materials Science and Engineering KTH Royal Institute of Technology SE-100 44 Stockholm Sweden Materials Center Leoben Forschung GmbH A-8700 Leoben Austria International Center for Materials Nanoarchitectonics (WPI-MANA) National Institute for Materials Science Tsukuba 305-0044 Japan University of Tsukuba Tsukuba 305-8577 Japan

Heusler compounds represent a unique class of materials that exhibit a wide range of fascinating and tuneable properties such as exotic magnetic phases, superconductivity, band topology, or thermoelectricity. An exceptional, but for Heusler compounds common, feature is that they are prone to antisite defects and disorder. In this regard, the Fe2VAl Heusler compound has been a particularly interesting and disputed candidate. Even though various theoretical scenarios for the interplay of physical properties and disorder have been proposed, the metastable disordered A2 phase hitherto precluded experimental investigation in bulk samples. Here, we report experimental results on disorder-tuned Fe2VAl0.9Si0.1 alloys all the way toward the A2 phase, which we realized via rapidly quenching our samples from high temperatures. We measured the thermoelectric properties of these materials in a wide temperature range (4 to 700 K); they suggest a gradual semimetal/narrow-gap semiconductor → metal transition upon increasing the disorder. We also find a large anomalous Hall effect in the disordered A2 phase, arising from the side-jump scattering of charge carriers at the antisite magnetic moments. This is corroborated by measurements of the temperature- and field-dependent magnetization, which increases dramatically up to ≈2.5μB/f.u. as compared to the ordered compound (<0.1μB/f.u.). This study provides an experimental realization of the metastable A2 structure in bulk Fe2VAl-based alloys and grants insight into the structure-property relationship of these materials. Our work confirms that temperature-induced antisite disorder, occurring during thermal heat treatment, can be a precisely tuneable parameter in the family of Heusler compounds.

关键词： Crystal phenomena Defects Electrical properties Electronic structure Entropy Hall effect Magnetism Magnetotransport Phase transitions Phase transitions by order Structural properties Temperature Thermoelectric effects Transport phenomena

来源：评论

学校读者我要写书评

暂无评论

Evolution of Magnetism in Magnetic Topological Semimetal NdSbxTe2-x+δ

arXiv

引用

arXiv 2024年

作者： Chhetri, Santosh Karki Basnet, Rabindra Wang, Jian Pandey, Krishna Acharya, Gokul Nabi, Md Rafique Un Upreti, Dinesh Sakon, Josh Mortazavi, Mansour Hu, Jin Department of Physics University of Arkansas FayettevilleAR72701 United States Department of Chemistry & Physics University of Arkansas at Pine Bluff Pine BluffAR71603 United States Materials Science and Engineering Program Institute for Nanoscience and Engineering University of Arkansas FayettevilleAR72701 United States Department of Chemistry and Biochemistry Wichita State University WichitaKS67260 United States Department of Chemistry & Biochemistry University of Arkansas FayettevilleAR72701 United States

Magnetic topological semimetals LnSbTe (Ln = Lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Recently, varying Sb-Te composition has been found to effectively control the electronic and magnetic states in LnSbxTe2-x. With this motivation, we report the evolution of magnetic properties with Sb-Te substitution in NdSbxTe2-x+δ, (0 ≤ x ≤ 1). Our work reveals the interesting non-monotonic change in magnetic ordering temperature with varying composition stoichiometry. In addition, reducing the Sb content x drives the reorientation of moments from in-plane (ab-plane) to out-of-plane (c-axis) direction that results in the distinct magnetic structures for two end compounds NdTe2 (x = 0) and NdSbTe (x = 1). Furthermore, the moment orientation in NdSbxTe2-x+δ is also found to be strongly tunable upon application of weak magnetic field, leading to rich magnetic phases depending on the composition stoichiometry, temperature, and magnetic field. Such strong tuning of magnetism in this material establishes it as a promising platform for investigating tunable topological states and correlated topological physics. © 2024, CC BY-NC-SA.

关键词： Tellurium compounds

来源：评论

学校读者我要写书评

暂无评论

Metal Halide Perovskite for next-generation optoelectronics:progresses and prospects

引用

eLight 2023年第1期3卷 252-267页

作者： He Dong Chenxin Ran Weiyin Gao Mingjie Li Yingdong Xia Wei Huang Frontiers Science Center for Flexible Electronics Xi’an Institute of Flexible Electronics(IFE)and Xi’an Institute of Biomedical Materials&EngineeringNorthwestern Polytechnical UniversityXi’an 710072China Key Laboratory of Flexible Electronics(KLOFE)&Institution of Advanced Materials(IAM) Nanjing Tech University(NanjingTech)Nanjing 211816JiangsuChina Key Laboratory for Organic Electronics&Information Displays(KLOEID) and Institute of Advanced Materials(IAM)Nanjing University of Posts and TelecommunicationsNanjing 210023JiangsuChina Department of Applied Physics The Hong Kong Polytechnic UniversityKowloon 999077Hong KongChina Shenzhen Research Institute The Hong Kong Polytechnic UniversityShenzhen 518057GuangdongChina

Metal halide perovskites(MHPs),emerging as innovative and promising semiconductor materials with prominent optoelectronic properties,has been pioneering a new era of light management(ranging from emission,absorption,modulation,to transmission)for next-generation optoelectronic ***,the exploration of fundamental characteristics of MHPs and their devices is the main research theme during the past decade,while in the next decade,it will be primarily critical to promote their implantation in the next-generation *** this review,we first retrospect the historical research milestones of MHPs and their optoelectronic ***,we introduce the origin of the unique optoelectronic features of MHPs,based on which we highlight the tunability of these features via regulating the phase,dimensionality,composition,and geometry of ***,we show that owing to the convenient property control of MHPs,various optoelectronic devices with target performance can be *** last,we emphasize on the revolutionary applications of MHPs-based devices on the existing optoelectronic *** review demonstrates the key role of MHPs played in the development of modern optoelectronics,which is expected to inspire the novel research directions of MHPs and promote the widespread applications of MHPs in the next-generation optoelectronics.

关键词： Metal halide perovskites Optoelectronic characteristics Optoelectronic devices Revolutionary applications

来源：评论

学校读者我要写书评

暂无评论

Antioxidative solution processing yields exceptional Sn(Ⅱ) stability for sub-1.4 eV bandgap inorganic perovskite solar cells

引用

Journal of Energy Chemistry 2022年第9期31卷 487-494,I0014页

作者： Mingyu Hu Gaopeng Wang Qinghong Zhang Jue Gong Zhou Xing Jinqiang Gao Jian Wang Peng Zeng Shizhao Zheng Mingzhen Liu Yuanyuan Zhou Shihe Yang Guangdong Provincial Key Lab of Nano-Micro Materials Research School of Chemical Biology and BiotechnologyShenzhen Graduate SchoolPeking UniversityShenzhen 518055GuangdongChina School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731SichuanChina Department of Physics Hong Kong Baptist UniversityKowloonHong Kong 999077China Smart Society Lab Hong Kong Baptist UniversityKowloonHong Kong 999077China Institute of Biomedical Engineering Shenzhen Bay LaboratoryShenzhen 518055GuangdongChina

Owing to the combined features of sub-1.4 eV bandgap and all-inorganic composition,cesium tin–lead(Sn-Pb)triiodide perovskite is promising for approaching the Shockley-Queisser limit of solar cells while avoiding the use of volatile organic *** the low Sn(Ⅱ)stability in this perovskite remains a hurdle for delivering its theoretically attainable device *** we present a synthesis method of this perovskite based on an acetylhydrazine-incorporated antioxidative solution *** investigation shows that acetylhydrazine effectively reduces the oxidation of solution-phase Sn(Ⅱ)and meanwhile creates an electron-rich,protective nano-environment for solid-state Sn(Ⅱ)*** lead to high oxidation resistance of the final film as well as effective defect *** resultant solar cells demonstrate power conversion efficiencies up to 15.04%,the highest reported so far for inorganic perovskite devices with sub-1.4 eV ***,the T_(90) lifetime of these devices can exceed 1000 hours upon light soaking in a nitrogen atmosphere,demonstrating the potential advantage when lower-bandgap perovskite solar cells go all-inorganic.

关键词： Inorganic perovskites Ideal-bandgap Perovskite solar cells Tin defects Efficiency

来源：评论

学校读者我要写书评

暂无评论

Electric field dependent thermal conductivity of relaxor ferroelectric PMN-33PT through changes in the phonon spectrum

arXiv

引用

arXiv 2024年

作者： Rashadfar, Delaram Wooten, Brandi L. Heremans, Joseph P. Department of Mechanical and Aerospace Engineering Ohio State University ColumbusOH43210 United States Department of Materials Science and Engineering Ohio State University ColumbusOH43210 United States Department of Physics Ohio State University ColumbusOH43210 United States

In ferroelectric materials, an electric field has been shown to change the phonon dispersion sufficiently to alter the lattice thermal conductivity, opening the possibility that a heat gradient could drive a polarization flux, and technologically, also opening a pathway towards voltage-driven, all solid-state heat switching. In this report, we confirm the validity of the theory originally developed for Pb(Zr,Ti)O3 (PZT) on the ferroelectric relaxor 0.67Pb[Mg1/3Nb2/3]O3-0.33PbTiO3 (PMN-33PT). In the theory, the change in sound velocity and thermal conductivity with electric field relates to the piezoelectric coefficients and the Grüneisen parameter. It predicts that in PMN-33PT the effect should be an order of magnitude larger, and of opposite sign as in PZT;this is confirmed here experimentally. The effects are measured on samples never poled before and on samples that underwent multiple field sweep cycles and passed through two phase transitions with change in temperature. The thermal conductivity changes are linked to variations in the piezoelectric coefficients and can be as large as 8-11% at T ≥ 300 K. To date, this is the only means of heat conduction modulation that utilizes changes in the phonon spectrum. While this technology is in its infancy, it offers another path to future active thermal conduction control. Copyright © 2024, The Authors. All rights reserved.

关键词： Piezoelectricity

来源：评论

学校读者我要写书评

暂无评论

Threshold voltage modulation in monolayer MoS_(2) field-effect transistors via selective gallium ion beam irradiation

引用

science China materials 2022年第3期65卷 741-747页

作者： Baoshan Tang Yunshan Zhao Changjie Zhou Mingkun Zhang Huili Zhu Yida Li Jin Feng Leong Hao Shuai Hao Gong Weifeng Yang Department of Microelectronics and Integrated Circuit School of Electronic Science and EngineeringXiamen UniversityXiamen 361005China Department of Electrical and Computer Engineering National University of SingaporeSingapore 117576Singapore NNU-SULI Thermal Energy Research Center(NSTER)&Center for Quantum Transport and Thermal Energy Science(CQTES) School of Physics and TechnologyNanjing Normal UniversityNanjing 210023China Department of Physics School of ScienceJimei UniversityXiamen 361021China Engineering Research Center of Integrated Circuits for Next-Generation Communications Ministry of EducationSouthern University of Science and TechnologyShenzhen 518055China Department of Materials Science and Engineering National University of SingaporeSingapore 117575Singapore

Electronic regulation of two-dimensional(2 D)transition metal dichalcogenides(TMDCs)is a crucial step towards next-generation optoelectronics and ***,we demonstrate controllable and selective-area defect engineering in 2D molybdenum disulfide(MoS_(2))using a focused ion beam with a low-energy gallium ion(Ga^(+))*** find that the surface defects of MoS_(2)can be tuned by the precise control of ion energy and ***,the fieldeffect transistors based on the monolayer MoS_(2)show a significant threshold voltage modulation over 70 V after Ga+***-principles calculations reveal that the Ga impurities in the monolayer MoS_(2)introduce a defect state near the Fermi level,leading to a shallow acceptor level of 0.25 eV above the valence band *** defect engineering strategy enables direct writing of complex pattern at the atomic length scale in a controlled and facile manner,tailoring the electronic properties of 2D TMDCs for novel devices.

关键词： two-dimensional transition metal dichalcogenides field-effect transistors defect engineering Ga ion irradiation

来源：评论

学校读者我要写书评

暂无评论

Deformation Induced Microstructure of Stress Relieved Zircaloy-4 Cladding

SSRN

引用

SSRN 2024年

作者： Nelson, Malachi Samuha, Shmuel Sheyfer, Dina Kamerman, David Yang, David Song, Kay Hofmann, Felix Tischler, Jon Hosemann, Peter University of California Berkeley Department of Nuclear Engineering BerkeleyCA United States Idaho National Laboratory – Fuel Development Performance and Qualification Idaho FallsID United States NRCN Department of Materials Engineering Beer-Sheva Israel Argonne National Laboratory X-ray Science Division LemontIL United States University of Oxford Department of Engineering Science Oxford United Kingdom Brookhaven National Laboratory Condensed Matter Physics and Materials Science Department UptonNY United States

This work evaluates the microstructural evolution of cold-worked, stress-relieved Zircaloy-4 cladding from pristine to various deformed states. Differential aperture Laue diffraction and electron backscatter diffraction techniques are used to characterize intragranular strains, strain gradients, and grain fragmentation as metrics of deformation microstructure. The effects of mechanical anisotropy on deformation microstructure are investigated by comparing characterization results of samples subjected to different applied loads, including biaxial internal pressure and uniaxial tension along the rolled direction at 400 oC. Quantitative comparisons are made between the pristine microstructure and deformation-induced microstructure under both loading modes. Viscoplastic self-consistent simulations are performed to further investigate the microstructural evolution. Results indicate that biaxial loading from internal pressurization increases the deformation microstructure more than uniaxial loading along the rolled direction due to the relationship between loading and texture symmetry. Additionally, characterization results and simulations show distinct deformation-induced micro-textures: axial loading promotes a prismatic {10.0} fiber texture in the rolled direction, which strengthens the micro-texture inherited from pilgering, whereas pressure loading results in a {2-1.0} texture fiber, weakening the original micro-texture inherited from pilgering. © 2024, The Authors. All rights reserved.

关键词： Zircaloy

来源：评论

学校读者我要写书评

暂无评论

Charge pumping in hBN-encapsulated graphene driven by surface acoustic waves

arXiv

引用

arXiv 2024年

作者： Nichols, Dublin M. Berg, Jameson G. Taniguchi, Takashi Watanabe, Kenji Dhagat, Pallavi Deshpande, Vikram V. Jander, Albrecht Minot, Ethan Davis Department of Physics Oregon State University CorvallisOR97331 United States Department of Physics and Astronomy University of Utah Salt Lake CityUT84112 United States Research Center for Materials Nanoarchitectonics National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan Research Center for Electronic and Optical Materials National Institute for Materials Science 1-1 Namiki Tsukuba305-0044 Japan School of Electrical Engineering and Computer Science Oregon State University CorvallisOR97331 United States

Surface acoustic waves (SAWs) on piezoelectric insulators can generate dynamic periodic potentials inside one-dimensional and two-dimensional materials. These periodic potentials have been utilized or proposed for various applications, including acoustoelectric charge pumping. In this study, we investigate acoustoelectric charge pumping in graphene with very low electrostatic disorder. By employing a graphite top gate on boron-nitride-encapsulated graphene, we adjust the graphene carrier concentration over a broad range, enabling us to examine the acoustoelectric signal in both mixed-carrier and single-carrier regimes. We discuss the benefits of hBN-encapsulated graphene for charge pumping applications and introduce a model that describes the acoustoelectric signal across all carrier concentrations, including at the charge neutrality point. This quantitative model will support future SAW-enabled explorations of phenomena in low-dimensional materials and guide the design of novel SAW sensors. © 2024, CC BY.

关键词： Graphene

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：